• Journal of the Korean Society of Radiology
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• v.8 no.7
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• pp.417-422
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• 2014

In this study, the influence degree of the scattering of the line depending on the incident energy of the radiation objective was to evaluate a new method of quantitative methods of PSNR is provided.Value of MSE and PSNR of the DR and the Target is placed at the left when there was no change in CR Target, the change appeared to ttaran MSE and PSNR value in tube voltage. Both CR and DR seen that there is a variation of the MSE and PSNR depending on the tube voltage change Computon showed that the scattered radiation effects. If the CR and DR 80 The changes in the MSE and PSNR experience the symptoms suddenly occur in areas kVp was found to affect the optoelectronic Computon E, and at the same time, the scattered radiation detector Computon Computon by scattering due to the photoelectric effect. CR and DR of the imaging device in the future on the basis of the energy bands of the photoelectric effect of 60 kVp 70 kVp, 80 kVp, 90 kVp, compares the value of the PSNR and MSE 100 kVp in accordance with the change of the tube voltage of the CR and device DR proposes jigil scattering study of the degradation of the line quality is achieved.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.85-90
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• 2017

The $TiCl_4$ as a blocking material is adsorbed in the mesoporous $TiO_2$ electron transfer layer(ETL) of the Perovskite solar cell to prevent the direct contact between the FTO electrode and the photoactive layer(AL), and facilitate the movement of the electrons between $TiO_2:TiCl_4$ ETL and Perovskite AL to improve the photoelectric conversion efficiency(PCE). The structure of the perovskite solar cell is FTO/$TiO_2:TiCl_4$/Perovskite($CH_3NH_3PbI_3$)/spiro-OMeTAD/Ag. It was investigated that the dipping time of the $TiO_2$ into $TiCl_4$ aqueous solution affects on the photoelectric characteristics of the device. By the dipping for 30 minutes, the PCE of the perovskite solar cell with the $TiO_2:TiCl_4$ ETL was the highest 10.46%, which is 27% higher than the cell with $TiO_2$ ETL. From SEM, EDS, and XRD characterization on the $TiO_2:TiCl_4$ ETL and the perovskite AL, it was measured that the decrease of the porosity of the $TiO_2$ layer, the detection of the Cl component by the $TiCl_4$ adsorption, the cube-type morphology of perovskite AL, and shift of the $PbI_2$ peak of the perovskite AL. From these results, it was confirmed that the $TiO_2:TiCl_4$ ETL and the perovskite AL were formed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.814-818
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• 2016

DSSCs (dye-sensitized solar cells) based on $TiO_2/SiO_2$ multi layer AR (anti-reflection) coating on the outer glass FTO (fluorine-doped tin oxide) substrate are investigated. We have coated an AR layer on the surface of a DSSCs device by using an IAD (ion beam-assisted deposition) system and investigated the effects of the AR layer by measuring photovoltaic performance. Compared to the pure FTO substrate, the multi layer AR coating increased the total transmittance from 67.4 to 72.9% at 530 nm of wavelength. The main enhancement of solar conversion efficiency is attributed to the reduction of light reflection at the FTO substrate surface. This leads to the increase of Jsc and the efficiency improvement of DSSCs.

• Fire Science and Engineering
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• v.23 no.4
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• pp.98-103
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• 2009

In this paper, in order to analyze the response characteristics of the smoke detectors which is suitable with the residential fire detector, the paper fire and flammable liquid fire experiment came to be accomplished according to UL Standard for safety for smoke detector for fire alarm signaling systems, UL 268. Also Photoelectric smoke detector, the Analog smoke detector and the single station alarm device came to be used with the specimen and the response characteristics of the smoke detectors which follows in these two types(paper, flammable liquid) test fire came to be analyzed. As a result, according to test fire there was some difference to response characteristics of the smoke detectors.

• Journal of Power Electronics
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• v.19 no.2
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• pp.519-528
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• 2019

The unified power quality conditioner (UPQC) is an effective custom power device that is used at the point of common coupling to protect loads from voltage and current-related PQ issues. Currently, most researchers have studied series unit and parallel unit models and an idealized transformer model. However, the interactions of the series and parallel converters in AC-link are difficult to analyze. This study utilizes an equivalent transformer model to accomplish an electric connection of series and parallel converters in the AC-link and to establishes a precise unified mathematical model of the UPQC. The strong coupling interactions of series and parallel units are analyzed, and they show a remarkable dependence on the excitation impedance of transformers. Afterward, a feed-forward decoupling method based on a unified model that contains the uncertainty components of the load impedance is applied. Thus, this study presents an adaptive method to estimate load impedance. Furthermore, simulation and experimental results verify the accuracy of the proposed modeling and decoupling algorithm.

