• Proceedings of the Korea Crystallographic Association Conference
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• 2003.05a
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• pp.8-8
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• 2003

Electron-phonon interaction plays a significant role in forming of colossal magnetoresistance effect (CMR). Polaron formation was observed by neutron diffraction and by extended X-ray absorption fine structure (EXAFS) analysis. Local probe as given by the EXAFS is a useful method to study the polaronic charge and its dependence on temperature and ions size. Here we present the EXAFS study of polaronic charge in La/sub 0.7/Ca/sub 0.3-X/Ba/sub X/MnO₃ compositions. The single phase La/sub 0.7/Ca/sub 0.3-X/Ba/sub X/MnO₃ manganites (x=0; 0.03; 0.06, ..., 0.3) were prepared by ceramic technology [1]. The Curie temperature was determined by extrapolation of the temperature dependence of the magnetization (down to zero magnetization). EXAFS experiments were carried out at the 7C EC beam line of the Pohang Light Source (PLS) in Korea. The atomic pair distribution functions (PDF) were obtained by re-regularization method [2] from filtered spectra. The PDF for the x=0.3 sample showed a single peak function and for x=0.0, 0.03, 0.06, 0.09, 0.12 compositions were asymmetric in agreement with a small Jahn-Teller elongation of two (short and long) bonds of the MnO/sub 6/ octahedron. Dispersion, σ/sub Min-O//sup 2/, and asymmetry, σ/sub Min-O//sup 3/, of the Mn-O bond distances varied significantly with x and showed a maximums at x=0.09. The maximum of σ/sub Min-O//sup 2/ is caused by increase of dynamic rms displacements of the Mn-O distances near the T/sub C/. The observed x dependence of σ/sub Min-O//sup 3/ reflects the reduction of charge carriers mobility at approaching to T/sub C/ from low as well as high temperatures.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.526-531
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• 1998

A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

• ETRI Journal
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• v.31 no.6
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• pp.667-674
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• 2009

Terahertz time-domain spectroscopy has been used to study the optical and dielectric properties of three chalcogenide glasses: $Ge_{30}As_8Ga_2Se_{60}$, $Ge_{35}Ga_5Se_{60}$, and $Ge_{10}As_{20}S_{70}$. The absorption coefficients ${\alpha}({\nu})$, complex refractive index n(${\nu}$), and complex dielectric constants ${\varepsilon}({\nu})$ were measured in a frequency range from 0.3 THz to 1.5 THz. The measured real refractive indices were fitted using a Sellmeier equation. The results show that the Sellmeier equation fits well with the data throughout the frequency range and imply that the phonon modes of glasses vary with the glass compositions. The theory of far-infrared absorption in amorphous materials is used to analyze the results and to understand the differences in THz absorption among the sample glasses.

• Polymer(Korea)
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• v.37 no.5
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• pp.638-641
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• 2013

GNS/PVDF composites were prepared using graphite nanosheets (GNS) and poly(vinylidene fluoride) (PVDF) for flexible thermoelectric application. We measured the electrical conductivity, thermal conductivity and Seebeck coefficient of GNS/PVDF composites with different contents of GNS and then evaluated the thermoelectric properties of GNS/PVDF composites. The electrical conductivity of GNS/PVDF composites increased from 389 to 1512 S/m with increasing the content of GNS from 10 to 70 wt%. While the electrical conductivity dramatically increased, Seebeck coefficient and thermal conductivity did not show any big difference as the content of GNS increases. In this study, we demonstrated that GNS/PVDF composites improved the thermoelectric properties by decreasing the thermal conductivity due to the phonon scattering at the interfaces between polymer and GNS nanoplatelets.

• Elastomers and Composites
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• v.55 no.1
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• pp.59-66
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• 2020

Herein, we investigated the thermal conductivity and thermal stability of natural rubber composite systems containing hybrid fillers of boron nitride (BN) and aluminum nitride (AlN). In the hybrid system, the bimodal distribution of polygonal AlN and planar BN particles provided excellent filler-packing efficiency and desired energy path for phonon transfer, resulting in high thermal conductivity of 1.29 W/mK, which could not be achieved by single filler composites. Further, polyethylene glycol (PEG) was compounded with a commonly used naphthenic oil, which substantially increased thermal conductivity to 3.51 W/mK with an excellent thermal stability due to facilitated energy transfer across the filler-filler interface. The resulting PEG-incorporated hybrid composite showed a high thermal degradation temperature (T₂) of 290℃, a low coefficient of thermal expansion of 26.4 ppm/℃, and a low thermal distortion parameter of 7.53 m/K, which is well over the naphthenic oil compound. Finally, using the Fourier's law of conduction, we suggested a modeling methodology to evaluate the cooling performance in thermal management system.

• Current Optics and Photonics
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• v.2 no.3
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• pp.261-268
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• 2018

Stimulated polariton scattering (SPS) from the $A_1$ transverse optical (TO) modes of $BaTiO_3$ bulk crystal generating a terahertz (THz) wave with the noncollinear phase-matching (NPM) condition is theoretically investigated. To our best knowledge, this is the first report on THz wave generation from $BaTiO_3$ bulk crystal via SPS. Phase-matching (PM) characteristics in the NPM configuration are analyzed. Effective parametric gain lengths for the Stokes and THz waves in the NPM configuration are calculated. The effective parametric gain coefficient and absorption coefficient of the THz wave in $BaTiO_3$ are theoretically simulated. The THz phonon flux densities generated via SPS in $BaTiO_3$ are theoretically calculated by solving the coupled wave equations under the NPM condition. The PM characteristics and THz-wave parametric gain characteristics in $BaTiO_3$ are compared to those in $MgO:LiNbO_3$. The results of the analysis indicate that $BaTiO_3$ is an attractive optical crystal for efficient THz wave generation via SPS.

