• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.218-221
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• 2011

We modified the optical properties of the $CuInS_2$ nanocrystal (NC) by alloying. Nanocrystals (NCs) with alloyed cores were synthesized by refluxing the as-synthesized $CuInS_2$ NCs with a mixture of cadmium acetate, zinc acetate and palmitic acid. The shift in emission wavelength of the NCs after shell layer formation was minimized by alloying. The photoluminescence (PL) spectra showed significant reduction of emission intensity. A detailed study on the emission process of NCs implies that the formation of shell layers with small lattice mismatch minimized the mismatch strain generated from the shell layers in contrast to core alloyed NCs. In particular, time-resolved PL spectra of the NCs showed a significant increase in the lifetime of excited carriers by modifying the band alignment of the NCs by modifying the shell composition.

• Transactions on Electrical and Electronic Materials
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• v.6 no.4
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• pp.169-172
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• 2005

[ $Y_2O_3:Eu$ ] powder was synthesized using a solution-combustion method by dissolving $(CH_3CO_2)_3Y$ and $(CH_3CO_2)_3$ Eu in methyl-alcohol solution. Results from X-ray diffractometery (XRD), thermogravimetry (TG)-differential thermal analysis (DTA) show that $Y_2O_3:Eu$ crystallizes completely when the dry powder is sintered at $500^{\circ}C$. The investigated optical properties were the photoluminescence emission spectra, the excitation spectra and luminescence decay curve. Europium (Eu) concentration had no observable effect on the optical spectrum which depended on the emission intensity. The mean lifetime of synthesized phosphors was $2.3\~2.6 ms$.

• Journal of the Korean Ceramic Society
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• v.44 no.1 s.296
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• pp.32-36
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• 2007

Zinc gallate $(ZnGa_2O_4)$ thin film phosphors have been formed on ITO glass substrates by a sol-gel spinning coating method. For the formation of the film phosphors, the starting materials of zinc acetate dihydrate, gallium nitrate hydrate and 2-methoxyethanol as a solution were used. The thin films deposited were firstly dried at $100^{\circ}C$ and fired at $500^{\circ}C\;or\;600^{\circ}C$ for 30 min and then, annealed $500^{\circ}C\;or\;600^{\circ}C$ at for 30 min under an annealing atmosphere of 3% $H_2/Ar$. The thin films deposited on ITO glass plates showed the (220), (222), (400), (422), (511), and (440) peaks of spinel structure as well as the (311) peak indicating a standard powder diffraction pattern. The surface morphologies of the thin film phosphors were observed with a firing and an annealing condition. The $ZnGa_2O_4$ film phosphors showed the blue emission spectra around 410 nm as well as the emission spectra in the UV region (360-380 nm).

• ALGAE
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• v.30 no.2
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• pp.171-179
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• 2015

Organic light-emitting materials in marine macrophytes from various coastal environments were identified. Twentyeight species from the solvent fractions were examined and identified as candidates for bioorganic light-emitting materials using photoluminescence (PL) spectra and gas chromatography-mass spectrometry. We selected 16 solvent fractions from a total of 1,221 prepared from Ishige okamurae, Sargassum confusum, Grateloupia elliptica, Chondracanthus intermedius, Porphyra yezoensis, Meristotheca papulosa, Gelidium amansii, and Scytosiphon lomentaria. The maximum light-emitting PL spectra appeared at various colors, mainly between blue and green, based on chromaticity coordinates, from solvent fractions of M. papulosa, G. amansii, G. elliptica, P. yezoensis, S. lomentaria, I. okamurae, and C. intermedius. These results will contribute to the development of novel organic light-emitting materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.263-267
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• 2007

We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium-silicate thin films. The films were fabricated on substrates by using a radio-frequency magnetron sputtering method and subsequent rapid thermal annealing (RTA). The mechanism for the formation of the europium silicates during the annealing process was investigated by using X-ray diffraction (XRD) spectroscopy, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A series of narrow PL spectra from $Eu^{3+}$ ions was observed from the film annealed in $O_2$ ambient. Broad PL spectra associated with $Eu^{2+}$ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, were observed from the thin film annealed at $1000^{\circ}C$ in $N_2$ ambient.

