• Bulletin of the Korean Chemical Society
• /
• v.31 no.10
• /
• pp.2992-2994
• /
• 2010

• Bulletin of the Korean Chemical Society
• /
• v.21 no.3
• /
• pp.295-299
• /
• 2000

The photoluminescence and cathodoluminescence of $SrGa_2S_4:EU$ phosphor were optimized with the process and chemical variables (activators, fluxes and reaction temperature) used in solid state reaction. Firing the powder with flux at $800^{\circ}C$ for 2hr gave the highest photoluminescence efficiency under near-UV excitation and the highest cathodoluminescence efficiency of 20.1 lm/W at 2 kV and 33.3 lm/W at 10 kV. The suitability of $SrGa_2S_4:EU$ for application as a phosphor in LCDs and FEDs is discussed.

• Bulletin of the Korean Chemical Society
• /
• v.27 no.6
• /
• pp.841-846
• /
• 2006

$Y_2O_2S$:Eu phosphors were synthesized via solid-state reactions. $Y_2O_2S$:Eu phosphor particles of various sizes were obtained by varying the firing temperature and firing time. The photoluminescence properties of these $Y_2O_2S$:Eu phosphors were examined. In addition, the cathodoluminescence properties of the $Y_2O_2S$:Eu phosphors were examined for applied voltages of 3-8 kV. The relationship between the luminescence intensity and particle size of the$Y_2O_2S$:Eu phosphors was investigated. The photoluminescence and cathodoluminescence of the $Y_2O_2S$:Eu phosphors are affected differently by variations in particle size.

• Applied Science and Convergence Technology
• /
• v.24 no.4
• /
• pp.111-116
• /
• 2015

The graphene oxide (GO) and graphene oxide quantum dots (GOQDs), which have gained research interest as new types of light-emitting materials, were synthesized by the modified Hummers method for oxidation of graphite flake and graphite nanoparticle. The optical properties of GO and GOQDs have been compared by mean of photoluminescence (PL), PL excitation (PLE), UV-vis absorbance, and time-resolved PL. The GO have an absorption peak at 229 nm and shoulder part at 310 nm, whereas the GOQDs show broad absorption with a gradual change up without any absorption peaks. The PL emission of GOQDs and GO showed the green color at 520 nm and the red color at 690 nm, respectively. The red emission of GO showed faster PL decay time than the green emission of GOQDs. In particular, the temporal PL profile of the GO showed redshift from 560 nm to 660 nm after the pump event.

• Journal of the Korean Ceramic Society
• /
• v.53 no.4
• /
• pp.381-385
• /
• 2016

Recently, white LEDs, especially, warm white LEDs have been intensively investigated due to outstanding optical properties, long term stability and low power consumption. In this study, mixed type and patterned type of remote phosphors were prepared by screen printing process employing green and red phosphor. Each type of remote phosphor exhibited distinctive photoluminescence spectrum. For example, the mixed type of remote phosphor exhibited unique spectrum, while the patterned type showed expectable spectrum depending on the concentration of phosphors. This indicates that a small amount of red phosphor dramatically reduced the green photoluminescence in the case of mixed-type remote phosphor, whereas the effect was negligible in the patterned-type remote phosphor. The possibility of undesirable chemical reaction was further investigated by using scanning electron microscopy and X-ray diffraction.

• Applied Science and Convergence Technology
• /
• v.24 no.1
• /
• pp.22-26
• /
• 2015

The optical properties of InP/GaP short-period superlattice (SPS) structures grown at various temperatures from $400^{\circ}C$ to $490^{\circ}C$ have been investigated by using temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL measurements. The PL peak energy for SPS samples decreases as the growth temperature increases. The decreased PL energy of ~10 meV for the sample grown at $425^{\circ}C$ compared to that for $400^{\circ}C$-grown sample is due to the CuPt-B type ordering, while the SPS samples grown at $460^{\circ}C$ and $490^{\circ}C$ exhibit the significant reduction of the PL peak energies due to the combined effects of the formation of lateral composition modulation (LCM) and CuPt-B type ordering. The SPS samples with LCM structure show the enhanced carrier lifetime due to the spatial separation of carriers. This study represents that the bandgap energy of InP/GaP SPS structures can be controlled by varying growth temperature, leading to LCM formation and CuPt-B type ordering.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1565-1568
• /
• 2007