• Journal of the Korea Convergence Society
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• v.10 no.8
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• pp.53-58
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• 2019

Recently, product research has been continuously conducted to enhance accessibility to blood pressure measurement for the purpose of healthcare for the chronic patient. In previous studies, electrocardiogram (ECG) and photoelectric pulse wave (PPG) are analyzed to calculate systolic and diastolic blood pressure. The problem is the development of analysis algorithms for accuracy and reproducibility. In this study, in the development stage of a micro blood pressure measuring device, the size of the device was reduced and the measurement method was simplified, while the algorithm was to extract systolic blood pressure (SBP) using only two PPGs and obtain diastolic blood pressure (DBP). The difference value of PPG, DF_P, is inversely related to SBP, and has a proportional relationship with DBP, which can be leaked by algorithm, and DBP can be tracked through SBP.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.10
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• pp.1370-1374
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• 2018

A heterojunction $SnS_2/p-Si$ photodetector was fabricated by RF magnetron sputtering system. $SnS_2$ was formed with 2-inch $SnS_2$ target. Al was applied as the front and the back metal contacts. Rapid thermal process was conducted at $500^{\circ}C$ to enhance the contact quality. 2D material such as $SnS_2$, MoS2 is very attractive in various fields such as field effect transistors (FET), photovoltaic fields such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors, especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment. Especially, $SnS_2$ has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material. The large bandgap of $SnS_2$ offers the advantage for the large on-off current ratio and low leakage current. The $SnS_2/p-Si$ photodetector clearly shows the current rectification when the thickness of $SnS_2$ is 80 nm compared to when it is 135 nm. The highest photocurrent is $19.73{\mu}A$ at the wavelength of 740 nm with $SnS_2$ thickness of 80 nm. The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.1
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• pp.68-74
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• 2018

All transparent UV photodetector based on ZnO was fabricated with structure of NiO/ZnO/$SnO_2$/ITO by using RF and DC magnetron sputtering system. ZnO was deposited with 4 inch ZnO target (purity 99.99%) for a quality film. In order to build p-n junction up, p-type NiO was formed on n-type ZnO by using reactive sputtering method. The indium tin oxide (ITO) which is transparent conducting oxide (TCO) was applied as a transparent electrode for transporting electrons. To improve the UV photodetector performance, a functional $SnO_2$ layer was selected as an electron transporting and hole blocking layer, which actively controls the carrier movement, between ZnO and ITO. The photodetector (NiO/ZnO/$SnO_2$/ITO) shows transmittance over 50% as similar as the transmittance of a general device (NiO/ZnO/ITO) due to the high transmittance of $SnO_2$ for broad wavelengths. The functional $SnO_2$ layer for band alignment effectively enhances the photo-current to be $15{\mu}A{\cdot}cm^{-2}$ (from $7{\mu}A{\cdot}cm^{-2}$ of without $SnO_2$) with the quick photo-responses of rise time (0.83 ms) and fall time (15.14 ms). We demonstrated the all transparent UV photodetector based on ZnO and suggest the route for effective designs to enhance performance for transparent photoelectric applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.620-621
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• 2008

Transparent electronics has been one of the key terminologies forecasting the ubiquitous technology era. Several researchers have thus extensively developed transparent oxide-based thin-film transistors (TFTs) on glass and plastic substrates although in general high voltage operating devices have been mainly studied considering transparent display drivers. However, low voltage operating oxide TFTs with transparent electrodes are very necessary if we are aiming at logic circuit applications, for which transparent complementary or one-type channel inverters are required. The most effective and low power consuming inverter should be a form of complementary p-channel and n-channel transistors but real application of those complementary TFT inverters also requires electrical- and even photo-stabilities. Since p-type oxide TFTs have not been developed yet, we previously adopted organic pentacene TFTs for the p-channel while ZnO TFTs were chosen for n-channel on sputter-deposited $AlO_x$ film. As a result, decent inverting behavior was achieved but some electrical gate instability was unavoidable at the ZnO/$AlO_x$ channel interface. Here, considering such gate instability issues we have designed a unique transparent complementary TFT (CTFTs) inverter structure with top n-ZnO channel and bottom p-pentacene channel based on 12 nm-thin nano-oxide/self assembled monolayer laminated dielectric, which has a large dielectric strength comparable to that of thin film amorphous $Al_2O_3$. Our transparent CTFT inverter well operate under 3 V, demonstrating a maximum voltage gain of ~20, good electrical and even photoelectric stabilities. The device transmittance was over 60 % and this type of transparent inverter has never been reported, to the best of our limited knowledge.

• Journal of the Korean institute of surface engineering
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• v.53 no.4
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• pp.182-189
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• 2020

Indium tin oxide (ITO) used a transparent electrode of a photoelectric device has a low sheet resistance and a high transmittance. However, ITO is disadvantageous in that the process cost is expensive, and the process time is long. Silver nanowires (AgNWs) transparent electrodes are based on a low cost solution process. In addition, it has attracted attention as a next-generation transparent electrode material that replaces ITO because it has similar electrical and optical characteristic to ITO, it is noted as a. AgNW thin films are mainly produced by spin-coating. However, the spin-coating process has a disadvantage of high material loss. In this study, the material loss was reduced by using about 2~10 ㎕ of AgNW solution on a (25 × 25) ㎟ substrate using the shear-coating method. It was also possible to align AgNWs in the drag direction by dragging the meniscus of the solution. The electro-optical properties of the AgNW thin film were adjusted by changing the experimental parameters that the amount of AgNWs suspension, the gap between the substrate and the blade, and the coating speed. As a result, AgNW thin films with a transmittance of 90.7 % at a wavelength of 550 nm and a sheet resistance of 15 Ω/□ was deposited and exhibited similar properties to similar AgNW transparent electrodes studied by other researchers.