• Title/Summary/Keyword: Photoluminescence properties

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Point Defects and Photoluminescence of Green Phosphors Ca(1-1.5x)WO4:Tbx3+ and Ca(1-2x)WO4:Tbx3+, Nax+

  • Cho, Seon-Woog
    • Korean Journal of Materials Research
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    • v.23 no.9
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    • pp.537-542
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    • 2013
  • Two types of Tb- and Na-substituted green phosphors $Ca_{(1-1.5x)}WO_4:Tb_x^{3+}$: and $Ca_{(1-2x)}WO_4:Tb_x^{3+},Na_x^+$ were synthesized with various x values, using a solid-state reaction. The former phosphors contained both substitutional and vacancy point defects, while the later had only substitutional defects. X-ray diffraction results showed that the main diffraction peak, (112), was centered at $2{\theta}=28.72^{\circ}$ and indicated that there was no basic structural deformation caused by substitutions or vacancies. The photoluminescence emission and photoluminescence excitation spectra revealed the optical properties of trivalent terbium ions, $Tb^{3+}$. Typical transitions, $^5D_3{\rightarrow}^7F_6,\;^7F_5,\;^7F_4$ and $^5D_4{\rightarrow}^7F_6,\;^7F_5,\;^7F_4,\;^7F_3$, and cross relaxations were observed. Subtle differences in the photoluminescence of green phosphors were observed as a result of the point defects. The FT-IR spectra indicated that some of the ungerade vibrational modes had shifted positions and changed shapes, spreading out over a wide range of frequencies. This change can be attributed to the different masses of $Tb^{3+}$ and $Na^+$ ions and $V_{Ca}$" vacancies compared to $Ca^{2+}$ ions. The gerade normal modes of the Raman spectra exhibited subtle differences resulting from point defects in $Ca_{(1-1.5x)}Tb_xWO_4$ and $Ca_{(1-2x)}Tb_xNa_xWO_4$.

Synthesis and Photoluminescence of the Sr1-xBaxAl2O4:Eu2+, Dy3+ Long Phosphorescence Phosphor (Sr1-xBaxAl2O4:Eu2+, Dy3+계 축광성 형광체의 합성과 그의 발광특성)

  • Park, Jin-Woo;Kim, Jung-Sik
    • Journal of the Korean Ceramic Society
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    • v.43 no.6 s.289
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    • pp.333-337
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    • 2006
  • In this study, the $Sr_{1-x}Ba_{x}Al_{2}O_{4}:Eu^{2+},Dy^{3+}$ phosphor were prepared by the solid-state reaction method and its photoluminescence properties were investigated. Starting powders of $SrCO_3,\;BaCO_3,\;and\;Al_{2}O_3$ were mixed with $Eu_{2}O_3$ as activator, $Dy_{2}O_3$ as co-activator and $B_{2}O_3$ as flux. Then, the mixed powders were heated at the temperature of $1100{\sim}1400^{\circ}C$ for 3 h under the reducing ambient atmosphere of $95%Ar+5%H_2$. The effect of Ba addition from 0.0 to 1.0 mol on photoluminescence was investigated. As the amount of Ba increased, the intensity of emission increased and the optimum long phosphorescence occurred at the amount of 0.1 mol Ba. The optimum sintering condition for long phosphorescent phosphor of $Sr_{1-x}Ba_{x}Al_{2}O_{4}:Eu^{2+},Dy^{3+}$($x=0{\sim}1.0mol$) was found at $1400^{\circ}C$. The excitation spectra showed a broad band of $250{\sim}450nm$ with maximum peak at 360 nm. The maximum peak intensity of emission spectra occurred at the range of $480{\sim}520nm$, depending on Ba content.