A borate compound was adopted as new host material for $Eu^{3+}$, $Tb^{3+}$ and $Tm^{3+}$ activators. The phosphor samples, $Gd_{1-x}Eu_xCa_3(GaO)_3(BO_3)_4$, $Gd_{1-x}Tb_xCa_3(GaO)_3(BO3)_4$ and $Gd_{1-x}Tm_xCa_3(GaO)_3(BO_3)_4$ have been synthesized by conventional solid-state reaction. The crystalline phase for the resulting powders was identified using an X-ray diffraction $system^1$. Their photoluminescence properties under the excitation of UV ray were investigated. The Eu, Tb or Tm-doped $GdCa_3(GaO)_3(BO_3)_4$ emits efficient red, green or blue light, respectively. It was observed that the optimum concentration of Eu or Tb activator for the borate host was much higher than other $Eu^{3+}$ or $Tb^{3+}-doped$ phosphors.

• Applied Science and Convergence Technology
• /
• v.24 no.3
• /
• pp.67-71
• /
• 2015

InP/InGaP quantum structures (QSs) were grown on GaAs (001) substrates by a migration-enhanced molecular beam epitaxy method. Temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL (TRPL) were performed to investigate the optical properties of InP/InGaP QSs as a function of migration enhanced epitaxy (MEE) growth cycles from 2 to 8. One cycle for the growth of InP QS consists of 2-s In and 2-s P supply with an interruption time of 10 s after each source supply. As the MEE growth cycle increases from 2 to 8, the PL peak is redshifted and exhibited different (larger, comparable, or smaller) bandgap shrinkages with increasing temperature compared to that of bulk InP. The PL decay becomes faster with increasing MEE cycles while the PL decay time increases with increasing emission wavelength. These PL and TRPL results are attributed to the different QS density and size/shape caused by the MEE repetition cycles. Therefore, the size and density of InP QSs can be controlled by changing the MEE growth cycles.

• Journal of the Microelectronics and Packaging Society
• /
• v.23 no.4
• /
• pp.63-67
• /
• 2016

Divalent europium-activated $Ca_2PO_4Cl$ phosphor powders were prepared by a chemical synthetic method followed by heat treatment in reduced atmosphere, and the crystal structures, morphologies and photoluminescence properties of the powders were investigated by x-ray powder diffraction, scanning electron microscope and spectrometer. The effect of Ca/P mole ratio at the starting materials on the final products was evaluated. The optimized synthesis condition obtained in this study was Ca/P mole ratio of 2.0. The present phosphor materials had higher photoluminescence intensity and better color purity than the commercial blue phosphor powders, $(Ca,Ba,Sr)_{10}(PO_4)_6Cl_2:Eu^{2+}$. The result of excitation spectrum measurement indicated that the excitation efficiency of the synthesized powders was higher for the long-wavelength UV region than that of the commercial phosphor. It was thus concluded that the samples prepared in this study can be successfully applied for the light-emitting devices such as LED excited with long-wavelength UV light sources.

• Analytical Science and Technology
• /
• v.27 no.6
• /
• pp.314-320
• /
• 2014

$La_{2-x}(MoO_4)_3:Er^{3+}/Yb^{3+}$ particles with doping concentrations of $Er^{3+}$ and $Yb^{3+}$ ($x=Er^{3+}+Yb^{3+}$, $Er^{3+}$=0.05, 0.1, 0.2 and $Yb^{3+}$ = 0.2, 0.45) were successfully prepared by the microwave-modified sol-gel method, and the upconversion photoluminescence properties were investigated. Well-crystallized particles, formed after heat-treatment at $900^{\circ}C$ for 16 h, showed a fine and homogeneous morphology with particle sizes of $2-5{\mu}m$. Under excitation at 980 nm, $La_{1.7}(MoO_4)_3:Er_{0.1}Yb_{0.2}$ and $La_{1.5}(MoO_4)_3:Er_{0.05}Yb_{0.45}$ particles exhibited a strong 525 nm emission band, a weak 550 nm emission band in the green region, and a very weak 655 nm emission band in the red region. The Raman spectra of the doped particles indicated the presence of strong peaks at higher frequencies of 752, 846, 922, 1358 and $1435cm^{-1}$ and lower frequency of $314cm^{-1}$ induced by the disorder of the $[MoO_4]^{2-}$ groups with the incorporation of the $Er^{3+}$ and $Yb^{3+}$ elements into the crystal lattice or by a new phase formation.