• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.143-144
• /
• 2010

3-5족 화합물 반도체를 이용한 집광형 삼중 접합 태양전지는 40% 이상의 광변환 효율로 많은 주목을 받고 있다[1]. 삼중 접합 태양전지의 하부 셀은 기계적 강도가 높고 장파장을 흡수할 수 있는 Ge이 사용된다. Ge위에 성장될 III-V족 단결정막으로서 Ge과 격자상수가 일치하는 GaInP나 GaAs가 적합하고, 성장 중 V족 원소의 열확산으로 인해 Ge과 pn접합을 형성하게 된다. 이때 GaInP의 P의 경우 GaAs의 As보다 확산계수가 낮아 태양전지 변환효율향상에 유리한 얇은 접합 형성이 가능하고, 표면 에칭효과가 적기 때문에 GaInP를 단결정막으로 선택하여 p-type Ge기판 위 성장으로 단일접합 Ge구조 제작이 가능하다. 하지만 이종접합 구조 성장으로 인해 발생한 계면사이의 전위나 미세결함들이 결정막내부에 존재하게 되며 이러한 결함들은 광학소자 응용 시 비발광 센터로 작용할 뿐 아니라 소자의 누설전류를 증가시키는 원인으로 작용하여 태양전지 변환효율을 감소시키게 된다. 이에 결함감소를 통해 소자의 전기적 특성을 향상시키고자 수소 열처리나 플라즈마 공정을 통해 수소 원자를 박막내부로 확산시키고, 계면이나 박막 내 결함들과 결합시킴으로서 결함들의 비활성화를 유도하는 연구가 많이 진행되어 왔다 [2][3]. 하지만, 격자불일치를 갖는 GaInP/Ge 구조에 대한 수소 열처리 및 불순물 준위의 거동에 대한 연구는 많이 진행되어 있지 않다. 따라서 본 연구에서는 Ga0.45In0.55P/Ge구조에 수소 열처리 공정을 적용을 통하여 단결정막 내부 및 계면에서의 결함밀도를 제어하고 이를 통해 태양 전지의 변환효율을 향상시키고자 한다. <111> 방향으로 $6^{\circ}C$기울어진 p-type Ge(100) 기판 위에 유기금속화학증착법 (MOCVD)을 통해 Si이 도핑된 200 nm의 n-type GaInP층을 성장하여 Ge과 단일접합 n-p 구조를 제작하였다. 제작된 GaInP/Ge구조를 furnace에서 250도에서 90~150분간 시간변화를 주어 수소열처리 공정을 진행하였다. 저온 photoluminescence를 통해 GaInP층의 광학적 특성 변화를 관찰한 결과, 1.872 eV에서 free-exciton peak과 1.761 eV에서 Si 도펀트 saturation에 의해 발생된 D-A (Donor to Acceptor)천이로 판단되는 peak을 검출할 수 있었다. 수소 열처리 시간이 증가함에 따라 free-exciton peak 세기 증가와 반가폭 감소를 확인하였고, D-A peak이 사라지는 것을 관찰할 수 있었다. 이러한 결과는 수소 열처리에 따른 단결정막 내부의 수소원자들이 얕은 불순물(shallow impurity) 들로 작용하는 도펀트들이나, 깊은 준위결함(deep level defect)으로 작용하는 계면근처의 전위, 미세결함들과의 결합으로 결함 비활성화를 야기해 발광세기와 결정질 향상효과를 보인 것으로 판단된다. 본 발표에서는 상술한 결과를 바탕으로 한 수소 열처리를 통한 박막 및 계면에서의 결함준위의 거동에 대한 광분석 결과가 논의될 것이다.

• Journal of the Korean Vacuum Society
• /
• v.6 no.1
• /
• pp.61-68
• /
• 1997

We examined the dependence of the growth of undoped InP epilayer by chloride vapor phase epitaxy on the growth temperature and on the $PCl_3$molar fraction. The growth temperature was varied from $620^{\circ}C$ to $650^{\circ}C$ and the $PCl_3$molar franction from $2.5{\times}10^{-2}$ to $4.5{\times}10^{-2}$. The undoped InP epilayer with hillock free surface was obtained at the growth temperature of $640^{\circ}C$ and at the PCl$_3$molar fraction of $3.0{\times}10^{-2}$. The surface morphology was improved with a decrease of the PCl$_3$molar fraction. The carrier concentration measured by Hall and ECV was less than $1{\times}10^{14}cm^{-3}$. The resistivity of the undoped InP epilayer, measured by using four probe method, showed a high value of <$3.0{\times}10^6{\Omega}\textrm{cm}$.

