• Journal of Information Display
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• v.13 no.2
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• pp.91-95
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• 2012

Indium phosphide (InP) quantum dots (QDs) are considered alternatives to Cd-containing QDs for application in light-emitting devices. The multishell coating with ZnSe/ZnS was shown to improve the photoluminescence quantum yield (QY) of InP QDs more strongly than the conventional ZnS shell coating. Structural proof for this system was provided by X-ray diffraction and transmission electron microscopy. QY values in the range of 50-70% along with peak widths of 45-50 nm can be routinely achieved, making the optical performance of InP/ZnSe/ZnS QDs comparable to that of Cd-based QDs. The fabrication of a working electroluminescent light-emitting device employing the reported material demonstrated the feasibility of the desired application.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.294-297
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• 2000

Boron Phosphide films were deposited on the glass substrate at low temperature, 550$^{\circ}C$, by the reaction of B$_2$H$\sub$6/ with PH$_3$ using CVD. N$_2$ was employed as carrier gas. The deposition rate was 1000${\AA}$/min and the refractive index of film was 2.6. The data of XRD show that the film has the preferred orientation of (1 0 1). The VIS spectrophotometer's data proved that the films are transparent in the visible range. Also, we performed AFM, FT-IR measurement. To investigate the annealing effect, the samples were annealed for 1hour, 3hours at 550$^{\circ}C$ and tested.

• Applied Biological Chemistry
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• v.32 no.3
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• pp.265-269
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• 1989

Effects of air-tighteness of packing material and aluminum phosphide fumigation on mortality of rice weevil were studied during rice storage. Air-tight storage of rice in sealed bag of 0.1mm PE film or sealed glass bottle reduced the deterioration of rice quality and killed all rice weevils after 60 days storage, while paper bag, PP bag and straw bag storage kept them alive. One tablet of aluminum phosphide in one cubic meter heap of rice packed in PP bag was sufficient to kill all rice weevil in it, when the heap was covered by 0.15 mm PE film during fumigation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.103-107
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• 2000

Boron Phosphide films were deposited on the glass substrate at the low temperature, 55$0^{\circ}C$, by the reaction of B$_2$H$_{6}$ with PH$_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 50 $m\ell$/min for B$_2$H$_{6}$, 50 $m\ell$/min for PH$_3$ $m\ell$/min and 1.5 $\ell$/min for $N_2$. To investigate the annealing effect, the films were annealed for 1hour, 3hours in $N_2$ambient at 55$0^{\circ}C$ and tested. The deposition rate was 1000$\AA$/min and the refractive index of film was 2.6. The measurement of X-RD shows that the films have the preferred orientation of (1 0 1) and the intensity of the peak for (1 0 1) orientation decreases according to the annealing time. The data of VIS spectrophotometer proved that the films are transparent in the visible range and the maximal transmittance increases according to the annealing time; 75.49% for as-deposited, 76.71% for 1hr-annealed and 86.4 % for 3hrs-annealed. The measurement of AFM shows that the average surface roughness increases according to the annealing time; 73$\AA$ for as-deposited, 88.9$\AA$ for 1hr-annealed and 220$\AA$ for 3hrs-annealed. Also, The data of the secondary electron emission rate(Υ) shows that the secondary electron emission rate increases according to the annealing time; 0.317 for 1hr-deposited, 0.357 for 1hr-annealed and 0.537 for 3hrs-annealed. And, The measurement of FT-IR that the characteristic of transmittance in the infrared range was stabilized through annealing.ing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.332-335
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• 2004

Boron Phosphide films were deposited on(III) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 20 ml/min for $B_2H_6$, 60 ml/min for $PH_3$ ml/min and $1{\ell}/min$ for $N_2$. The films were annealed for 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is each $10.108{\AA}$ and $29.626{\AA}$. So, we could know every commonplace thing. The measurement of XRD shows that the films have the preferred orientation of(1 0 1). From SEM images, we could see that Boron Phosphide is showed of a structure, which is grain size, which is grain boundary size. Also, the measurement of AES is shown the films have $B_{13}P_2$ Stoichiometry. From WDX See that ingredient is detected each Boron and Phosporus. So, we could see that deposited BP thin film. In this study, we obtained the BP thin film by deposited in atmosphere pressure, and known to applicate as microwave absorbtion material of BP thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.243-246
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• 2004

Boron Phosphide films were deposited on (111) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with PH, using APCVD. $N_2$ was carried out as carrier gas. The optimal gas rates were 20 ml/min for B2H6, 60 ml/min for PH3 and 1 l/min for N2. After as grown the films were insitu annealed fur 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is $10.108{\AA}$ for the reaction temperature at $450^{\circ}C$ and $29.626{\AA}$ fur the reaction temperature at $650^{\circ}C$. The measurement of XRD shows that the films have the orientation of(1 0 1). Also, the measurement of AES is shown that the films have $B_{13}P_2$ stoichiometry. For the Result of microwaves absorbtion properties using VNA, it obtained the permittivity of BP about 8 between $1.5{\sim}2.5GHz$. In this study, it obtained the BP thin film by deposited in atmosphere pressure And BP thin film can be after to applicate as microwave absolution material is obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.88-90
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• 2005

Boron Phosphide films were deposited on (111) Si substrate at 650 $^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using APCVD. $N_2$ was carried out as carrier gas. The optimal gas rates were 20 m$\ell$/min for $B_2H_6$, 60 m$\ell$/min for $PH_3$ and 1 $\ell$/min for $N_2$. After as grown the films were insitu annealed for 1hour in N$_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the RMS is $29.626{\AA}$ for the reaction temperature at 650$^{\circ}C$. The measurement of XRD shows that the films have the orientation of (101). Also, the measurement of AES is shown that the films have $B_{13}P_2$ stoichiometry.

