Hall Factor of Electrons in γ -valley due to Various Scatterings
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서헌교
(인하대학교 전자전기컴퓨터공학부)
박일수 (인하대학교 전자전기컴퓨터공학부) 전상국 (인하대학교 전자전기컴퓨터공학부) |
1 |
Analysis of lattice and ionized impurity scattering in p-type germanium
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2 |
Hall factor in strained p-type doped Si₁-хGeх alloy
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DOI ScienceOn |
3 |
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4 |
Hole mobility measurements in heavily doped Si₁-хGeх strained layers
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DOI ScienceOn |
5 |
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6 |
Band noparabolicity effects in semiconductor quantum wells
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DOI ScienceOn |
7 |
Valence band structure of GeхSi₁-х for hole transport calculation
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DOI ScienceOn |
8 |
Impurity upon mobility in silicon
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9 |
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