• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1058-1062
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• 2009

For the investigation of the mechanism of photoelectric characteristics of a hydrogenated amorphous silicon thin film transistor(a-Si:H TFT), spectral characteristics of various backlights were analyzed in terms of the photon energy at each wavelength. Photon energy spectral characteristics were obtained through the multiplication of each photon energy and spectral intensities of backlights at each wavelength and the total photon energies were obtained by the integration of the photon energy spectrums. From the comparison of the experimental photo leakage current and the calculated photon energy, it was possible to conclude that the absorption of illuminated backlight to a-Si:H layer and the generation of electrons and holes are mainly carried out at the wavelength less than 500 nm as described in previous reports.

• Nuclear Engineering and Technology
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• 제54권7호
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• pp.2670-2689
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• 2022

STREAM - a lattice transport calculation code with method of characteristics for the purpose of light water reactor analysis - has been developed by the Computational Reactor Physics and Experiment laboratory (CORE) of the Ulsan National Institute of Science and Technology (UNIST). Recently, efforts have been taken to develop a photon module in STREAM to assess photon heating and the influence of gamma photon transport on power distributions, as only neutron transport was considered in previous STREAM versions. A multi-group photon library is produced for STREAM based on the ENDF/B-VII.1 library with the use of the library-processing code NJOY. The developed photon solver for the computation of 2D and 3D distributions of photon flux and energy deposition is based on the method of characteristics like the neutron solver. The photon library and photon module produced and implemented for STREAM are verified on VERA pin and assembly problems by comparison with the Monte Carlo code MCS - also developed at UNIST. A short analysis of the impact of photon transport during depletion and thermal hydraulics feedback is presented for a 2D core also from the VERA benchmark.

• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.16-19
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• 2013

Frequency filters with various filtering wavelengths were used in the photoelectric characterization of hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and the experimental results were described and analyzed in terms of the photon energy spectral characteristics calculated from the integration of the photon energy and the spectral intensity of transmitted backlight through the filters at each wavelength. From the comparison of the photocurrents and the calculated photon energy spectrums for the filtered ranges of wavelength, it was possible to conclude that the photocurrents are closely related to the photon energy spectrums of the backlight.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.70-71
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• 2009

Photoelectric characteristics of a hydrogenated amorphous silicon thin film transistor(a-Si:H TFT) were obtained for the illumination from various backlight sources and the results were compared and analyzed in terms of the photon energy spectral characteristics of the backlights obtained from the integration of the multiplication of the photon energy and the spectral intensity at etch wavelength. It was possible to conclude that the absorption of illuminated backlight to a-Si:H layer and the generation of electrons and holes are mainly carried out at the wavelength less than 500nm.

• Journal of the Optical Society of Korea
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• 제13권2호
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• pp.299-299
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• 2009

• Journal of Radiation Protection and Research
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• 제26권3호
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• pp.203-206
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• 2001

The mathematical processing (unfolding) of pulse height spectra from a scintillation detector helps to calculate the photon fluence rate energy distribution in a measured photon field. The data processing is based on the knowledge of detection system response function and directional dependence respectively. The experimental results of the photon fields measurements in the vicinity of the spent fuel temporary storage and inside the storage hall are presented. The containers Castor 440 are used for temporary storing of the burnt up fuel assemblies in the Czech nuclear power plant Dukovany. A set of periodical measurements was performed in order to get basic information on the time dependence of the photon fields spatial distributions and spectral characteristics in the temporary storage hall and its vicinity. The photon fields were measured by the scintillation system. The obtained photon fields spatial distributions and spectral characteristics present the information on the radiation hazard in the storage.

• 한국방사선학회논문지
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• 제14권3호
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• pp.193-201
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• 2020

본 연구 목적은 선형가속기를 통해 입사된 전자가 표적(target)을 구성하는 물질과 두께에 따른 광자 특성을 평가하는 것이다. 전산모사 설계는 2 mm 두께의 텅스텐 단일물질과 1.8 mm 와 2.3 mm 두께의 텅스텐과 구리 복합물질로 구성된 선형가속기 표적(Target)이다. 연구 방법은 첫째, 표적 내 일차 입자의 거동은 전자플루언스와 전자 에너지 축적으로 평가하였다. 둘째, 표적 내에서 발생하는 광자는 광자 플루언스로 평가하였다. 셋째, 표적으로부터 1 m 거리에서의 광자 각-에너지 분포는 광자 플루언스로 평가하였다. 그 결과 첫째, 단일물질과 복합물질 표적에서의 전자 플루언스와 에너지 축적을 통해 일차 입자인 전자가 표적 밖으로 방출되지 않았으며, 표적 두께에 따라 전자가 음의 선형적으로 감쇄하였다. 둘째, 복합물질 표적이 단일물질 표적보다 광자 생성이 더 높은 것으로 나타났다. 이는 물질 구성 성분과 두께가 광자 생성에 영향을 준다는 사실을 확인하였다. 셋째, 차폐 해석에 필요한 각 분포에 따른 광자 플루언스를 계산하였다. 이러한 결과는 선형가속기 표적을 구성하는 물질과 두께에 따라 광자 생성률이 차이 나는 것을 확인할 수 있었다. 따라서, 본 연구는 국가에서 도입 중인 컨테이너 보안 검색용 선형가속기 사용시설의 설계 및 운영 시 필요한 자료이며, 방사선 방호에 기초 자료로 활용될 수 있을 것으로 생각된다.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2002년도 학술대회논문집
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• pp.329-334
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• 2002

This study evaporates TiO$_2$ layer thickness differently with RF sputtering method on Si Wafer(n-100). Thin film is made with the structure of Si+TiO$_2$ and Si+TiO$_2$+Al by evaporating TiN which is used as Antireflection of superintegrated semiconductor integrated circuit with Photo Catalyst. The research is performed to increase the characteristics of photon energy according to TiO$_2$ thickness and the reliability and reproducibility of TiO$_2$ thin film. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant ($\varepsilon$$_1$, $\varepsilon$$_2$) has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 기술교육전문연구회
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• pp.75-81
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• 2003

This study evaporates ZnO layer thickness differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1{\varepsilon}_2)$ has larger peak values as it’s thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.73-79
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• 2002

This study evaporates ZnO layer thickness' differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1,{\varepsilon}_2)$ has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.