• Bulletin of the Korean Chemical Society
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• v.34 no.1
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• pp.95-98
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• 2013

The photoluminescence (PT) properties of Al-doped ZnO thin films grown by the sol-gel dip-coating method have been investigated. At 12 K, nine distinct PL peaks were observed at 2.037, 2.592, 2.832, 3.027, 3.177, 3.216, 3.260, 3.303, and 3.354 eV. The deep-level emissions (2.037, 2.592, 2.832, and 3.027 eV) were attributed to native defects. The near-band-edge (NBE) emission peaks at 3.354, 3.303, 3.260, 3.216, and 3.177 eV were attributed to the emission of the neutral-donor-bound excitons ($D^0X$), two-electron satellite (TES), free-to-neutral-acceptors (e,$A^0$), donor-acceptor pairs (DAP), and second-order longitudinal optical (2LO) phonon replicas of the TES (TES-2LO), respectively. According to Haynes' empirical rule, we calculated the energy of a free exciton (FX) to be 3.374 eV. The thermal activation energy for $D^0X$ in the nanocrystalline ZnO thin film was found to be ~25 meV, corresponding to the thermal dissociation energy required for $D^0X$ transitions.

• Korean Journal of Crystallography
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• v.8 no.1
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• pp.33-37
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• 1997

The optical properties of (1210) GaN epitaxy films grown on the (1012) $\alpha-A1_2O_3$ substrates have been studied. The hetero-epitaxy films were grown by the halide vapor phase epitaxy (HVPE) method using $Ga/HC1/NH_3/He$ system at $990^{\circ}C$. XRD, RHEED and SEM are used for the identification of the hetero-epitaxy films structure and surface morphology. The confirmed (1210) GaN epitaxy films were characterized by PL and Raman. By the Raman scattering, the active phonon modes of single-phase GaN films are varied with the arrangement of both polarization and propagation directions of laser beam with reference to the axis in single-phase crystal films. The Y(Z, Y & Z) X geometry allows scattering pat-terns of $A_1(TO)=533\;cm^{-1},\;E_1(TO)=559\;cm^{-1}\;and\;E_2=568 cm^{-1}$ modes, whereas in the Z(Y, Y & Z) X geometry the only $E_2$ mode are observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.126-127
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• 2007

Sn-filled and Fe-doped $CoSb_3$ skutterudites were synthesized by encapsulated induction melting. Single ${\delta}$-phase was successfully obtained by subsequent annealing and confirmed by X-ray diffraction analysis. Temperature dependences of Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed the p-type conduction. Electrical resistivity increased with increasing temperature, which shows that the $Sn_zCo_3FeSb_{12}$ skutterudite is highly degenerate. Thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. Thermoelectric figure of merit was enhanced by Sn filling and its optimum filling content was considered to be z=0.3 in the $Sn_zCo_3FeSb_{12}$ system.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.162-162
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• 2010

InAs 는 광전자 및 광통신 소자에 널리 이용되는 $In_xGa_{1-x}As_yP_{1-y}$ 화합물의 endpoint 로서, Heterojunction Field-Effect Transistors (HEMTs), Heterojunction Bipolar Transistor (HBT) 등에 중요하게 이용되고, 다양한 소자의 기판으로도 폭넓게 사용되는 물질이다. InAs 의 반도체 소자로의 응용을 위해서는 정확한 광 특성과 밴드갭 값들이 필수적이며, 분광타원편광분석법(ellipsometry) 을 이용한 상온 InAs 유전율 함수는 이미 정확히 알려져 있다. 그러나 상온에서는 $E_2$ 전이점 영역에서 여러 개의 밴드갭들이 중첩되어 있어, 밴드구조계산 등에 필수적인 InAs의 전이점을 정확히 정의하기 어렵다. 또한, 현재의 산업계에서 중요하게 여겨지는 실시간 모니터링을 위해서는 증착온도에서의 유전율 함수 데이터베이스가 필수적이다. 이와 같은 필요성에 의해, 22 K - 700 K 의 온도범위에서 InAs 의 유전율 함수와 밴드갭 에너지에 대한 연구를 수행하였다. InAs bulk 기판을 methanol, acetone, DI water 등으로 세척 한 뒤, 저온 cryostat 에 부착하였다. 분광타원분석법은 표면의 오염에 매우 민감하기 때문에, 저온에서의 응결 방지를 위해 고 진공도를 유지하며, 액체 헬륨으로 냉각하였다. 0.7 - 6.5 eV 에너지 영역에서 측정이 가능한 분광타원편광분석기로 측정한 결과, 온도가 증가함에 따라 열팽창과 phonon-electron 상호작용효과의 증가에 의해, 밴드갭 에너지 값의 적색 천이와 밴드갭들의 중첩을 관찰 할 수 있었다. 정확한 밴드갭 에너지 값의 분석을 위하여 2계 미분을 통한 표준 밴드갭 해석법을 적용하였으며, 22 K 의 저온에서는 $E_2$ 전이점 영역에서 중첩된 여러 개의 밴드갭들을 분리 할 수 있었다. 또한 고온에서의 연구를 통해, 실시간 분석을 위한 InAs 유전함수의 데이터베이스를 확립하였다. 본 연구의 결과는 InAs 를 기반으로 한 광전자 소자의 개발 및 적용분야와 밴드갭 엔지니어링 분야에 많은 도움이 될 것으로 예상한다.