• Journal of Integrative Natural Science
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• v.2 no.3
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• pp.215-218
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• 2009

A silaspirotropylidene has been obtained from the reaction of the lithium salt of tetraphenylsilole dianion with 2 equiv of diphenylcyclopropene, followed by quenching with Me3SiCl. Silaspirotropylidene exhibits an unusual optical property its optical property was characterized by UV-vis and fluorescence spectroscopy. Absorption wavelength maxima of silaspirotropylidene was 420 nm. silaspirotropylidene displayed an emission band at 550 nm with excitation wavelength of 420 nm.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.50-50
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• 1999

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.3
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• pp.472-476
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• 2007

In this study, we investigated methods for p-type ZnO deposition as well as stability enhancement of its properties. The film was prepared by co-depositing AlAs and ZnO in a RF magnetron sputtering system. Property variation was monitored with photoluminescence and Hall measurements by stressing the films at $250^{\circ}C$ for various duration upto 144 hours. Results indicated that co-deposition is a useful method for p-type ZnO preparation. In particular, pre-treatment in 30% $H_2O_2$ for 1min was observed to be effective in reducing the property variation taking place during the subsequent high temperature processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.419-420
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• 2008

In this study, high quality (Al,N)-codoped p-type ZnO thin films were obtained by DC magnetron sputtering. The film on buffer layer grown in 80% $N_2$ ambient shows highest hole concentration of $2.93\times10^{17}cm^{-3}$. The films show hole concentration in the range of $1.5\times10^{15}$ to $2.93\times10^{17}cm^{-3}$, resistivity of 131.2 to 2.864 $\Omega$cm, mobility of 3.99 to 31.6 $cm^2V^{-1}s^{-1}$. The films on Si show easier p-doping in ZnO than those on buffer layer. The film on Si shows the highest quality of optical photoluminescence (PL) characteristics. The donor energy level $(E_d)$ of (Al,N)-codoped ZnO films is about 50 meV and acceptor energy level $(E_a)$ is in the range of 63 to 71 meV. It will help to improve p-type ZnO films.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.977-980
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• 2002

Using the micro-pulling down method, $Nd_2O_3$ doped crack-free stoichiometric $LiNbO_3$ single crystals were grown in 1 mm diameter and 30∼35 mm length. The homogeneous distributions of $Nd_2O_3$ concentration were confirmed by the electron probe micro analysis. The absorption and photoluminescence spectra were measured with respect to the $Nd_2O_3$ doping.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.212-215
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• 2016

In this paper, cerium doped lutetium pyrosilicate (LPS) powders with cerium content (0.05 and 0.07 mol%) were prepared by sol-gel process. The formation of lutetium pyrosilicate (LPS) phase was confirmed by XRD analysis for the powders heated at $1,200^{\circ}C$; in these powders, a single phase of $Lu_2Si_2O_7$ (LPS) was observed. Cerium doped lutetium pyrosilicate (LPS) powder was agglomerated and constituted of small spherical particles with diameters of about 300 nm. The photoluminescence spectra of the $Lu_2Si_2O_7:Ce^{3+}$ powders showed the characteristic of excitation and there was an emission spectrum for $Ce^{3+}$ in the host of $Lu_2Si_2O_7$. The emission spectrum shows a broad band in the range of 350-525 nm; the broad wavelength on the right side of the spectra should be ascribed to the same 5d-4f transitions of $Ce^{3+}$, as in the case of cerium doped $Lu_2Si_2O_7$ single crystals.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.612-617
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• 2007

Both photoluminescence and thermal characteristics for $SrAl_2O_4:Eu^{+2},\;Dy^{+3}$ phosphors synthesized with various aluminum compounds (${\alpha}-Al_2O_3$, ${\gamma}-Al_2O_3$, amorphous-$Al_2O_3$ and $Al(OH)_3)$ were investigated in this study. The formation temperature of the host $SrAl_2O_4$ crystal is changed by these various aluminum compounds, as a result of the different thermal decomposition temperature of $SrCO_3$ phase. Among these compounds, the amorphous-$Al_2O_3$ phase shows the lowest formation temperature of the host $SrAl_2O_4$ crystal. The PL emission and excitation spectra of $SrAl_2O_4:Eu^{+2},\;Dy^{+3}$ phosphor are not affected by these aluminum compounds. After the removal of the Xenon lamp excitation (360 nm), however, the excellent longphosphorescent property of the phosphor is obtained by the amorphous-$Al_2O_3$ phase, although the decay time for all phosphors decrease exponentially.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.92-95
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• 2014

In this work we have synthesized ZnS:Mn nanocrystals (NCs) using a simple one step thermochemical method. $Zn(NO_3)_2$ and $Na_2S_2O_3$ were used as the precursors and $Mn(NO_3)_2$ was the source of impurity. Thioglycolic acid (TGA) was used as the capping agent and the catalyst of the reaction. The structure and optical property of the NCs were characterized by means of X- ray diffraction (XRD), HRTEM, UV-visible optical spectroscopy and photoluminescence (PL). X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses demonstrated cubic phase ZnS:Mn NCs with an average size around 3 nm. Synthesized NCs exhibited band gap of about 4 eV. Photoluminescence spectra showed a yellow-orange emission with a peak located at 585 nm, demonstrating the Mn incorporation inside the ZnS particles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.125-128
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• 2000

ZnO thin films on silicon substrates have been deposited by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the effect of oxygen post-annealing treatment on the property of ZnO thin films, deposited film has been annealed at the substrate temperature of $440^{\circ}C$. After post-annealing treatment in the oxygen ambient, the stoichiometry of ZnO film has been characterized be improved which results in higher UV emission intensity of photoluminescence.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.29-32
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• 2001

Hydrogen passivation of Si nanocrystals identifies luminescence mechanism indirectly. Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser After deposition, Si nanocrystallites thin films have been annealed at 600$^{\circ}C$ and 760$^{\circ}C$ in nitrogen ambient, respectively. Hydrogen passivation was subsequently performed at 500$^{\circ}C$ in forming gas (95 % N$_2$ + 5 % H$_2$) for an 1 hour. We report the photoluminescnece(PL) property of Si thin films by the hydrogen passivation. The luminescence mechanism of Si nanocrystallites has also been investigated.