• Journal of the Optical Society of Korea
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• 제18권1호
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• pp.71-77
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• 2014

We present design and fabrication of a multi-focusing microlens array (MLA) using a thermal reflow method. To obtain multi-focusing properties with different numerical apertures at the elemental lens of the MLA, double-cylinder photoresist (PR) structures with different diameters were made within the guiding pattern with both photolithographic and partial developing processes. Due to the base PR layer supporting the thermal reflow process and the guiding structure, the thermally reflowed PR structure had different radii of curvatures with lens shapes that could be precisely modeled by the initial volume of the double-cylinder PR structures. Using the PR template, the hexagonally packed multi-focusing MLA was made via the replica molding method, which showed four different focal lengths of 0.9 mm, 1.1 mm, 1.6 mm, and 2.5 mm, and four different numerical apertures of 0.1799, 0.2783, 0.3973, and 0.4775.

• Current Optics and Photonics
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• 제1권5호
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• pp.505-513
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• 2017

Measuring the thickness of thin films is strongly required in the display industry. In recent years, as the size of a pattern has become smaller, the substrate has become larger. Consequently, measuring the thickness of the thin film over a wide area with low spatial sampling size has become a key technique of manufacturing-yield management. Interferometry is a well-known metrology technique that offers low spatial sampling size and the ability to measure a wide area; however, there are some limitations in measuring the thickness of the thin film. This paper proposes a method to calculate the thickness of the thin film in the following two steps: first, pre-estimation of the thickness with the phase at the peak position of the interferogram at the bottom surface of the thin film, using white-light phase-shift interferometry; second, accurate correction of the measurement by fitting the interferogram with the theoretical pattern through the estimated thickness. Feasibility and accuracy of the method has been verified by comparing measured values of photoresist pattern samples, manufactured with the halftone display process, to those measured by AFM. As a result, an area of $880{\times}640$ pixels could be measured in 3 seconds, with a measurement error of less than 12%.

• Macromolecular Research
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• 제14권3호
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• pp.300-305
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• 2006

The chemical structure of a semi-aromatic polyimide-I, which was prepared by the chemical imidization of cyclopentanetetracarboxylic dianhydride and 2,2-bis(4-aminophenyl)hexafluoropropane, was characterized by $^{13}C-NMR$ spectroscopy. The chemically imidized polyimide-I was used for the preparation of a photosensitive polyimide (PSPI) through the addition of benzophenone and benzophenone oxime hexamethylene diurethane (BOHD), a photobase generator containing oxime-urethane groups. The polyimide-I film containing benzophenone and BOHD was not soluble in 2.38 wt% tetrabutylammonium hydroxide solution in $H_2O$. However, it became soluble following irradiation with 310 nm UV light. A positive tone image with a resolution of $5{\mu}m$ was obtained with this PSPI, having sensitivity($D_c$) of $1.2J/cm^2$ and contrast(${\gamma}_p$) of 1.08. Thus, a polyimide, which is not intrinsically photosensitive, can become photosensitive through the addition of a photobase generator containing oxime-urethane groups as a photosensitive compound.

• E2M - 전기 전자와 첨단 소재
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• 제10권1호
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• pp.8-14
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• 1997

The UV/O$_{3}$ dry cleaning has been well known in removing organic molecules. The UV/O$_{3}$ dry cleaning method was performed to clean the Si wafer surfaces and contact holes contaminated by organic molecules such as residual PR. During the cleaning process, the Si surfaces were analyzed with X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM) and ellipsometer. When the UV/O$_{3}$ dry cleaning at 200'C was performed for 3 minutes, the residual photoresist was almost removed on Si wafer surfaces, but Si surfaces were oxidized. For UV/O$_{3}$ application of contact hole cleaning, the contact string were formed using the equipment of ISRC (Inter-university Semiconductor Research Center). Before Al deposition, UV/O$_{3}$ (at 200.deg. C) dry cleaning was performed for 3 minutes. After metal annealing, the specific contact resistivity was measured. Because UV/O$_{3}$ dry cleaning removed organic contaminants in contact holes, the specific contact resistivity decreased. Each contact hole size was different, but the specific contact resistivities were all much the same. Thus, it is expected that the UV/O$_{3}$ dry cleaning method will be useful method of removal of the organic contaminants at smaller contact hole cleaning.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.829-834
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• 2008

Two-dimensional photonic quasicrystal (PQCs) template patterns have been fabricated on a 1.1 ${\mu}m$-thick DMI-150 photoresist using a multiple-exposure holographic method. A 442-nm HeCd laser was utilized as a light source and the holographic exposure was carried out at a fixed angle of ${\theta}$ = 6$^{\circ}$. After the first holographic exposure, the sample was rotated to a proper angle and the second exposure was performed to the same manner. This exposure process was repeated n/2 times to obtain n-fold symmetric PQC patterns and then the sample was developed. The diffraction patterns of the fabricated PQC template were observed using a 632.8-nm HeNe laser. The fabricated PQCs exhibited 8, 10 and 12-fold rotational symmetry, which was in a good agreement with the interference simulation results. In addition, the diffraction patterns with n-rotation symmetry were observed for the corresponding n-fold PQCs. We believe that the multiple-exposure holography is a good method to fabricate the mesoscale PQCs with a high rotational symmetry.

