• Current Photovoltaic Research
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• v.5 no.4
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• pp.145-149
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• 2017

Transition metal dichalcogenides (TMDs) have attracted much attention because of their excellent optical and electrical properties, which are the applications of next generation photoelectric devices. In this study, $MoS_2$, which is a representative material of TMDs, was formed by magnetic sputtering method and surface changes and optical characteristics were changed with thickness variation. In addition, by implementing the photodetector of $MoS_2/p-Si$ structure, it was confirmed that the change of the electrical properties rather than the change of the optical properties according to the thickness change of $MoS_2$ affects the photoresponse ratio of the photodetector. This result can be used to fabricate effective photoelectric devices using $MoS_2$.

• Polymer(Korea)
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• v.34 no.1
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• pp.84-87
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• 2010

Copper-indium-diselenide (CIS) particles were prepared by the electrochemical reduction from the mixture solution of corresponding ion compounds. The prepared CIS was used as an insertion layer or a blending component in the organic photovoltaic bulk heterojunction cells composed of poly(3-octylthiophene) and fullerene. The increase of CIS content resulted in the rapid decrease of the open-circuit voltage as well as short-circuit current. The photovoltaic parameters were analyzed in relation to the structures, composition, and morphology of the photovoltaic blends.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.123-126
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• 2003

Recently, there is a growing concern on the photovoltaic effects using organic materials. This is a phenomena which converts the solar energy into the electrical one. We have fabricated a device structure of $ITO/PEDOT:PSS/CuPc/C_{60}/BCP/AI$. The PEDOT:PSS layer is made by spin coating, and the other organic layers are made by thermal vapor deposition. By measuring the current-voltage characteristics with an illumination of light, we have obtained value of Voc=0.38V, Jsc=$0.5mA/cm^{2}$. And a fill factor and efficiency are about 0.314 and 0.083%, respectively. A 500W xenon lamp(ORIEL) is used for a light source, and the light intensity illuminated into the device was about 10mW.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.313-313
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• 2010

The performance of polymer photovoltaic cells based on blends of poly(3-hexylyhiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) is strongly influenced by blend composition and thickness. Polymer photovoltaic cells based on bulk-heterojunction have been fabricated with a structure of ITO/poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)-pentacene/poly (3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM)/Al. We have prepared PEDOT:PSS by dissolving pentacene in N-methylpyrrolidine (NMP) and mixing with PEDOT:PSS. Pentacene was added a maximum concentration of approximately 5.5mg to the PEDOT:PSS solution and sonicated for 10 min. Active layer (P3HT:PCBM) (1:1) was strongly influenced by PEDOT:PSS-pentacene. We have investigated the performance of photovoltaic device with different concentration of P3HT:PCBM (1:1) 2.0wt%, 2.2wt%, 2.4wt% and 2.6wt%, respectively. The photocurrent and power conversion efficiency (PCE) showed a maximum between 2.0wt% and 2.2wt% concentration of P3HT:PCBM. This implied that both morphology and electron transport properties of the layer influenced the performance of the present photovoltaic cells. As the concentration of P3HT:PCBM blends as an active layer was increased, the power conversion efficiency was decreased. P3HT:PCBM layer and PEDOT:PSS-pentacene layer were characterized by work function, UV-visible absorption, atomic force microscopy (AFM), X-ray diffraction (XRD) and scanning electron microscope (SEM).

• Current Photovoltaic Research
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• v.5 no.3
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• pp.95-99
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• 2017

The interconnecting shingled solar cells method shows extremely high ratio active area per total area and has the excellent potential for high power PV (photovoltaic). Compared to the conventional module, it can have much more active area due to busbar-free structure. The properties of ECA (electrically conductive adhesives) are significant to fabricate the shingled array PV since it should be used in terms of electric and structural connection. Various ECA were tried and characterized to optimize the soldiering conditions. The open circuit voltage of shingled array cells showed a three-fold increase and efficiency was also increased by 1.63%. The shingled array cells used in CE3103WLV showed the highest power and in CA3556HF the lowest curing temperature and very fast curing time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.505-506
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• 2007

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$C_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc/$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL 14004).

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.573-579
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• 2011

Highly textured Ag, Al and Al:Si back reflectors for flexible n-i-p silicon thin-film solar cells were prepared on 100-${\mu}m$-thick stainless steel substrates by DC magnetron sputtering and the influence of their surface textures on the light-scattering properties were investigated. The surface texture of the metal back reflectors was influenced by the increased grain size and by the bimodal distribution that arose due to the abnormal grain growth at elevated deposition temperatures. This can be explained by the structure zone model (SZM). With an increase in the deposition temperatures from room temperature to $500^{\circ}C$, the surface roughness of the Al:Si films increased from 11 nm to 95 nm, whereas that of the pure Ag films increased from 6 nm to 47 nm at the same deposition temperature. Although Al:Si back reflectors with larger surface feature dimensions than pure Ag can be fabricated at lower deposition temperatures due to the lower melting point and the Si impurity drag effect, they show poor total and diffuse reflectance, resulting from the low reflectivity and reflection loss on the textured surface. For a further improvement of the light-trapping efficiency in solar cells, a new type of back reflector consisting of Ag/Al:Si bilayer is suggested. The surface morphology and reflectance of this reflector are closely dependent on the Al:Si bottom layer and the Ag top layer. The relationship between the surface topography and the light-scattering properties of the bilayer back reflectors is also reported in this paper.

• JOURNAL OF ELECTRICAL WORLD
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• no.4 s.148
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• pp.22-29
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• 1989

• Proceedings of the Korean Society of Potoscience Conference
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• spring
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• pp.24-24
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.122-122
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• 1997