• Progress in Medical Physics
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• v.33 no.2
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• pp.11-24
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• 2022

X-ray detection has widely been applied in medical diagnostics, security screening, nondestructive testing in the industry, etc. Medical X-ray imaging procedures require digital flat detectors operating with low doses to reduce radiation health risks. Recently, metal halide perovskites (MHPs) have shown great potential in high-performance X-ray detection because of their attractive properties, such as strong X-ray absorption, high mobility-lifetime product, tunable bandgap, low-temperature fabrication, near-unity photoluminescence quantum yields, and fast photoresponse. In this paper, we review and introduce the development status of new perovskite X-ray detectors and imaging, which have emerged as a new promising high-sensitivity X-ray detection technology. We discuss the latest progress and future perspective of MHP-based X-ray detection in medical imaging. Finally, we compare the conventional detection methods with quantum-enhanced detection, pointing out the challenges and perspectives for future research directions toward perovskite-based X-ray applications.

• Journal of the Optical Society of Korea
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• v.19 no.6
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• pp.687-694
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• 2015

A photoluminescence (PL) imaging method using a vision camera was employed to inspect InGaN/GaN quantum-well light-emitting diode (LED) epi-wafers. The PL image revealed dark spot defective regions (DSDRs) as well as a spatial map of integrated PL intensity of the epi-wafer. The Shockley-Read-Hall (SRH) nonradiative recombination coefficient increased with the size of the DSDRs. The high nonradiative recombination rates of the DSDRs resulted in degradation of the optical properties of the LED chips fabricated at the defective regions. Abnormal current-voltage characteristics with large forward leakages were also observed for LED chips with DSDRs, which could be due to parallel resistances bypassing the junction and/or tunneling through defects in the active region. It was found that the SRH nonradiative recombination process was dominant in the voltage range where the forward leakage by tunneling was observed. The results indicated that the DSDRs observed by PL imaging of LED epi-wafers were high density SRH nonradiative recombination centers which could affect the optical and electrical properties of the LED chips, and PL imaging can be an inspection method for evaluation of the epi-wafers and estimation of properties of the LED chips before fabrication.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.575-580
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• 2014

We uniformly coated Eu(III)- and Tb(III)-doped yttrium oxide onto the surface of $SiO_2$ spheres and then characterized them by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction crystallography and UV-Visible absorption. 2D and 3D photoluminescence image map profiles were reported for the core-shell type structure. Red emission peaks of Eu(III) were observed between 580 to 730 nm and assigned to $^5D_0{\rightarrow}^7F_J$ (J = 0 - 4) transitions. The green emission peaks of Tb(III) between 450 and 650 nm were attributed to the $^5D_4{\rightarrow}^7F_J$ (J = 6, 5, 4, 3) transitions. For annealed samples, Eu(III) ions were embedded at a $C_2$ symmetry site in $Y_2O_3$, which was accompanied by an increase in luminescence intensity and redness, while Tb(III) was changed to Tb(IV), which resulted in no green emission.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.516-523
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• 1994

The interfacial coherency of metal organic chemical vapor deposition grown InGaAsP/InP heterostructure wafers was examined and their influences on the optoelectronic properties were investigated in this study. (400) symmetric and (511) asymmetric reflections were employed to measure the lattice coherency. Existence of misfit dislocations was examined by x-ray topography and reverified by photoluminescence (PL) imaging. PI, measurements were performed, and higher PL intensity was obtained for elastically strained samples and lower intensity for plastically deformed samples. The highest PL intensity was obtained for the sample lattice matched at the growth temperature. PL full-width at half maximum (FWHM) was found to depend on the degree of lattice mismatch. A correlatior between x-ray FWHM and PL intensity was empirically established. The results presented demonstrate that the interfacial coherency is of primary significance in affecting the optoelectronic properties through elastic strain and plastic deformation.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.435-435
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• 2014

Eu(III)-doped Y2O3 nanorods were deposited onto a Si substrate using electrostatic spray system. The photoluminescence imaging profiles were compared between the electrospray film and powder form. Using electrostatic spraying technique is very advantageous to generate a uniform monolayer film without much clustering of nanorods. Strong emission peaks were observed between 580 and 730 nm in response to an indirect excitation transition. Our results indicate that the electrospray technique could be very useful for generating thin films for displays and sensors.

