• 한국전자파학회논문지
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• 제14권5호
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• pp.466-471
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• 2003

본 논문에서는 포토다이오드의 방향이 항상 신호광의 입사방향과 일치하도록 수광각을 자동정렬하는 광검출기의 구조를 새로이 소개한다. 이 광검출기에서는 신호광을 수신하기 위한 포토다이오드 1개를 중심으로 $\Phi$-축상에 4개의 포토다이오드와 $\theta$-축상에 2개의 포토다이오드를 추가로 배열하여 각각 $\Phi$-축과 $\theta$-축에 해당하는 모터를 구동한다. 이 광검출기는 임의의 모든 방향으로부터 입사하는 신호광에 대하여 약 1초 이내에 수신방향을 신호광 쪽으로 일치시킨다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1022-1025
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• 2002

This paper presents the reliability of planar InP/InGaAs avalanche photodiodes (APD's) with recess etching, which is very crucial for the commercial 10-Gb/s optical receiver application. A versatile design for the planar InP/InGaAs APD's and bias-temperature tests to evaluate long-term reliability at temperature from 200 to $250^{\circ}C$. The reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. The lifetime of the APD's is estimated by a degradation activation energy. Based on the test results, it is concluded that the planar InP/InGaAs APD's with recess etching shows the sufficient reliability for practical 10-Gb/s optical receivers.

• 대한전자공학회논문지
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• 제26권11호
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• pp.1652-1657
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• 1989

In this research, the PN junction type Si photodiodes have been fabricated on the low doped P type(Na=7x10**14 cm**-3) and N type (Nd=4x10**14cm**-3) (100) silicon substrates. We could find out that the dark current was lower in the N type substrate than in the P type substrate. Some well designed photodiodes showed relatively good optical and electronic characteristics that the dark current is lower than 5 nA at 10V of reverse bias condition, that the breakdown voltage is higher than 250V, and that the quantum efficiency is larger than 86% at the wavelength of $6328{\AA}$

• 전자공학회논문지A
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• 제29A권10호
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• pp.42-48
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• 1992

RoA is an important figure of merits for estimating the performance of p-n junction infrared detectors. This paper presents the tunneling current contribution to RoA of $Hg_{1-x}Cd_{x}$Te n$^{+}$-p juction photodiodes. Then, a diffusion model, a thermal generation-recombination model, an indirect tunneling model via trap, and a band-to-band direct tunneling model are considered to calculate RoA. Using these models, RoA depending on temperature, doping concentration, and mole fraction is calculated. Also from these results, under various operating conditions the dominant dark current mechanisms cna be understood.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.206-209
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• 2002

With the progress of semiconductor processing technology, avalanohe photodiodes (APDs) based on InP/InGaAs are used for high-speed optical receiver modules. Planar-type APDs give higher reliability than mesa-type APDs. However, Planar-type APDs are struggled with a problem of intensed electric field at the junction curvature, which causes edge breakdown phenomena at the junction periphery. In this paper, we focused on studying the effects of junction curvature for APDs performances by different etching processes followed by single diffusion to from p-n junction. The performance of each process is characterized by observing electric field profiles and carrier generation rates. From the results, it can be understood to predict the optimum structure, which can minimize edge breakdown and improve the manufacturability.

• 전자공학회논문지A
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• 제32A권1호
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• pp.89-96
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• 1995

Lateral p-i-n photodiodes have been fabricated, electrically tested, and incorporated into microwave control circuits such as an optically excited microwave atttenuator and reflection type phase shifter. Circuit design procedures for the loaded-line phase shifter with the optically controlled p-i-n photodiode are presented. The equal loss loading mode presented for the first time for the phase shifter circuits with lossy load allows an equal insertion loss of the phase shifter in both of its phase states. It is found that the insertion loss of the equal loss loading mode phase shifter constructed with the fabricated p-i-n photodiode load are about 3dB for 11.25$^{\circ}$ bit and 1dB for 5.625$^{\circ}$ bit for the frequency range of 2GHz to 11GHz.

• 전자공학회논문지D
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• 제34D권7호
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• pp.45-55
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• 1997

Electircal characteristics of HgCdTe photodiodes with a heterostructure to achieve high performance are analyzed numerically. A two-dimensional device simulator which can handle a HgCdTe heterostructure, was developed for this work. The effects of band nonparabolicity, carrier degeneracy, and band-offset of heterointerace are included in a carrier transport model. A unified generation-recombination model includes simultaneously phonon-assisted tunneling and pure tunneling of carriers via traps is newly employed for describing the electric field and temperature dependency of dark current effectively. Furthermore, to accurately predict the effect mole fraction variations on genration rates, ray-trace algorithm is incorporated in the our simulator. Under the various circumstances such as dark, illumination, and surface states, electrical properties of planar heterostructure photodiode are presented and those of homojunction are compared. These results serve as a explanation of cap layer's role on performance.

• 한국전기전자재료학회논문지
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• 제14권3호
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• pp.241-245
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• 2001

In this paper, we present parameter optimization technique for GaAs/AlGaAs multiple quantum well avalanche photodiodes used for image capture mechanism in high-definition system. Even under flawless environment in semiconductor manufacturing process, random variation in process parameters can bring the fluctuation to device performance. The precise modeling for this variation is thus required for accurate prediction of device performance. The precise modeling for this variation is thus required for accurate prediction of device performance. This paper will first use experimental design and neural networks to model the nonlinear relationship between device process parameters and device performance parameters. The derived model was then put into genetic algorithms to acquire optimized device process parameters. From the optimized technique, we can predict device performance before high-volume manufacturign, and also increase production efficiency.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1996년도 추계학술대회 논문집
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• pp.474-478
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• 1996

Process monitoring in laser welding is essential for automation and quality control of products. Various signals from laser welding, such as plasma, sound, optical signals, etc., are utilized for monitoring the process and detecting abnormal weld conditions. In this study, both W light from plasma formed above the weld pool and IR signal from the melting pool are detected with photodiodes and PC-based A/D board, and analyzed to give a guidance about the weld quality. Experimental results show the possibility of using the signals for predicting and evaluating the weld qualify and adapting into the system for on-line process monitoring.

• 한국전자파학회논문지
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• 제15권1호
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• pp.96-102
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• 2004

본 논문에서는 한 개의 빔 분할기와 감응파장영역이 서로 다른 2개의 포토다이오드를 사용하여 무선광 차동 검출기를 구성하고 잡음광 소거에 활용하였다. 빔 분할기를 차동검출기에 사용하면 2개의 포토다이오드의 위치에서 잡음광의 강도를 항상 동일하게 만들어주므로 잡음전압을 소거하기 위한 이득비 자동조절회로가 필요하지 않게 되어 회로가 간단해진다. 광필터가 부착된 단일의 포토다이오드에 비하여 빔 분할기를 이용한 차동검출기에서 신호대 잡음비를 약 14 ㏈ 개선하였다.