• Applied Chemistry for Engineering
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• v.27 no.5
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• pp.455-466
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• 2016

Organic light-emitting diode (OLED) has drawn a lot of attention in academic and industrial fields, which has been successfully commercialized in mobile phones and TV's. In the field of lighting, unlike the existing incandescent or fluorescent lighting, OLED has distinctive qualities such as surface lighting-emission, large-area, lightweight, ultrathin, flexibility in addition to low energy use. This article introduces prominent fluorescent, phosphorescent, and luminescent materials applied to white OLED (WOLED). The understanding and systematic classification of previously studied substances are expected to be greatly helpful for the development of new luminous materials in future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.427-428
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• 2008

New high efficiency green light emitting phosphorescent devices with emission layers of [TCTA/TCTA:TAZ/TAZ]:Ir$(ppy)_3$ have been fabricated and evaluated in this paper. Among the devices having different thicknesses of TCTA:TAZ mixed layer in the total 300$\AA$-thick host of TCTA(80$\AA$)/TCTA:TAZ (50~100$\AA$)/TAZ, the device with host of TCTA(80$\AA$)/TCTA:TAZ(90$\AA$)/TAZ(130$\AA$) showed the best electroluminescent characteristics with the current density of 95 mA/$cm^2$ and luminance of 25,000 cd/$m^2$ at an applied voltage of 10V. The maximum current efficiency was 52 cd/A under the luminance of 400 cd/$m^2$.

• Journal of Information Display
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• v.12 no.1
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• pp.51-55
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• 2011

Efficient two-color-mixed white organic light-emitting diodes are presented herein by employing a sky-blue phosphorescent dopant of iridium(III)bis[4,6-(difluorophenyl)-pyridinato-N,$C^{2'}$]picolinate (FIrpic) and an orange phosphorescent dopant of bis(2-phenylquinoline)(acetylacetonate)iridium(III) ($Ir(phq)_2$acac) on the emissive layer. Very stable color variation under ${\Delta}$0.02 until a 5000 cd/$m^2$ brightness value was realized by efficient carrier control in a multi-stacked emitting layer of blue/red/blue colors. Maximum current and power efficiencies of 23.8 cd/A and 22.9 lm/W in the forward direction were obtained. With balanced emission from the two emitters, the white-light emission of high correlated color temperature of 7308K and the Commission Internationale de I'Eclairage coordinates of (0.30, 0.33) were achieved.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.224-224
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• 2016

Many researchers have been tried to improve the performance of the phosphorescent organic light-emitting diode(PHOLED) by controlling of the dopant profile in the emission layer. In this work, as shown in Fig. 1 insert, a typical red PHOLED device which has the structure of ITO/NPB(50nm)/CBP(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) is fabricated with a 5nm thick doping section in the emission layer. The doping section is formed by co-deposition of CBP and Ir(btp)2acac with a doping concentration of 8%, and it's location(x) is changed from HTL/EML interface to EML/HBL in 5nm steps. The current efficiency versus current density of the devices are shown in Fig. 1. By changing the location of doping section, as shown in Fig. 1 and 2, at x=5nm, the efficiency shows the maximum of 3.1 cd/A at 0.5 mA/cm2 and it is slightly decreased when the section is closed to HTL and slightly increased when the section is closed to HBL. If the doping section is closed to HTL(NPB) the excitons can be quenched easily to NPB's triplet state energy level(2.5eV) which is relatively lower than that of CBP(2.6eV). Because there is a hole accumulation at EML/HBL interface the efficiency can be increased slightly when the section is closed to HBL. Even the thickness of the doping section is only 5nm,. the maximum efficiency of 3.1 cd/A with x=5 is closed to that of the homogeneously doped device, 3.3 cd/A, because the diffusion length of the excitons is relatively long. As a result, we confirm that the current efficiency of the PHOLED can be improved by the doping profile optimization such as partially, not homogeneously, doped EML structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.36-36
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• 2008

