• Title/Summary/Keyword: Photo Current

Search Result 414, Processing Time 0.028 seconds

Present Status and Prospects of Thin Film Silicon Solar Cells

  • Iftiquar, Sk Md;Park, Jinjoo;Shin, Jonghoon;Jung, Junhee;Bong, Sungjae;Dao, Vinh Ai;Yi, Junsin
    • Current Photovoltaic Research
    • /
    • v.2 no.2
    • /
    • pp.41-47
    • /
    • 2014
  • Extensive investigation on silicon based thin film reveals a wide range of film characteristics, from low optical gap to high optical gap, from amorphous to micro-crystalline silicon etc. Fabrication of single junction, tandem and triple junction solar cell with suitable materials, indicate that fabrication of solar cell of a relatively moderate efficiency is possible with a better light induced stability. Due to these investigations, various competing materials like wide band gap silicon carbide and silicon oxide, low band gap micro-crystalline silicon and silicon germanium etc were also prepared and applied to the solar cells. Such a multi-junction solar cell can be a technologically promising photo-voltaic device, as the external quantum efficiency of such a cell covers a wider spectral range.

Active Optical Logic Devices Using Surface-emitting Microlasers (표면광 마이크로 레이저를 이용한 능동형 광 논리 소자의 동작 특성)

  • 유지영
    • Korean Journal of Optics and Photonics
    • /
    • v.4 no.3
    • /
    • pp.294-300
    • /
    • 1993
  • Monolithic NOR and INVERTER active optical logic devices inte- grated with surface-emitting microlasers, heterojunction photo- transistors(HPT) in parallel and resistors in series are characterized. The differential quantum efficiency of the typical AlGaAs superlattice microlaser integrated in the active optical logic devices is 15%. Current gain of the HPT is 57, when emitter-collector voltage and input optical power are 4 V and $50{\mu}W$, respectively. $57{\mu}W$ of output power from the active optical logic device decreases to zero when $47{\mu}W$ of input optical power is incident on the HPT part of the active logic device.

  • PDF

보론 에미터를 이용한 n-type 결정질 실리콘 태양전지 특성

  • Kim, Chan-Seok;Tak, Seong-Ju;Park, Seong-Eun;Kim, Yeong-Do;Park, Hyo-Min;Kim, Seong-Tak;Kim, Hyeon-Ho;Bae, Su-Hyeon;Kim, Dong-Hwan
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 2012.05a
    • /
    • pp.99.2-99.2
    • /
    • 2012
  • 현재 양산 중인 대부분의 결정질 실리콘 태양전지는 p-type 실리콘 기판의 전면에 인 (phosphorus) 을 확산시켜 에미터로 사용한 스크린 프린티드 태양전지 (Screen Printed Solar Cells) 이다. 위 태양전지의 단점은 p-type 기판의 광열화현상 (Light Induced Degradation) 문제와 후면 알루미늄 금속 전극으로 인한 휨 현상 등이 있다. 이러한 단점을 해결하기 위해 n-type 기판의 전면에 보론 (Boron) 을 도핑하여 에미터로 사용하고, 후면 전계 (Back Surface Field) 로 인 (Phosphorus)을 도핑한 태양전지에 대한 연구가 활발히 진행 중이다. 본 연구에서는, 튜브 전기로 (tube furnace) 를 이용해 n-type 실리콘 웨이퍼 전면에 보론 도핑을 하고 이와 마찬가지로 웨이퍼 후면에 인 도핑을 실시하였다. 그리고 전면과 후면의 패시베이션을 위해 얇게 산화막을 형성한 후 실리콘 질화막 (SiNx) 을 증착하였다. 에미터와 후면 전계 그리고 패시베이션 층의 특성을 평가하기 위해 QSSPC (Quasi-Steady-State PhotoConductance) 로 소수반송자 수명 (Minority Carrier Lifetime) 과 포화 전류 (Saturation current) 값을 측정하였다.

