• Korean Journal of Materials Research
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• v.28 no.4
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• pp.235-240
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• 2018

We propose a speedy two-step deposit process to form an Au electrode on hole transport layer(HTL) without any damage using a general thermal evaporator in a perovskite solar cell(PSC). An Au electrode with a thickness of 70 nm was prepared with one-step and two-step processes using a general thermal evaporator with a 30 cm source-substrate distance and $6.0{\times}10^{-6}$ torr vacuum. The one-step process deposits the Au film with the desirable thickness through a source power of 60 and 100 W at a time. The two-step process deposits a 7 nm-thick buffer layer with source power of 60, 70, and 80 W, and then deposits the remaining film thickness at higher source power of 80, 90, and 100 W. The photovoltaic properties and microstructure of these PSC devices with a glass/FTO/$TiO_2$/perovskite/HTL/Au electrode were measured by a solar simulator and field emission scanning electron microscope. The one-step process showed a low depo-temperature of $88.5^{\circ}C$ with a long deposition time of 90 minutes at 60 W. It showed a high depo-temperature of $135.4^{\circ}C$ with a short deposition time of 8 minutes at 100 W. All the samples showed an ECE lower than 2.8 % due to damage on the HTL. The two-step process offered an ECE higher than 6.25 % without HTL damage through a deposition temperature lower than $88^{\circ}C$ and a short deposition time within 20 minutes in general. Therefore, the proposed two-step process is favorable to produce an Au electrode layer for the PSC device with a general thermal evaporator.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.10
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• pp.1383-1389
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• 2013

There were telecommunication noise and malfunctions of the electronic devices occurred over a wide area due to the high harmonic voltage and/or current levels of the Back-to-back converter in the DFIG wind power system even though the magnitude of all harmonics is within the international standards. The triangular carrier signals of the PWM used in the power converter system is related to the telecommunication noise because they are in the range of audible frequencies and amplified by a variety of the standing waves that were excited by harmonic voltage sources in the weak grid system such as a long distance distribution transmission lines. This paper describes the characteristics of the harmonics in the wind turbine-generator, numerical analysis and simulation of the harmonics resonance phenomena in the distribution lines as well as measuring induced voltage of the telecommunication lines in parallel with power lines in order to verify the root cause of the telecommunication noise. These noise problems can occur in a wind turbine power system with a non-linear converter at any time, as well as photovoltaic power system. So, the preliminary review of suitable filter devices and switching frequencies of the PWM have to be required by considering the stability of the controller at the design stage but as part of the measures the effect of the telecommunication cable shields was analyzed by comparing the measured data between multi-conductor with/without shields so as to attenuate the sources of the harmonics voltage induced into the telecommunication lines and to apply the most cost-effective measures in the field.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.215-216
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• 2013

The silicide is a compound of Si with an electropositive component. Silicides are commonly used in silicon-based microelectronics to reduce resistivity of gate and local interconnect metallization. The popular silicide candidates, CoSi2 and TiSi2, have some limitations. TiSi2 showed line width dependent sheet resistance and has difficulty in transformation of the C49 phase to the low resistive C54. CoSi2 consumes more Si than TiSi2. Nickel silicide is a promising material to substitute for those silicide materials providing several advantages; low resistivity, lower Si consumption and lower formation temperature. Nickel silicide (NiSi) nanowire (NW) has features of a geometrically tiny size in terms of diameter and significantly long directional length, with an excellent electrical conductivity. According to these advantages, NiSi NWs have been applied to various nanoscale applications, such as interconnects [1,2], field emitters [3], and functional microscopy tips [4]. Beside its tiny geometric feature, NW can provide a large surface area at a fixed volume. This makes the material viable for photovoltaic architecture, allowing it to be used to enhance the light-active region [5]. Additionally, a recent report has suggested that an effective antireflection coating-layer can be made with by NiSi NW arrays [6]. A unique growth mechanism of nickel silicide (NiSi) nanowires (NWs) was thermodynamically investigated. The reaction between Ni and Si primarily determines NiSi phases according to the deposition condition. Optimum growth conditions were found at $375^{\circ}C$ leading long and high-density NiSi NWs. The ignition of NiSi NWs is determined by the grain size due to the nucleation limited silicide reaction. A successive Ni diffusion through a silicide layer was traced from a NW grown sample. Otherwise Ni-rich or Si-rich phase induces a film type growth. This work demonstrates specific existence of NiSi NW growth [7].

