• Journal of Sensor Science and Technology
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• v.13 no.3
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• pp.252-257
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• 2004

$Y_{2}O_{3}:Eu^{3+}$ thin films have been grown on $Al_{2}O_{3}$(0001) substrates by a pulsed laser deposition (PLD) method. The phosphor thin films were deposited at a substrate temperature of 500, 600, and $700^{\circ}C$ under the oxygen pressure of 100, 200, and 300 mTorr. The crystallinity, surface roughness and photoluminescence of the films are highly dependent on the substrate temperature and oxygen pressure. The films grown on $Al_{2}O_{3}$(0001) substrate even under the different substrate temperatures and oxygen pressures exhibited (222) preferred orientation. The luminescent spectra exhibited strong luminescence of ${^{5}D_{0}}-{^{7}F_{2}}$ transition within $Eu^{+3}$ peaking at 612 nm. The crystallinity and luminescence intensity of the films have been improved as the substrate temperature increasing. With increase of oxygen pressure from 50 to 300 mTorr, the crystallinity of the films has been uniformly decreased. The photoluminescence intensity and surface roughness have similar behaviors as a function of oxygen pressure. At 200 mTorr, both photoluminescence intensity and surface roughness show a maximum.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.408-412
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• 2005

[ $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ ] phosphor particles with high photoluminescence intensity under long wavelength ultraviolet were prepared by spray pyrolysis. We investigated the effect of $NH_4F$ flux added into starting solution on the morphology and photoluminescence intensity of $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor prepared by spray pyrolysis. $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor particles prepared from starting solution containing $NH_4F$ flux had the maximum photoluminescence intensity at the post-treatment temperature of $1200^{\circ}C$ and the maximum photoluminescence intensity of $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor particles prepared from the starting solution containing $NH_4F$ flux was $137\%$ of that of the phosphor particles prepared from the starting solution without flux material. $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor particles prepared from starting solution containing $NH_4F$ flux had larger size and more aggregated morphology than those prepared from starting solution without flux material. The photoluminescence intensity of $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor particles prepared from starting solution containing $NH_4F$ flux above $3wt.\%$ had high photoluminescence intensities. The addition amount of $NH_4F$ flux showing the maximum photoluminescence intensity was $12wt.\%$. The optimum amount of $NH_4F$ flux was $5wt.\%$ when we considered the morphological and photoluminescence characteristics of $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ ohosphor particles prepared by spray pyrolysis.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.612-617
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• 2007

Both photoluminescence and thermal characteristics for $SrAl_2O_4:Eu^{+2},\;Dy^{+3}$ phosphors synthesized with various aluminum compounds (${\alpha}-Al_2O_3$, ${\gamma}-Al_2O_3$, amorphous-$Al_2O_3$ and $Al(OH)_3)$ were investigated in this study. The formation temperature of the host $SrAl_2O_4$ crystal is changed by these various aluminum compounds, as a result of the different thermal decomposition temperature of $SrCO_3$ phase. Among these compounds, the amorphous-$Al_2O_3$ phase shows the lowest formation temperature of the host $SrAl_2O_4$ crystal. The PL emission and excitation spectra of $SrAl_2O_4:Eu^{+2},\;Dy^{+3}$ phosphor are not affected by these aluminum compounds. After the removal of the Xenon lamp excitation (360 nm), however, the excellent longphosphorescent property of the phosphor is obtained by the amorphous-$Al_2O_3$ phase, although the decay time for all phosphors decrease exponentially.

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.496-502
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• 2005

Green-light emitting $BaMgAl_{10}O_{19}:Mn^{2+}$ (BAM:Mn) phosphor particles were prepared by spray Pyrolysis. The effect of reactor temperature and flow rate of carrier gas in the spray Pyrolysis on the morphology, crystallinity and photoluminescence characteristics under vacuum ultraviolet were investigated. The morphology of the as-Prepared Particles obtained by spray Pyrolysis had spherical shape and non-aggregation characteristics regardless of the reactor temperature. The spherical shape of the as-prepared Particles obtained by spray pyrolysis at low temperature disappeared after Post-treatment. On the other hand the as-Prepared Particles obtained by spray Pyrolysis at $1600^{\circ}C$ maintained spherical shape and non-aggregation characteristics after post-treatment at $1400^{\circ}C$ for 3 h under reducing atmosphere. The BAM:Mn Phosphor Particles Prepared by spray Pyrolysis at different reactor temperatures had pure crystal structure and high photoluminescence intensities under vacuum ultraviolet after post-treatment. BAM:Mn phosphor particles prepared by spray Pyrolysis at low How rate of carrier gas had complete spherical shape and filed morphology and high photoluminescence intensity after post-treatment under reducing atmosphere.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.349-352
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• 2012

