• ETRI Journal
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• 제18권3호
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• pp.147-160
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• 1996

We investigate noise-induced phase transitions in globally coupled active rotators with multiplicative and additive noises. In the system there are four phases, stationary one-cluster, stationary two-cluster, moving one-cluster, and moving two-cluster phases. It is shown that multiplicative noise induces a bifurcation from one-cluster phase to two-cluster phase. Pinning force also induces a bifurcation from moving phase to stationary phase suppressing the multiplicative noise effect. Additive noise reduces both effects of multiplicative noise and pinning force urging the system to the stationary one-cluster phase. The frustrated effects of pinning force and additive and multiplicative noises lead to a reentrant transition at intermediate additive noise intensity. Nature of the transition is also discussed.

• International Journal of Air-Conditioning and Refrigeration
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• 제11권4호
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• pp.159-169
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• 2003

Five two-phase closed loop thermosyphons (TLTs) specially designed and constructed for the present study are one small scale loop, two medium scale loops (MSLI and MSLII) and two large scale loops (LSLI and LSLII). Two simulation models based on thermal resistance network, lumped and sectorial, are presented. In the Lumped model, the evaporator section is dealt as one lumped boiling section. Whereas, in the Sectorial model, all possible phenomena which would occur in the evaporator section due to the two-phase boiling process are considered in detail. Flow regimes, the flow transitions between flow regimes and other two-phase parameters involved in two-phase flows are carefully analyzed. In the present study, the results of two different simulation models are compared with experimental results. The comparisons showed that the simulation results by the Lumped model and by the Sectorial model did not show any partiality for the model used for the simulation. The simulation results according to the correlations show the various results in the large different range.

• Advances in nano research
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• 제2권4호
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• pp.211-217
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• 2014

The self-assembled strain-induced sub-micrometric islands and nanostructures are grown from In-As-Sb-P quaternary liquid phase on InAs (100) substrates in Stranski-Krastanow growth mode. Two samples are under consideration. The first sample consists of unencapsulated islands and lens-shape quantum dots (QDs) grown from expressly inhomogeneous liquid phase. The second sample is an n-InAs/p-InAsSbP heterostructure with QDs embedded in the p-n junction interface. The morphology, size and shape of the structures are investigated by high-resolution scanning electron (SEM) and transmission electron (TEM) microscopy. It is shown that islands, as they decrease in size, undergo shape transitions. Particularly, as the volume decreases, the following succession of shape transitions are detected: sub-micrometric truncated pyramid, {111} facetted pyramid, {111} and partially {105} facetted pyramid, completely unfacetted "pre-pyramid", hemisphere, lens-shaped QD, which then evolves again to nano-pyramid. A critical size of $5{\pm}2nm$ for the shape transformation of InAsSbP-based lens-shaped QD to nano-pyramid is experimentally measured and theoretically evaluated.

• 한국정보처리학회논문지
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• 제3권6호
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• pp.1365-1374
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• 1996

분산 환경하에서 전역 트랜잭션의 원자성을 보장하기 위해 보편적으로 사용하는 2단계 완료규약(2PC)의 블록킹 현상을 완화하기 위해 낙관적 2PC를 사용할 수 있다. 낙관적 2PC는 보상 트랜잭션을 사용하여 트랜잭션의 원자성을 의미적으로 보장하게 되지만 보상 트랜잭션의 특성으로 인하여 전역 직렬성(global serializability)을 위 배할 수 있다. 본 논문에서는, 전역 트랜잭션의 상태전이 분석을 통하여 전역 직렬성 을 보장하는 올바른 전역 트랜잭션 관리 규약들을 제안한다. 제안된 규약들은 한 전 역 트랜잭션의 실행을 결정하기 전에 동시에 실행되는 다른 전역 트랜잭션들의 상태 를 검사하여 이 결과에 따라 전역 트랜잭션의 실행을 지연시킴으로써 전역직렬성을 보장한다.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.622-626
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• 2011

Lead-free piezoelectric ceramics with the composition of $(Na_{0.54}K_{0.46})_{0.96}Li_{0.04}(Nb_{1-0.10-x}Ta_{0.10}Sb_x)O_{3}$ (x= 0~8 mol%) were fabricated by nomal sintering at $1,090^{\circ}C$ for 5 h. the phase structure, microstructure and electrical properties were investigated with a emphasis on the influence of the Sb content. All samples exhibit a single perovskite phase over the whole compositional range. For the ceramics with x= 4 [mol%], two phase transitions are observed at $75^{\circ}C$ and $366^{\circ}C$, corresponding to the phase transitions of orthorhombic to tetragonal (To-t) and tetragonal to cubic (Tc), respectively. high electrical properties of $d_{33}$= 210.83 pC/N, kp= 40%, ${\varepsilon}_r$= 1,091.35, $\rho$= 4.54 g/$cm^2$ were obtained from the specimen with x= 4 [mol%], which suggests that the composition ceramics is a promising lead-free piezoelectric material.