• Korean Journal of Materials Research
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• v.23 no.11
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• pp.638-642
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• 2013

Chalcopyrite $CuInSe_2$(CIS) is considered to be an effective light-absorbing material for thin film photovoltaic solar cells. CIS thin films have been electrodeposited onto Mo coated and ITO glass substrates in potentiostatic mode at room temperature. The deposition mechanism of CIS thin films has been studied using the cyclic voltammetry (CV) technique. A cyclic voltammetric study was performed in unitary Cu, In, and Se systems, binary Cu-Se and In-Se systems, and a ternary Cu-In-Se system. The reduction peaks of the ITO substrate were examined in separate $Cu^{2+}$, $In^{3+}$, and $Se^{4+}$ solutions. Electrodeposition experiments were conducted with varying deposition potentials and electrolyte bath conditions. The morphological and compositional properties of the CIS thin films were examined by field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). The surface morphology of as-deposited CIS films exhibits spherical and large-sized clusters. The deposition potential has a significant effect on the film morphology and/or grain size, such that the structure tended to grow according to the increase of the deposition potential. A CIS layer deposited at -0.6 V nearly approached the stoichiometric ratio of $CuIn_{0.8}Se_{1.8}$. The growth potential plays an important role in controlling the stoichiometry of CIS films.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3399-3404
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• 2013

A new accepter unit, pyrrolo[3,2-b]pyrrole-2,5-dione, was prepared and utilized for the synthesis of the conjugated polymers containing electron donor-acceptor pair for OPVs. Pyrrolo[3,2-b]pyrrole-2,5-dione unit, regioisomer of the known pyrrolo[3,4-c]pyrrole-1,4-dione, is originated from the structure of stable synthetic pigment. The new conjugated polymers with 1,4-diphenylpyrrolo[3,2-b]pyrrole-2,5-dione, thiophene and carbazole were synthesized using Suzuki polymerization to generate P1 and P2. The solid films of P1 and P2 show absorption bands with maximum peaks at about 377, 554 and 374, 542 nm and the absorption onsets at 670 and 674 nm, corresponding to band gaps of 1.85 and 1.84 eV, respectively. To improve the hole mobility of the polymer with 1,4-bis(4-butylphenyl)-pyrrolo[3,2-b]-pyrrole-2,5-dione unit, which was previously reported by us, the butyl group at the 4-positions of the N-substituted phenyl group was substituted with hydrogen and methyl group. The field-effect hole mobility of P2 is $9.6{\times}10^{-5}cm^2/Vs$. The device with $P2:PC_{71}BM$ (1:2) showed $V_{OC}$ value of 0.84 V, $J_{SC}$ value of 5.10 $mA/cm^2$, and FF of 0.33, giving PCE of 1.42%.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.124-129
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• 2015

