• Journal of the Korean Ceramic Society
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• v.53 no.1
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• pp.110-115
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• 2016

We prepared a working electrode (WE) coated with 0 ~ 50 nm-thick indium gallium zinc oxide(IGZO) by using RF sputtering to improve the energy conversion efficiency (ECE) of a dye sensitized solar cell (DSSC). Transmission electron microscope (TEM) and energy dispersive spectroscopy (EDS) were used to analyze the microstructure and composition of the IGZO layer. UV-VIS-NIR spectroscopy was used to determine the transparency of the WE with IGZO layers. A solar simulator and a potentiostat were used to confirm the photovoltaic properties of the DSSC with IGZO layer. From the results of the microstructural analysis, we were able to confirm the successful deposition of an amorphous IGZO layer with the expected thickness and composition. From the UV-VIS-NIR analysis, we were able to verify that the transparency decreased when the thickness of IGZO increased, while the transparency was over 90% for all thicknesses. The photovoltaic results show that the ECE became 4.30% with the IGZO layer compared to 3.93% without the IGZO layer. As the results show that electron mobility increased when an IGZO layer was coated on the $TiO_2$ layer, it is confirmed that the ECE of a DSSC can be enhanced by employing an appropriate thickness of IGZO on the $TiO_2$ layer.

• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.253-257
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• 2016

We added 0 ~ 5 wt% $YBO_3:Eu^{3+}$ nano powders in a scattering layer of a working electrode to improve the energy conversion efficiency (ECE) of a dye sensitized solar cell (DSSC). FESEM and XRD were used to characterize the microstructure and phase. PL and micro Raman were used to determine the fluorescence and the composition of $YBO_3:Eu^{3+}$ phosphor. A solar simulator and a potentiostat were used to confirm the photovoltaic properties of the DSSC with $YBO_3:Eu^{3+}$. From the results of the microstructure and phase of the fabricated $YBO_3:Eu^{3+}$ nano powders, we identified $YBO_3:Eu^{3+}$ having particle size less than 100 nm. Based on the microstructure and micro Raman results, we confirmed the existence of $YBO_3:Eu^{3+}$ in the scattering layer and found that it was dispersed uniformly. Through photovoltaic properties results, the maximum ECE was shown to be 5.20%, which can be compared to the value of 5.00% without $YBO_3:Eu^{3+}$. As these results are derived from conversion of light in the UV range into visible light by employing $YBO_3:Eu^{3+}$ in the scattering layer, these indicate that the ECE of a DSSC can be enhanced by employing an appropriate amount of $YBO_3:Eu^{3+}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.305-305
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• 2013

태양전지는 무기태양전지와 유기태양전지 등이 연구 되고 있는데 [1] 그 중 유기물질의 장점(높은 수율, solution phase processing, 저비용으로 전력 생산)과 무기재료의 장점(높은 전자 이동도, 넓은 흡수 범위, 우수한 환경 및 열 안정성)을 융합함으로써 장기적 구조안정성의 확보와 광전변환의 고 효율화를 동시에 달성하기 위한 유기무기 하이브리드 태양전지가 최근 큰 관심을 끌고 있다[2]. 본 연구에서는 hybrid photovoltaics에 유기물 MDMO-PPV와 전도성 고분자 PEDOT:PSS를 무기물 GaN 위에 spin coating 하여 두께에 다른 효율을 측정하였다. 유기물 MDMO-PPV는 p-형으로 클로로벤젠, 톨루엔과 같은 유기 용매에 잘 녹으며 HOMO 5.33eV, LUMO 2.97eV, energy band gap 2.4eV이며 99.5%의 순도 물질을 사용하였다. 또한 정공 수송층(hole transport layer, HTL)으로 PEDOT:PSS를 사용하였으며, HOMO 5.0eV, LUMO 3.6eV, energy band gap 1.4eV를 가지며 증류수나 에탄올과 같은 수용성 용매에 잘 녹는 특성을 가지고 있다. 무기물은 III-V 족 물질 n-GaN(002)을 사용하였고 valence band energy 1.9eV, conduction band energy 6.3eV, energy band gap 3.4eV, 높은 전자 이동도와 높은 포화 속도, 광전자 소자에 유리한 광 전기적 특성을 가지고 있다. 기판으로는 GaN와 격자 부정합도와 열팽창계수 부정합도가 큰 Sapphire (Al2O3) 이종 기판을 사용하였다. 전극으로 Au를 사용하였으며 E-beam증착하였다. Reflector로서 Al를 thermal evaporator로 증착하였다 [3]. 실험 과정은 두께에 따른 효율을 알아보기 위해 MDMO-PPV를 900~1,500 rpm으로 spin coating 하였고, 열처리에 따른 효율을 알아보기 위해 열처리 온도 조건을 $110{\sim}170^{\circ}C$의 변화를 주었다. FE-SEM으로 표면과 단면을 관찰하였으며 J-V 특성을 알아보기 위해 각 샘플마다 solar simulator를 사용하여 측정하였고 그 결과를 논의하였다.