  • PDF

Enhancing the Performance of InGaN Photoelectrode by Using YAG:Ce3+@ beta-SiALON Phosphor (YAG:Ce3+@ beta-SiALON 형광체를 이용한 InGaN 광전극의 효과적인 물분해)

  • Bae, Hyojung;Lee, Daejang;Cha, An-Na;Ju, Jin-Woo;Moon, Youngboo;Ha, Jun-Seok
    • Current Photovoltaic Research
    • /
    • v.8 no.2
    • /
    • pp.50-53
    • /
    • 2020
  • GaN based photoelectrode has shown good potential owing to its better chemical stability and tunable bandgap with materials such as InN and AlN. Tunable bandgap allows GaN to make the maximum utilization of solar spectrum, which could improve photoelectrode performance. However, the problems about low photoelectrode performance and photo-corrosion still remain. In this study, we attempt to investigate the photoelectrochemical (PEC) properties of phosphor application to InGaN photoelectrode. Experimental result shows YAG:Ce3+ and beta-SiALON phosphor result in the highest photoelectrode performance of InGaN.

A Study on the Wearing Conditions of Development for Functional Snowboarding Apparel (기능성 스노보드 웨어 개발을 위한 착용실태 조사)

  • Kim, Ji-Eun;Choi, Hei-Sun;Kim, Eun-Kyong
    • Journal of the Korean Society of Clothing and Textiles
    • /
    • v.35 no.10
    • /
    • pp.1252-1263
    • /
    • 2011
  • This study examined the current state of snowboarding apparel. We investigated the preferred design, the required functions, and inconvenient factors in snowboard apparel through interviews with snowboard pro-players and questionnaires with functional apparel consumers. The research was conducted as follows. In order to raise problems through interviews with pro-snowboarders and grasp the individual traits of consumers, a survey was conducted with male and female consumers in their 20s-30s who enjoy snowboarding and those who had purchased specialized brand snowboarding apparel more than once. After the survey with consumers, this study set the classification standard for snowboard maniacs according to snowboarding frequency and classified the snowboarders into two groups. Both groups carry MP3 players most frequently in ordinary times and they preferred notable and brilliant colors and partially-used patterns (printed patterns). Through the investigation of the mobile functions that the snowboarders wanted for snowboarding apparel, it was found that the most preferred functions were those of listening to music and photo/video image-taking.

A Study on the Electrical Characteristics of Pentacene Organic Thin Film Transistor using Organic Gate Insulator (유기물 게이트 절연체를 사용한 pentacene 유기 박막 트랜지스터의 전기적 특성에 관한 연구)

  • Kim, Yun-Myoung;Kim, Ok-Byoung;Kim, Jung-Soo;Kim, Young-Kwan;Zyung, Tae-Hyung
    • Proceedings of the KIEE Conference
    • /
    • 2000.11c
    • /
    • pp.446-448
    • /
    • 2000
  • Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition (OMBD) and vacuum evaporation respectively. For the gate dielectric layer, OPTMER PC403 photo acryl (JSR Coporation.) was spin-coated and cured at $220^{\circ}C$. Electrical characteristics of the devices were investigated, where the channel length and width was $50{\mu}m$ and 5 mm. It was found that field effect mobility was $0.039\;cm^2V^{-1}s^{-1}$, threshold voltage was -7 V, and on/off current ratio was $10^6$.

  • PDF

Improving the Performances of Dye-Sensitized Solar Cell by the Optimal $TiO_2$ Photoelectrode Thickness and Light-Scattering Enhancement (최적 $TiO_2$ 전극 두께 및 광산란 증가에 의한 염료감응형 태양광전지의 효율 개선)

  • Niu, Zeng Yuan;Kweon, Hyun Kyu;Park, Chang Yong
    • Journal of the Semiconductor & Display Technology
    • /
    • v.13 no.2
    • /
    • pp.37-44
    • /
    • 2014
  • In this study, the performance of dye-sensitized solar cells with different thickness of the photelectrode film was simulated by using the electron-diffusion differential model. Through this simulation, the relationships between the thickness of the photoelectrode film and the performances (open-circuit voltage, short-circuit current density, and overall photoelectric-conversion efficiency) of cells were understood and the performances with different thickness of the photoelectrede film were also examined. For considering the refractive index in the liquid electrolyte and exploring the scattering effect of titanium dioxide particles with different sizes using the Mie light-scattering theory, the highest scattering effect of each particles was found out and the optimal size of the titanium dioxide particle was determined for light scattering in the photoelectrode film of dye-sensitized solar cell. Through experiment, the mixed titanium dioxide cell was better than the single titanium dioxide cell and generated a higher overall conversion efficiency because the optimal titanium dioxide particles in the phoelectrode film as light scattering.

