• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.20 no.1
• /
• pp.295-303
• /
• 1996

A new temperature compensation technique for hot-wire anemometer is proposed in this article. In contrast to the available compensation techniques, a photoconductive cell is introduced here as a variable resistor in the bridge. The major advantage of adopting an active component such as photoconductive cell is that temperature compensation can be achieved by using any kind of temperature sensors, once the output of temperature sensor is given as a voltage. Thereby, the temperature compensation can be made automatically and intelligently by a computer software or a hardware device. Validation experiments using a photoconductive cell with a thermocouple-thermometer are conducted in the temperature range from 3$0^{\circ}C$ to 5$0^{\circ}C$ and the velocity ranges from 8 m/s to 18 m/s.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.20 no.11
• /
• pp.3666-3675
• /
• 1996

A new hardware temperature compensation method for hot-wire anemometer is investigated and an analog compensating circuit is proposed in this article. A photoconductive cell is introduced here as a variable resistor in the anemometer bridge and the linearized output of a thermistor is used to monitor the input of the photoconductive cell. In contrast with the conventional method, any type of temperature sensor can be used for compensation if once the output of thermometer varies linearly with temperature. So the present technique can diversify the compensating means from a conventional passive compensating resistance to currently available thermometers. Because the resistance of a photoconductive cell can be set precisely by adopting a stabilizing circuit whose operation is based on the integration function of the operational amplifier, the accuracy of compensation can be enhanced. As an example of linearized thermometer, thermistor sensor whose output is linearized by a series resistor was used to monitor the fluid temperature variation. Validation experiment is conducted in the temperature ranged from 30 deg. C to 60 deg. C and the velocity up to 40 m/s. It is found that the present technique can be adopted as a compensating circuit for anemometer and hot-wire type airflow meter.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.25 no.9
• /
• pp.1201-1208
• /
• 2001

Variable temperature anemometer(VTA) has greater sensitivity than a conventional constant temperature anemometer(CTA). In order to design a reliable VTA system, however, an elaborate photoconductive cell stabilizing circuit which plays a key role in setting wire-overheat ratio should be firstly developed. In this study, a stabilizing circuit which adopts proportional-integral analog controller was proposed and thoroughly tested for its accuracy and reproducibility. In contrast to the available circuit suggested by Takagi, the present circuit has characteristic that the resistance of a photoconductive cell increases with the increase of input voltage, which makes the current circuit very suitable for the design of VTA. Finally, VTA adopting stabilizing circuit was made and the enhanced sensitivity of the VTA was validated experimentally by comparing the calibration curves of VTA and CTA.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.25 no.9
• /
• pp.1202-1202
• /
• 2001

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.1
• /
• pp.35-38
• /
• 2012

In this study, we have attempted to characterize the photovoltaic effect in real-time measurement of photoinduced current in a poly-Si-based solar cell using photoconductive atomic force microscopy (PC-AFM). However, the high contact resistance that originates from the metal-semiconductor Schottky contact disturbs the current flow and makes it difficult to measure the photoinduced current. To solve this problem, a thin metallic film has been coated on the surface of the device, which successfully decreases the contact resistance. In the PC-AFM analysis, we used a metal-coated conducting cantilever tip as the top electrode of the solar cell and light from a halogen lamp was irradiated on the PC-AFM scanning region. As the light intensity becomes stronger, the current value increases up to $200{\mu}A$ at 80 W, as more electrons and hole carriers are generated because of the photovoltaic effect. The ratio of the conducting area at different conditions was calculated, and it showed a behavior similar to that generated by a photoinduced current. On analyzing the PC-AFM measurement results, we have verified the correlation between the light intensity and photoinduced current of the poly-Si-based solar cell in nanometer scale.

