• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.731-734
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• 2000

The characterization of Zinc diffusion processes applied fur high-speed avalanche photodiodes has been examined. The different diffusion process conditions for InP test structures were explored. The Zinc diffusion profiles, such as the diffusion depth and the Zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the process variables and material parameters. It is observed that the diffusion profiles are severely impacted on the process parameters, such as the amount of Zn$_3$P$_2$source and the diffusion time, as well as material parameters, such as doping concentration of diffusion layer. These results can be utilized for the high-speed avalanche photodiode fabrication.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.79-80
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• 2005

In this paper, the circuit models of optical to electrical(O/E) characteristics of waveguide photodiode(WGPD) submodule are examined. Test structures of WGPD and WGPD submodule were fabricated and S21 parameter was measured to characterize the O/E conversion property. Valid circuit models were derived by RF circuit simulation and O/E characteristics were modeled to analyze the effects of model parameters on the WGPD submodule performances. Based on the results, it can be concluded that the suggested WGPD submodule model can explain the characteristics of the O/E conversion of WGPD submodule, where the parasitic components originated from ribbon bonding block crucially influence on the performance of WGPD submodule, are able to show more efficient property by making compact bonding structure. We propose an effective WGPD submodule bonding structure and it can ensure the 40Gbps operation of WGPD.

• 한국산학기술학회논문지
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• 제10권3호
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• pp.515-520
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• 2009

본 논문에서는 알루미늄 레이저 용접에서 발생하는 플라즈마의 빛을 계측하여 용접공정을 모니터링할 수 있는 시스템을 개발하였다. 분광분석을 통해 용접 시 플라즈마의 파장대를 계측하고 이를 근거로 하여 모니터링 시스템에 적합한 포토다이오드를 선정하였다. 이를 다양한 용접 조건에 대하여 적용하였고, 센서 신호의 특성은 플라즈마의 강도와 안정성에 밀접하게 연관되어 있음을 신호의 평균값과 FFT분석을 통하여 알 수 있었다. 이러한 신호 변동의 원인은 플라즈마와 키홀의 거동과 용접 비드의 형상과도 밀접한 관계가 있음을 분석하였다.

• 센서학회지
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• 제31권1호
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• pp.1-5
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• 2022

In this paper, the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector with high sensitivity in the 408 nm - 941 nm range are presented. High sensitivity is important for photodetectors, which are used in several scientific and industrial applications. Owing to its inherent amplifying characteristics, the GBT MOSFET-type photodetector exhibits high sensitivity. The presented GBT MOSFET-type photodetector was designed and fabricated via a standard 0.18 ㎛ complementary metal-oxide-semiconductor (CMOS) process, and its characteristics were analyzed. The photodetector was analyzed with respect to its width to length (W/L) ratio, bias voltage, and incident-light wavelength. It was confirmed experimentally that the presented GBT MOSFET-type photodetector has over 100 times higher sensitivity than a PN-junction photodiode with the same area in the 408 nm - 941 nm range.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 추계학술대회 논문요약집
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• pp.288-288
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• 2003

• 한국광학회:학술대회논문집
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• 한국광학회 2004년도 하계학술발표회
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• pp.282-283
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• 2004

• 한국광학회:학술대회논문집
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• 한국광학회 2008년도 동계학술발표회 논문집
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• pp.417-418
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• 2008

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 1998년도 추계학술발표대회 초록개요집
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• pp.3-5
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• 1998

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 1998년도 춘계학술발표대회 초록개요집
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• pp.18-19
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• 1998

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2011년도 추계학술논문요약집
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• pp.115-116
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• 2011