An Experimental Study of Power Saving Technique in Non-thermal Plasma DeSOx/DeNOx Process (저온 플라즈마 탈황물질 공정의 운전전력 절감을 위한 실험연구)

  • 송영훈;최연석;김한석;신완호;길상인;정상현;최갑석;최현구;김석준
    • Journal of Korean Society for Atmospheric Environment
    • /
    • v.12 no.4
    • /
    • pp.487-494
    • /
    • 1996
  • Simultaneous effects of $C_2H_4$ injection and heterogeneous chemical reactions on non-thermal plasma process to remove $SO_2$ and NOx from flue gas were investigated in the present experimental study. The present results showed that 40% of the electrical power can be reduced in $C_2H_4$ injection and heterogeneous chemical reaction are simultaneously included in the non-thermal plasma precess. As an effort to apply the non-thermal plasma technique to practical flue gas treatment system, a wire-plate type reactor which has technically similar geometry of industrial electrostatic precipitators is used instead of other types of reactors, such as wire-cylinder, packed-bed and surface discharge which are inappropriate to industrial application. In the present study, the photo pictures of positive streamer corona taken by ICCD camera, voltage and current oscillograms, and design criteria of a wire-plate type reactor are also shown, which are needed for industrial application of the non-thermal plasma process.

  • PDF

Fabrication of Transparent Conductive Oxide-less Dye-Sensitized Solar Cells Consisting of Titanium Double Layer Electrodes (이중층 티타늄 전극으로 구성된 TCO-less 염료감응형 태양전지 제작에 관한 연구)

  • Shim, Choung-Hwan;Kim, Yun-Gi;Kim, Dong-Hyun;Lee, Hae-June;Lee, Ho-Jun
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.60 no.1
    • /
    • pp.114-118
    • /
    • 2011
  • Dye-Sensitized Solar Cells(DSSCs) consist of a titanium dioxide($TiO_2$) nano film of the photo electrode, dye molecules on the surface of the $TiO_2$ film, an electrolyte layer and a counter electrode. But two transparent conductive oxide(TCO) substrates are estimated to be about 60[%] of the total cost of the DSSCs. Currently novel TCO-less structures have been investigated in order to reduce the cost. In this study, we suggested a TCO-less DSSCs which has titanium double layer electrodes. Titanium double layer electrodes are formed by electron-beam evaporation method. Analytical instruments such as electrochemical impedance spectroscopy, scanning electron microscope were used to evaluate the TCO-less DSSCs. As a result, the proposed structure decreases energy conversion efficiency and short-circuit current density compared with the conventional DSSCs structure with FTO glass, while internal series impedance of TCO-less DSSCs using titanium double layer electrodes decreases by 27[%]. Consequently, the fill factor is improved by 28[%] more than that of the conventional structure.

Design and Analysis of 16 V N-TYPE MOSFET Transistor for the Output Resistance Improvement at Low Gate Bias (16 V 급 NMOSFET 소자의 낮은 게이트 전압 영역에서 출력저항 개선에 대한 연구)

  • Kim, Young-Mok;Lee, Han-Sin;Sung, Man-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.21 no.2
    • /
    • pp.104-110
    • /
    • 2008
  • In this paper we proposed a new source-drain structure for N-type MOSFET which can suppress the output resistance reduction of a device in saturation region due to soft break down leakage at high drain voltage when the gate is biased around relatively low voltage. When a device is generally used as a switch at high gate bias the current level is very important for the operation. but in electronic circuit like an amplifier we should mainly consider the output resistance for the stable voltage gain and the operation at low gate bias. Hence with T-SUPREM simulator we designed devices that operate at low gate bias and high gate bias respectively without a extra photo mask layer and ion-implantation steps. As a result the soft break down leakage due to impact ionization is reduced remarkably and the output resistance increases about 3 times in the device that operates at the low gate bias. Also it is expected that electronic circuit designers can easily design a circuit using the offered N-type MOSFET device with the better output resistance.