• Current Photovoltaic Research
• /
• v.6 no.1
• /
• pp.17-20
• /
• 2018

The dependency of the photovoltaic performance of p-/n-type silicon solar-cells on the metallic contaminant type (Fe, Cu, and Ni) and concentration was investigated. The minority-carrier recombination lifetime was degraded with increasing metallic contaminant concentration, however, the degradation sensitivity of recombination lifetime was lower at n-type than p-type silicon wafer, which means n-type silicon wafer have an immunity to the effect of metallic contamination. This is because heavy metal ions with positive charge have a much larger capture cross section of electron than hole, so that reaction with electrons occurs much more easily. The power conversion efficiency of n-type solar-cells was degraded by 9.73% when metallic impurities were introduced in the silicon bulk, which is lower degradation compared to p-type solar-cells (15.61% of efficiency degradation). Therefore, n-type silicon solar-cells have a potential to achieve high efficiency of the solar-cell in the future with a merit of immunity against metal contamination.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.67-67
• /
• 2011

Compound semiconductor/CNTs composites have shown considerably improved efficiency improvement in photovoltaic devices, which is often attributed to two different factors. One is the formation of efficient electronic energy cascade structures. The other effect of CNTs on the performance of photovoltaic devices is the decrement of interfacial resistance. The interfacial resistances at n-type/ p-type materials and/or n-type materials/TCO electrode are reduced by an outstanding electrical property of CNTs. In addition to the effects of CNTs, we report the third reason for increment of efficiency in photovoltaic devices by CNT's well-known electrical field enhancement effects. The improved ${\beta}$ values in reverse-FE currents of CIGS electrode with SWNTs layers indicate the enhancement of electrical field in photovoltaic devices, which implies the acceleration of the electron transfer rate in the cell. Due to the formation of an efficient electronic energy cascade structure and the decrease of the interfacial resistance as well as the improvement of the electrical field in the photovoltaic devices, the power conversion efficiency of electrochemically deposited superstrate-type CIGS solar cells was increased 24.3% in the presence of SWNTs and showed 10.40% conversion efficiency.

• ETRI Journal
• /
• v.33 no.6
• /
• pp.880-886
• /
• 2011

With the introduction of high-current 8-inch solar cells, conventional Schottky bypass diodes, usually adopted in photovoltaic (PV) panels to prevent the hot spot phenomenon, are becoming ineffective as they cause relatively high voltage drops with associated undue power consumption. In this paper, we present the architecture of an active circuit that reduces the aforementioned power dissipation by profitably replacing the bypass diode through a power MOS switch with its embedded driving circuitry. Experimental prototypes were fabricated and tested, showing that the proposed solution allows a reduction of the power dissipation by more than 70% compared to conventional Schottky diodes. The whole circuit does not require a dedicated DC power and is fully compatible with standard CMOS technologies. This enables its integration, even directly on the panel, thereby opening new scenarios for next generation PV systems.

• 한국태양에너지학회:학술대회논문집
• /
• 2009.04a
• /
• pp.241-244
• /
• 2009

This study is focused on the improving effectiveness of a photovoltaic system. The characteristic of crystalline silicon solar cells, that 0.5% reduction in generating power is occurred by increasing temperature $1^{\circ}C$ of module. Typically, average solar generating power is higher spring and fall than summer. Degradation phenomena shall shorten the life of the module when the temperature of modules is $70^{\circ}C$. Decreasing temperature 40degree of the module and increasing the solar power 20% was presented using the water impinging jet method on the surface of photovoltaic cells. It is shown that Impinging jet have an effected on heat and deliver effective substance from the area in which the injection is effective.

• Current Photovoltaic Research
• /
• v.6 no.4
• /
• pp.109-118
• /
• 2018

Silicon (Si) solar cells are the most successful technology which are ruling the present photovoltaic (PV) market. In that essence, multijunction (MJ) solar cells provided a new path to improve the state-of-art efficiencies. There are so many hurdles to grow the MJ III-V materials on Si substrate as Si with other materials often demands similar qualities, so it is needed to realize the prospective of Si tandem solar cells. However, Si tandem solar cells with MJ III-V materials have shown the maximum efficiency of 30 %. This work reviews the development of the III-V/Si solar cells with the synopsis of various growth mechanisms i.e hetero-epitaxy, wafer bonding and mechanical stacking of III-V materials on Si substrate. Theoretical approaches to design efficient tandem cell with an analysis of state-of-art silicon solar cells, sensitivity, difficulties and their probable solutions are discussed in this work. An analytical model which yields the practical efficiency values to design the high efficiency III-V/Si solar cells is described briefly.

