• 전자공학회논문지
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• 제51권12호
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• pp.189-194
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• 2014

본 연구에서는 새로운 구조의 X선 영상 검출기로써 광민감 $HgI_2$ 층이 포함된 CsI:Na 형광층의 구조를 설계하였다. 이러한 구조에서 X선은 두꺼운 CsI:Na 층에서 가시광선으로 변환된 후 하부의 얇은 $HgI_2$ 층에서 전하로 변환된다. CsI:Na와 $HgI_2$로 구성된 복합구조의 두께를 최적화하기 각 층의 두께를 변화시켜 X선에 대한 흡수효율을 시뮬레이션 하였다. 현재 상용화된 a-Se 단일층의 검출기는 수십 kV의 고전압이 요구되고, CsI:Na/a-Si 구조의 간접변환 방식은 낮은 변환효율을 가지는 단점이 있다. 본 연구의 결과로 제시된 새로운 형태의 CsI:Na/$HgI_2$ 복층 구조의 x-ray 검출기는 고전압이 필요한 직접 변환방식의 단점과 간접 변환방식의 낮은 효율을 보완할 수 있을 것으로 생각된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.223-227
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• 2003

In this study, ultrasonic rotary motors using a bolted langevin type ultrasonic vibrator were designed and fabricated. The stator vibrator has a longitudinal transducer section composed of two metal blocks and two piezoelectric ceramic elements (thickness-polarized) and a mode conversion metal block section called a torsion coupler. And, three kinds of motors were studied by finite element analysis and experiments. So, as material of torsion coupler which generate mode conversion of vibration copper, brass, and phosphor bronze were used. As a result, speed and torque were changed in proportion to the electrical input Voltage, but it was saturated in high voltage. And bad efficiency which was different from a expectation was measured in this motors. So, various problems should be improved for practical use. Finally, The motor which has 1 [cm] diameter was fabricated to present a possibility of miniaturization of this type motors.

• Current Optics and Photonics
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• 제1권4호
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• pp.284-288
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• 2017

In order to investigate the ultraviolet-excited photoluminescence properties of phosphor coatings and their relationship to thickness, Lumogen coatings with different thicknesses were deposited on quartz substrates and charge-coupled device chips by thermal evaporation. The variation of the film thickness affected the crystallite size, surface roughness and fluorescence signal. It was found that the Lumogen coating with the thickness of 420 nm has the largest luminescent signal and conversion efficiency, and the corresponding coated charge-coupled devices had the maximum quantum efficiency in the ultraviolet. These results provided one key parameter for improving the sensitivity of Lumogen coated charge-coupled devices to ultraviolet light.

• Korean Chemical Engineering Research
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• 제49권3호
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• pp.320-324
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• 2011

TOPO/TOP로 안정화된 CdSe 반도체 발광 나노입자를 용해열 방법을 이용하여 합성하였다. 합성 온도 및 시간 조절을 통하여 540 nm 녹색 발광과 620 nm 적색발광 CdSe 나노입자를 얻었다. 형광체 변환 백색 발광다이오드(LED)는 460 nm 발광 InGaN 발광다이오드(LED) 여기원(excitation)과 540, 620 nm 발광 CdSe 나노입자 형광체를 결합하여 제작하였다. CdSe 나노입자 형광층은 녹색과 적색이 혼합된 단층과 분리된 다층구조로 이루어졌으며, 형광층 구성에 따른 백색 LED 소자의 특성 차이를 비교하였다. 단층구조 백색 LED는 20 mA에서 5.78 lm/W의 효율을 가지며, 형광층 내에서의 에너지 전이로 인하여 적색광이 강한(0.36, 0.45)의 색좌표를 보였다. 반면 다층 구조 백색광 LED는 20 mA에서 7.28 lm/W의 효율과 순수 백색광 영역인(0.32, 0.34)의 색좌표를 나타냈다. 또한, 400 nm의 청자색 LED를 여기원으로 적용 시, 소자의 효율이 8.76 lm/W로 증가하였다.

• 한국방사선학회논문지
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• 제3권4호
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• pp.35-38
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• 2009

최근 의료영상분야에서 형광체와 광도전체 물질을 이용한 디지털 평판형 X선 영상검출기가 폭넓게 이용되고 있다. 본 연구는 CsI:Na 형광체층과 광민감도가 우수한 비정질 셀레늄(a-Se)층의 이중 접합구조로 구성된 변환구조 설계를 위한 몬테카를로 시뮬레이션과 X선에 대한 광학적 및 전기적 반응특성을 조사하였다. 먼저 CsI:Na의 발광스펙트럼과 a-Se의 광흡수 스펙트럼을 측정하여 X선에 의한 신호 변환특성을 분석하였다. 또한, 인가전기장의 함수에 따른 X선 민감도을 측정하여 상용화된 a-Se($500{\mu}m$)의 직접변환 검출기와 비교 평가하였다. 측정결과로부터, $10V/{\mu}m$에서 CsI:Na($180{\mu}m$)/a-Se($30{\mu}m$) 변환센서의 X선 민감도는 $7.31nC/mR-cm^2$ 이고, a-Se($500{\mu}m$) 검출기는 $3.95nC/mR-cm^2$로 약 2배 정도 높은 값을 보였다.