• Journal of Korea Foundry Society
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• v.13 no.4
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• pp.333-341
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• 1993

The effects of alloying elements on the structure and mechanical properties of compacted/vermicular graphite cast irons containing copper, tin and molubdenum for producing pearlite matrix, and also containing phosphorus and boron for increasing wear resistance, were investigated. The Brinell hardness and ultimate tensile strength of the specimens with the range of compositions, [1.5% Cu-0.05% Sn-(0.2-0.4)% Mo-(0.2-0.6)% P-(0.035-0.070)% B], was found to fall within in the following range, depending on their composition; Brinell hardness of BHN 250-315, ultimate tensile strength of $28.1-40.3kg/mm^2$. It was also found within this experiment that CV graphite cast irons possessing higher amount of phosphide eutectic exhibit better wear resistance, but the wear resistance became deteriorate when the area fraction of phosphide eutectics exceed more than 10%. From these experimental results, it could be concluded that the CV graphite cast iron containing 1.5% Cu, 0.05% Sn, 0.4% Mo, 0.2% P and 0.035% B showed good mechanical and wear resistance properties.

• Journal of Periodontal and Implant Science
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• v.27 no.2
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• pp.329-346
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• 1997

Dental implants have been developed for enhancement of osseointegration. Biocompatibility, bone affinity and surface characteristics of dental implants are very important factors for osseointegration. The aim of the present study was to determine the cytotoxicity and the bone affinity of titanium phosphide(Ti-P) implant material. The Ti-P surface was obtained by vacuum sintering of titanium within compacted hydroxyapatite powder. The composition and the chemical change of the surface were determined by Auger electron spectroscopy. The in vitro cytotoxicity was evaluated by the viability of the bone cells and macrophages obtained from chicken embryo and rat,s peritonium, respectively. For the comparative evaluation, 316L stainless steel, commercially pure titanium and Ti-P materials, prepared in size of 1O.0mm in diameter and 5.0mm in height, were immersed separately in bone cells and macrophages for 10 days. For the evaluation of the in vivo bone affinity, 316L stainless steel, commercially pure titanium and Ti-P materials, prepared in size of 5.0mm in diameter and 10.0mm in length, were implanted after drilling in diameter 5.5mm in femurs of 2 dogs weighing 10Kg more or less. Six weeks after implantation the specimens were prepared for histopathological examination and were observed under light microscope. In comparison of in vitro bone cell viability, Ti-P and commercially pure titanium groups were not significantly different from control group (p>O.1), but 316L stainless steel group was significantly lower than control group(p<0.05). There was no statistical difference in the viability of macrophages between 3 different groups and control group(p>O.l). In comparison of in vivo study, 316L stainless steel and commercially pure titanium showed fibrous encapsulation, but Ti-P showed remarkable new bone formation without any fibrous tissue. The results demonstrate that Ti-P has favorable biocompatibility and bone affinity, and suggest that dental implants with Ti-P surface may enhance osseointegration.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.83.2-83.2
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• 2010

최근, 원유 가격의 상승으로 인해 태양에너지에 대한 관심이 크게 증가되고 있다. 그러나 이러한 태양전지용 Si(SoG-Si)의 대부분을 차지하는 태양전지급 다결정 실리콘 원료를 대부분 수입에 의존하고 있는 실정이다. 이에 대한 기술적 대응으로서 최근에는 고비용의 기상법을 해결하기 위하여 야금학적인 정련법을 이용한 제조기술 개발이 세계적으로 주목받고 있으며, 야금학적 정련기술은 지적재산권에 관한 기술적 배타성을 제고 할 수 있을 뿐 만 아니라 기상법의 Si 대비 낮은 품위 에도 불구하고 태양전지용 실리콘의 사용가능성을 제시함으로서 활발한 연구와 함께 실용화기술로 대두되고 있다. 그러므로 본 연구는 기존 사용 중인 고가의 기상법 폴리실리콘 제조와 달리, 생산 가격경쟁력이 있는 규석광으로부터 고순도금속 및 태양전지급 폴리실리콘 생산 연속 종전기술을 개발하고자 하였다. 금속급 Si(이하 MG-Si)으로부터 경제적인 SoG-Si을 제조하기 위한 공정 개발을 일환으로 MG-Si 중 불순물인 P 원소를 효과적으로 정련할 수 있는 슬래그 정련기술 개발과 슬래그설계 기술개발을 기본목표로 설정하여 고찰하였다. 용융 Silicon과 슬래그계면에 설정되는 산소분압제어에 따른 슬래그의 P의 이온 안정성을 변화시킴으로서, MG-Si중 P를 분리제거를 기본개념으로 설정하였다. 염기성 산화물로 산소이온이 공급됨을 이용하여 염기도에 따른 분배비를 고찰한 결과, CaO의 활동도가 증가함에 따라 슬래그 중 $O^{2-}$의 활동도와 함께 phosphide 이온의 안정성이 증가함을 확인하였다. 그리고 슬래그로부터 실리콘 중 Ca의 용해도에 따른 분배비를 확인하기 위해 실험 후 Si에서 Ca의 성분을 분석한 결과, 실리콘 중 Ca 용해도는 염기도($a_{CaO}/\sqrt{a_{SiO_2}}$)의 증가와 함께 증가하였으며, Ca의 용해도 증가는 탈린능을 증가시킨다는 것을 알 수 있었다. 또한 수소분압을 변화시켜 인의 증기압변화 및 기화정련 효과를 알 수 있었으며, acid leaching을 통해 잔존해있는 불순물을 추가적으로 정련될 수 있는 가능성을 확인할 수 있었다.