• 한국응용과학기술학회지
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• 제14권2호
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• pp.27-34
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• 1997

Naphthoquinone-1,2-diazide-5-sulfonyl [NDS]derivatives members of Quinone diazide compound that are utilizable as photoresist for printing plate were synthesized, and photoresist were prepared by mixing these derivatives with a matrix resin(PF, CF) at various weight ratios. Photosensitive characteristics of photoresist were studied by Gray scale method, and SEM to analyze if they can be used as photosensitive material in a printing plate. Experimental results showed using IR, UV, NDS derivatives were photoconverted and developer-soluble photoresist were produced. Photoresist in the mixing ratio of 1:4 of NDS[II] and CF resin gave rise to the highest dissolution rate. In addition, photoresist obtained at this condition resulted in the most superior sensitivity.

• 한국결정성장학회지
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• 제13권2호
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• pp.68-72
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• 2003

본 논문에서는 3차원 마이크로구조물을 위한 새로운 UV-LIGA 공정을 개발하였다. 일반적으로 photoresist는 얇은 두께로 코팅이 되지만, SU-8은 수십 $\mu\textrm{m}$ 이상의 두께를 가질 수 있으며, 높은 형상비를 갖는다. SU-8과 같은 Thick photoresist는 기존의 baking 공정과 같이 급격한 cool down을 할 경우 stress에 의한 crack이 발생한다. 이와 같은 경우 도금을 위한 마이크로구조물이 구현이 되지 않는다. SU-8의 코팅, bake에서의 시간 조절, 그리고 PEB의 시간 조절 및 cool down조절을 통하여 stress에 의한 crack이 발생하지 않도록 3차원 마이크로구조물을 제작 할 수 있도록 하였다.

• 센서학회지
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• 제15권5호
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• pp.357-361
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• 2006

This paper reports a new technology to implement complex PDMS microchannels, which are simply constructed using three-dimensional photoresist structures as mold for PDMS replica process. The process utilizes LOR resist as a sacrificial layer to levitate the structural photoresist and multi-step exposure to control the thicknesses of photoresist structures. Various shapes of photoresist structures were successfully fabricated. Using the PDMS replica method, the three-dimensional photoresist structures are demonstrated to be applicable for implementing complex microchannels in PDMS. In addition, more complex multilevel microchannels are constructed by bonding two PDMS layers with just single PDMS alignment.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.197-199
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• 1987

This paper is investigated on characteristics of photoresist using inorganic a-$Se_{75}Ge_{25}$. The sensitivity of negative photoresist showing insolubility against alkalie solution, with Ag-photodoped, is more prominent than that of positive photoresist used with only a-$Se_{75}Ge_{25}$. It is also showed that the contrast of negative photoresist, ${\gamma}=2.9$, is more prominent than that of positive photoresist, ${\gamma}=1.4$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1038-1039
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• 2004

We developed a new photoresist which was composed of polyaniline, uv-curing agent, N-methyl-2- pyrrolidine (NMP) and N-Butyl alcohol (BuOH) as solution. The photoresist is characterized by the capability of being developed in water. We successfully patterned pentacene thin film, which was vulnerable to organic solvent and thus could not be patterned by the conventional photolithography process, with the water soluble photoresist and the minimum feature size was found to be 2um.

• 반도체디스플레이기술학회지
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• 제3권1호
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• pp.27-30
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• 2004

In this work, the variation of the sidewall profile of a thick photoresist on the wavelength and proximity gap was investigated. PMER P-LA900PM, DNQ (DiazoNaphthoQuinone) novolac type photoresist, is used for experiments. The calculated results agreed well with the experimental results.

• 전자공학회논문지A
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• 제31A권7호
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• pp.69-75
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• 1994

A very fine pattern formation process using double exposure is investigated, which can overcome the resolution limit of optical wafer stepper. The very fine pattern can be obtained by moving the edge profile of large pattern by means of moving the stepper stage. The simulation results show that the light transmittance decrease bellow 9%, and the contrast increase to 16.6% for the 0.3$\mu$m photoresist pattern exposeed by the double exposure using i-line wafer stepper. And the experimental results show that fine photoresist pattern as short as 0.2$\mu$m can be obtained without a loss of photoresist thickness. Also, it proves that the depth of focus for 0.3$\mu$m pattern is longer than $1.5\mu$m. And, the very fine negative photoresist pattern was formmed by using the double exposure technique and the image reversal process.

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.25-33
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• 2007

A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process, which is named SCNU-EBL, has been developed for semiconductor nanometer pattern design and fabrication. The simulator is composed of a MC simulation model of electron trajectory into solid targets, an Gaussian-beam exposure simulation model, and a development simulation model of photoresist using a string model. Especially for the trajectories of incident electrons into the solid targets, the inner-shell electron scattering of an target atom and its discrete energy loss with an incident electron is efficiently modeled for multi-layer resists and heterogeneous multi-layer targets. The simulator was newly applied to the development profile simulation of ZEP520 positive photoresist for NGL(Next-Generation Lithography). The simulation of ZEP520 for electron-beam nanolithography gave a reasonable agreement with the SEM experiments of ZEP520 photoresist.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.47-50
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• 1987

There are various holographic recording materials, such as Dichromated Gelatin, Silver Halide, Thermoplastic, Photoresist. In this paper especially, we used Photoresist to make the phase holographic grating. Deep-groove diffractive grating formed in relatively thin holographic recording material is to express high diffraction efficiency. Phase holographic grating recorded In photoresist can be used very practical because it has the high diffraction efficiency, and it is possible to make a replication easily. So, it has the merit in recording the optical holographic grating than any other materials.

• 통합자연과학논문집
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• 제2권4호
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• pp.252-264
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• 2009

Lithographic data obtained from PHS(polyhydroxy styrene) having various functionalities were investigated by using a photoacid generator based on diazo and onium type. Chemically amplified photoresist based on the KrF type photoresist was developed by using a photoacid generator and multi-functional resin. Thermal stability for the photoacid generator showed that the increase of loading amount of photoacid generator resulted in the decrease of glass transintion temperature (Tg). The photoacid generators having methyl, ethyl, or propyl group in their cationic structure produced T-top structure in pattern profile due to the effect of acid diffusion during the generation of acid in the resist. The increase of carbon chain length in the anionic structure of photoacid generators resulted in lower pattern resolution due to the interruption of acid diffusion.