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.548-553
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• 2005

Trivalent cerium$(Ce^{3+})$ activated YAG (yttrium aluminum garnet, $Y_3Al_5O_{12})$) thin films phosphor were deposited on quartz glass substrates by rf magnetron sputtering. The effects of sputtering parameters, annealing atmosphere, and substrates on growing behaviors and luminescent properties were investigated. The sputtering parameters were $O_2/(Ar+O_2)$ gas ratio, rf power, and deposition time. XRD (X-ray diffractometery) spectra exhibited that as-deposited films were amorphous, while they were transformed to the crystalline phases by post-annealing. The crystallinity and the atomic ratio strongly depended on the sputtering gas ratio $O_2/(Ar+O_2)$. High quality YAG:Ce thin films could be obtained at the gas ratio of $50\%$ oxygen. After annealing process, PL (Photoluminescence) spectra excited at 450nm showed a yellow single band at 550nm. The films deposited at the sputtering gas ratio of 50% oxygen exhibited the highest PL intensity.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.379-384
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• 1994

Room-temperature photoluminescent porous Si has been formed by etching Si wafer u-ith the solution of $HF:HNO_{3}: H_{2}O$=l : 5 : 10. We have observed photoluminescence(PL) spectra similar to those reported recently for porous-Si films formed by anodic etching with HF solutions. We have also investigated the dependence of PI, spectra on the etching time which was varied from 1 to 10 minutes. We found that 5-minute etching gave us the strongest PL intensity. We also found by atomic force microscopy( AFM) measurements that the surface fearure size became smaller for longer etching time and the average feature size of the etched Si wafer for 5-minute was about 1, 500~2, 000$\AA$. This indicates that the surface feature of the etched porous Si affects the PL intensity of the sample.

• Bulletin of the Korean Chemical Society
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• v.31 no.4
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• pp.798-802
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• 2010

From time-resolved optical emission spectra, we have investigated the effects of a transverse magnetic field on the expansion of a plasma plume produced by laser ablation of a ZnO:$P_2O_5$ ceramic target in oxygen active atmosphere. The emission spectra of $Zn^{+*}$, $P^{+*}$, and $Zn^*$ neutrals in the presence of magnetic field turn out to be considerably different from those without magnetic field. The characteristics of the deposited films grown on amorphous fused silica substrates by pulsed laser deposition (PLD) are examined by analyzing their photoluminescence (PL), X-ray diffraction (XRD), and UV-visible spectra.

• Bulletin of the Korean Chemical Society
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• v.34 no.9
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• pp.2769-2773
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• 2013

Red phosphors $Ca_{(1-1.5x)}Eu_xWO_4$ and $Ca_{(1-2x)}Eu^_xNa_xWO_4$ were synthesized with various concentrations x of $Eu^{3+}$ ions by using a solid-state reaction method. The crystal structure of the red phosphors were found to be a tetragonal scheelite structure with space group $I4_1/a$. X-ray diffraction (XRD) results show the (112) main diffraction peak centered at $2{\theta}=28.71^{\circ}$, and indicate that there is no basic structural deformation caused by the vacancies ${V_{Ca}}^{{\prime}{\prime}}$ or the $Eu^{3+}$ (and $Na^+$) ions in the host crystals. Densities of $Ca_{(1-1.5x)}Eu_xWO_4$ were measured on a (helium) gas pycnometer. Comparative results between the experimental and theoretical densities reveal that $Eu^{3+}$ (and $Na^+$) ions replace the $Ca^{2+}$ ions in the host $CaWO_4$. Also, the photoluminescence (PL) emission and photoluminescence excitation (PLE) spectra show the optical properties of trivalent $Eu^{3+}$ ions, not of divalent $Eu^{2+}$. Raman spectra exhibit that, without showing any difference before and after the doping of activators to the host material $CaWO_4$, all the gerade normal modes occur at the identical frequencies with the same shapes and weaker intensities after the substitution. However, the FT-IR spectra show that some of the ungerade normal modes have shifted positions and different shapes, caused by different masses of $Eu^{3+}$ ions (or $Na^+$ ions, or ${V_{Ca}}^{{\prime}{\prime}}$ vacancies) from $Ca^{2+}$.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.2
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• pp.97-103
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• 1999

Zinc sulfide is a ll-VI compound with a large direct band gap in the near-UV region and a promising material for blur-light emitting diode and laser diode. It was identified that the structure had zinc blonde structure through the analysis of X-ray diffraction patterns. It's lattice constant was measured to be $a_o=5.411{\AA}$. The optical absorption, photocurrent, and photoluminescence spectra were measured to investigate the optical properties of zinc sulfide single crystal. The optical energy band gap measured at room temperature was 3.61eV The energy band gap of zinc sulfide annealed in zinc vapor at $800^{\circ}C$ was lower 0.1eV than that of as-grown zinc sulfide through the analysis of the photocurrent spectra. The photoluminescence spectra were measured ranging from 30K to 293K for the two cases of as-grown and annealed zinc sulfide. As-grown ZnS single crystal had peaks at 350nm, 392nm, 465nm, and annealed zinc sulfide had peaks at 349nm.