ZnO thin films were deposited on a-, c- and m- plane oriented 4H-SiC substrates by pulsed laser deposition. ZnO nanowires were formed on substrates by tube furnace. Shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. Average surface roughness and root mean square surface roughness were measure by atomic force microscope. Optical properties were investigated by Photoluminescence measurement. Density of ZnO nanowires grown on a-, c- and m-plane oriented 4H-SiC substrates were 17.89 ${\mu}m^{-2}$, 9.98 ${\mu}m^{-2}$ and 2.61 ${\mu}m^{-2}$, respectively.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.295-298
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• 2011

ZnS:Mn, Dy yellow phosphors for White Light Emitting Diode were synthesized by a solid state reaction method using ZnS, $MnSO_4{\cdot}5H_2O$, S and $DyCl_3{\cdot}6H_2O$ powders as starting materials. The mixed powder was sintered at $1000^{\circ}C$ for 4 h in an air atmosphere. The photoluminescence of the ZnS:Mn, Dy phosphors showed spectra extending from 480 to 700 nm, peaking at 580 nm. The photoluminescence of 580 nm in the ZnS:Mn, Dy phosphors was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions. The highest photoluminescence intensity of the ZnS:Mn, Dy phosphors under 450 nm excitation was observed at 4 mol% Dy doping. The enhanced photoluminescence intensity of the ZnS:Mn, Dy phosphors was explained by energy transfer from $Dy^{3+}$ to $Mn^{2+}$. The CIE coordinate of the 4 mol% Dy doped ZnS:Mn, Dy was X = 0.5221, Y = 0.4763. The optimum mixing conditions for White Light Emitting Diode was obtained at the ratio of epoxy : yellow phosphor = 1:2 form CIE coordinate.

• Korean Journal of Materials Research
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• v.19 no.7
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• pp.356-361
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• 2009

The optical characterization of self-assembled InAs/AlAs Quantum Dots(QD) grown by MBE(Molecular Beam Epitaxy) was investigated by using Photoluminescence(PL) spectroscopy. The influence of thin AlAs barrier on QDs were carried out by utilizing a pumping beam that has lower energy than that of the AlAs barrier. This provides the evidence for the tunneling of carriers from the GaAs layer, which results in a strong QD intensity compared to the GaAs at the 16 K PL spectrum. The presence of two QDs signals were found to be associated with the ground-states transitions from QDs with a bimodal size distribution made by the excitation power-dependent PL. From the temperature-dependent PL, the rapid red shift of the peak emission that was related to the QD2 from the increasing temperature was attributed to the coherence between the QDs of bimodal size distribution. A red shift of the PL peak of QDs emission and the reduction of the FWHM(Full Width at Half Maximum) were observed when the annealing temperatures ranged from 500 $^{\circ}C$ to 750 $^{\circ}C$, which indicates that the interdiffusion between the dots and the capping layer was caused by an improvement in the uniformity size of the QDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.627-631
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• 2010

ZnS:Mn yellow phosphors doped with Cu for white light emitting diodes were synthesized by solid state reaction method. The optical properties and structures of ZnS:Mn,Cu phosphors were investigated by x-ray diffraction, photoluminescence, and scanning electro microscopy. Photoluminescence excitation spectra originated from $Mn^{2+}$ were ranged from 450 nm to 500 nm. The yellow emission at around 580 nm was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions in ZnS:Mn,Cu phosphors. The highest photoluminescence intensity of the phosphors under 405 nm excitation was obtained at Cu concentration of 0.02 mol%. The enhanced photoluminescent intensity in the ZnS:Mn,Cu phosphors was interpreted by energy transfer from Cu to Mn.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1083-1086
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• 2004

We applied the spray pyrolysis technique to prepare Mn-doped $BaMgAl_{10}O_{17}$ (BAM) particles with high photoluminescence, which could be used in the plasma display device as a green phosphor. Several preparation conditions were investigated in order to tail the vacuum ultraviolet (VUV) characteristics. Some portions of barium were replaced with strontium to improve the luminescent intensity of BAM:Mn particles under VUV excitation. The content of Mn and Sr was optimized to obtain high luminescent efficiency under VUV excitation. Finally, the optimized BAM:Mn green particles showed higher photoluminescence intensity than that of commercial $Zn_2SiO_4$ and comparable with commercial barium-aluminate phosphor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.328-329
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• 2009

This paper presents the effect of organic Ag complex sintering temperature on the MEH-PPV photoluminescence (PL) properties. MEH-PPV and organic Ag complex was coated on the glass substrate by spin coating method. The coated Ag complex was sintered in an air atmosphere. The sintering temperature was varied from 100 to $200^{\circ}C$ and sintering time was 5 min. The Ag film sintered at temperature higher than $120^{\circ}C$ shows very low sheet resistance less than $0.5\;{\Omega}{/\square}$. The coated MEH-PPV measure photoluminescence (PL) intensity at 580 nm. The PL peak was shifted to the higher wavelength with increasing the sintering temperature.