Organic electronics are the domain in which the components and circuits are made of organic materials. This new electronics help to realize electronic and optoelectronic devices on flexible substrates. In recent years, organic materials have replaced conventional semiconductors in many electronic components such as, organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs) and organic photovoltaic (OPVs). It is well known that organic light emitting diodes (OLEDs) have many advantages in comparison with inorganic light-emitting diodes LEDs. These advantages include the low price of manufacturing, large area of electroluminescent display, uniform emission and lower the requirement for power. The aim of this paper is to model polymer LEDs and OLEDs made with small molecules for studying the electrical and optical characteristics. The purpose of this modeling process is, to obtain information about the running of OLEDs, as well as, the injection and charge transport mechanisms. The first simulation structure used in this paper is a mono layer device; typically consisting of the poly (2-methoxy-5(2'-ethyl) hexoxy-phenylenevinylene) (MEH-PPV) polymer sandwiched between an anode with a high work function, usually an indium tin oxide (ITO) substrate, and a cathode with a relatively low work function, such as Al. Electrons will then be injected from the cathode and recombine with electron holes injected from the anode, emitting light. In the second structure, we replaced MEH-PPV by tris (8-hydroxyquinolinato) aluminum (Alq₃). This simulation uses, the Poole-Frenkel -like mobility model and the Langevin bimolecular recombination model as the transport and recombination mechanism. These models are enabled in ATLAS- SILVACO. To optimize OLED performance, we propose to change some parameters in this device, such as doping concentration, thickness and electrode materials.

• Journal of the Korean Solar Energy Society
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• v.40 no.5
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• pp.23-34
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• 2020

Concentrator photovoltaic (CPV) system consists of high-quality complex optical elements, mechanical devices, and electronics components and can have the advantages of high integration and high-efficiency energy sources. III-V compound semiconductor cells have proven performance based on high reliability in the aerospace field, but have characteristics that require absolute support of the balance of systems (BOS) such as solar position trackers, receivers with heat sinks, and housing instruments. To determine the optimum parameters of secondary optical elements (SOEs) design for CPV systems, we designed three types of CPV modules, classified as non-SOEs type, reflective mirror type, and CPC lens type. We measured the I-V and P-V characteristics of the prototype CPV modules with the angle of inclination varying from 0° to 12° and with a 500-magnification Fresnel lens. The experimental results assumed misalignment of the solar position tracker or module design of pinpoint accuracy. As a result, at the 0° tilt angle, the CPC lens produced lower power due to the quartz transmittance ratio compared to that by other SOEs. However, for tilt angles greater than 3°, the CPC lens type module achieved high efficiency and stability. This study is expected to help design high-performance CPV systems.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.281-291
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• 2022

Global warming is accelerating due to the use of fossil fuels that have been used continuously for centuries. Now, humankind recognizes its seriousness, and is conducting research on searching for eco-friendly and sustainable energy. In the field of solar energy, which is a kind of eco-friendly and sustainable, many studies are being conducted to enhance the output performance of the module. In this study, the output improvement for the shingled module structure was studied. In order to improve the output performance of the module, the thickness of the encapsulant was increased, and the lamination process conditions have been improved accordingly. After that, the crosslinking rate was analyzed, and the suitability of the lamination process conditions was judged using this. In addition, a peeling test was conducted to analyze the correlation between the adhesion of the encapsulant and the output performance of the module. Finally, the optimization for the encapsulant material and the lamination process conditions for high-power shingled modules was established, and accordingly, the market share of high-power shingled modules in the solar module market can be expected to rise.

• Korean Chemical Engineering Research
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• v.50 no.1
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• pp.177-181
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• 2012

Dye-sensitized solar cells(DSSCs) based on $TiO_2$ film photo anode incorporated with different amount of grapheme nanosheet(GNS) are fabricated and their photovoltaic performance are investigated. The $TiO_2$-GNS composite electrode has been prepared by a direct mixing method. The DSSC performance of this composite electrode was measured using N3 dye as a sensitizer. The performance of DSSCs using the $TiO_2$-GNS composite electrodes is dependent on the GNS loading in the electrodes. The results show that the DSSCs incorporating 0.01 wt% GNS in $TiO_2$photo anode demonstrates a maximum power conversion efficiency of 5.73%, 26% higher than that without GNS. The performance improvement is ascribed to increased N3 dye adsorption, the reduction of electron recombination and back transport reaction as well as enhancement of electron transport with the introduction of GNS. The presence of both $TiO_2$(anatase) and GNS has been confirmed by FieldEmission Scanning Electron Microscopy(FE-SEM). The decrease in recombination due to GNS in DSSCs has been investigated by the Electrochemical Impedance Spectroscopy.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.