• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
• /
• pp.605-608
• /
• 2004

A $Pt/Al_xGa_{l-x}N$ Schottky type Ultra-violet photodetector was modeled and simulated using the commercial SILVACO software program. In the carrier transport, we applied field model and other analytic model to determine the electron saturation velocity and low field mobility for GaN and $Al_xGa_{l-x}N$. A C-Interpreter function was defined to described the mole-fraction for the ternary compound semiconductor such as $Al_xGa_{l-x}N$. As comparing the simulated and experimental results, we found that the simulated result for type-1 has $15.9 nA/cm^2$ of leakage current at 5V. We confirmed a good agreement of photo-current in the UV Photo-detector, while applying the absorption coefficient and reflective index of active $Al_xGa_{l-x}N$ and other layers. There had been an intensive search for the proper refractive indices of the layers.

• 한국전기전자재료학회논문지
• /
• 제20권10호
• /
• pp.883-888
• /
• 2007

Investigation of improving the properties of UV detector which uses the wide bandgap of ZnO are under active progress. The present study focused on the design and fabrication of i-ZnO/p-inversion $layer/n^--Si$ Epi. which is characterized with very thin p-type inversion layer for UV detectors. The i-ZnO thin film for achieving p-inversion layer which was grown by RF sputtering at $450^{\circ}C$ and then annealed at $400^{\circ}C$ in $O_2$ gas for 20 min shows good intrinsic properties. High (0002) peak intensity of the i-ZnO film is shown on XRD spectrum and it is confirmed by XPS analysis that the ratio of Zn : O of the i-ZnO film is nearly 1 : 1. Measurement shows high transmission of 79.5 % in UV range (< 400 nm) for the i-ZnO film. Measurement of $V_r-I_{ph}$ shows high UV photo-current of 1.2 mA under the reverse bias of 30 V.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2006년도 전력전자학술대회 논문집
• /
• pp.188-190
• /
• 2006

본 논문에서는 국내최초로 개발에 성공한 단일용량의120kW급 계통연계형 태양광발전용 PCS에 관한 내용을 설명하고 있다. 120kW급 계통연계형 태양광발전시스템은 22.9kV의 특고압 계통전원에 연계되도록 설계되었으며, 삼상 380V를 22.9kV로 승압 연계하는 2단 절연방식을 채택하였다. 120kW급 PCS는 상용주파수 변압기 절연방식으로 3상4선식 380v 60H2 출력을 가지고 있으며, PCS 내부에 120kVA급 변압기와 리액터를 포함하고 있다. 최대출력점추종(MPPT)제어 기법으로 P&O 알고리즘을 적용하였으며, 3상 IGBT 인버터를 DSP로 제어하였다. 본 논문에서는 120kW급 단일용량 PC를 개발함에 있어, 계통연계 시험, 유,무효 전류제어 시험, 단독운전 검출 및 방지시험, 출력전류의 THD 측정 등의 결과를 보이고 있다.

• Journal of Radiation Protection and Research
• /
• 제26권3호
• /
• pp.177-181
• /
• 2001

The conversion efficiency of a cesium iodine coated micro-channel plate is studied. We use the EGS4 code to transport photons and generated electrons until their energies become less than 1keV and 10keV respectively. Among the generated electrons, the emission from the secondary electrons located within the escape depth of 56nm from the photo-converter boundary is estimated by integrating the product of the secondary electrons with a probability depending only on their geometric locations. The secondary electron emission from the generated electrons of energy higher than 100eV is estimated by the 'universal yield curve'. The sum of these provides an estimate for the secondary electron yield and we show that results of applying this algorithm agree with known experimental results. Using this algorithm, we computed secondary electron emissions from a micro-channel plate used in a gas electron multiplier detector that is currently being developed at Korea Atomic Energy Research Institute.

• 한국광학회:학술대회논문집
• /
• 한국광학회 2003년도 하계학술발표회
• /
• pp.166-167
• /
• 2003

아조벤젠 그룹의 trans-cis-trans photo isomerization 특성에 의한 광배향 (photoinduced orientation) 성질을 이용하여 아조벤젠이 함유된 폴리머박막에 표면 부조 격자 (surface relief grating)를 만드는 것은 널리 알려져 있다. 특히 최근 들어, 비선형 물질의 주기적인 배열 구조를 만들기 위해서 surface relief grating을 corona poling 하는 방법들이 연구되어 지고 있다. poling된 surface relief grating은 poling 방향으로의 azo분자의 극질서가 유도되기 때문에, $C_{{\infty}v}$점대칭을 가지는 비등방 회절 격자(anisotropic grating)가 되며 2차 비선형 특성 중의 하나인 선형 전기 광학 효과를 나타낼 수 있다. (중략)

• 약학회지
• /
• 제40권4호
• /
• pp.422-427
• /
• 1996

The anti-Ex-A IgG was specifically labeled with stable isotopes, DL-His-2,4-$d_2$, L-Phe-$d_5$, L-Trp-$d_5$, L-Tyr-2,6-$d_2$ and L-[1-$^{13}C$]Trp, by growing hybridoma cell in serum-free medium. By use of NMR spectroscopy with selectively labeled Fab fragment, we applied a paratope mapping on antigen-antibody complex. Assignments of the observed carbonyl carbon resonances have been determined by using $^{13}C$-$^{15}N$ double labeling method in order to assign the Trp resonances. Photo CIDNP was also applied to investigate the antigen-binding site(s) on the surface residues of antibody. We found that Trp 36, which is located at the $V_H$ domain, is an important residue to bind to Ex-A, however, two Tyr on the surface of anti-Ex-A IgG plays no crucial role to bind to antigen. On the basis of these results, we demonstrate that stable isotope-aided NMR strategy can be extended to molecular structural analyses of the complex of an Fab fragment and a protein antigen.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.266-272
• /
• 2002