• 한국전기전자재료학회논문지
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• 제13권3호
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• pp.183-187
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• 2000

In this study the SrBi$_2$Ta$_2$$O_{9}$ (SBT) thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$plasma as function of CHF$_3$/(Ar+CHF$_3$)gas mixing ratio. Maximum etch rate of SBT thin films was 1650 $\AA$/min and the selectivities of SBT to Pt and photoresist(PR) were 1.35 and 0.94 respectively under CHF$_3$/(Ar+CHF$_3$) of 0.1 For study on etching mechanism of SBT thin film X-ray photoelectron spectroscopy (XPS) surface analyses and secondary ion mass spectrometry (SIMS) mass analysis of etched SBT surfaces were performed. Among the elements of SBT thin film. M(Sr, Bi, Ta)-O bonds are broken by Ar ion bombardment and form SrF and TaF$_2$by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardment. Scanning electron microscopy(SEM) was used for the profile examination of etched SBT film and the cross-sectional SEM profile of etched SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85$^{\circ}$X>.

• 전기학회논문지
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• 제56권8호
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• pp.1430-1435
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• 2007

We developed a 440MHz surface acoustic wave (SAW) microsensor integrated with pressure-temperature sensors and ID tag. Two piezoelectric substrates were bonded, in which ${\sim}150\;{\mu}m$ cavity was structured. Four sides were completely sealed by JSR photoresist (PR). Pressure sensor was placed on the top substrate, whereas ill tag and temperature sensor were placed on the bottom substrate. Using network analyzer, the developed microsensor was wirelessly tested. Sharp reflection peaks with high S/N ratio, small signal attenuation, and small spurious peaks were observed. All the reflection peaks were well matched with the coupling of mode (COM) simulation results. With a 10mW RF power from the network analyzer, a ${\sim}1$ meter readout distance was observed. Eight sharp ON reflection peaks were observed for ID tag. Temperature sensor was characterized from $20^{\circ}C$ to $200^{\circ}C$. A large phase shift per unit temperature change was observed. The evaluated sensitivity was ${\sim}10^{\circ}/^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.323-327
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• 2004

The bubble flow from the wafer surface during plating process was studied in this paper. The plating shape in the opening of photoresist becomes gradated shape in the fountain plating system, because bubbles from the wafer surface are difficult to escape from the deep openings, vias. So, we designed the tilted electrode ring contact to get uniform bump height on all over the wafer and evaluated the film uniformity by SEM and ${\alpha}-step$. In ${\alpha}-step$ measurement, film uniformities in the fountain plating system and the tilted electrode ring contact system were ${\pm}16.6%,\;{\pm}4%$ respectively.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.325-331
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• 2007

In this study, the inter-metal dielectric material of FSG was changed by low-k material in $0.13{\mu}m$ foundry-compatible technology (FCT) device process based on fluorinated silicate glass (FSG). Black diamond (BD) was used as a low-k material with a dielectric constant of 2.95 for optimization and yield-improvement of the low-k based device process. For yield-improvement in low-k based device process, some problems such as photoresist (PR) poisoning, damage of low-k in etch/ash/cleaning process, and chemical mechanical planarization (CMP) delamination must be solved. The PR poisoning was not observed in BD based device. The pressure in CMP process decreased to 2.8 psi to remove the CMP delamination for Cu-CMP and USG-CMP. $H_2O$ ashing process was selected instead of $O_2$ ashing process due to the lowest condition of low-k damage. NE14 cleaning after ashing process lot the removal of organic residues in vias and trenches was employed for wet process instead of dilute HF (DHF) process. The similar-state of SRAM yield was obtained in Cu/low-k process compared with the conventional $0.13{\mu}m$ FCT device by the optimization of these process conditions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.232-232
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• 2010

정보화 산업의 발달은 DRAM, flash memory 등을 포함한 기존의 반도체 메모리 소자를 대체할 수 있는 차세대 메모리 소자에 대한 개발을 요구하고 있다. 특히 magnetic random access memory (MRAM)는 SRAM과 대등한 고속화 그리고 DRAM 보다 높은 기록 밀도가 가능하고 낮은 동작 전압과 소비전력 때문에 대표적인 차세대 비휘발성 메모리로 주목받고 있다. 또한 MRAM소자의 고집적화를 위해서 우수한 프로파일을 갖고 재증착이 없는 나노미터 크기의 magnetic tunnel junction (MTJ) stack의 건식 식각에 대한 연구가 선행되어야 한다. 본 연구에서는 고밀도 반응성 이온 식각법(Inductively coupled plasma reactive ion etching; ICPRIE)을 이용하여 재증착이 없이 우수한 식각 profile을 갖는 CoFeB과 IrMn 박막을 형성하고자 하였다. Photoresist(PR) 및 Ti 박막의 두 가지 마스크를 이용하여 HBr/Ar, HBr/$O_2$/Ar 식각 가스들의 농도를 변화시키면서 CoFeB과 IrMn 박막의 식각 특성들이 조사되었다. 자성 박막과 동일한 조건에 대하여 hard mask로서 Ti가 식각되었다. 좋은 조건을 얻기 위해 HBr/Ar 식각 가스를 이용 식각할 때 pressure, bias voltage, rf power를 변화시켰고 식각조건에서 Ti 하드마스크에 대한 자성 박막들의 selectivity를 조사하고 식각 profile을 관찰하였다. 식각 속도를 구하기 위해 alpha step(Tencor P-1)이 사용되었고 또한 field emission scanning electron microscopy(FESEM)를 이용하여 식각 profile을 관찰함으로써 최적의 식각 가스와 식각 조건을 찾고자 하였다.