• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.227-227
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• 2010

기존 실리콘 박막 태양 전지는 적외선에 대한 감응도와 흡수도가 낮아서 광흡수율을 증가시킬 경우 효율의 효과적인 개선이 기대되어진다. 이를 개선하기 위해서 밴드갭이 Si에 비해 상대적으로 낮은 Ge을 도입함으로써 Si와 Ge 화합물을 형성할 경우 결정상태와 수소 함유량에 따라 밴드갭 조절이 가능하다. 또한 Ge는 Si에 비해 빛에 대한 감응도가 우수하여 광흡수율을 증가시킬수 있다. 단 SiGe 박막의 Ge 량이 일정량이상 많아질 경우 박막 내 결함 등의 생성으로 광변환 효율이 오히려 감소하므로 Ge 량의 적정화가 필요하다. 본 실험에 사용된 SiGe:H Layer는 $SiH_4$ 가스와 $GeH_4$ 가스를 혼합하여 증착하였고 증착두께는 150nm로 고정하였으며 증착장비는 PECVD를 이용하였다. 파워는 플라즈마의 방전특성을 알아본 후 최소파워를 이용하여 증착하였다. 이는 증착 시 플라즈마에 의한 박막 손상을 최소화하기 위함이다. Ellipsometry를 이용하여 박막의 두께와 optical bandgap을 측정하였다. 박막의 특성을 평가하기 위해서 STA 장비를 이용하여 dark conductivity, photo conductivity, activation energy 등을 측정하였고, MDC를 이용해 C-V 곡선을 측정하였고, 이를 terman method를 이용하여 $D_{it}$를 계산하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.108-108
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• 2010

We have generated Ne-Xe plasma in dense plasma focus device with hypocycloidal pinch for extreme ultraviolet (EUV) lithography and investigated an electron temperature. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ne-Xe(30%) gas in accordance with pressure. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature of the hypocycloidal pinch plasma focus could be obtained by the optical emission spectroscopy (OES). The electron temperature has been measured by Boltzmann plot. The light intensity is proportion to the Bolzman factor. We have been measured the electron temperature by observation of relative Ne-Xe intensity. The EUV emission signal whose wavelength is about 6~16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD) and the line intensity has been detected by using a HR4000CG Composite-grating Spectrometer.

• Journal of Korea Society of Digital Industry and Information Management
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• v.10 no.1
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• pp.55-60
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• 2014

Today, there is increasing the elderly population in rural community, and people of returning from the urban to the rural community are demand to be of high value-added agriculture. In this time, there are required to regularization, standardization, automation, for getting of production of high value crops. In this paper, we are study for automation cultivation control system design for produce high-value crops. this system were designed of two parts that one part is measure and control unit, another part is server part for database and server side control. the main controller for measurement and control is used MC9S08AW60, server for Database and server-side control was using MySQL with CentOS. The source code of control program was coding C and compile with GCC. the functions of measurement and control unit are digital input and output each 8channels and can be scan-able of 20 Bit with 2CH/Sec. Analog Output were designed that can be output of 4-20mA or 0-5V on 4channel. The Digital input and output part were designed 8-channel, and using the high speed photo coupler and relays. We showed that system is possible to measure a 20bit data width, 2Ch/sec as 8 channel analog signals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.869-873
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• 2004

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.

• Journal of Electrical Engineering and information Science
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• v.2 no.5
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• pp.65-71
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• 1997

We present heterojunction solar cells with a structure of metal/a-Si:H(n-i-p)/poly-Si(n-p)/metal for the terrestrial applications. This cell consists fo two component cells: a top n-i-p junction a-Si:Hi cell with wide-bandgap 1.8eV and a bottom n-p junction poly-Si cell with narrow-bandgap 1.1eV. The efficiency influencing factors of the solar cell were investigated in terms of simulation an experiment. Three main topics of the investigated study were the bottom cell with n-p junction poly-Si, the top a-Si:H cell with n-i-p junction, and the interface layer effects of heterojunction cell. The efficiency of bottom cell was improved with a pretreatment temperature of 900$^{\circ}C$, surface polishing, emitter thickness of 0.43$\mu\textrm{m}$, top Yb metal, and grid finger shading of 7% coverage. The process optimized cell showed a conversion efficiency about 16%. Top cell was grown by suing a photo-CVD system which gave an ion damage free and good p/i-a-Si:H layer interface. The heterojunction interface effect was examined with three different surface states; a chemical passivation, thermal oxide passivation, and Yb metal. the oxide passivated cell exhibited the higher photocurrent generation and better spectral response.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.475-475
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• 2010

We have generated Ar plasma in dense plasma focus device with coaxial electrodes for extreme ultraviolet (EUV) lithography and investigated an emitted visible light for electro-optical plasma diagnostics. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas of pressure 8 mTorr. The inner surface of the cylindrical cathode has been attatched by an acetal insulator. Also, the anode made of tin metal. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature and density of the coaxial plasma focus could be obtained by Stark broadening of optical emission spectroscopy (OES). The Lorentzian profile for emission lines of Ar I of 426.629 nm and Ar II of 487.99 nm were measured with a visible monochromator. And the electron density has been estimated by FWHM (Full Width Half Maximum) of its profile. To find the exact value of FWHM, we observed the instrument line broadening of the monochromator with a Hg-Ar reference lamp. The electron temperature has been calculated using the two relative electron density ratios of the Stark profiles. In case of electron density, it has been observed by the Stark broadening method. This experiment result shows the temporal behavior of the electron temperature and density characteristics for the focused plasma. The EUV emission signal whose wavelength is about 6 ~ 16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD). The result compared the electron temperature and density with the temporal EUV signal. The electron density and temperature were observed to be $10^{16}\;cm^{-3}$ and 20 ~ 30 eV, respectively.

