• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.2
• /
• pp.117-122
• /
• 2001

In this paper, we report on photoelectrochemical etching process of 6H-SiC semiconductor wafer. The etching was performed in two-step process; anodization of SiC surface to form a deep porous layer and thermal oxidation followed by an HF dip. Etch rate of about 615${\AA}$/min was obtained during the anodization using a dilute HF(1.4wt% in H$_2$O) electrolyte with the etching potential of 3.0V. The etching rate was increased with the bias voltage. It was also found out that the adition of appropriate portion of H$_2$O$_2$ into the HF solution improves the etching rate. The etching process resulted in a higherly anisotropic etching characteristics and showed to have a potential for the fabrication of SiC devices with a novel design.

• Journal of the Korean Electrochemical Society
• /
• v.14 no.4
• /
• pp.191-195
• /
• 2011

Wet chemical etching methods were utilized to conduct Si surface texturing, which could enhance photoelectrochemical hydrogen generation rate. Two different etching methods tested, which were anisotropic metal-catalyzed electroless etching and isotropic etching. The Si nano-texture that was fabricated by the anisotropic etching showed ~25% increase in photocurrent for H2 generation. The photocurrent enhancement was attributed to the reduced reflection loss at the nano-textured Si surface, which provided a layer of intermediate density between water and the Si substrate.

• Proceedings of the Korean Ceranic Society Conference
• /
• 2000.10a
• /
• pp.71.2-71
• /
• 2000

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.497-500
• /
• 1999

This paper reports on the fabrication and characteristics of recessed gate GaN MESFETs fabricated using a photoelectrochemical wet etching method. The unique etching process utilizes photo-resistive mask and KOH based etchant. GaN MESFETs with successfully recessed gate structure was characterized in terms of dc and RF performance. The fabricated GaN MESFET exhibits a current saturation at $V_{DS}$ = 4 V and a pinch-off at $V_{GS}$ =-3V The peak drain current of the device is about 230mA/mm at 300 K and the value is remained almost same for 500K operation. The $f_{T}$ and $f_{max}$ from the device are 6.357Hz and 10.25 GHz, respectively.y.y.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.05a
• /
• pp.126-126
• /
• 1998

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.08a
• /
• pp.94.4-94
• /
• 1998

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.08a
• /
• pp.107.3-107
• /
• 1998

• Transactions of the Korean hydrogen and new energy society
• /
• v.18 no.1
• /
• pp.40-45
• /
• 2007

Methylene blue(MB) was photocatalytically degraded with one-body photoanode and solar simulator to investigate the possible application to both environmental purification and photoelectrochemical cell for hydrogen production. Photoactive titanium dioxide was formed on both sides of Ti plate following steps such as rinsing-annealing-calcination or anodizing(20 V, 30 V)-annealing($350^{\circ}C$, $450^{\circ}C)$ after etching. The prepared titania plate($2cm{\times}2\;cm$, ca 1.6 mg $TiO_2$ on the basis of $1\;{\mu}m$ thickness) was used to degrade MB(10 ppm in 200 mL solution). The reaction tended to follow the Langmuir-Hinshelwood kinetics with zero order. Comparative experiments with Degussa P25 showed the same zero order kinetics when 2 mg of P25 had been used, while the first order kinetics when 200 mg used. This concludes the feasibility of the prepared titania plate as a material for the purification of low-level harmful organics and an electrode or a membrane for photoelectrochemical system for hydrogen production.

• Transactions of the Korean hydrogen and new energy society
• /
• v.13 no.1
• /
• pp.34-41
• /
• 2002

CdS and $TiO_2$ nanoparticles were made by the precipitation method and sol-gel method, respectively, and they were mixed mechanically and then treated with the hydrothermal processing. CdS-$TiO_2$ composite particulate films were thus prepared by casting CdS-$TiO_2$ mixed sol onto $SnO_2$ conducting glass and a subsequent heat-treatment at $400^{\circ}C$. Again, the physico-chemical and photoelectrochemical properties of these films were controlled by the surface treatment with $TiCl_4$ aqueous solution. The photocurrents and the hydrogen production rates measured under the present experimental conditions varied in the range of $3.5{\sim}4.5mA/cm^2$ and $0.3{\sim}1.8cc/cm^2$-hr, respectively, and showed the maximum values at the $CdS/[CdS+TiO_2]$ mole ratio of 0.2. Also, the surface treatment with $TiCl_4$ aqueous solution caused a considerable improvement in the photocatalytic activity, Probably as a result of close contacts between the primary particles by the etching effect of $TiCl_4$ It was found that the photoelectrochemical performance of these particulate films could be effectively enhanced by this approach.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.417-417
• /
• 2016

Global environmental deterioration has become more serious year by year and thus scientific interests in the renewable energy as environmental technology and replacement of fossil fuels have grown exponentially. Photoelectrochemical (PEC) cell consisting of semiconductor photoelectrodes that can harvest light and use this energy directly to split water, also known as photoelectrolysis or solar water splitting, is a promising renewable energy technology to produce hydrogen for uses in the future hydrogen economy. A major advantage of PEC systems is that they involve relatively simple processes steps as compared to many other H2 production systems. Until now, a number of materials including TiO2, WO3, Fe2O3, and BiVO4 were exploited as the photoelectrode. However, the PEC performance of these single absorber materials is limited due to their large charge recombinations in bulk, interface and surface, leading low charge separation/transport efficiencies. Recently, coupling of two materials, e.g., BiVO4/WO3, Fe2O3/WO3 and CuWO4/WO3, to form a type II heterojunction has been demonstrated to be a viable means to improve the PEC performance by enhancing the charge separation and transport efficiencies. In this study, we have prepared a triple-layer heterojunction BiVO4/WO3/SnO2 photoelectrode that shows a comparable PEC performance with previously reported best-performing nanostructured BiVO4/WO3 heterojunction photoelectrode via a facile solution method. Interestingly, we found that the incorporation of SnO2 nanoparticles layer in between WO3 and FTO largely promotes electron transport and thus minimizes interfacial recombination. The impact of the SnO2 interfacial layer was investigated in detail by TEM, hall measurement and electrochemical impedance spectroscopy (EIS) techniques. In addition, our planar-structured triple-layer photoelectrode shows a relatively high transmittance due to its low thickness (~300 nm), which benefits to couple with a solar cell to form a tandem PEC device. The overall PEC performance, especially the photocurrent onset potential (Vonset), were further improved by a reactive-ion etching (RIE) surface etching and electrocatalyst (CoOx) deposition.