• Journal of the Korean Solar Energy Society
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• v.30 no.6
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• pp.16-21
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• 2010

It is well-known that Boron-doped Cz Si solar cells suffer light-induced degradation due to boron-oxygen defect which is responsible of a reduction in lifetime and hence efficiency. In this paper, we assume that PV solar cell has been connected with variable load to account the real operating condition and it shows different light-induced degradation of Si solar cell. To evaluate the effect of light-induced degradation for solar cell with various load, Single crystalline solar cells are connected with open and short circuits during light exposure. Isc-Voc curve evaluate light induced degradation of solar cells and the reason is explained as a change for serial resistance. From the results, Electrical characteristics of solar cells show better performance under short circuit conditions, after light exposure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.102-107
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• 2003

This study puts focus on the optimization of growth temperature of CIGS absorber layer which affects severely the performance of solar cells. The CIGS absorber layers were prepared by three-stage co-evaporation of metal elements in the order of In-Ga-Se. The effect of the growth temperature of 1st stage was found not to be so important, and 350$^{\circ}C$ to be the lowest optimum temperature. In the case of growth temperature at 2nd/3rd stage, the optimum temperature was revealed to be 550$^{\circ}C$. The XRD results of CIGS films showed a strong (112) preferred orientation and the Raman spectra of CIGS films showed only the Al mode peak at 173cm$\^$-1/. Scanning electron microscopy results revealed very small grains at 2nd/3rd stage growth temperature of 480$^{\circ}C$. At higher temperatures, the grain size increased together with a reduction in the number of the voids. The optimization of experimental parameters above mentioned, through the repeated fabrication and characterization of unit layers and devices, led to the highest conversion efficiency of 15.4% from CIGS-based thin film solar cell with a structure of Al/ZnO/CdS/CIGS/Mo/glass.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.6
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• pp.523-535
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• 2012

Solar powered aircraft are becoming more and more interesting for future long endurance missions at hight altitudes, because they could provide surveillance, earth monitoring, telecommunications, etc. without any atmospheric pollution and hopefully in the near future with competitive costs compared with satellites. However, traditional aircraft sizing methods currently employed in the conceptual design phase are not immediately applicable to solar powered aircraft. Hence, energy balance and constraint analyses were performed to determine how various power system components effect the sizing of a solar powered long endurance aircraft. The primary power system components considered in this study were photovoltaic (PV) modules for power generation and regenerative fuel cells for energy storage. To verify current research results, these new sizing methods were applied to HALE aircraft and results were presented.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.210-211
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• 2007

Amid booming PV(photovoltaic) industry, BIPV(Building Integrated PV) is one of the best fascinating PV application technologies. To apply PV in building, variable factors should be reflected such as installation position, shading, temperature effect and so on. Especially a temperature should be considered, for it affects both electrical efficiency of PV module and heating and cooling load in building. Transparent PV modules were designed as finished material for spandrels are presented in this paper. The temperature variation of the modules with and without air gap and insulation were compared and analyzed. The results showed that the module with air gap and insulation has a much larger temperature variation than another transparent module. The temperature of the module reached by 55degree C under vertical irradiance of lower 500$W/m^2$. And the temperature difference between these modules was about 15degree C. To analyze the output performance of module according to temperature variation, separate module was manufactured and measured by sun-simulator. The results showed that 1 degree temperature rise reduced about 0.45% of output power.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.75.2-75.2
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• 2013