Influences of Spinodal Decomposition of InGaAsP Layer on Photoluminescence Characteristics (InGaAsP 에피막의 Spinodal분해 조직구조가 Photoluminescence 특성에 미치는 영향)

  • Lee, Jong-Won
    • Korean Journal of Materials Research
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    • v.5 no.8
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    • pp.936-944
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    • 1995
  • The effects of Spinodal decomposition induced phase separated microstructure of InGaAsP/InP heterostructure on photoluminescence(PL) intensity and FWHM(full-width at half maximum) were investigated in this study. Lattice mismatches were measured by double crystal x-ray diffractometer, and the microstructures of phase separated InGaAsP were observed by transmission electron microscopy. It was found that the misfit stress calculated from lattice mismatch was related to the periodicity of Spinodal modulation. Strong dependence of PL intensity and FWHM on the modulation periodicity was also found. For systematic understanding of these observations, the interaction elastic strain energy function induced by misfit stress was proposed. The calculation illustrated that the microstructure of the epilayer such as Spinodal decomposition played an important role in determining the optoelectronic properties such as PL intensity and PL FWHM.

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Synthesis and Photoluminescence Properties of Heteroleptic 9-Arylated Carbazole Iridium(III) Complexes (9-Arylated Carbazole을 주리간드로 사용하는 Heteroleptic Iridium(III) 착물의 합성과 분광학적 특성)

  • Oh, Se Hwan;Yum, Eul Kgun;Kim, Younghoon;Im, Yung-Jae;Heo, Jungseok;Kim, Yeong-Joon
    • Applied Chemistry for Engineering
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    • v.32 no.2
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    • pp.180-189
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    • 2021
  • N-Heteroaryl carbazoles were synthesized with thermal heating in the presence of Cu(I) catalyst and used as main ligands for the preparation of heteroleptic Ir(III) complexes. In these Ir(III) complexes, 6-membered ring structures of Ir-ligand chelation were found by single crystal X-ray diffraction. The blue shift of photoluminescence for Ir(III) complexes was observed in the case of the strong bond formation between Ir and ancillary ligands. It also has been clearly shown that the higher electron density of heteroaryl aromatic ring influenced shorter maximum photoluminescence wavelength (λmax) of Ir(III) complexes. Since the new Ir(III) complexes showed good phosphorescent emission, they could be potentially used as OLED materials in the emission Layer.

Synthesis and EL Properties of Blue Light-emitting Poly(arylenevinylene)s

  • Hwang, Do-Hoon
    • Journal of Information Display
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    • v.3 no.1
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    • pp.1-5
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    • 2002
  • A series of fully conjugated polymers containing new arylenevinylene units were synthesized and their light-emitting properties were investigated. A bisphosphonate containing tetraphenyl group was made to react with three different dialdehyde monomers to produce fully conjugated alternating copolymers. The photoluminescence (PL) and the electroluminescence (EL) peak wavelengths of the polymers were varied from 500 nm to 460 nm depending on the polymer structure. Single layer EL devices using the polymers as an emissive layer have been fabricated. The single layer EL devices became visible between 12-22 V and emitted blue light.

Luminescence Properties of Red Phosphor Gd2-x-yLixEuyO3 (적색 형광체 Gd2-x-yLixEuyO3의 발광 특성)

  • 조신호;변송호;김동국;박중철
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.3
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    • pp.258-263
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    • 2002
  • We present a new toed phosphor, $Gd_{2-x-y}Li_xEu_yO_3$ with superior luminescent Properties compared to the commercially available red phosphor $Y_2O_3:Eu^{3+}$. The phosphor, with a diameter of about $2\mu\textrm{m}$, consists of the psedospherical particles in a regular array. The photoluminescence measurements as a function of the laser power and the Eu mole fraction were performed at zoom temperature The luminescence intensity linearly increases as both the laser power and the Eu mole fraction Increase. As for the dependence on cathodoluminescence, the incorporation of Eu and Li ions into $Gd_2O_3$ lattice brings about an increase in luminescent efficiency. The highest emission intensity for the phosphor occurs at the applied voltage of 500 V, its value is larger than that of $Y_2O_3:Eu^{3+}$ powder by 70%.

