• Title/Summary/Keyword: Photovoltaic properties

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Photovoltaic Effects in Organic Semiconductor $CuPc/C_{60}$ depending on Cathodes ($CuPc/C_{60}$ 구조 유기 반도체에서의 음전극의 종류에 따른 광기전 효과 연구)

  • Oh, Hyun-Seok;Jang, Kyung-Wook;Lee, Sung-Ill;Lee, Joon-Ung;Kim, Tae-Wan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.181-184
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    • 2004
  • Organic semiconductors have attracted considerable attention due to their interesting physical properties followed by various technological applications in the area of electronics and opto-electronics. It has been a long time since organic solar cells were expected as a low-cost high-energy conversion device. Although practical use of them has not been achieved, technological progress continues. Morphology of the materials, organic/inorganic interface, metal cathodes, molecular packing and structural properties of the donor and acceptor layers are essential for photovoltaic response. We have fabricated solar-cell devices based on copper-phthalocyanine(CuPc) as a donor(D) and fullerene($C_{60}$) as an electron acceptor(A) with doped charge transport layers, and BCP as an exciton blocking layer(EBL). We have measured photovoltaic characteristics of the solar-cell devices using the xenon lamp as a light source.

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The Effect of Electrical Properties with Degradation of EVA sheet and Electrode in Photovoltaic Module (태양전지모듈의 EVA sheet 열화와 전극부식이 전기적 특성에 미치는 영향)

  • Kang, Gi-Hwan;Park, Chi-Hong;Yu, Gwon-Jong;Ahn, Hyung-Keun;Han, Deuk-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.26-28
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    • 2005
  • In this paper, degradation in field-aged PV modules including degradation of interconnect, discoloration of encapsulant and hot spot have been observed and analyzed. From the results, photovoltaic module installed for 15 years shows around 13~20% drop of electrical properties due to the interconnect degradation and PV module passed 19 years has been found to drop of around 20% mainly by the encapsulant discoloration. Fill factor of the electrode oxidized photovoltaic module has been dropped by the amount of 6~10% due to the change of irradiance. It is because maximum voltage(Vmp) decreases according to the increase of irradiance.

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Physical Properties of Matrix According to Replacement Ratio using Polysilicon Sludge Based on Light Burned Magnesia (경소마그네시아 기반 폴리실리콘슬러지 치환율에 따른 경화체의 물리적 특성)

  • Kim, Yong-Gu;Kim., Dae-Yeon;Shin, Jin-Hyun;Lee, Sang-Soo;Song, Ha-Young
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2019.11a
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    • pp.143-144
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    • 2019
  • Recently, environmental pollution related to global warming is on the rise. Meanwhile, renewable energy is a representative example of many efforts to develop eco-friendly energy to solve the depletion of natural resources and the depletion of petroleum resources in conjunction with global warming. Among them, photovoltaic power generation is increasing the subsidies for the government to increase the production of photovoltaic electricity of the general public, showing a high growth rate. However, polysilicon, which is a raw material of the photovoltaic panel, generates waste called polysilicon sludge in the manufacturing process. In order to produce 1 ton of polysilicon, about 2 tons of waste polysilicon sludge is generated. In 2012, polysilicon sludge was generated at 78,000 tons, with an average of about 220 tons per day. The sludge generated due to insufficient treatment of polysilicon sludge is currently solidified and is processed by landfilling. Therefore, in this study, polysilicone sludge is used as the concept of admixture, and the physical properties of the matrix according to the polysilicon sludge replacement ratio based on light burned magnesia is determined.

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Structure and magnetic properties of CrN thin films on La0.67Sr0.33MnO3

  • Zhang, Dingbo;Zhou, Zhongpo;Wang, Haiying;Wang, Tianxing;Lu, Zhansheng;Yang, Zongxian;Ai, Zhiwei;Wu, Hao;Liu, Chang
    • Current Applied Physics
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    • v.18 no.11
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    • pp.1320-1326
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    • 2018
  • High crystalline quality CrN thin films have been grown on $La_{0.67}Sr_{0.33}MnO_3$ (LSMO) templates by molecular beam epitaxy. The structure and magnetic properties of CrN/LSMO heterojunctions are investigated combining with the experiments and the first-principles simulation. The N?el temperature of the CrN/LSMO samples is found to be 281 K and the saturation magnetization of CrN/LSMO increases compared to that of LSMO templates. The magnetic property of CrN/LSMO heterostructures mainly comes from Cr atoms of (001) CrN and Mn atoms of (001) LSMO. The (001) LSMO induces and couples the spin of the CrN sublattice at CrN/LSMO interface.

