• 제목/요약/키워드: Photoluminescence characteristics

검색결과 359건 처리시간 0.028초

OPTICAL CHARACTERISTICS OF POROUS SILICON CARBIDE BY PHOTOLUMINESCENCE SPECTROSCOPY

  • Lee, Ki-Hwan;Du, Ying-Lei;Lee, Tae-Ho
    • Journal of Photoscience
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    • 제6권4호
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    • pp.183-186
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    • 1999
  • We have been prepared the porous silicon carbide (PSC) by electrochemical etching of silicon carbide single crystals. Samples of PSC have been studied by the methods of scanning electron microscope (SEM) and photoluminescence (PL). Two PL bands attributed to the blue and green light emission were observed in this study. According to the anodization conditions, the main source of emission in the oxidized layers of PSC lies in the different surface defect centers which consist of different geometrical structures due to the polytypes. It means that origin of these PL bands may be existed in different size pores simultaneously. The present results indicate that the high energy band comes from the top porous layers while the low energy band comes from the lower porous layers.

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Zno:Eu 형광체의 Eu 결합 구조에 따른 발광 특성 (Luminescent characteristics with coupling structure of Eu for ZnO:Eu Phosphor)

  • 박용규;한정인;조황신;주성후
    • E2M - 전기 전자와 첨단 소재
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    • 제10권8호
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    • pp.763-769
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    • 1997
  • In this study we have synthesized Zno:Eu phosphors under various sintering atmospheres and temperatures. The analysis of X-ray diffractometer measurement indicates that for Zno:EuCl$_3$ phosphors sintered in air and vacuum 뗘 exists in the host lattice as Eu$_2$O$_3$and EuOCl respectively. From the photoluminescence for the phosphors sintered in vacuum Eu removes the broad-band emission of the ZnO host consequently isolating the red emission due to Eu$^{3+}$ ion and improves the color purity of red emission. The photoluminescence excitation and time resolving spectrum measurements suggest that energy-transfer process occurres from the self-activated defect center in ZnO host the Eu$^{3+}$ ion which exist in the host lattice in the form of EuOCl.

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전기발광 고분자의 이광자흡수특성 : 광발광 및 광전도 특성 (Two photon absorption of electroluminescent polymer : Photoluminescence and photoconductivity studies)

  • Lee, Geon-Joon;Jeon, Seung-Joon;Kim, Kyung-Kon;Jin, Jung-Il;Kang, Han-Saem;Joo, Jin-Soo
    • 한국광학회:학술대회논문집
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    • 한국광학회 2001년도 제12회 정기총회 및 01년도 동계학술발표회
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    • pp.228-229
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    • 2001
  • Electroluminescent polymers have attracted considerable attention due to possible applications as large-area light-emitting displays. There have been many efforts to improve the electroluminescent efficiency. To design the polymer with high efficiency, it is necessary to understand the luminescent mechanism. In this report, we have investigated two-photon absorption(2PA) characteristics of highly efficient electroluminescent polymer using various techniques such as nonlinear transmission, 2PA-induced photoluminescence(2PA-PL) and 2PA-induced photoconductivity(2PA-PC). (omitted)

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PAE법에 의한 GaAs/Ge/Si 이종접합 성장과 그 특성 (GaAs/Ge/Si Heteroepitaxy by PAE and Its Characteristics)

  • 김성수;박상준;이성필;이덕중;최시영
    • 전자공학회논문지A
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    • 제28A권5호
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    • pp.380-386
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    • 1991
  • Hydrogen plasma-assisted epitaxial(PAE) growth of GaAs/Si and GaAs/Ge/Si with Ge buffer layer has been investigated. By means of photoluminescence, Nomarski microscopu, and $\alpha$-step, it could be known that GaAs on Si with Ge buffer layer has better crystalline quality than GaAs on Si without Ge buffer layer. The stoichiometry of GaAs layer on Si was confirmed by the depth profile of Auger electron spectroscope (AES). Also the native oxide(SiO$_2$) layer on Si substrate was plama-etched and the removal of the oxide layer was confirmed by AES. Photoluminescence peak wavelength of GaAs/Ge/Si with Ge buffer of 1\ulcorner thickness and GaAs growth rate of 160$\AA$/min was 8700$\AA$and FWHM was 12$\AA$.

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Luminescence Characteristics of Red Light Emitting (YVO4:Eu Thin-Film Phosphors Deposited on Si Substrate Using Pulsed Laser Deposition

  • Kim, Dong-Kuk;Kang, Wee-Kyung
    • Bulletin of the Korean Chemical Society
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    • 제25권12호
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    • pp.1859-1862
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    • 2004
  • Europium doped yttrium vanadate ($YVO_4$:Eu) phosphor thin films were grown using a pulsed laser deposition (PLD) technique on silicon substrate. The structural characterization carried out on a series of ($YVO_4$:Eu films at post annealing temperature in the range of 550 $^{\circ}C$-1150 $^{\circ}C$ indicating that films were preferentially (200) oriented at post annealing temperature above 950 $^{\circ}C.$ Photoluminescence of thin film increased with the increase of post annealing temperature and ambient oxygen pressure though the thin film has the powder-like surface morphology at oxygen pressure above 200 mTorr. Photoluminescence decay from $^5D_1$ level of $Eu^{3+}$ show the great concentration dependency, which can be used as a good parameter to control the composition of ($YVO_4$:Eu thin film.

