• 진공이야기
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• 제5권2호
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• pp.10-17
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• 2018

Chalcogenide and oxide heterostructures have been studied as a next-generation electronic materials, due to their interesting electronic properties, such as direct bandgap semiconductor, ferroelectricity, ferromagnetism, superconductivity, charge-density waves, and metal-insulator transition, and their modification near heterointerfaces, so called, electronic reconstruction. An angle-resolved photoemission spectroscopy (ARPES) is a powerful technique to unveil such novel electronic phases in detail, especially combined with high quality thin film preparation methods, such as, molecular beam epitaxy and pulsed laser deposition. In this article, the recent ARPES results in chalcogenide and oxide thin films will be introduced.

• 한국재료학회지
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• 제27권1호
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• pp.48-52
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• 2017

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.

• Bulletin of the Korean Chemical Society
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• 제32권8호
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• pp.2531-2536
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• 2011

Ethanol is a prototype molecule used in probing catalytic reactivity of oxide catalysts such as $TiO_2$. In the present study, we adsorbed ethanol on $TiO_2$(001) at room temperature (RT) and the corresponding bonding state of ethanol was systematically studied by x-ray photoemission spectroscopy (XPS) using synchrotron radiation. Especially, we compared $TiO_2$(001) surfaces prepared in ultra-high vacuum (UHV) with different surface treatments such as $Ar^+$-sputtering and oxidation with molecular $O_2$, respectively. We find that the saturation coverage of ethanol at RT varies depending on the amount of reduced surface defects (e.g., $Ti^{3+}$) which are introduced by $Ar^+$-sputtering. We also find that the oxidized $TiO_2$(001) surface has other type of surface defects (not related to Ti 3d state) which can dissociate ethanol for further reaction above 600 K. Our C 1s core level spectra indicate clearly resolved features for the two chemically distinct carbon atoms from ethanol adsorbed on $TiO_2$(001), showing the adsorption of ethanol proceeds without C-C bond dissociation. No other C 1s feature for a possible oxidized intermediate was observed up to the substrate temperature of 650 K.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.168-168
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• 2012

본 연구에서는 Molybdenum oxide (MoOx)-doped 4,4',4"-tris[2-naphthyl(amino)] triphenylamine(2-TNATA)의 P-doping에 의한 hole ohmic contact과 fullerene (C60)/lithium (LiF)의 electron ohmic contact에 의한 All Ohmic contact를 이용한 유기 발광 다이오드 (OLEDs)의 광저항 특성의 향상을 설명한다. 이 소자의 성능은 MoOx-doped 2-TNATA의 두께와 도핑농도에 큰 영향을 받는다. glass/ITO/MoOx-doped 2-TNATA (100 nm)/Al 구조의 소자에서 MoOx-doped 2-TNATA 도핑 농도가 25%에서 75%로 증가할수록 hole only device의 hole ohmic 특성이 향상됐다. 그 이유는 p-type doping effect 때문이다. 또한 photoemission spectra 분석결과, p-type doping effect는 hole-injecting barrier 높이는 낮추고, hole conductivity는 향상되었다. 이것은 2-TNATA에 도핑된 MoOx의 전하전송 콤플렉스의 형성으로 hole carrier의 수가 증가하여 발생되었다. MoOx-doped 2-TNATA의 hole ohmic contact과 fullerene (C60)/lithium fluoride (LiF)의 electron ohmic contact 으로 구성된 glass/ITO/MoOx-doped 2-TNATA (75%, 60 nm)/NPB (10 nm)/Alq3 (35 nm)/C60 (5 nm)/LiF (1 nm)/Al (150 nm)의 소자구조는 6,4V에서 127,600 cd/m2 최대 휘도와 약 1,000 cd/m2에서 4.7 lm/W의 높은 전력 효율을 보여준다.

• 대한화학회지
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• 제40권12호
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• pp.719-723
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• 1996

고체표면의 비점유 전자에너지 상태를 연구하고자 역광전자분광기를 제작하고 시험하였다. 이 분광기는 초고진공 챔버속에 전자총과 광검출기로 구성되어 있다. 전자총은 궤도 시뮬레이션과 전류 측정을 통해 좋은 집속도와 높은 전류밀도를 가지고 있음을 알 수 있었다. 이 분광기의 전체적인 분해능은 0.74 eV이고, 광검출기의 감도는 약 10 counts/$sec{\cdot}{\mu}A$이다. 하나의 결과로서 Ge(111) 시료의 역광전자분광 스펙트럼은 이론적인 계산결과와 잘 일치하였다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2006년도 동계학술연구발표회 및 자성 스핀트로닉스 국제학술대회
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• pp.2-3
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• 2006

• 한국진공학회:학술대회논문집
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• 한국진공학회 2005년도 제28회 학술발표회 초록집
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• pp.44-44
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• 2005

• 광학과기술
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• 제8권4호
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• pp.26-29
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• 2004

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제10회 학술발표회 논문개요집
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• pp.128-129
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• 1996

• Applied Science and Convergence Technology
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• 제24권5호
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• pp.151-155
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• 2015

The interfacial electronic structure between zinc phthalocyanine (ZnPc) and aluminumdoped zinc oxide (AZO) substrates has been evaluated by ultraviolet photoemission spectroscopy and angle-dependent x-ray absorption spectroscopy to understanding the molecular orientation of a ZnPc layer on the performance of small molecule organic photovoltaics (OPVs). We find that the ZnPc tilt angle improves the ${\pi}-{\pi}$ interaction on the AZO substrate, thus leading to an improved short-circuit current in OPVs based on phthalocyanine. Furthermore, the molecular orientation-dependent energy level alignment has been analyzed in detail using ultraviolet photoemission spectroscopy. We also obtained complete energy level diagrams of ZnPc/AZO and ZnPc/indium thin oxide.