• Title/Summary/Keyword: Phase-Shift Circuit

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A PWM Phase-Shift Circuit using an RC Delay for Multiple LED Driver ICs

  • Oh, Jae-Mun;Kang, Hyeong-Ju;Yang, Byung-Do
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.4
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    • pp.484-492
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    • 2015
  • This paper proposes a PWM phase-shift circuit to make that the LED lighting system distributes the channel currents evenly for any number of LED strings by generating evenly phase-shifted PWM signals for multiple LED driver ICs. The evenly distributed channel currents reduce the peak current, the decoupling capacitor size, and EMI noise. The PWM phase-shift circuit makes an arbitrary degree of PWM phase-shift by using a resistor and a capacitor. It measures the RC delay once. It reduces the number of external resistors and capacitors by providing zero and 180 degree phase-shift modes requiring no resistor and capacitor. An LED driver IC with the PWM phase-shift circuit was fabricated with a $0.35{\mu}m$ BCDMOS process. The PWM phase-shift circuit receives a PWM signal of 50 Hz~20 kHz at $f_{CLK}=450kHz$ and it generates a $0{\sim}360^{\circ}$ phase-shifted PWM signal with $R=0{\sim}1.1M{\Omega}$ at C=1 nF and $f_{PWM}=1kHz$. The measured phase errors are 1.74~3.94% due to parasitic capacitances.

A Characteristic Study on a Diode Phase Shifter in a Parallel Plate Waveguide (평행판도파관내에서의 다이오드 위상변위기 특성에 관한 연구)

  • Lee, Kee-Oh;Park, Dong-Chul
    • Journal of the Korea Institute of Military Science and Technology
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    • v.12 no.5
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    • pp.644-651
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    • 2009
  • In this paper, the design results of a $22.5^{\circ}$ diode phase shifter for the RADANT lens and two $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layers for the diode phase shifter are presented. The amount of phase shift introduced by each dielectric layer depends on the thickness and the shape of the metal strip and the electrical property of the diode. The equivalent circuit model is employed to represent the dielectric phase shift layer, and the simulated result of the equival circuit model is compared with the result of the field simulation. The measured data of the fabricated $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layer shows about $2^{\circ}$ phase shift error.

Digital-To-Phase-Shift PWM Circuit for High Power ZVS Full Bridge DC/DC Converter (대용랑 ZVS Full Bridge DC/DC 컨버터에 있어서 Digital-To-Phase Shift PWM 발생회로)

  • Kim, Eun-Su;Kim, Tae-Jin;Byeon, Yeong-Bok;Park, Sun-Gu;Kim, Yun-Ho;Lee, Jae-Hak
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.49 no.1
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    • pp.54-61
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    • 2000
  • Conventionally, ZVS FB DC/DC converter was controlled by monolithic IC UC3879, which includes the functions of oscillator, error amplifier and phase-shift circuit. Also, microprocessor and DSP have been widely used for the remote control and for the immediate waveform control in ZVS FB DC/DC converter. However the conventional microprocessor controller is complex and difficult to control because the controller consists of analog and digital parts. In the case of the control of FB DC/DC converter, the output is required of driving a direct signal to the switch drive circuits by the digital controller. So, this paper presents the method and realization of designing the digital-to-phase shift PWM circuit controlled by DSP (TMX320C32) in a 2,500A, 40㎾ ZVS FB DC/DC converter.

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Design and Implementation of Reactive Circuit for Ferroelectric Phase Shifter (강유전체 위상 변위기를 위한 Reactive Circuit 설계 및 구현)

  • Kim Young-Tae;Moon Seung-Eon;Lee Su-Jae;Kim Sun-Hyeong;Park Jun-Seok;Cho Hong-Goo
    • 한국정보통신설비학회:학술대회논문집
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    • 2003.08a
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    • pp.286-288
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    • 2003
  • In this paper, in order to obtain a large differential phase shift with a little change in applied voltage, a ferroelectric reflective load circuit has been designed on top of barium strontium titanate $(Ba,Sr)TiO_3$ [BST] thin film. The design of the ferroelectric reflection-type phase shifter is based on a reflection theory of terminating circuit, which has a reflection-type analogue phase shifter with two ports terminated in symmetric phase-controllable reflective networks. To achieve large amounts of phase shift in low bias-voltage range, the effects of change of capacitance and transmission line connected with two coupled ports of a 3-dB $90^{\circ}$ branch-line hybrid coupler have been investigated. A large phase shift with a small capacitance change in the parallel terminating circuit has been demonstrated in the paper.

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Study on Equivalent Circuit of 45 Phase Shift Layer for Radant Lens (Radant Lens용 45 위상 변위 레이어의 등가회로 연구)

  • Seong, Cheol-Min;Park, Dong-Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.10
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    • pp.1121-1127
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    • 2010
  • This paper describes the equivalent circuit of $45^{\circ}$ layer, one of $11.25^{\circ}$, $22.5^{\circ}$, and $45^{\circ}$ phase shift layers, which are needed for X-band Radant lens 4-bit phase shifter. The equivalent circuit is extracted by comparing the CST's MWS results with the Agilent's ADS results for $45^{\circ}$ phase shift layer. The simulated result is compared with the measured one. Using the extracted equivalent circuit, the phase bit simulation results of 4-bit Radant lens are also presented.