Organic light-emitting device (OLED) have become very attractive due to their potential application in flat panel displays. One important problem to be solved for practical application of full-color OLED is development of three primary color (Red, Green and Blue) emitting molecule with high luminous operation. Particularly, the development of organic materials for blue electroluminescence (EL) lags significantly behind that for the other two primary colors. For this reason, Flu-Si was synthesized and characterized by means of high-resolution mass spectro metry and elemental analyses. Flu-Si has the more wide optical band gap (Eg = 3.86) than reference material (Cz-Si, Eg = 3.52 eV). We measured the photophysical and electrochemical properties of Flu-Si. The HOMO-LUMO levels were estimated by the oxidation potential and the onset of the UV-Vis absorption spectra. The EL properties were studied by the device fabricated as a blue light emitting material with FIrpic.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.983-987
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• 2010

In order to investigate the emission characteristics of the phosphorescent white organic light-emitting diodes (PHWOLEDs) according to various hole transport layers (HTLs), PHWOLEDs composed of HTLs whose structure are NPB/TCTA, NPB/mCP and NPB/TCTA/mCP, two emissive layers (EMLs) which emit two-wavelengths of light (blue and red), and electron transport layer were fabricated. The applied voltage, power efficiency, and external quantum efficiency at a current density of $1 mA/cm^2$ for the fabricated PHWOLEDs were 7.5 V, 11.5 lm/W, and 15%, in case of NPB/mCP, 5 V, 14.8 lm/W, and 13.7%, in case of NPB/TCTA, and 5.5 V, 14.6 lm/W, and 15%, in case of NPB/TCTA/mCP in the hole transport layer, respectively. High emission efficiency can be obtained when the amount of hole injection from anode is balanced out by the amount of electron injection from the cathode to EML by using NPB/TCTA/mCP structured HTL.

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.93-97
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• 2013

We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with co-doping and blue/co-doping emitting layer (EML) structures were fabricated using a host-dopant system. The total thickness of light-emitting layer was 25 nm and the dopant of blue and red was FIrpic and $Bt_2Ir(acac)$ in UGH3, respectively. In case of co-doping structure, applying micro lens array film showed efficiency improvement from the current efficiency 78.5 cd/A and power efficiency 40.4 lm/W to the current efficiency 131.1 cd/A and power efficiency 65 lm/W and blue / co-doping structure showed efficiency improvement from the current efficiency 43.8 cd/A and power efficiency 22 lm/W to the current efficiency 69 cd/A and power efficiency 32 lm/W.

• Applied Chemistry for Engineering
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• v.32 no.2
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• pp.180-189
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• 2021

N-Heteroaryl carbazoles were synthesized with thermal heating in the presence of Cu(I) catalyst and used as main ligands for the preparation of heteroleptic Ir(III) complexes. In these Ir(III) complexes, 6-membered ring structures of Ir-ligand chelation were found by single crystal X-ray diffraction. The blue shift of photoluminescence for Ir(III) complexes was observed in the case of the strong bond formation between Ir and ancillary ligands. It also has been clearly shown that the higher electron density of heteroaryl aromatic ring influenced shorter maximum photoluminescence wavelength (λmax) of Ir(III) complexes. Since the new Ir(III) complexes showed good phosphorescent emission, they could be potentially used as OLED materials in the emission Layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.454-457
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• 2008

We report the syntheses, photophysical properties and device performances of solution processible host material for green-phosphorescent OLEDs. The butterfly-shaped new host materials with nonconjugated linkage of carbazole and fluorene moieties have large triple energy band gap around 2.8 eV. All of the EL devices exhibited turn-on voltages in the range of 4.8-5.0 V. GH-4 exhibited the best performance with a maximum current efficiency and power efficiency of 21.1 cd/A and 7.9 lm/W.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1010-1013
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• 2006

To understand the exact charge carrier photogeneration properties of photoactive thin films consisting of a ${\pi}-conjugated$ polymer matrix and a triplet dopant, we prepared two types of polymer, poly(9-vinylcarbazole) (PVK) and poly[9,9-bis(2- ethylhexyl)fluorene-2,7-diyl] (PF2/6) doped with triplet emitters for organic light-emitting diodes (OLED), either iridium(III)fac-tris(2-phenylpyridine) $(Ir(ppy)_3)$ or iridium(III)bis[(4,6-fluorophenyl)- $pyridinato-N,C^2'$]picolinate (FIrpic), as thin film devices by using the conventional method. Those doped film devices, as well as pristine film devices, on ITO substrates were characterized by means of steady state photocurrent measurement for a wide spectral range.