• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.31-35
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• 1999

In this paper, the lifetime dependence as a function of the line length of Al-1%Si thin film interconnections due to electromigration in semiconductor devices was studied. Al-1%Si thin film interconnections with a pattern of straight type were formed by using a standard photolithography process. The test patterns manufactured have line lengths in the range of 100 to 1600 $mu extrm{m}$. Al-1%Si thin film interconnections with Ti underlayers showed longer lifetime than those without Ti underlayers. Ti underlayers are believed to improve electromigration resistance resulting in a longer lifetime in Al-1%Si thin film interconnections. The dependence of lifetime on the line length in Al-1%Si/Ti thin film interconnections shows a saturation tendency near 800 $\mu\textrm{m}$ line length.

• Macromolecular Research
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• v.12 no.4
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• pp.391-398
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• 2004

Thick-film photolithography is a new technology that combines lithography processes, such as exposure and development, with the conventional thick-film process applied to screen-printing. In this study, we developed a low-temperature cofireable silver paste applicable for thick-film processing to form fine lines using photolitho-graphic technologies. The optimum paste composition for forming fine lines was investigated. The effect of processing parameters, such as the exposing dose, had on the fine-line resolution was also investigated. As the result, we found that the type of polymer and monomer, the silver powder loading, and the amount of photoinitiator were the main factors affecting the resolution of the fine lines. The developed photoimageable silver paste was printed on a low-temperature cofireable green sheet, dried, exposed, developed in an aqueous process, laminated, and then fired. Our results demonstrate that thick-film fine lines having widths < 20 $\mu\textrm{m}$ can be obtained after cofiring.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.3
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• pp.137-144
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• 2023

Micro electro mechanical systems (MEMS) and precision machines require excellent friction and wear characteristics to improve energy efficiency generated during sliding motion. In this study, DLC thin film with high hardness and low friction was deposited on STS304 substrate material by CVD method, and dot-shaped convex and concave micropatterns were fabricated by photolithography process. The diameter of the pattern was 20 ㎛, the pitch was 40 ㎛, and a pattern having a mesh type arrangement was fabricated and an abrasion test was performed. The results of the wear test on the micro pattern confirmed that the friction coefficient characteristics were improved compared to STS 304 and DLC thin films. In addition, in this result, the micro-pattern showed 11.4% more improved friction coefficient than the DLC thin film. The friction coefficient characteristics for convex and concave patterns of the same size showed almost similar results.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.978-982
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• 2004

We present high aspect ratio 100nm-scale nickel stamper using e-beam lithography process and Cr/Qz mask for the injection molding process of nano grating patterns. Conventional photolithography blank mask (CrON/Cr/Qz) consists of quartz substrate, Cr layer of UV protection and CrON of anti-reflection layer. We have used Cr/Qz blank mask without anti-reflection layer of CrON which is non-conductive material and ebeam lithography process in order to simplify the nickel electroplating process. In nickel electroplating process, we have used Cr layer of UV protection as seed layer of nickel electroplating. Fabrication conditions of photolithography mask using e-beam lithography are optimized with respect to CrON/Cr/Qz blank mask. In this paper, we have optimized e-beam lithography process using Cr/Qz blank mask and fabricated nickel stamper using Cr seed layer. CrON/Cr/Qz blank mask and Cr/Qz blank mask require optimal e-beam dosage of $10.0{\mu}C/cm^2$ and $8.5{\mu}C/cm^2$, respectively. Finally, we have fabricated $116nm{\pm}6nm-width$ and $240nm{\pm}20nm-height$ nickel grating stamper for the injection molding pattern.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.769-772
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• 2004

We report on the developed fabrication method of lanthanide-doped xerogel/porous anodic alumina structures for an image formation via the aluminum anodization, the sol-gel synthesis, and the photolithography process. The structures of europium- or terbium-doped xerogel/porous anodic alumina are also considered in view of application in electroluminescent devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.428-430
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• 2009

We fabricated flexible OTFT-backplanes with combining printing technique and conventional photolithography process for the electrophoretic display(EPD). The active area size of backplane was 6" in diagonal direction and consisted of $192{\times}150$ pixels, containing 1 OTFT employed bottom contact structure and 1 capacitance in each pixel.

• Advances in materials Research
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• v.2 no.4
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• pp.195-208
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• 2013

A comprehensive theory of the spin coating technique has been reviewed and the basic principles and parameters controlling the process are clearly highlighted, which include spin speed, spin time, acceleration and fume exhaust. The process generally involves four stages: a dispense stage, substrate acceleration stage, a stage of substrate spinning at a constant rate and fluid viscous forces dominate fluid thinning behaviour and a stage of substrate spinning at a constant rate and solvent evaporation dominates the coating thinning behaviour. The study also considered some common thin film defects associated with this technique, which include comet, striation, chucks marks environmental sensitivity and edge effect and possible remedies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.111-117
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• 2008

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.275-280
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• 2005

We propose a new approach to greatly simplify the fabrication of conventional nanoimprint lithography (NIL) by combined nanoimprint and photolithography (CNP). We introduce a hybrid mask mold (HMM) made from UV transparent material with a UV-blocking Cr metal layer placed on top of the mold protrusions. We used a negative tone photo resist (PR) with higher selectivity to substrate the CNP process instead of the UV curable monomer and thermal plastic polymer that has been commonly used in NIL. Self-assembled monolayer (SAM) on HMM plays a reliable role for pattern transfer when the HMM is separated from the transfer layer. Hydrophilic $SiO_2$ thin film was deposited on all parts of the HMM, which improved the formation of SAM. This $SiO_2$ film made a sub-10nm formation without any pattern damage. In the CNP technique with HMM, the 'residual layer' of the PR was chemically removed by the conventional developing process. Thus, it was possible to simplify the process by eliminating the dry etching process, which was essential in the conventional NIL method.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.851-854
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• 2008

In order to reduce the manufacturing cost of TFT LCDs and cut down an amount facilities invested, there are many LCD panel makers contributes to convert the current Five-mask manufacturing process into the noble Four-mask fabrication process. We optimized the slit mask to improve the poor process reliability.