Phase-Shift Full-Bridge DC/DC Converter with Fixed-Phase Operation Inverter (고정 위상 동작 인버터를 포함하는 위상천이 풀 브리지 DC/DC 컨버터)

  • Kim, Jin-Ho;Park, Jae-Sung;Kim, Hong-Kwon;Park, Jun-Woo;Shin, Yong-Saeng;Ji, Sang-Keun;Cho, Sang-Ho;Roh, Chung-Wook;Hong, Sung-Soo
    • The Transactions of the Korean Institute of Power Electronics
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    • v.18 no.2
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    • pp.131-137
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    • 2013
  • In this paper, the phase-shift full-bridge DC/DC converter with fixed-phase operation inverter is proposed. The proposed circuit consists of two full-bridge inverters which are connected in parallel. While one full-bridge inverter operates as the fixed-phase, it regulates the output voltage by adjusting the phase of the other inverter. During the normal operation period, the proposed circuit makes the less amount of conduction loss of the primary switches and secondary synchronous rectifiers, as well as the less amount of the current ripple of the output inductor, than the conventional phase-shift full-bridge DC/DC converter does. Also, it achieves high efficiency by reducing the snubber loss of the secondary synchronous rectifier. To sum up, the present inquiry analyzes the theoretical characteristics of the proposed circuit, and shows the experimental results from a prototype for 450W power supply.

A Study on characteristic of a double resonant type high frequency inverter using Phase-Shift (Phase-Shift를 이용한 복공진형 고주파 인버터의 특성에 관한 연구)

  • 조규판;김종해;남승식;김동희;노채균;배영호
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.14 no.1
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    • pp.109-117
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    • 2000
  • A full bridge type double resonant high frequency resonant inverter to give VVVF function in the inverter used as power source of induction heating at high frequency is presented in this paper. This proposed inverter can reduce distribution of the switching current because of using the current of serial resonant circuit to the input current of the parallel one and this paper also realize the output control of independence irrespective of the switching frequency using Phase-shift. The analysis of the proposed circuit is generally described by using the normalized parameters. Also, the principle of basic operating and the its characteristics are estimated by the parameters, such as switching frequency, the variation of phase angle ($\phi$) of Phase-shift.

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A study on Characteristics analysis of time sharing type high frequency resonant inverter using a Phase-Shift (Phase-Shift를 이용한 시분할방식 고주파 공진 인버터의 특성 해석에 관한 연구)

  • Cho, G.P.;Lee, E.W.;Bae, Y.H.;Yoon, S.H.;Kim, J.K.
    • Proceedings of the KIEE Conference
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    • 2000.07b
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    • pp.1168-1170
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    • 2000
  • A half bridge time sharing type high frequency resonant inverter to give VVVF function in the inverter used as power source of induction heating at high frequency is presented in this paper, this paper also realize the output control of independence irrespective of the switching frequency using Phase-Shift. The analysis of the proposed circuit is generally described by using the normalized parameters. Also, the principle of basic operation and the its characteristics are estimated by the parameters, such as switching frequency, the variation of phase angle(${\varphi}$) of Phase-Shift. It is certain that the proposed circuit will be used and expanded in the high frequency power supplies like induction heating systems.

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Analysis of MOSFET Failure Modes in Bi-directional Phase-Shift Full-Bridge Converters

  • Oh, Chang-Yeol;Sung, Won-Yong;Kim, Yun-Sung;Lee, Byoung-Kuk
    • Journal of Electrical Engineering and Technology
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    • v.10 no.4
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    • pp.1692-1699
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    • 2015
  • This paper presents an analysis of the mechanism of failure modes in bi-directional phase-shift full-bridge converters, composed of MOSFET, based on the circuit operation and parasitic parameters of MOSFET. In addition, the relation between circuit operation and parameters is suggested through an experimental comparison. From this relation, the suitable ranges of parameters for stable performance are analyzed. The design criteria of the bi-directional phase-shift full-bridge converter are presented and evaluated from the experimental verification.

2 Bits MMIC Phase Shifter Improving the Phase Characteristic (위상특성을 개선시킨 2 Bits MMIC 위상변위기)

  • 정명득
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.40 no.9
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    • pp.392-397
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    • 2003
  • Reflection type phase shifter with Lange coupler is widely used as a circuit topology to obtain phase shift in broadband operation. The phase shift of 33.75$^{\circ}$ at this type is achieved by simultaneously turning on both 11.25$^{\circ}$ and 22.5$^{\circ}$ . In order to improve the phase accuracy of 33.75$^{\circ}$, this paper proposes the additional circuit which is composed of a GaAs PIN diode and a reactive load. By utilizing MMIC technology. Over the 2-6 GHz band, the measured result of phase difference between the previous circuit and the proposed circuit shows average 4.7$^{\circ}$ on the basis of 33.75$^{\circ}$. Insertion loss and return loss are invariant in comparison with the previous circuit.