• 조명전기설비학회논문지
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• 제26권12호
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• pp.1-8
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• 2012

The performance and lighting characteristics of the LED depend on cooling condition because the power LED generates lots of heat. In this paper, the effect of the generated heat from power LED module on lighting characteristics and performance is measured and evaluated. For experiments, the transient temperature of a power LED module with cooling condition is measured. In addition, the temperature and lighting characteristics of the LED module are measured during the steady state. As a result, the cooling condition is less effective on the lighting characteristics of the LED module at rated current but the cooling condition extremely affects those of the LED module over the rated current. Because high temperature of the power LED module causes the low phosphor conversion, luminance efficiency becomes low and color temperature becomes high. When power LED module are driven over the rated condition, higher temperature is directly related to lighting characteristics and performance of the LED module rather than higher current.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.438-438
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• 2011

White light-emitting diodes (LEDs), the so-called next-generation solid-state lighting, offer benefits in terms of reliability, energy-saving, maintenance, safety, lead-free, and eco-friendly. Recently, rare-earth-doped oxynitride or nitride compounds have attracted a great deal of interest as a photoluminescent material because of their unique luminescent property, especially for white LEDs applications. Ce doped ${\beta}$-SiAlON has been studied as a wavelength conversion phosphor in white LEDs thanks to its high absorption rates, high quantum efficiency, and excellent thermal stability. Previously researches were not enough to understand the detail mechanism and characteristics of ${\beta}$-SiALON. The bandgap structures and electronic structures were not exact due to limitation of calculation methods. In this study, to elucidate the Ce doping effect on the SiAlON system, accurate band structures and electronic structure of the Ce doped ${\beta}$-SiAlON was intensively investigated using density functional theory calculations. In order to get a better description of the band gaps, MBJLDA method were used. We have found a single Ce atom site in ${\beta}$-SiAlON super cell. Furthermore, the density of state, band structure and lattice constant were intensively investigated.

• 한국의학물리학회지:의학물리
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• 제21권3호
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• pp.261-273
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• 2010

간접변환방식 CMOS (complementary metal-oxide-semiconductor) 엑스레이 디텍터 시스템의 성능 분석 및 개선을 위하여 공간주파수에 따른 DQE (detective quantum efficiency)를 모델링 하였다. 모델의 검증을 위하여 마모그라피 W/Al 선질에 대한 modulation-transfer function (MTF), noise-power spectrum (NPS)를 측정하고 이로부터 DQE를 계산하였으며, 모델과 측정된 DQE는 전체 공간주파수 영역에서 서로 잘 일치함을 확인하였다. 검증된 모델을 이용하여 형광스크린 양자효율 및 MTF, Swank 잡음, 포토다이오드 양자효율 등 CMOS 디텍터 시스템의 DQE 성능에 영향을 미칠 수 있는 다양한 디자인 파라미터의 역할을 살펴보았다. 엑스레이 디텍터 시스템의 신호 및 잡음 분석에 대해 이와 같은 선형시스템 전달을 이용한 이론적인 접근법은 이미 개발된 의료영상시스템을 이해할 수 있는 유용한 도구일 뿐만 아니라 새로운 디텍터 개발 및 최적화를 위한 도구로 활용될 수 있을 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.440-443
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• 2002

Present1y the X-Ray diagnosis system is a real condition that is changing by digital ways in it's existent analog ways. This digital radiation detector is divided by the direct method and the indirect method. The indirect method of applied voltage has special qualities that the resolution is low than direct method by diffusion effect that happens. The conversion process ( radiation${\rightarrow}$visible ray${\rightarrow}$electrical signal of two times, has shortcomings that the energy conversion efficiency of electrical signal is low. The direct method has shortcomings that need strong electric fie1d to detect electrical signal efficiently. This research achieved to develop digital detector of the Hybrid method that have form that mixes two ways to supplement shortcoming of direct. indirect method. A studied electrical characteristic by Iodine's Mixture ratio change is added to selenium in the detector which has a multi-layer structure (Oxybromide + a-Se). There are 8 kinds of Manufactured compositions to amorphous selenium Iodine each 30ppm, 100ppm, 200 ppm, 300ppm, 400ppm, 500ppm, 600ppm, 700ppm by a doped photoconductor through a vacuum thermal evaporation method. The phosphor layer is consisted of Oxybromide ($BrO_2$) which uses optical adhesives multi-layer structure. The manufactured compositions calculates and compares Net Charge and signal to noise ratio measuring Photocurrent about Darkcurrent and X-ray. When doped Iodine Mixture ratio is 500ppm to the multi-layer structure (Oxybromide + a-Se), applied voltage of $3V/{\mu}m$, leakage current of compositions $2.61nA/cm^2$ and net charge value by 764pC/$cm^2$/mR then the best result appeared.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.86-86
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• 2012

The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.