연소합성법에 의한 YAG:Ce 형광체의 발광 특성 (Photoluminescence Characteristics of YAG:Ce Phosphor by Combustion Method)

  • 이승규;최형욱
    • 한국전기전자재료학회논문지
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    • 제20권6호
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    • pp.536-540
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    • 2007
  • The Ce-doped YAG(Yttrium Aluminum Garnet, $Y_3Al_5O_{12}$) phosphor powders were synthesized by combustion method. The luminescence, formation process and structure of phosphor powders were investigated by means of XRD, SEM and PL. The XRD patterns show that YAG Phase can form through sintering at $1000^{\circ}C$ for 2 h. This temperature is much lower than that required to synthesize YAG phase via the conventional solid state reaction method. There were no intermediate Phases such as YAP(Yttrium Aluminum Perovskite, $YAlO_3$) and YAM(Yttrium Aluminum Monoclinic, $Y_4Al_2sO_9$) observed in the sintering process. The powders absorbed excitation energy in the range $410{\sim}510\;nm$. Also, the crystalline YAG:Ce showed broad emission peaks in the range $480{\sim}600\;nm$ and had maximum intensity at 528 nm.

Chemiluminescent Properties of Fluorene- and Carbazole-Containing Polymeric Fluorophores

  • 이칠원;이희우;김철희;강명선
    • Bulletin of the Korean Chemical Society
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    • 제21권7호
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    • pp.701-704
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    • 2000
  • Fluorene and carbazole-containing distyrylarylene model and polymeric fluorophores were prepared by reacting 2,7-dibromo-9-butylfluorene and 3,6-dibromo-9-butylcarbazole with styrene and divinylbenzene using the Heck reaction for the chemiluminesc ence. The UV-vis absorbance, photoluminescence (PL) as well as the chemiluminescence (CL) characteristics of the model and polymeric fluorophores were measured. Sodium salicylate-catalyzed reaction of bis(2,4,6-trichlorophenyl)oxalate (TCPO) with hydrogen peroxide produced a strong chemiluminescent blue light emission with 439-489 nm in the presence of the fluorophore. The wave-length of CL light was similar to that of photoluminescence. The chemiluminescent intensity was decayed according to the exponential equation.The glow of CL maintained more than 12 hr and was visible with naked eye.

Photoluminescence of the Mn-doped ZnGa₂O₄ Phosphors Prepared by Coprecipitation of Metal Salts

  • 고중곤;박희동;김동표
    • Bulletin of the Korean Chemical Society
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    • 제20권9호
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    • pp.1035-1039
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    • 1999
  • Manganese-activated zincgallate (Zn1-xMnxGa2O4) phosphor as a green phosphor was readily prepared by coprecipitation in aqueous basic solution of metal salts. The obtained product converted to amorphous zincgallate even at 300℃, followed by crystallization at 1000 ℃. The pyrolyzed phosphor showed fine particle, then reduction treatment at 900 ℃ changed into homogeneous shape with slight grain growth(particle size less than 0.5 mm). The photoluminescence characteristics of the zincgallates have been investigated as a function of dopant concentrations, reducing atmospheres and temperatures. Under UV excitation the phosphors displayed the highest green emission efficiency at 504 nm when the specimen oxidized at 1000 ℃ was reduced at 900 ℃ in a mild hydrogen atmosphere (97% N2, 3% H2) with a flow rate of 100 ml/min.

연소합성법으로 제작한 $Y_3Al_5O_{12}:Eu^{3+}$ 나노형광체의 광학적 특성 (Photoluminescence Characteristics of $Y_3Al_5O_{12}:Eu^{3+}$ Nano-Phosphors by Combustion Method)

  • 곽현호;김세준;박용서;최형욱
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.406-407
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    • 2008
  • For this study, Yttrium aluminum garnet (YAG) particles doped $Eu^{3+}$ ions were prepared via the combustion process using the 1:1 ratio of metal ions to reagents. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope (SEM), and photoluminescence (PL). The various YAG peaks, with the (420) main peak, appeared at all sintering temperature XRD patterns. The YAG phase crystallized with results that are in good agreement with the JCPDS diffraction file 33-0040. The SEM image showed that the resulting YAG:Eu powders had larger sizes with the increse in the sintering temperature. The grain size was about 50nm at $1000^{\circ}C$. The PL intensity of $Eu^{3+}$ has the line peaks of 598, 610, 632nm and has main peak at 591nm.

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전구체의 특성 및 AlF3 융제가 청색 발광의 BAM:Eu 형광체의 특성에 미치는 영향 (Effects of the Characteristics of Precursor Powders and AlF3 Flux on the Properties of Blue-Emitting BAM:Eu Phosphor Powders)

  • 조중상;이상호;강윤찬
    • 한국재료학회지
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    • 제18권3호
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    • pp.137-142
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    • 2008
  • Blue-emitting BAM:Eu phosphor powders were formed by post-treatment of precursor powders with hollow or dense morphologies. The morphologies of the precursor powders obtained by spray pyrolysis were controlled by changing the preparation conditions and by changing the type of spray solution. The effects of the morphologies of the precursor powders on the characteristics of the BAM : Eu phosphor powders reacted with $AlF_3$ flux were investigated. Precursor powders with a spherical shape and a hollow morphology produced BAM : Eu phosphor powders with a plate-like morphology, a fine size and a narrow size distribution. On the other hand, precursor powders with a spherical shape and dense morphology produced BAM : Eu phosphor powders with a plate-like morphology and a large size. $AlF_3$ flux improved the photoluminescence intensities of the BAM : Eu phosphor powders. The photoluminescence intensity of the fine-sized BAM : Eu phosphor powders with a plate-like morphology was 90% of the commercial product under vacuum ultraviolet conditions.