• Journal of the Korean institute of surface engineering
• /
• v.50 no.4
• /
• pp.282-288
• /
• 2017

$Eu^{3+}$- or $Sm^{3+}$-doped $La_2MoO_6$ phosphors were synthesized with different concentrations of activator ions via a solid-state reaction. The X-ray diffraction patterns exhibited that crystalline structures of all the phosphors were tetragonal systems with the dominant peak occurring at (103) plane, irrespective of the concentration and the type of activator ions. The crystallites showed the pebble-like crystalline shapes and the average crystallite size increased with a tendency to agglomerate as the concentration of $Eu^{3+}$ ions increased. The excitation spectra of $Eu^{3+}$-doped $La_2MoO_6$ phosphors contained an intense charge transfer band centered at 331 nm in the range of 250-370 nm and three weak peaks at 381, 394, and 415 nm, respectively, due to the $^7F_0{\rightarrow}^5L_7$, $^7F_0{\rightarrow}^5L_6$, and $^7F_0{\rightarrow}^5D_3$ transitions of $Eu^{3+}$ ions. The emission spectra under excitation at 331 nm exhibited a strong red band centered at 620 nm and two weak bands at 593 and 704 nm. As the concentration of $Eu^{3+}$ increased from 1 to 20 mol%, the intensities of all the emission bands gradually increased. For the $Sm^{3+}$-doped $La_2MoO_6$ phosphors, the emission spectra consisted of an intense emission band at 607 nm arising from the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ transition and three relatively small bands at 565, 648, and 707 nm originating from the $^4G_{5/2}{\rightarrow}^6H_{5/2}$, $^4G_{5/2}{\rightarrow}^6H_{9/2}$, and $^4G_{5/2}{\rightarrow}^6H_{11/2}$ transitions of $Sm^{3+}$, respectively. The intensities of all the emission bands approached maxima when concentration of $Sm^{3+}$ ions was 5 mol%. These results indicate that the optimum concentrations for highly-luminescent red and orange emission are 20 mol% of $Eu^{3+}$ and 5 mol% of $Sm^{3+}$ ions, respectively.

• Korean Chemical Engineering Research
• /
• v.40 no.6
• /
• pp.752-756
• /
• 2002

Green-emitting $Zn_2SiO_4:Mn$ phosphors for PDP(Plasma Display Panel) application were synthesized by colloidal seed-assisted spray pyrolysis process. The codoping with $Gd^{3+}/Li^+$, which replaces $Si^{4+}$ site in the willemite structure, was performed to improve the luminous properties of the $Zn_2SiO_4:Mn$ phosphors. The particles prepared by spray pyrolysis process using fumed silica colloidal solution had a spherical shape, small particle size, narrow size distribution, and non-aggregation characteristics. The $Gd^{3+}/Li^+$ codoping amount affected the luminous characteristics of $Zn_2SiO_4:Mn$ phosphors. The codoping with proper amounts of $Gd^{3+}/Li^+$ improved both the photoluminescence efficiency and decay time of $Zn_2SiO_4:Mn$ phosphor particles. In spray pyrolysis, the post-treatment temperature is another factor controlling the luminous performance of $Zn_2SiO_4:Mn$ phosphors. The $Zn_{1.9}SiO_4:Mn_{0.1}$ phosphor particles containing 0.1 mol% $Gd^{3+}/Li^+$ co-dopant had a 5% higher PL intensity than the commercial product and 5.7 ms decay time after post-treatment at $1,145^{\circ}C$.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.4
• /
• pp.1169-1176
• /
• 2014