Poly-Si Thin Film Solar Cells by Hot-wire CVD

  • Lee, J.C.;Chung, Y.S.;Kim, S.K.;Yoon, K.H.;Song, J.S.;Park, I.J.;Kwon, S.W.;Lim, K.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.1034-1037
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    • 2003
  • Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

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Low Temperature Deposition of $\mu$ c-Si:H Films by Hot Wire CVD (Hot Wire CVD법에 의한 미세결정 실리콘 박막의 저온 증착)

  • Lee, Jeong-Chul;Kan, Ki-Whan;Kim, Seok-Ki;Yoon, Kyung-Hoon;Song, Jin-Soo;Park, I-Jun
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1763-1765
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    • 2000
  • This paper presents deposition and characterizations of microcrystalline silicon ($\mu$ c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature at 300$^{\circ}C$. The flow rates of $SiH_4$ gas are critical parameter for the formation of Si films with microcrystalline phase. We could obtain $\mu$ c-Si:H with columnar grain structure and volume fraction of 75% without H2 dilution. The electronic properties, hydrogen bonding configurations, and $H_2$ concentration inside the films are also strongly affected by $SiH_4$ flow rate, which is provided in this paper.

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Characterization of ${\mu}c$-Si:H Thin-film Solar Cells by Hot-wire CVD

  • Lee, J.C.;Chung, Y.S.;Kim, S.K.;Youn, K.H.;Song, J.S.;Park, I.J.;Kwon, S.W.;Lim, K.S.
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1598-1600
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    • 2003
  • Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$ The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ (<$200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC vanes with $T_f$.

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Photovoltaic Properties of Organic Solar Cell using Zinc phthalocyanine(ZnPc)/$C_{60}$ devices (Zinc phthalocyanine(ZnPc)/$C_(60)$ 소자를 이용한 유기 광소자의 광기전특성)

  • Lee, Ho-Sik;Hur, Sung-Woo;Lee, Won-Jae;Shin, Hoon-Kyu;Kim, Tae-Wan;Kwon, Young-Soo
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1712-1714
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    • 2004
  • During the last 20 years organic semiconductors have attracted considerable attention due to their interesting physical properties followed by various technological applications in the area of electronics and opto-electronics. It has been a long time since organic solar cells were expected as a low-cost energy-conversion device. Although practical use of them has not been achieved, technological progress continues. Morphology of the materials, organic/inorganic interface, metal cathodes, molecular packing and structural properties of the donor and acceptor layers are essential for photovoltaic response. We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerine($C_{60}$) as electron acceptor(A) with doped charge transport layers, $Alq_3$ as an electron transport or injection layer. We observed the photovoltaic characteristics of the solar cell devices using the Xe lamp as a light source.

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Changes in Optical Properties of Crystalline-Si PV Modules after Natural Light Exposure (자연광 노출 후 결정질 실리콘 PV모듈의 광학적 특성 변화)

  • Kong, Ji-Hyun;Ji, Yang-Guen;Kang, Gi-Hwan;Yu, Gwon-Jong;Ahn, Hyung-Keun;Han, Deuk-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.64-64
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    • 2010
  • This paper presents the results of changes of optical properties of front materials in crystalline PV modules. If PV modules on the outdoor, transmittance of front materials is reduced by solar light. That is UV, IR included Solar spectrum will have change the properties of glass. Therefore decrease in transmittance leads to loss of the PV modules output. All the PV modules showed the loss in Isc by 1~5% within few hors. To investigate the changes we are analyzed using spectrophotometer from raw glass to laminated glass.

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The Doping Profile Modeling of Crystalline Silicon Solar Cell with PC1D simulation (PC1D 시뮬레이션을 이용한 결정질 실리콘 태양전지의 도핑 프로파일 모델링)

  • Choi, Sung-Jin;Yu, Gwon-Jong;Song, Hee-Eun
    • 한국태양에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.149-153
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    • 2011
  • The PC1D is widely used for modeling the properties of crystalline silicon solar cell. Optimized doping profile in crystalline silicon solar cell fabrication is necessary to obtain high conversion efficiency. Doping profile in the forms of a uniform, gaussian, exponential and erfc function can be simulated using the PC1D program. In this paper, the doping profiles including junction depth, dopant concentration on surface and the form of doping profile (gaussian, gaussian+erfc function) were changed to study its effect on electrical properties of solar cell. As decreasing junction depth and doping concentration on surface, electrical properties of solar cell were improved. The characteristics for the solar cells with doping profile using the combination of gaussian and erfc function showed better open-circuit voltage, short-circuit current and conversion efficiency.

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