• Current Photovoltaic Research
• /
• v.7 no.3
• /
• pp.76-84
• /
• 2019

Silicon heterojunction solar cells (SHJ) have dominated the photovoltaic market up till now but their conversion performance is practically limited to around 26% compared with the theoretical efficiency limit of 29.4%. A silicon based multi-junction devices are expected to overcome this limitation. In this report, we briefly review the state-of-art characteristic of wide-gap materials which has played a role as top sub-cells in silicon based multi-junction solar cells. In addition, we indicate significantly practical challenges and key issues of these multi-junction combination. Finally, we focus to some characteristics of III-V/c-Si tandem configuration which are reaching highly record performance in multi-junction silicon solar cells.

• Current Photovoltaic Research
• /
• v.10 no.4
• /
• pp.107-110
• /
• 2022

Lightweight and flexible photovoltaic (PV) modules are attractive for building-integrated photovoltaic (BIPV) applications because of their easy construction and applicability. In this study, we fabricated lightweight and flexible c-Si PV modules using ethylene tetrafluoroethylene (ETFE) front cover and shingled design string cells. The ETFE front cover instead of glass made the PV modules lighter in weight, and the shingled design string cells increased the flexibility. Finally, we fabricated a PV module with a conversion power of 240.08 W at an area of 1.25 m² and weighed only 2 kg/m². Moreover, to check the PV module's flexibility, we conducted a bending test. The difference of conversion power between the modules before and after bending shown was only 1.7 W, which showed a power reduction rate of about 0.7%.

• Current Photovoltaic Research
• /
• v.2 no.3
• /
• pp.79-83
• /
• 2014

Dye-sensitized solar cells (DSSCs) are applied in the emerging fields of building integrated photovoltaic and electronics integrated photovoltaic like small portable power sources as demands are increased with characteristic advantages. Highly flexible dye-sensitized solar cells (DSSCs) prepared on single stainless steel mesh were proposed in this paper. Single mesh DSSCs structure utilizing the spraying the chopped glass paper on the surface treated stainless steel mesh for integrating the space element and the electrode components, counter electrode component and photoelectrode component were coated on each side of the single mesh. The fabricated single mesh DSSCs showed the energy-conversion efficiency 0.50% which show highly bendable ability. The new single mesh DSSCs may have potential applications as highly bendable solar cells to overcome the limitations of TCO-based DSSCs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.3
• /
• pp.252-256
• /
• 2013

We introduced sensitizing dyes into the bulk-heterojunction (BHJ) photovoltaic (PV) layer of polymer solar cells (PSCs). The sensitizing dyes doped were Bis(tetra butyl ammonium) cis-dithio cyanato bis(2,2'-bipyridine-4-carboxylicacid-4'-carboxylate) ruthenium (II) (N719 dye) and the BHJ PV layer used was made of poly (3-hexylthiophene) (P3HT) and phenyl $C_{61}$-butyric acid methyl ester (PCBM). It was found that the N719 dyes increase the photovoltaic performance, i.e., increasing open-circuit voltage and short-circuit current density with improved fill factor. For the P3HT:PCBM PV cells doped with the N719 dyes (0.24 wt%), an increase in power conversion efficiency of 4.0% was achieved, compared to that of the control cells (3.6%) without the N719 dyes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.5
• /
• pp.442-453
• /
• 2023

Tandem or multijunction solar cells (MJSCs) can convert sunlight into electricity with higher efficiency (η) than single junction solar cells (SJSCs) by dividing the solar irradiance over sub-cells having distinct bandgaps. The efficiencies of various common SJSC materials are close to the edge of their theoretical efficiency and hence there is a tremendous growing interest in utilizing the tandem/multijunction technique. Recently, III-V materials integration on a silicon substrate has been broadly investigated in the development of III-V on Si tandem solar cells. Numerous growth techniques such as heteroepitaxial growth, wafer bonding, and mechanical stacking are crucial for better understanding of high-quality III-V epitaxial layers on Si. As the choice of growth method and substrate selection can significantly impact the quality and performance of the resulting tandem cell and the terminal configuration exhibit a vital role in the overall proficiency. Parallel and Series-connected configurations have been studied, each with its advantage and disadvantages depending on the application and cell configuration. The optimization of both growth mechanisms and terminal configurations is necessary to further improve efficiency and lessen the cost of III-V on Si tandem solar cells. In this review article, we present an overview of the growth mechanisms and terminal configurations with the areas of research that are crucial for the commercialization of III-V on Si tandem solar cells.