• Applied Chemistry for Engineering
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• v.24 no.5
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• pp.537-543
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• 2013

In this study, the push-pull structure polymer for organic photo voHaics (OPVs) was synthesized and characterized. The poly{4,8-didodecyloxybenzo[1,2-b;3,4-b]dithiophene-alt-5,6-bis(octyloxy)-4,7-di(thiophen-2-yl)benzo[c][1,2,5]-thiadiazole} (PDBDT-TBTD) was synthesized by Stille coupling reaction using the benzothiadiazole (BTD) derivative as an electron acceptor and benzodithiophene (BDT) derivative as an electron donor. The structure of monomers and polymers was identified by $^1H-NMR$ and GC-MS. The optical, physical and electrochemical properties of the conjugated polymer were identified by GPC, TGA, UV-Vis and cyclic voltammetry. The number average molecular weight ($M_n$) and initial decomposition temperature (5% weight loss temperature, $T_d$) of PDBDT-TBTD were 6200 and $323^{\circ}C$, respectively. The absorption maxima on the film was about 599 nm and the optical band gap was about 1.70 eV. The structure of device was ITO/PEDOT : PSS/PDBDT-TBTD : $PC_{71}BM/BaF_2/Ba/Al$. PDBDT-TBTD and $PC_{71}BM$ were blended with the weight ratio of 1:2 which were then used as an optical active layer. The power conversion efficiency (PCE) of fabricated device was measured by solar simulator and the best PCE was 2.1%.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.5
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• pp.201-205
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• 2003

We synthesized dendrimers containing light switchable units, azobenzene group. And the dendrimer containing 48 pyridinepropanol functional end group, which could form a complex structure with metal ions was synthesized. To apply to the molecular level devices or data storage system using Langmuir-Blodgett(LB) film, we firstly investigated the monolayer behavior using the surface pressure-area($\pi$-A) isotherms at air-water interface. And then the surface pressure shift of monolayer by light irradiation was also measured to the dendrimer with azobezene group. As a result, the monolayer of dendrimer with azobenzene group showed the reversible photo-switching behavior by the isomerization of azobenzene group in their periphery. The samples for electrical measurement were fabricated to two types which were pure dendrimer with pyridinepropanol group and its complexes with $Pt^4+$ ions by LB method. We have studied the electrical properties of the ultra thin dendrimer LB films investigated by the current-voltage(I-V) characteristics of Metal/Dendrimer LB films/Metal(MIM) structure. And we have investigated different results in the surface activity at the air-water interface as well as the electrical properties for the monolayers of pure dendrimer with pyridinevopanol group and its complex with $Pt^4+$ ions. In conclusion, it is demonstrated that the metal ion around dendrimer with pyri야nepropanol group can contribute to make formation of network structure among dendrimers and it result from the change of electrical properties. This results suggest that the dendrimers with azobenzene group and pvridinedropanol group can be applied to high efficient nano-device of molecular level.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.156-161
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• 2007

To develop array magnetic sensors, specular-type giant magnetoresistive- spin valve (GMR-SV) film of Glass/Ta(5)MiFe(7)/IrMn(10)NiFe(5)/$O_2$/CoFe(5)/Cu(2.6)/CoFe(5)/$O_2$/NiFe(7)/Ta(5)(nm) was deposited by using a high-vacuum sputtering system. One of 15 way sensors in the area of $8{\times}8mm^2$ was Patterned a size of $20{\times}80{\mu}m^2$ in multilayer sample by Photo-lithography. All of 15 sensors with Cu electrodes were measured a uniform magnetic properties by 2-probe method. The highest magnetic sensitivity of MR and output voltage measured nearby an external magnetic field of 5 Oe were MS = 0.5%/Oe and ${\triangle}$V= 3.0 mV, respectively. An easy-axis of top-free layers of $CoFe/O_2/NiFe$ with shape anisotropy was perpendicular to one of bottom-pinned layers $IrMn/NiFe/O_2/CoFe$. When the sensing current increased from 1 mA to 10 mA, the output working voltage uniformly increased and the magnetic sensitivity was almost stable to use the nano-magnetic devices with good sensitive properties.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.545-554
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• 2003

Design of the optical modulator composed of a three-waveguide coupler and CPW traveling-wave electrodes was carried out. Switching phenomena of three-waveguide couplers were analyzed by using the coupled mode theory, and the coupling-lengths of the devices were calculated by means of the FDM. CPW traveling-wave electrodes were analysed by the CMM and SOR simulation technique in order to find the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electrolyte technique. The fabricated modulator chip was end-polished, pig-tailed and packaged in a brass mount with K-connector. The insertion loss and the switching voltage of the optical modulator were about 4㏈ and 19V, respectively. Network analyzer was used to obtain the S parameter and the corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted to be Z$_{c}$= 45 Ω, N$_{eff}$=2.20, and $\alpha$$_{0}$=0.055/cm√GHZ. The measured optical response R($\omega$) was compared with the theoretically estimated one, showing both responses agree well. The measurement results revealed that 3㏈ bandwidth turned out to be about 13 GHz.