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Ilgu Yun;Hyun, Kyung-Sook;Pyun, Kwang-Eui
- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2000.07a
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- pp.731-734
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- 2000
The characterization of Zinc diffusion processes applied fur high-speed avalanche photodiodes has been examined. The different diffusion process conditions for InP test structures were explored. The Zinc diffusion profiles, such as the diffusion depth and the Zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the process variables and material parameters. It is observed that the diffusion profiles are severely impacted on the process parameters, such as the amount of Zn$_3$P$_2$source and the diffusion time, as well as material parameters, such as doping concentration of diffusion layer. These results can be utilized for the high-speed avalanche photodiode fabrication.
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Jeon, Su-Chang;Yun, Il-Gu
- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2005.07a
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- pp.79-80
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- 2005
In this paper, the circuit models of optical to electrical(O/E) characteristics of waveguide photodiode(WGPD) submodule are examined. Test structures of WGPD and WGPD submodule were fabricated and S21 parameter was measured to characterize the O/E conversion property. Valid circuit models were derived by RF circuit simulation and O/E characteristics were modeled to analyze the effects of model parameters on the WGPD submodule performances. Based on the results, it can be concluded that the suggested WGPD submodule model can explain the characteristics of the O/E conversion of WGPD submodule, where the parasitic components originated from ribbon bonding block crucially influence on the performance of WGPD submodule, are able to show more efficient property by making compact bonding structure. We propose an effective WGPD submodule bonding structure and it can ensure the 40Gbps operation of WGPD.
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Park, Young-Hwan
- Journal of the Korea Academia-Industrial cooperation Society
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- v.10 no.3
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- pp.515-520
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- 2009
In this paper, the monitoring system was developed measuring the light signal emitted from the plasma in aluminum laser welding. Spectrum of plasma was measured using a spectrometer, and the photodiode was selected based on the spectrum analysis. The sensor signals for various welding conditions could be obtained, the characteristic of signal was closely related to the intensity and stability of plasma through mean value of signal and FFT analysis. The reason of signal fluctuation was behavior of plasma and keyhole and it was also connected with the surface bead shape of weld.
https://doi.org/10.5762/KAIS.2009.10.3.515 인용 PDF

Jang, Juneyoung;Choi, Pyung;Lyu, Hong-Kun;Shin, Jang-Kyoo
- Journal of Sensor Science and Technology
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- v.31 no.1
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- pp.1-5
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- 2022
In this paper, the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector with high sensitivity in the 408 nm - 941 nm range are presented. High sensitivity is important for photodetectors, which are used in several scientific and industrial applications. Owing to its inherent amplifying characteristics, the GBT MOSFET-type photodetector exhibits high sensitivity. The presented GBT MOSFET-type photodetector was designed and fabricated via a standard 0.18 ㎛ complementary metal-oxide-semiconductor (CMOS) process, and its characteristics were analyzed. The photodetector was analyzed with respect to its width to length (W/L) ratio, bias voltage, and incident-light wavelength. It was confirmed experimentally that the presented GBT MOSFET-type photodetector has over 100 times higher sensitivity than a PN-junction photodiode with the same area in the 408 nm - 941 nm range.
https://doi.org/10.46670/JSST.2022.31.1.1 인용 PDF KSCI