The stochiometric mixture of evaporating materials for the ZnIn$_2$S$_4$ single crystal thin film was prepared from horizontal furnace. To obtain the ZnIn$_2$S$_4$ single crystal thin film, ZnIn$_2$S$_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 610 $^{\circ}C$ and 450 $^{\circ}C$, respectively and the growth rate of the ZnIn$_2$S$_4$ single crystal thin film was about 0.5 $\mu\textrm{m}$/hr. The crystalline structure of ZnIn$_2$S$_4$ single crystal thin film was investigated by photo1uminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of ZnIn$_2$S$_4$ single crystal thin film measured from Hall effect by van der Pauw method are 8.51${\times}$10$\^$17/ cm$\^$-3/, 291 $\textrm{cm}^2$/V$.$s at 293 $^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the ZnIn$_2$S$_4$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 0.0148 eV and 0.1678 eV at 10 $^{\circ}$K, respectively. From the photoluminescence measurement of ZnIn$_2$S$_4$ single crystal thin film, we observed free excition (E$\_$X/) typically observed only in high quality crystal and neutral donor bound exciton (D$^{\circ}$,X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively. The activation energy of impurity measured by Haynes rule was 130 meV.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.96-96
• /
• 2011

ZnO는 실온에서 3.37 eV의 큰 밴드갭 에너지와 60 meV의 높은 exciton binding energy를 가지고 있어 광소자를 만드는데 큰 관심을 얻고 있다. 또한 최근에는 ZnO를 기반으로 한 동종접합 전광소자를 만드는데 성공하였다. 그러나 소자의 성능을 높이기 위해 여러 가지 개선할 사항이 있다. 그 중에 하나는 캐리어를 잘 주입 시키기 위한 금속-반도체 접합을 구현하는 것이다. 이러한 문제를 개선하기 위해서는 ZnO 기반으로 한 낮은 비저항을 가진 소자가 필요하다. 일반적으로 n-type ZnO Ohmic 접합에서 쓰이는 금속은 Ti/Au, Ta/Au, Al/Au 등이 있다. 실험방법은 c-plane 사파이어 기판 위에 펄스 레이저 증착 방법으로 3시간 동안 $500^{\circ}C$ 환경에서 ZnO 박막을 성장하고, 표면을 고르게 하기 위해 $1000^{\circ}C$에서 1분 동안 열처리를 진행하였다. 샘플 위에 photo-resist 코팅을 한 다음 transfer length method(TLM)를 이용하기 위해 포토리소그래피 장비를 통하여 샘플을 노광하였다. 그 위에 Ti/Au (30 nm/80 nm)를 E-beam/thermal evaporation으로 증착 하였다. 이는 일반적인 반도체 공정과 Lift-off방식을 이용하여 패터닝 하였다. 샘플을 열처리하는 것은 금속과 반도체의 접촉 접착과 전기적인 성질을 개선하고 응력과 계면 결함을 감소시키기 때문에 샘플을 100, 200, 300, 400, $500^{\circ}C$에서 각각 열처리하였다. 저항을 구하기 위해 각각 열처리된 샘플과 as-deposited의 전류, 전압 특성을 측정하고, 이러한 실험 방법으로 n-type ZnO의 Ohmic 접합을 구현하는 것이 목표이다.

• E2M - 전기 전자와 첨단 소재
• /
• 제8권4호
• /
• pp.426-433
• /
• 1995

Effect of boron in GaAs have been investigated by photo induced current transient spectroscopy(PICTS). The starting material was undoped liquid encapsulated Czochralski(LEC) semi insulating GaAs and boron ion implantation at 150keV energy was conducted with dose of 10$\^$12/ and 10$\^$13/ions/cm$\^$2/. In ion implanted samples, the peaks related arsenic vacancy(V$\_$As/) were decreased but complex lattice defect was increased with annealing temperature. U band was observed at ion implanted(10$\^$13/ ions/cm$\^$2/) and thermally treated(550.deg. C) sample. More negative peak was detected after annealing at temperature between 600 and 700.deg. C. The measurement of dark current showed that the formation of B$\_$GA/-V$\_$As/, complex defect and complex lattice defect by ion implantation were a reasonable explanation for the decrease in dark current.

• 전기학회논문지
• /
• 제58권2호
• /
• pp.327-331
• /
• 2009

Nano-porous $TiO_2$ powder was fabricated using Acetylene black, applied photo voltaic device based on the Dye-sensitized Solar Cells (DSCs) was investigated experimentally. $TiO_2$-powder was fabricated using Ti-isopropoxide and 2-propanol by sol-gel combustion method. For cases of variable Acetylene black, characteristic of porosity, size of particle and crystallite of obtained $TiO_2$ nano-powder was investigated. The photovoltaic efficiency of the prepared DSCs was measured using $TiO_2$ film which prepared on each different heat treatment temperature($400^{\circ}C{\sim}700^{\circ}C$) with paste of $TiO_2$ powder. The porosity and size of particle of $TiO_2$ powder made with Acetylene black 0.4g was influenced significantly effect to DSCs characteristic. Heat treatment at $500^{\circ}C$ makes the better photovoltaic efficiency which 5.02%($J_{sc}=11.79mA/cm^2$, $V_{oc}=0.73V$, ff=0.58). The sol-gel combustion method was useful to DSCs fabrication.