• Transactions on Electrical and Electronic Materials
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• v.6 no.4
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• pp.169-172
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• 2005

[ $Y_2O_3:Eu$ ] powder was synthesized using a solution-combustion method by dissolving $(CH_3CO_2)_3Y$ and $(CH_3CO_2)_3$ Eu in methyl-alcohol solution. Results from X-ray diffractometery (XRD), thermogravimetry (TG)-differential thermal analysis (DTA) show that $Y_2O_3:Eu$ crystallizes completely when the dry powder is sintered at $500^{\circ}C$. The investigated optical properties were the photoluminescence emission spectra, the excitation spectra and luminescence decay curve. Europium (Eu) concentration had no observable effect on the optical spectrum which depended on the emission intensity. The mean lifetime of synthesized phosphors was $2.3\~2.6 ms$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.412-414
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• 2003

This paper is about research of scintillator layer, which is used for Hybrid method to increase electric signals in a-Se, the material of Direct method. In case of the thermal evaporation, CsI has column structure which is an disadvantage as scintillator. But it decreases scattering of incident X-ray, has better Light output intensity than other scintillation materials. CsI was made by Thermal evaporation. The Doping material, Na, 0.1, 0.3, 0.5, 0.7g were added in each sample. Analysis of absorbed wavelength, PL(Photoluminescence), Light output intensity, SEM, and XRD analysis were performed to analyze optical characteristics. Doping rate of CsI:Na to use as scintillation layer in a-Se based detector could be optimized.

• Prospectives of Industrial Chemistry
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• v.22 no.6
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• pp.41-58
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• 2019

다공성 실리콘 나노 입자는 약물 전달과 바이오이미징 등 의생명공학 분야에 다양하게 활용할 수 있는 가능성을 지닌 소재이다. 실리콘 원소 특유의 생분해성, 발광 효과, 다공성 구조 형성을 통한 약물 전달 기능에 이르는 다양한 특성으로 인해 미래 중개의학 플랫폼으로 각광 받고 있으며, 특히 바이오이미징 분야에서의 활용성이 매우 주목 받고 있다. 이에 대한 최신 연구 동향을 보고하고자, 다공성 실리콘 나노 입자의 제작 및 바이오이미징 응용 연구에 대한 성과를 소개한다. 바이오이미징을 위한 핵심 요소인 발광 특성(근적외선 방출, 마이크로 초 단위의 감쇄 시간 등)에 대한 논의를 바탕으로 최근 연구 성과 및 약물 전달 과정 모니터링 기능 등 다방면의 응용 가능성에 대한 방향을 소개한다. 실리콘 나노 입자의 제작 및 표면 화학 반응을 통한 기능성 제어, 이를 활용한 바이오이미징 연구 동향에 대한 전략도 광범위하게 제시하고자 한다.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2253-2260
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• 2007

A series of tetra donor substituted [2.2]paracyclophane-based two-photon absorption (TPA) fluorophores were synthesized in neutral and cationic forms. The imaging activity of overall set of fluorophores was studied by the two-photon induced fluorescence (TPIF) method in a range of solvents. We also measured a clear progression toward a longer photoluminescence lifetime with increasing solvent polarity (intrinsic photoluminescence lifetime, τi: ~2 ns in toluene → 12-16 ns in water). The paracyclophane fluorophores with this unique property can be utilized as an optical polarity probe for the biomolecular substrates. The combined measurement of the two-photon fluorescence microscopy (TPM) cell image and TPIF lifetime can give us a better understanding of the biological processes and local environments in the cells.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.16-20
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• 2002

The high bias voltage associated with the thick layer (typically 500-1000 ㎛) of selenium required to have an acceptable x-ray absorption in radiography and fluoroscopy applications may have some practical inconvenience. A hybrid x-ray detector with zinc sulfide-amorphous selenium structure has been developed to improve the x-ray sensitivity of a a-Se based flat-panel digital imaging detector. Photoluminescence(PL) characteristic of a ZnS:Ag phosphor layer showed a light emission peak centered at about 450 nm, which matches the sensitivity spectrum of selenium. The dark current of the hybrid detector showed similar characteristics with that of a a-Se detector. The x-ray sensitivity of hybrid and a-Se x-ray detector was 345 pC/㎠/mR and 295 pC/㎠/mR at an applied voltage of 10 V/㎛, respectively. The purpose of this study was to evaluate the pertinence of a solution using a thin selenium layer, as a photosensitive converter, with a thick coating of silver doped zinc sulfide phosphor.