Synthesis and Characterization of Y2O3:Eu Fine Particle

  • Park, Ji-Koon;Kang, Sang-Sik;Kwak, Min-Gi;Choi, Seung-Suk;Kim, Jae-Hyung;Nam, Sang-Hee
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.4
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    • pp.169-172
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    • 2005
  • [ $Y_2O_3:Eu$ ] powder was synthesized using a solution-combustion method by dissolving $(CH_3CO_2)_3Y$ and $(CH_3CO_2)_3$ Eu in methyl-alcohol solution. Results from X-ray diffractometery (XRD), thermogravimetry (TG)-differential thermal analysis (DTA) show that $Y_2O_3:Eu$ crystallizes completely when the dry powder is sintered at $500^{\circ}C$. The investigated optical properties were the photoluminescence emission spectra, the excitation spectra and luminescence decay curve. Europium (Eu) concentration had no observable effect on the optical spectrum which depended on the emission intensity. The mean lifetime of synthesized phosphors was $2.3\~2.6 ms$.

Synthesis of Lu2.94Ce0.06MgAl3SiO12 phosphor and its photoluminescent properties

  • Lee, Jung-Il;Kim, Tae Wan;Shin, Ji Young;Ryu, Jeong Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.25 no.3
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    • pp.121-126
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    • 2015
  • A novel $Ce^{3+}$ doped $Lu_3MgAl_3SiO_{12}$ phosphor ($Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$) was successfully synthesized by a conventional solid-state reaction at $1450^{\circ}C$ for 5 h. The crystal structure of the synthesized phosphor powder was characterized by X-ray diffraction and Rietveld refinement. The prepared phosphor powder showed a broad peak at 550 nm, and the temperature dependence on photoluminescence properties of the prepared $Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$ phosphor was investigated from 300 to 525 K. The activation energy for thermal quenching was determined by Arrhenius fitting. The experimental results clearly indicate that prepared $Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$ phosphor has great potential for a down-conversion yellow phosphor in white light-emitting diodes.

Photoluminescence Properties of $Eu^{3+}-Activated\;YCa_3(GaO)_3(BO_3)_4$ phosphor

  • Lee, Dae-Won;Kwak, Chung-Heop;Jung, Ha-Kyun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1360-1363
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    • 2006
  • A borate compound was adopted as new host material for $EU^{3+}$ activator. The $Eu^{3+}-doped\;YCa_3(GaO)_3(BO_3)_4$ (YCGB) phosphors were successfully synthesized. Also, their photoluminescence properties under the excitation of UV ray were measured. In the XRD patterns of the synthesized powders, most peaks were well-matched to a gaudefroyite phase. The emission of $Eu^{3+}$ in YCGB consists of a strong peak centered at 622 nm, which is attributed to $^5D_O-^7F_2$ transition of $Eu^{3+}$ and several weak peaks at near the wavelength. Optimum $Eu^{3+}$ concentration of the red phosphor under the excitation with the wavelength of 395 nm was about 75 mol%. This indicates that the red phosphor has a relatively higher critical concentration than that of the other $Eu^{3+}-doped$ phosphors. The dominant interaction character of $Eu^{3+}$ might be dipole-dipole interaction.

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Optical Properties of Er-implanted GaN (Er 이온 주입된 GaN의 광학적 특성)

  • Son, Chang-Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.12
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    • pp.1101-1105
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    • 2005
  • We have investigated the optical properties of Erbium (Er)-implanted GaN by photoluminescence (PL). Various doses of Er ion were implanted on GaN epilayers by ion implantation. Visible green emission lines due to inner 4f shell transitions for $Er^{3+}$ were observed from the PL spectrum of Er-implanted GaN. The emission spectrum consists of two narrow green lines at 537 and 558 nm. The green emission lines are identified as $Er^{3+}$ transitions from the $^{5}H_{11/2}$ and $^{4}S_{3/2}$ levels to the $^{4}I_{15/2}$ ground state. The stronger peaks in the case with the dose of $5{\times}10^{14}cm^{-2}$, together with the relatively higher intensity of the $Er^{3+}$ luminescence in the lower doped sample. It implies that some damage remains in the case with the dose of $1{\times}10^{16}cm^{-2}$. The peak positions of emission lines due to inner 4f shell transitions for $Er^{3+}$ do not change with increasing temperature. It indicates that $Er^{3+}$ related emission depends very little on the ambient temperature.