• Korean Journal of Optics and Photonics
• /
• v.10 no.6
• /
• pp.482-486
• /
• 1999

Ultrafast carrier dynamics of LT-GaAs semiconductors was investigated by using time-resolved photoreflectance spectroscopy. We can see that decay dynamics of photoreflectance generated by carriers depends strongly on the excitation wavelength due to the structure distortion of LT-GaAs semiconductors. Ultrafast trapping of excited carriers into deep trap states gives rise to transient photoreflectance decays with a lifetime shorter than 1 ps. Also, the long-lived photoreflectance is attributed to the carriers trapped deeply at point defects. fects.

• Electrical & Electronic Materials
• /
• v.7 no.6
• /
• pp.490-495
• /
• 1994

We investigated photoreflectance of semi-insulating GaAs with respect to modulation sources, that is, modulation beam intensity, modulation frequency, temperature, and thickness of sample. PR spectra by each modulation source turned out to be signals of low electric field third differential, and band gap values of sample were fitted by least square root method for Aspnes' theoretical equation.

• Electrical & Electronic Materials
• /
• v.7 no.4
• /
• pp.300-305
• /
• 1994

We determined the alloy composition of the liquid-phase epitaxy(LPE) grown $Al_{x}$G $a_{1-x}$ As by the photoreflectance(PR), and observed the variation of PR signal by changing the condition of annealing and thickness of epilayer. As the measuring temperature was decreased, the broadening parameter was decreased, and the amplitude of PR signal was increased. When the temperature of annealing was increased, the surface carrier concentration was decreased and then the shape and amplitude of PR signal were affected by the surface electric field. The structure change was observed when the specimen was annealed for long time at a high temperature. We found that the surface electric field increased when the thickness of epilayer was decreased by etching, because the band bending was increased by the decreased of the width of depletion layer....

• Proceedings of the Korean Society of Laser Processing Conference
• /
• 2004.10a
• /
• pp.95-101
• /
• 2004

• Laser Solutions
• /
• v.8 no.3
• /
• pp.5-10
• /
• 2005

[ $InxGa_{1-x}P/GaAs$ ] structures were grown by chemical beam epitaxy(CBE), Pure phosphine($PH_3$) gases were used as group V sources. for the group III sources, TEGa, TmIn were used. $InxGa_{1-x}P$ epilayer was grown on SI-GaAs substrate and has a 1-${\mu}m$ thick. We have investigated the characteristics of $InxGa_{1-x}P$ by the photoreflectance(PR) spectroscopy, The PR spectrum of $InxGa_{1-x}P$ shows third-derivative feature whose Peaks Provide energy gap. The energy gap of $InxGa_{1-x}P$ has deduced composition x. From temperature dependance of PR spectra, temperature coefficient is $dEg/dT=-3.773{\times}10^{-4}$ eV/K, and Varshni coefficients $\alpha$ and $\beta$ values obtained $4{\times}10^4$ eV/K and 267 K respectively. Also, interaction $\alpha$B was 19.4 meV using the Bose-Einstein temperature relation, and $\Theta$ value related the average phonon frequency were 101.4 K. In particular, shoulder peak related to defects observed in PR signal that measured in temperature 82 K.

• Korean Journal of Materials Research
• /
• v.4 no.6
• /
• pp.723-729
• /
• 1994

We have investigated on the photoreflectance(PR) of heavily Si-doped n-GaAs. The PR response was found to be dependent of modulation beam intensity, modulation frequency, and temperature. From the observed Franz-Keldysh oscillation(FKO), we determined the band gap energy and surface electric field. As the temperature is decreased from room temperature to 77K, the band gap energy increases while the surface electric field decreases. The quality of crystal was greatly increased after thermal annealing for 5 min at $500^{\circ}C$.

• Journal of the Korean Vacuum Society
• /
• v.6 no.3
• /
• pp.263-266
• /
• 1997

We studied an interfacial characteristics of $In_{0.1}Ga_{0.9}As$/ GaAs by photoreflectance (PR) measurement at room temperature. With increasing thickness of epitaxial layer, Franz-Keldysh oscillation (FKO) periods of PR signals were decreased, and interfacial electric field was decreased. This can be explained by the increases of defects due to lattice mismatch near the heterointerface between InGaAs and GaAs. For the thickness of epitaxial layer thinner than the 300$\AA$, InGaAs epitazial layer closed to critical thickness and increased strain, and then the bandgap energy shifted high greatly.

• Journal of the Korean Vacuum Society
• /
• v.18 no.3
• /
• pp.208-212
• /
• 2009

The optical characterization of self-assembled InAs/AlAs quantum dots(QD) grown by MBE were investigated using photoreflectance spectroscopy. The intensities of the signals of the GaAs buffer and wetting layer(WL) changed with the width of the WL layer. The PR spectrum for the sample, in which QDs layer were etched off at room temperature, indicated that the broadened signal ranging $1.1{\sim}1.4\;eV$ was originated from InAs QDs and WL. The intensities of signals of GaAs buffer and the WL changed with the WL width. A red shift of the PR peak of WL are observed when the annealing temperatures range from $450^{\circ}C$ to $750^{\circ}C$, which indicates that the interdiffusion between dots and capping layer is caused by improvement in size uniformity of QDs.

• Journal of the Korean Vacuum Society
• /
• v.8 no.3B
• /
• pp.308-314
• /
• 1999

We used the photoreflectance spectroscopy for characterization of the infrared photodetector structure we GaAs/$Al_{0.3}Ga_{0.7}As$ multi-quantum well (MQW) structures grown by molecular beam epitaxy (MBE) method. Energy gap related transitions in GaAS and AlGaAs were observed. The Al composition(x) was determined b Sek's composition formula. MQW related transition energies were identify the transitions, the experimentally observed energies were compare with results of the envelope function approximation for a rectangular quantum well.

• Electrical & Electronic Materials
• /
• v.8 no.4
• /
• pp.418-425
• /
• 1995

The surface of GaAs was treated by using the 0.1M solution of N $a_{2}$S.9 $H_{2}$O. The passivation of the surface in this sample was investigated by the photoreflectance(PR) experiment. The surface electric field( $E_{s}$) and built-in voltage( $V_{bi}$ ) discussed from Franz-Keldysh oscillation of PR signals. The density of surface states and Fermi level of GaAs treated with N $a_{2}$S.9 $H_{2}$O for 40min were determined 1.61*10$^{12}$ c $m^{-2}$ and 0.73eV. These values were about 15 and 10% smaller than those in untreated sample.e.