• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.253-256
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• 2002

$Gd_2O_3$:Eu phosphor particles were prepared by largescale ultrasonic spray pyrolysis process. The morphological control of $Gd_2O_3$:Eu particles in spray pyrolysis was performed by adding polymeric precursors into spray solution containing nitrate salts. The effect of composition and amount of polymeric precursors on the morphology, crystallinity, and photoluminescence characteristics of $Gd_2O_3$:Eu particles was investigated. The influence of chain length of PEG on the morphology and photoluminescence intensity was investigated. $Gd_2O_3$:Eu particles prepared from aqueous solution containing no polymeric precursors had a hollow structure and rough surfaces after annealing process. The phosphor particles prepared from solution containing 0.1M CA and 0.lM PEG with high molecular weight as 1,500 had a spherical and filled morphology and the highest photoluminescence intensity, which was 48% higher than that of the $Y_2O_3$:Eu commercial product.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.671-679
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• 2007

[ $SrAl_2O_4:Eu^{2+},\;Dy^{3+}$ ] phosphor was synthesized using the impregnation method, and its photoluminescence and long-afterglow properties were investigated, A mixture of $Sr(NO_3)_2,\;Al(NO_3)_2\;9H_2O,\;EuCl_3\;6H_2O,\;DyCl_3\;6H_2O,\;NdCl_3\;6H_2O$ salts were dissolved in distilled water and impregnating into the polymer precursor. After drying, the impregnated mixture was heat treated at $900-1400^{\circ}C$ for 2h in a $N_2-H_2$ reduction atmosphere. The microstructure and crystal structure of the $SrAl_2O_4:Eu^{2+},\;Dy^{3+}$ powders were examined by scanning electron microscopy and X-ray diffraction, respectively. The photoluminescence spectra showed an excitation band along over wide wavelength of 250-450nm, and a broaden emission with a maxima peak at 360nm. In addition, the spectra also showed a good long after glow that decayed over a 1000sec period after 10 min excitation illumination.

• 한국재료학회지
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• 제24권7호
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• pp.339-343
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• 2014

$CaWO_4:Sm_x$(x = 0, 0.5, 1.0, 1.5, 2.0 mol%) white phosphors with different concentrations of $Sm^{3+}$ ions were synthesized using the hydrothermal method. The crystal structure, surface, and optical properties of the $CaWO_4:Sm_x$ phosphors were investigated using X-ray diffraction(XRD), field-emission scanning electron microscopy(FE-SEM), photoluminescence(PL) and photoluminescence excitation(PLE). From the XRD results, the crystal structure of the $CaWO_4:Sm$ phosphors was found to be tetragonal. The $CaWO_4:Sm$ phosphors became more cohesive with increasing $Sm^{3+}$-ion concentration. The photoluminescence excitation(PLE) peak of the phosphors, at around 250 nm, was ascribed to the transition from the 1A1 ground-state to the high-vibration level of 1T2 in the $WO{_4}^{2-}$ complex. The maximum emission spectra of the phosphors were observed when the $Sm^{3+}$ concentration was 0.5 mol%. The luminescence intensity of the $CaWO_4$ phosphors was decreased for $Sm^{3+}$ concentrations greater than 0.5 mol%.

• Current Optics and Photonics
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• 제3권2호
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• pp.164-171
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• 2019

Photoluminescence (PL) properties of GaN-based light-emitting diodes (LEDs) were analyzed to study the effects of carrier leakage on the luminescence properties at room temperature. The electrical leakage and PL properties were compared for LEDs showing leakages at forward bias and an LED with an intentional leakage path formed by connecting a parallel resistance of various values. The leakages at the forward bias, which could be observed from the current-voltage characteristics, resulted in an increase in the excitation laser power density for the maximum PL efficiency (ratio of PL intensity to excitation power) as well as a reduction in the PL intensity. The effect of carrier leakages on PL properties was similar to the change in PL properties owing to a reduction of the photovoltage by a reverse current since the direction of the carrier movement under photoexcitation is identical to that of the reverse current. Valid relations between PL properties and electrical properties were observed as the PL properties deteriorated with an increase in the carrier leakage. The results imply that the PL properties of LED chips can be an indicator of the electrical properties of LEDs.

• 한국재료학회지
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• 제31권10호
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• pp.582-585
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• 2021

Y₂O₃:Eu_x (x = 0.005, 0.01, 0.02, 0.03, 0.05, 0.1 mol) phosphors are synthesized with different concentrations of Eu³⁺ ions by solvothermal method. The crystal structure, surface and optical properties of the Eu doped Y₂O₃ phosphors are investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and photoluminescence (PL) and photoluminescence excitation (PLE) analyses. From X-ray diffraction (XRD) results, the crystal structure of the Eu doped Y₂O₃ phosphor is found to be cubic. The maximum emission spectra of the Eu doped Y₂O₃ phosphors are observed at 0.05 mol Eu³⁺ concentration. The photoluminescence of 615 nm in the Eu doped Y₂O₃ phosphors is associated with ⁵D₀ → ⁷F₂ transition of Eu³⁺ ions. The decrease in emission intensity of 0.1 mol Eu doped Y₂O₃ is interpreted by concentration quenching. The International Commission on Illumination (CIE) coordinates of 0.05 mol Eu doped Y₂O₃ phosphor are X = 0.6547, Y = 0.3374.