Atomic layer deposition (ALD), utilizing self-limiting surface reactions, could offer promising perspectives for future efficient energy conversion devices. The capabilities of ALD for surface/interface modification and construction of novel architectures with sub-nanometer precision and exceptional conformality over high aspect ratio make it more valuable than any other deposition methods in nanoscale science and technology. In the context, a variety of researches on fabrication of active materials for energy conversion applications by ALD are emerging. Among those materials, one-dimensional nanotubular titanium dioxide, providing not only high specific surface area but also efficient carrier transport pathway, is a class of the most intensively explored materials for energy conversion systems, such as photovoltaic cells and photo/electrochemical devices. The monodisperse, stoichiometric, anatase, TiO2 nanotubes with smooth surface morphology and controlled wall thickness were fabricated via low-temperature template-directed ALD followed by subsequent annealing. The ALD-grown, anatase, TiO2 nanotubes in alumina template show unusual crystal growth behavior which allows to form remarkably large grains along axial direction over certain wall thickness. We also fabricated dye-sensitized solar cells (DSCs) introducing our anatase TiO2 nanotubes as photoanodes, and studied the effect of blocking layer, TiO2 thin films formed by ALD, on overall device efficiency. The photon convertsion efficiency ~7% were measured for our TiO2 nanotubebased DSCs with blocking layers, which is ~1% higher than ones without blocking layer. We also performed open circuit voltage decay measurement to estimate recombination rate in our cells, which is 3 times longer than conventional nanoparticulate photoanodes. The high efficiency of our ALD-grown, anatase, TiO2 nanotube-based DSCs may be attributed to both enhanced charge transport property of our TiO2 nanotubes photoanode and the suppression of recombination at the interface between transparent conducting electrode and iodine electrolytes by blocking layer.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.179-182
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• 2006

The effect of electron beam irradiation on dye sensitized solar cell (DSSC) has been studied to examine degradation of DSSC. The high-energy electron beam irradiation affects on the materials and performance of dye sensitized solar cells. We have checked the effects of electron beam irradiation of $TiO_2$ substrate with and without dye adsorption on the photovoltaic performances of resulting DSSCS and also studied the structural and electrical properties of polymers after irradiation. All solar cells materials were irradiated by electron beams with an energy source of 2MeV at different dose rates of 60 kGy, 120 kGy 240 kGy and 900 kGy and then their photoelectrical parameters were measured at 1 sun $(100 mW/cm^2)$. It was shown that the efficiency of DSSC was decreased as increasing the dose of e-beam irradiation due to lowering in $TiO_2$ crystallinity, decomposition of dye and oxidation of FTO glasses. On the other hand, the performance of solid-state DSSC with polyethylene oxide based electrolyte was improved after irradiation of e-beam due to enhancement of its conductivity and breakage of crosslinking.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.11
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• pp.9-17
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• 2019

Interest in renewable energy is rapidly growing around the world. One of the most popular renewable energy sources is solar power, and photovoltaic (PV) systems are the most representative route for generating solar energy. However, with the growing adoption of solar power systems, the demand for land on which to install these systems has increased, which has caused environmental degradation. Recently, floating PV systems have been designed to utilize idle water surface areas of dams, rivers, and oceans. Because floating PV systems will be exposed to harsh environmental stresses, the safety of such systems should be secured before installation. In this study, the structural robustness of a floating PV system was analyzed by conducting numerical simulation to investigate whether the system can withstand harsh environmental stresses, such as wind and wave loads. Additionally, conventional wind and wave load predictions based on the design method and the simulation results were compared. The comparison revealed that the design method overestimated wind and wave loads. The total drag of the PV system was significantly overestimated by the conventional design criteria, which would increase the cost of the mooring system. The simulation offers additional advantages in terms of identifying the robustness of the floating PV system because it considers real-world environmental factors.

• Journal of the Architectural Institute of Korea Planning & Design
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• v.34 no.11
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• pp.13-22
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• 2018

At the time when zero energy building is expected to be generalized, this study examines whether the investment in the passive element or the active element is more effective in terms of energy in the construction process of zero energy building. In other words, the effect of energy demand by passive element and the change of energy generation by active element are examined in terms of the same investment cost. The purpose of this study is to examine the change of energy demand by passive element and the change of energy generation by active element in zero energy building and to make reasonable investment decision by comparing energy with cost aspect. For this purpose, we selected the buildings to be subjected to energy simulation and derive the required energy amount and energy generation amount by using meteorological data of four regions in Korea. The change of energy demand and energy generation according to the change of application condition was derived. In order to compare and analyze the changes in energy demand and generation at the same cost standard through price survey and quotation of window and photovoltaic power generation equipment.