• Korean Journal of Materials Research
• /
• v.28 no.11
• /
• pp.680-684
• /
• 2018

We investigate the effect of light intensity and wavelength of a solar cell device using photoconductive atomic force microscopy(PC-AFM). A $POCl_3$ diffusion doping process is used to produce a p-n junction solar cell device based on a polySi wafer, and the electrical properties of prepared solar cells are measured using a solar cell simulator system. The measured open circuit voltage($V_{oc}$) is 0.59 V and the short circuit current($I_{sc}$) is 48.5 mA. Moreover, the values of the fill factors and efficiencies of the devices are 0.7 and approximately 13.6 %, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, is used for direct measurements of photoelectric characteristics in limited areas instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics are observed. Results obtained through PC-AFM are compared with the electric/optical characteristics data obtained through a solar simulator. The voltage($V_{PC-AFM}$) at which the current is 0 A in the I-V characteristic curves increases sharply up to $18W/m^2$, peaking and slowly falling as light intensity increases. Here, $V_{PC-AFM}$ at $18W/m^2$ is 0.29 V, which corresponds to 59 % of the average $V_{oc}$ value, as measured with the solar simulator. Furthermore, while the light wavelength increases from 300 nm to 1,100 nm, the external quantum efficiency(EQE) and results from PC-AFM show similar trends at the macro scale but reveal different results in several sections, indicating the need for detailed analysis and improvement in the future.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.3
• /
• pp.160-163
• /
• 2013

We investigated the effect of light intensity and wavelength of a solar cell device by using photoconductive atomic force microscopy (PC-AFM). The $POCl_3$ diffusion doping process was used to produce a p-n junction solar cell device based on a Poly-Si wafer and the electrical properties of prepared solar cells were measured using a solar cell simulator system. The measured open circuit voltage ($V_{oc}$) is 0.59 V and the short circuit current ($I_{sc}$) is 48.5 mA. Also, the values of the fill factors and efficiencies of the devices are 0.7% and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, was used for direct measurements of photoelectric characteristics in local instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics were observed. Results obtained through PC-AFM were compared with the electric/optical characteristics data obtained through a solar simulator. The voltage ($V_{PC-AFM}$) at which the current was 0 A in the I-V characteristic curves increased sharply up to 1.8 $mW/cm^2$, peaking and slowly falling as light intensity increased. Here, $V_{PC-AFM}$ at 1.8 $mW/cm^2$ was 0.29 V, which corresponds to 59% of the average $V_{oc}$ value, as measured with the solar simulator. Also, while light wavelength was increased from 300 nm to 1,100 nm, the external quantum efficiency (EQE) and results from PC-AFM showed similar trends at the macro scale, but returned different results in several sections, indicating the need for detailed analysis and improvement in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.344-348
• /
• 2004

The CdSe thin films wee grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are $600^{\circ}C\;and\;430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the timperature range 30K to 150K by impurity scatering and decreased in the temperature range 150K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^7$, the MAPD of 335mV, and the rise and decay time of 10ms and 9.5ms, respectively

• Journal of Sensor Science and Technology
• /
• v.7 no.5
• /
• pp.350-355
• /
• 1998

We fabricated a photoconductive cell made of polycrystalline CdS thick film which has high photo-sensitivity using a print/sintering method. The resultant grain size is about $4\;{\mu}m$. When $CuCl_2$ of 0.06 to 0.12 mg is added, the sensitivity and the ratio of photocurrent to dark current are 0.8 and $10^5$, respectively. The response wavelength is 511 nm. The rise and decay response times are 50 and 20 ms, respectively. In addition, the maximum power dissipation is beyond 80mW. We noticed that the addition of $CuCl_2$ between 0.06 and 0.12 mg to 1g of CdS results in a reliable formation of photoconductive sensor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.349-352
• /
• 2004

The $CdS_{1-x}Se_x$ thin films were grown on the GaAs(100) wafers by a Hot Wall Epitaxy method(HWE). The temperatures the source and the substrate temperature are $580^{\circ}C\;and\;440^{\circ}C$ respectively. The crystalline structure of thin films was investigated by double crystal X-tay diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time.