• 한국재료학회지
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• 제23권3호
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• pp.177-182
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• 2013

Nanosphere lithography is an inexpensive, simple, high-throughput nanofabrication process. NSL can be done in different ways, such as drop coating, spin coating or by means of tilted evaporation. Nitride-based light-emitting diodes (LEDs) are applied in different places, such as liquid crystal displays and traffic signals. The characteristics of gallium nitride (GaN)-based LEDs can be enhanced by fabricating nanopatterns on the top surface of the LEDs. In this work, we created differently sized (420, 320 and 140 nm) nanopatterns on the upper surfaces of GaN-based LEDs using a modified nanosphere lithography technique. This technique is quite different from conventional NSL. The characterization of the patterned GaN-based LEDs revealed a dependence on the size of the holes in the pattern created on the LED surface. The depths of the patterns were 80 nm as confirmed by AFM. Both the photoluminescence and electroluminescence intensities of the patterned LEDs were found to increase with an increase in the size of holes in the pattern. The light output power of the 420-nm hole-patterned LED was 1.16 times higher than that of a conventional LED. Moreover, the current-voltage characteristics were improved with the fabrication of differently sized patterns over the LED surface using the proposed nanosphere lithography method.

• 한국전기전자재료학회논문지
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• 제23권1호
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• pp.14-17
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• 2010

$ZnGa_2O_4$ powder were prepared by combustion method and $Mn^{2+}$ ions, a green luminescence activator, and $Cr^{3+}$ ions, a red luminescence activator were separately doped into $ZnGa_2O_4$. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope (SEM), and photoluminescence (PL). The various $ZnGa_2O_4$ peaks, with the (311) main peak, appeared at all sintering temperature XRD patterns. The PL specctrums of $ZnGa_2O_4$ powder showed main peak of 425 nm, and maximum intensity at the sintering temperature of $1200^{\circ}C$. SEM images shown that nano sized particles(about 200 nm) were of spherical shape. The characteristics of $ZnGa_2O_4$ containing 0.004 mol $Mn^{2+}$(505 nm, green) and $ZnGa_2O_4$ containg 0.002 mol $Cr^{3+}$ (696 nm, red) were shown to be the best.

• 한국재료학회지
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• 제5권8호
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• pp.936-944
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• 1995

본 논문에서는 저압 유기금속 기상성장(low pressure metal organic vapor phase epitaxy) 장치에 의해 성장된 InGaAsP/InP 구조의 상(phase) 분리현상(Spinodal 분해)이 photoluminescence (PL)의 강도와 반치폭(full-width at half maximum, FWHM)에 미치는 영향에 대해 연구하였다. 시료의 격자부정합은 double crystal x-ray diffractometer를 사용하여 측정하였고, InGaAsP에피막의 Spinodal분해조직은 투과전자현미경 (transmission electron microscopy, TEM)을 사용하여 관측하였다. 격자부정합에서 도출된 부정합응력과 Spinodal 모듈레이션의 주기(periodicity)와 밀접한 관계가 있음이 밝혀졌다. 또한 이러한 InGaAsP에피막의 미세조직 구조와 시료의 광전 특성이 어떤 관계가 있는지 알기 위해 PL 실험을 수행했으며, PL강도와 FWHM이 조성 모듈레이션의 주기에 강하게 의존한다는 것을 알 수 있었다. 이 현상을 심층적으로 연구하기 위해 부정합응력이 야기할 수 있는 interaction 탄성변형 에너지라는 새로운 함수를 유도하였으며 이에 의하여 실험결과를 설명할 수 있었다.

• 한국진공학회지
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• 제7권2호
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• pp.104-111
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• 1998

저압 MOCVD 방법을 이용하여 InGaAs/InP 양자우물구조를 성장하였다. 성장 정지 시간에 따른 photoluminescence특성의 변화를 통하여 계면구조를 분석하였다. InP표면을 $PH_3$ 분위기로, InGaAs표면을 $AsH_3$분위기로 유지하며 성장을 정지하는 경우에는 성장 정지 시간이 길어짐에 따라 불순물 유입에 의한 것으로 생각되는 PL반가폭의 증가를 관찰하였다. InP표면에 AsH3을 공급하는 경우에는 As-P교환에 의해 우물층 두께가 증가하여 PL피크가 저에너지로 이동하였고, 반가폭의 변화는 크지 않았다. 계면 양자우물구조를 형성하여 As-P 교환작용에 대해 조사하였고, 1-2monolayer가 InAs유효두께로 계산되었다. InGaAs 표면에 $PH_3$을 공급한 결과, PL피크가 고에너지로 이동하는 것을 관찰하였고 동시에 반가폭도 증가 하였다. 이는 메모리 효과에 의해 InP층으로 As침투를 억제하고, InGaAs표면에서의 국부적 인 As-P교환에 의한 것으로 생각된다.

• 한국광학회지
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• 제3권3호
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• pp.183-190
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• 1992

$Al_x/Ga_{1-x}$ /As/AlAs GaAs 계로 이루어진 비대칭 이중 양자우물 구조의 광학적 특성을 photoluminescence, photoluminescence excitation, time-resolved photoluminescence를 통하여 조사하였다. 양자장벽 AlAs의 두께에 따른 특성 변화를 조사하기 위하여 두께를 15$\AA$., 150$\AA$로 제작하였다. 양자장벽이 15$\AA$인 경우 매우 빠른 전자의 관통 현상을 보여 주었으며, 이로 인해 $Al_x/Ga_{1-x}$As의 여기자 재결합에 해당하는 피크가 관찰되지 않았다. AlAs 양자장벽이 150$\AA$인 경우에는 $Al_x/Ga_{1-x}$As양자우물에서 여기자 재결합에 의한 피크가 50ps 이하로 빠른 decay시간을 보여 주었으며 이것은 양자장벽과의 $\Gamma$-X전이에 의한 것으로 사료되었다. GaAs양자우물에서의 luminescence decay는 두 시료 모두 1ns정도 이었으나, 15$\AA$인 경우에는 약 100ps의 rise시간이 존재하였으며 이것은 정공의 관통에 의한 시간으로 판명되었다.