• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1386-1389
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• 2006

In this study, a plasma flat fluorescent lamp having a new structure was fabricated by screen printing technique. Coplanar types of silver electrodes with a dielectric layer were screen-printed on a rear glass plate, and then fired at $550^{\circ}C$ and $580^{\circ}C$, respectively. Phosphor was spin-coated on the dielectric layer with firing at $490^{\circ}C$. Several types of lamps were designed and its properties wee investigated with electrode shape, gas pressure, etc.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.101-105
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• 1994

The EL lamp have been fabricated by screen printing method. the thickness of BaTiO$_3$ dielectric layer and ZnS:Cu phosphor layer was 20 $\mu$m and 40 $\mu$m, respectively. The threshold voltage of green El lamp was 50 $V_{p-p}$ and the maximum brightness was 13.5 $\mu$ W/cm$^2$ at frequency of 700 Hz and the input voltage of 250 $V_{p-p}$. Also when the Rodamin G6 of 0.02 g was doped, the threshold voltage of white EL lamp was 70 $V_{p-p}$ and the maximum brightness was 34 $\mu$W/cm$^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.37-38
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• 2000

The ZnS:Tb thin-film electroluminescent devices were grown by atomic layer deposition with utilizing single-layer aluminum oxide and/or multilayered tantalum aluminum oxide, $Ta_xAl_yO$, as upper and lower insulating layers. These devices were investigated in terms of the luminescent and electrical characteristics. From this analysis, the devices using the $Ta_xAl_yO$ instead of $Al_2O_3$ were observed to have a lower threshold voltage for emission due to the higher relative dielectric constant of $Ta_xAl_yO$ insulators than that of the $Al_2O_3$ device. And there was a large amount of dynamic space charge generation in the phosphor of the device with the $Ta_xAl_yO$ insulators seemingly due to electron multiplication such as trap ionization.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.149-150
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• 2000

Lead-doped calcium sulfide(CaS:Pb) thin film electroluminescent devices were deposited using atomic layer deposition(ALD). CaS:Pb is a very promising blue phosphor showing very high luminance and the color coordinate close to the blue of cathode ray tube. The luminance, $L_{25}$, of CaS:Pb(1.6 mol.%) EL device was higher than 80 $cd/cm^2$ at a driving frequency of 60Hz. The color coordinates of blue EL emission of CaS:Pb deposited by ALD are consistent with the Pb concentration ranging from approximately 0.5 to 3 mol.%.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.497-499
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• 2000

The characteristics of Xe discharge lamp are described in this paper. In this paper, FFL is changed discharge space dimensions like discharge space gap, phosphor layer and dielectric layer thickness to find FFL with high efficiency.

• Journal of the Optical Society of Korea
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• v.17 no.6
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• pp.506-512
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• 2013

Recently, the color separation issue of wide-spreading white LEDs has attracted attention due to their wide applicability as light sources in direct-lit LCD backlights. These wide-spreading LED packages usually consist of LED chips, a color-conversion phosphor layer, and a light-shaping lens. The technical aspect of this color issue was related to a method for balancing the yellow spectral component emitting from phosphors with respect to the blue one from the LED chip as a function of viewing angle. In this study, we suggested an approach for carrying out quantitative analysis for the color separation problem occurring in wide-spreading LED packages by optical simulation. In addition, the effect of an internal scattering layer on the color uniformity was investigated, which may be considered as a potential solution for this problem.

• Korean Journal of Materials Research
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• v.22 no.2
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• pp.103-109
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• 2012

Red-emitting $Eu^{3+}$-activated $(Y_{0.95-x}Al_x)VO_4$ (0 < x $\leq$ 0.12) nanophosphors with the particle size of ~30 nm and the high crystallinity have been successfully synthesized by a hydrothermal reaction. In the synthetic process, deionized water as a solvent and ethylene glycol as a capping agent were used. The crystalline phase, particle morphology, and the photoluminescence properties of the excitation spectrum, emission intensity, color coordinates and decay time, of the prepared $(Y_{0.95-x}Al_x)VO_4:Eu^{3+}$ nanophosphors were compared with those of the $YVO_4:Eu^{3+}$. Under 147 nm excitation, $(Y_{0.95-x}Al_x)VO_4$ nanophosphors showed strong red luminescence due to the $^5D_0-^7F_2$ transition of $Eu^{3+}$ at 619 nm. The luminescence intensity of $YVO_4:Eu^{3+}$ enhanced with partial substitution of $Al^{3+}$ for $Y^{3+}$ and the maximum emission intensity was accomplished at the $Al^{3+}$ content of 10 mol%. By the addition of $Al^{3+}$, decay time of the $(Y,Al)VO_4:Eu^{3+}$ nanophosphor was decreased in comparison with that of the $YVO_4:Eu^{3+}$ nanophosphor. Also, the substitution of $Al^{3+}$ for $Y^{3+}$ invited the improvement of color coordinates due to the increase of R/O ratio in emission intensity. For the formation of transparent layer, the red nanophosphors were fabricated to the paste with ethyl celluloses, anhydrous terpineol, ethanol and deionized water. By screen printing method, a transparent red phosphor layer was formed onto a glass substrate from the paste. The transparent red phosphor layer exhibited the red emission at 619 nm under 147 nm excitation and the transmittance of ~80% at 600 nm.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.1
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• pp.8-12
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• 2002

In this paper, we studied a flat fluorescent lamp with high luminance for LCD backlighting. The lamps have simple structures with ITO glass, insulator layer, phosphor layer, electrode layer and gas gap. The firing voltage was decreased with increasing the frequency. It was considered that this tendency was resulted from the space charge effect due to Xe and Ar positive ions trapped in gas gap. Decrease of uniform voltage at higher drive frequency is due to the remaining space charges which are produced by preceding period. As a result, luminance of 2700[cd/m$^2$] and maximum luminous efficiency of 51[m/W] were obtained with luminance uniformity of 96[%] in operation(700[V$\_$rms/], 80[kHz].

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.4-8
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• 2002

The typical mold method for FED (field emission display) fabrication is used to form a gate electrode, a gate oxide layer, and emitter tip after fabrication of a mold shape using wet-etching of Si substrate. However, in this study, new mold method using a side wall space structure was developed to make sharp emitter tips with the gate electrode. In new method, gate oxide layer and gate electrode layer were deposited on a Si wafer by LPCVD (low pressure chemical vapor deposition), and then BPSG (Boro phosphor silicate glass) thin film was deposited. After then, the BPSG thin film was flowed into the mold at high temperature in order to form a sharp mold structure. TiN was deposited as an emitter tip on it. The unfinished device was bonded to a glass substrate by anodic bonding techniques. The Si wafer was etched from backside by KOH-deionized water solution. Finally, the sharp field emitter array with gate electrode on the glass substrate was formed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.75-78
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• 2003

In recent years, there has been keen interest in developing flat panel detectors for all modalities of radiology, including gerneral radiology, fluoroscopy, electronic portal imaging, and mammography. In this paper, we report the new hybrid x-ray detector consisted of ZnS(Ag) photoemission layer and a-Se photoconductor layer to resolve problem of conventional x-ray detector such as the direct detector and the indirect detector. To design the structure of ZnS(Ag)/a-Se detector, the penetrated energy spectrum and absorption fraction was estimated using MCNP 4C code. Also, we carried out the experiment to demonstrate the result of MCNP 4C code. Experimental results showed that the absorption fraction of $500{\mu}m$-ZnS(Ag) film was above 87%, 75% at 60 and 80 kVp. As a results, we can determined the thickness of suitable phosphor and the thickness of photoconductor.