• Proceedings of the KAIS Fall Conference
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• 2012.05b
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• pp.512-516
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• 2012

Recently the Korean government's green energy growth policy has been taken at the national level due to the sufficient supply of renewable energy. Some specific technique should be taken in consideration for the operation of the grid voltage and power quality management. In this case, there may have some chance of operational problems. Typical problems arise when grid-connected solar power produced by Pacific sunshine. The power flow in the reverse direction can create overvoltage on the distribution line and gives value of malfunction on the system. Line voltage and overvoltage adjustment practice can stop these symptoms occurred. Under these circumstances, this paper presents an interconnection test devices for photovoltaic(PV) systems composed of distribution system simulator, PV system simulator and control and monitoring systems using the LabVIEW S/W, and simulates the customer voltage characteristics considering the 3 parameters on the introduction capacity for PV systems, system configuration and Power factor. This paper also proposes a new calculation algorithm for voltage profile to make comparison between calculation values and test device values. The results show that the simulation results for the normal operation characteristics of PV systems which are very practical and effective.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.11
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• pp.4529-4536
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• 2010

This paper develops an interconnection test devices for photovoltaic(PV) systems composed of distribution system simulator, PV systems simulator and control and monitoring systems using the LabVIEW S/W, and simulates the customer voltage characteristics considering the 3 parameters on the introduction capacity for PV systems, system configuration and load factor. This paper also proposes a new calculation algorithm for voltage profile to make a comparison between calculation values and test device values. The results show that the test results for the normal operation characteristics of PV systems is very practical and effective.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.505-512
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• 2014

A new donor-accepter-donor-accepter-donor (D-A-D-A-D) type 2,1,3-benzothiadiazole-thiophene-based acceptor unit 2,5-di(4-(5-bromo-4-octylthiophen-2-yl)-2,1,3-benzothiadiazol-7-yl)thiophene ($DTBTTBr_2$) was synthesized. Copolymerized with fluorene and indeno[1,2-b]fluorene electron-rich moieties, two alternating narrow band gap (NBG) copolymers PF-DTBTT and PIF-DTBTT were prepared. And two copolymers exhibit broad and strong absorption in the range of 300-700 nm with optical band gap of about 1.75 eV. The highest occupied molecular orbital (HOMO) energy levels vary between -5.43 and -5.52 eV and the lowest unoccupied molecular orbital (LUMO) energy levels range from -3.64 to -3.77 eV. Potential applications of the copolymers as electron donor material and $PC_{71}BM$ ([6,6]-phenyl-$C_{71}$ butyric acid methyl ester) as electron acceptors were investigated for photovoltaic solar cells (PSCs). Photovoltaic performances based on the blend of PF-DTBTT/$PC_{71}BM$ (w:w; 1:2) and PIF-DTBTT/$PC_{71}BM$ (w:w; 1:2) with devices configuration as ITO/PEDOT: PSS/blend/Ca/Al, show an incident photon-to-current conversion efficiency (IPCE) of 2.34% and 2.56% with the open circuit voltage ($V_{oc}$) of 0.87 V and 0.90 V, short circuit current density ($J_{sc}$) of $6.02mA/cm^2$ and $6.12mA/cm^2$ under an AM1.5 simulator ($100mA/cm^2$). The photocurrent responses exhibit the onset wavelength extending up to 720 nm. These results indicate that the resulted narrow band gap copolymers are viable electron donor materials for polymer solar cells.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.143-144
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• 2011

Due to enhanced demands on quality, security and reliability of the electric power energy system, a microgrid has become a subject of special interest. In this paper, output characteristics of energy storage system (ESS) with an electric double layer capacitor (EDLC) and battery energy storage system (BESS) of a renewable energy based microgrid were analyzed under grid-connected and islanded operation modes. The microgrid which consists of photovoltaic and wind power turbine generators, diesel generator, ESS with an EDLC, BESS and loads was modeled using real time digital simulator. The results present the effective control patterns of the microgrid system.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1094_1095
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• 2009

최근 분산전원 시스템들이 가정이나 공공기관 등에 많이 설치되면서 계통에 많은 문제점을 일으키고 있다. 이러한 문제점을 연구하기 위해서는 계통 등의 실제 시스템을 설치하여 실험을 하여야 하는데 학교 연구실 입장에서는 실제 시스템을 설치하여 실험하는데 한계가 있다. 그러나 실시간 전력 계통 모의장치 (Real Time Digital Simulator)를 이용하여 실시간으로 시스템을 시뮬레이션 할 경우 다양한 알고리즘의 적용이 가능하고, 고장, 전력계통 과도현상 등 계통에 일어날 수 있는 여러 가지 상황을 손쉽게 고려해 보는 것이 가능하다. 본 논문에서는 RTDS 내 계통 연계형 태양광 발전시스템을 실제 시스템과 유사하게 모델링하고, 실제 DSP (Digital Signal Processor) 를 이용하여 시스템을 실시간으로 운전하는 HILS (Hardware In the Loop System) 시스템을 구성하였다.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.930-937
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• 1997

Polycrystalline CdTe thin films have been studied for photovoltaic application because of their high absorption coefficient and optimal band energy(1.45 eV) for solar energy conversion. In this study CdTe thin films were deposited on CdS(chemical bath deposition)/ITO(indium tin oxide) substrate by rf-magnetron sputtering under various conditions. Structural optical and electrical properties are investigated with XRD UV-Visible spectrophotometer SEM and solar simulator respectively. The fabricated CdTe/CdS solar cell exhibited open circuit voltage( $V_{oc}$ ) of 610 mV short circuit current density( $J_{sc}$ ) of 17.2 mA/c $m^2$and conversion efficiency of about 5% at optimal sputtering conditions.