• 제목/요약/키워드: Phonon

검색결과 297건 처리시간 0.023초

Phonon modes in Ga(As,N)

  • 유세기;성맹제
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2004년도 제27회 학술발표회 초록집
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    • pp.130-130
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    • 2004
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Raman Study of Individual InGaAs Nanowires

  • 김한울;노희석;이은혜;배민환;송진동
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.370-370
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    • 2012
  • 성장 길이 방향으로 조성비가 점차 바뀌는 InxGa1-xAs 나노와이어에 대한 라만 산란 연구 결과를 보고한다. Si 기판 위에 Au 입자를 뿌린 후에 이를 촉매로 하여 molecular beam epitaxy 방법을 이용하여 InGaAs 나노와이어를 성장시켰다. 투과전자현미경 실험 결과에 의하면 InGaAs 나노와이어의 길이는 약 $3{\sim}5{\mu}m$, 두께는 약 20~50 nm 정도였다. 성장 길이 방향으로 조성비의 변화를 연구하기 위해서 나노와이어에 대한 공간 분해된 라만 산란 실험을 수행 하였다. 실험 결과 나노와이어의 길이 방향으로 InAs-like transverse optical (TO) phonon 에너지와 GaAs-like TO phonon 에너지의 변화가 있었으며 이를 통해 성장 길이 방향으로 In과 Ga의 조성비의 변화가 있음을 알 수 있었다. 각각의 광학 포논 에너지에 대한 분석을 통해 조성비의 변화에 대한 정량적인 수치를 얻을 수 있었다.

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알루미나 나노 Particle의 분산 평가 및 최적화

  • 박국효;신효순;여동훈;홍연우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.251-251
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    • 2009
  • The generation of energy and the cooling of system using thermoelectric semiconductor material have been in spotlight. Thermoelectric effect increases with the decrease of the thermal conductivity. In the thermoelectric devices, thermal conductivity is related to phonon scattering. Therefore, few studies have been conducted in the thermoelectric materials dispersed nano oxide particle for increasing the phonon scattering. However, core-shell structure which nano particle disperses in solvents and then which thermoelectric materials coated on the nano oxide particles has not been reported. In this study, we selected commercial nano powder such as $Al_2O_3$. This nano particle was about 20nm and was crushed aggregate by mechanical treatment. We have developed the effect of the dispersant and the solvent. The properties of particles were evaluated by SEM, TEM, particle size analysis, and BET. Dispersion and dispersion stability were evaluated by electronic microscope and turbidity.

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MOS소자 반전층의 전자이동도에 대한 해석적 모델 (An analytical model for inversion layer electron mobility in MOSFET)

  • 신형순
    • E2M - 전기 전자와 첨단 소재
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    • 제9권2호
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    • pp.174-179
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    • 1996
  • We present a new physically based analytical equation for electron effective mobility in MOS inversion layers. The new semi-empirical model is accounting expicitly for surface roughness scattering and screened Coulomb scattering in addition to phonon scattering. This model shows excellent agreement with experimentally measured effective mobility data from three different published sources for a wide range of effective transverse field, channel doping and temperature. By accounting for screened Coulomb scattering due to doping impurities in the channel, our model describes very well the roll-off of effective mobility in the low field (threshold) region for a wide range of channel doping level (Na=3.0*10$^{14}$ - 2.8*10$^{18}$ cm$^{-3}$ ).

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Optical and Dielectric Properties of Reduced SrTiO3 Single Crystals

  • Kang, Bong-Hoon
    • 한국세라믹학회지
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    • 제48권4호
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    • pp.278-281
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    • 2011
  • The optical band gap energy for $SrTiO_3$ by reduction at high temperature was 3.15 eV. The reflectivity of reduced $SrTiO_3$ single crystals showed little variation, however, the reflectivity by the reduction condition had no effect. For the phonon mode at about 790 $cm^{-1}$, a blue-shift took place upon $N_2$ reduction and the decreased. However, a red-shift took place upon a $H_2-N_2$ reduction and the increased at the same phonon mode. With decreasing temperature the dielectric constant decreased rapidly. The thermal activation energies were 0.92-1.02 eV.

Nuclear Magnetic Resonance Study of the Raman Spin-Phonon Processes in the Relaxation Mechanisms of Double Sulfate Li3Rb(SO4)2 Single Crystals

  • Heo, Cheol;Lim, Ae-Ran
    • 한국자기공명학회논문지
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    • 제15권1호
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    • pp.40-53
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    • 2011
  • The NMR spectra of $Li_3Rb(SO_4)_2$ crystals and their relaxation processes were investigated by using $^7Li$ and $^{87}Rb$ NMR. The relaxation rates of the $^7Li$ and $^{87}Rb$ nuclei in the crystals were found to increase with increasing temperature, and can be described by the relation $T_1^{-1}{\propto}AT^2$. The dominant relaxation mechanism for these nuclei with electric quadrupole moments is provided by the coupling of these moments to the thermal fluctuations of the local electric field gradient via Raman spin-phonon processes.

부분 및 완전 안정화 지르코니아의 열확산 계수 (Thermal Diffusivity of Partially and Fully Stabilized Zirconia)

  • 이홍림
    • 한국세라믹학회지
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    • 제22권4호
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    • pp.40-46
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    • 1985
  • Thermal diffusivities of zirconia samples partially or fully stabilized by MgO and $Y_2O_3$ were measured b laser-flash method up to 140$0^{\circ}C$ The values of thermal diffusivity decreased as the contents of MgO and $Y_2O_3$ increased due to the phonon scattering effect of defect structure of cubic phase formed. The temperature dependence of thermal diffusivity showed that the thermal diffusivity values decreased due to phono-phonon scattering as the temperature increased. The difference in thermal diffusivity was observed on cooling after heating up to 140$0^{\circ}C$ for magnesia stabi-lized zirconia samples but not for yttria stabilized zirconia samples.

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γ -valley에서 산란의 종류에 따른 전자의 홀 인수 (Hall Factor of Electrons in γ -valley due to Various Scatterings)

  • 서헌교;박일수;전상국
    • 한국전기전자재료학회논문지
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    • 제15권8호
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    • pp.658-663
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    • 2002
  • Hall factor of electrons in $\Gamma$-valley is calculated as functions of temperature, impurity concentration, and nonparabolicity of conduction valleys by taking into account the current density obtained from the Boltzmann transport equation. The dependence of the Hall factor on the temperature is clearly shown in the case of the optical phonon scattering and that on the impurity concentration is obvious in the case of the ionized impurity scattering. As the nonparabolicity of the conduction band increases, the Hall factor due to the acoustic or optic phonon scattering increases, whereas that due to the ionized impurity scattering decreases. The change of the Hall factor can be analysed in terms of the dispersion of relaxation time.