In this study, water-dispersible ZnS:Mn nanocrystals were synthesized by capping the surface with conventional and simple structured amino acid ligands: $\small{L}$-Glycine and $\small{L}$-Alanine. The ZnS:Mn-Gly and ZnS:Mn-Ala nanocrystal powders were characterized by XRD, HR-TEM, EDXS, ICP-AES, and FT-IR spectroscopy. The optical properties were measured by UV-Visible and photoluminescence (PL) spectroscopy. The PL spectra for the ZnS:Mn-Gly and ZnS:Mn-Ala showed broad emission peaks at 599 nm and 607 nm with PL efficiencies of 6.5% and 7.8%, respectively. The measured average particle size from the HR-TEM images were $6.4{\pm}0.8$ nm (ZnS:Mn-Gly) and $4.1{\pm}0.5$ nm (ZnS:Mn-Ala), which were also supported by Debye-Scherrer calculations. In addition, the degree of aggregation of the nanocrystals in aqueous solutions were measured by a hydrodynamic light scattering method, which showed formation of sub-micrometer size aggregates for both ZnS:Mn-Gly ($273{\pm}94$ nm) and ZnS:Mn-Ala ($233{\pm}34$ nm) in water due to the intermolecular attraction between the capping amino acids molecules. Finally, the cytotoxic effects of ZnS:Mn-Gly and ZnS:Mn-Ala nanocrsystals over the growth of wild type E. coli were investigated. As a result, no toxicity was shown for the ZnS:Mn-Gly nanocrystal in the colloidal concentration region from 1 ${\mu}g/mL$ to 1000 ${\mu}g/mL$, while ZnS:Mn-Ala showed significant toxicity at 100 ${\mu}g/mL$.

• Korean Journal of Materials Research
• /
• v.8 no.8
• /
• pp.737-743
• /
• 1998

The synthesis of $SrAI_2O_4:Eu^{2+}$ phosphor and its properties of both photoluminescence and long-phosphorescent were investigated as a function of sintering condition. Single phase of $SrAl_2O_4$ was obtained by sintering the mixtures of $SrCO_3$, $Eu_2O_3$, $AI_2O_34 and 3wt% $B_2O_3$ powders over 100$0^{\circ}C$ in Ar/H2 atmosphere. The optimum sintering condition for the long-phosphorescent phosphor of $SrAI_2O_4:Eu^{2+}$ was found at 130$0^{\circ}C$ for 3hours. The PL emission spectrum of $SrAI_2O_4:Eu^{2+}$ shows a maximum peak intensity at 520nm(2.384eV) with a broad emission extending from 450 to 650nm which resulted from the $4f^65d^1$$\rightarrow$$4f^7$ transition of $Eu^{+2}$ under 360nm exitation. Monitored at 520nm. the excita¬tion spectrum of $SrAI_2O_4:Eu^{2+}$ exhibits a maximum peak intensity at 360nm (3.44eV) with a broad absorption band extending from 250 to 480nm.

• Journal of Sensor Science and Technology
• /
• v.24 no.6
• /
• pp.404-411
• /
• 2015

A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.173-173
• /
• 2010

Recently, a patterned sapphire substrate (PSS) has been intensively used as one of the effective ways to reduce the dislocation density for the III-nitride epitaxial layers aiming for the application of high-performance, especially high-brightness, light-emitting diodes (LEDs). In this paper, we analyze the growth kinetics of the atoms and crystalline quality for the undopped-GaN depending on the facets of the pattern fabricated on a sapphire substrate. The effects of the PSS on the device characteristics of InGaN/GaN LEDs were also investigated. Several GaN samples were grown on the PSS under the different growth conditions. And the undoped-GaN layer was grown on a planar sapphire substrate as a reference. For the (002) plane of the undoped-GaN layer, as an example, the line-width broadening of the x-ray diffraction (XRD) spectrum on a planar sapphire substrate is 216.0 arcsec which is significantly narrower than that of 277.2 arcsec for the PSS. However, the line-width broadening for the (102) plane on the planar sapphire substrate (363.6 arcsec) is larger than that for the PSS (309.6 arcsec). Even though the growth parameters such as growth temperature, growth time, and pressure were systematically changed, this kind of trend in the line-width broadening of XRD spectrum was similar. The emission wavelength of the undoped-GaN layer on the PSS was red-shifted by 5.7 nm from that of the conventional LEDs (364.1 nm) under the same growth conditions. In addition, the intensity for the GaN layer on the PSS was three times larger than that of the planar case. The spatial variation in the emission wavelength of the undoped-GaN layer on the PSS was statistically ${\pm}0.5\;nm$ obtained from the photoluminescence mapping results throughout the whole wafer. These results will be discussed in terms of the mixed dislocation depending on the facets and the period of the patterns.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.159-159
• /
• 2010

본 논문은 테라헤르츠 소스로 저온 InGaAs를 대체하기 위한 저온 $In_{0.64}Al_{0.36}Sb$의 실리콘(Si) 도핑 농도에 따른 광학적 특성 변화를 photoluminescence (PL)과 time-resolved PL (TRPL) 측정을 이용하여 분석하였다. $In_{0.64}Al_{0.36}Sb$ 시료는 분자선 엑피탁시 (molecular beam epitaxy)법으로 GaAs 기판 위에 약 $420^{\circ}C$에서 $3.7\;{\mu}m$ 두께 성장하였다. Si은 $In_{0.64}Al_{0.36}Sb$ 시료에서 도핑 농도가 낮을 때는 어셉터(acceptor)로 작용하다가 도핑 농도가 증가함에 따라 도너(donor)로 작용하였다. 본 연구에 사용한 $In_{0.64}Al_{0.36}Sb$ 시료의 Si 도핑 농도는 $4.5{\times}10^{16}\;cm^{-3}$ (n형), $4{\times}10^{16}\;cm^{-3}$ (n형), $8{\times}10^{15}\;cm^{-3}$ (n형), $1{\times}10^{15}\;cm^{-3}$ (p형), $4{\times}10^{14}\;cm^{-3}$ (p형)인 다섯 개의 시료를 사용하였다. Si 도핑한 시료의 PL 피크는 undoped 시료보다 약 100-200 nm 단파장에서 나타나고 PL 세기도 크게 증가하였다. 그러나 Si 도핑 농도가 가장 낮은 n형과 p형 시료의 PL 피크가 가장 짧은 파장 (높은 에너지)에 나타나고 도핑 농도가 증가함에 따라 장파장으로 이동함을 보였다. n형 시료의 도핑 농도가 $8{\times}10^{15}\;cm^{-3}$에서 $4.5{\times}10^{16}\;cm^{-3}$로 증가하였을 때 PL 피크는 1232 nm에서 1288 nm까지 장파장쪽으로 이동하였으며, p형 시료는 도핑 농도가 $4{\times}10^{14}\;cm^{-3}$에서 $1{\times}10^{15}\;cm^{-3}$로 증가하였을 때 PL 피크가 1248 nm에서 1314 nm로 이동함을 보였다. 또한 시료 온도에 따른 PL 결과는 온도가 증가함에 따라 PL 피크는 장파장으로 이동하면서 PL 세기는 급격하게 감소하고 약 100 - 150 K에서 소멸하였다. 그러나 ~1500 nm 이상 장파장 영역에 매우 넓은 새로운 피크가 나타났으며 온도가 증가함에 따라 PL 세기가 증가함을 확인하였다. Si 도핑 농도에 따른 운반자 수명시간 변화를 TRPL을 이용하여 측정하였다. 운반자 수명시간은 double exponential function을 이용하여 얻었다. Si 도핑 시료의 운반자 수명시간이 undoped 시료에 비해 매우 길게 나타났으며, Si 도핑 시료에서는 p형 시료들보다 n형 시료들의 운반자 수명시간이 길게 나타났다. PL 방출파장에 따른 운반자 수명시간은 Si 도핑 농도에 따라 다르게 나타났다. 이러한 PL과 TRPL 결과로부터 $In_{0.64}Al_{0.36}Sb$의 발광 특성 및 운반자 동역학은 Si 도핑에 크게 영향을 받는다는 것을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.121-121
• /
• 2010

ZnO is a promising material for the application of high efficiency light emitting diodes with short wavelength region for its large bandgap energy of 3.37 eV which is similar to GaN (3.39 eV) at room temperature. The large exciton binding energy of 60 meV in ZnO provide provides higher efficiency of emission for optoelectronic device applications. Several ZnO/ZnMgO multiple quantum well (MQW) structures have been grown on various substrates such as sapphire, GaN, Si, and so on. However, the achievement of high quality ZnO/ZnMgO MQW structures has been somehow limited by the use of lattice-mismatched substrates. Therefore, we propose the optical properties of ZnO/ZnMgO multiple quantum well (MQW) structures with different well widths grown on lattice-matched ZnO substrates by molecular beam epitaxy. Photoluminescence (PL) spectra show MQW emissions at 3.387 and 3.369 eV for the ZnO/ZnMgO MQW samples with well widths of 2 and 5 nm, respectively, due to the quantum confinement effect. Time-resolved PL results show an efficient photo-generated carrier transfer from the barrier to the MQWs, which leads to an increased intensity ratio of the well to barrier emissions for the ZnO/ZnMgO MQW sample with the wider width. From the power-dependent PL spectra, we observed no PL peak shift of MQW emission in both samples, indicating a negligible built-in electric field effect in the ZnO/$Zn_{0.9}Mg_{0.1}O$ MQWs grown on lattice-matched ZnO substrates.