• 한국세라믹학회지
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• 제34권12호
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• pp.1235-1239
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• 1997

Sodium niobate single crystals were grown by high temperature solution growth with Na2O/B2O3 flux. The phase transitions and domain structures of sodium niobate were observed using transmission polarizing microscope from room temperature to $650^{\circ}C$. There was imperfect extinction region within as-grown crystals and this area could be removed by heat treatment. The area existed within crystal till 3$65^{\circ}C$, in which temperature the space group of sodium niobate is changed from Pbma to Pmnm. The phase transition from Pbma to Pmnm happened abruptly with changing domain structure. At 48$0^{\circ}C$, 52$0^{\circ}C$ and 572$^{\circ}C$, the colors and walls of domains were changed. All domains disappeared and the space group of sodium niobate was changed from P4/mbm to Pm3m at 64$0^{\circ}C$. When sodium niobate changed from high temperature phase to low temperature phase, the memory effect of domain structure was not observed.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2007년도 추계 학술대회논문집
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• pp.243-248
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• 2007

A three-dimensional (3D) unstructured hydrodynamic solver for transient two-phase flows has been developed. A two-fluid three-field model was adopted for the two-phase flows. The three fields represent a continuous liquid, an entrained liquid, and a vapour field. The hydrodynamic solver is for the 3D component of a nuclear system code and the component-scale analysis tools for transient two-phase flows. The finite volume method and unstructured grid are adopted, which are useful for the flows in a complicated geometry. The semi-implicit ICE (Implicit Continuous-fluid Eulerian) numerical scheme has been adapted to the unstructured non-staggered grid. This paper presents the numerical method and the preliminary results of the calculations. The results show that the numerical scheme is robust and predicts the phase change and the flow transitions due to boiling and flashing problems well.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.147-151
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• 1996

Brewster angle microscopy(BAM) makes it possible to observe the monolayer states on the water subphase and the phase transitions from a gaseous phase via a expanded phase to a condensed phase. Also BAM can be used to observe the films on the solid substrate such as Langmuir-Blodgett(LB) films. In this Paper Polyamic Acid Alkylamine Salts(PAAS) was used for forming L films and LB films and $\pi$-A isotherm showed pressure of each phase. We obtained BAM images as surface pressure increased. Images of LB films were compared with data from ellipsometry which was used to measure the film thickness. Images of both L films and LB films were analyzed with computer in the point of brightness.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.26-27
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• 2000

층 성장 방향으로 정전기장을 걸어준 GaAs/AlGaAs 초격자 반도체에서, 두 개의 100 fs 광학 펄스에 의해 생성된 four-wave-mixing(FWM) 신호의 dephasing 현상을 반도체 블록 방정식을 사용해서 분석하고자 한다. 이 FWM 신호의 이완은 전하-전하와 전하-포논 충돌과 같은 phase-breaking 충돌 과정들에 의해서 야기되는 비선형적인 광분극의 dephasing에 의해서 결정되어 진다.$^{(1)}$ 이 비선형적인 광분극은 펄스들에 의해서 동시에 여기되어 나타나는 자유전하 분극과 엑시톤 분극으로 구성되는데, 이 두 분극의 이완시간 특성은 서로 다른 거동을 보인다.$^{(2,3)}$ GaAs/AlGaAs 초격자 반도체에서 이 자유 전하 분극의 dephasing이 엑시톤 분극의 dephasing 보다 훨씬 빠르게 일어나고, 엑시톤이 자유 전하의 특성을 갖게 될수록, 즉 온도가 높을수록 또 엑시톤이 3차원의 특성을 가질수록 이 dephasing은 빠르게 일어난다.$^{(4)}$ (중략)

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.222.2-222.2
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• 2015

A $Ge_2Sb_2Te_5$ nanowire (GST NW) phase change memory device is investigated with Joule heating electrodes. GST is the most promising phase change materials, thus has been studied for decades but atomic structure transition in the phase-change area of single crystalline phase-change material has not been clearly investigated. We fabricated a phase change memory (PCM) device consisting of GST NWs connected with WN electrodes. The GST NW has switching performance with the reset/set resistance ratio above $10^3$. We directly observed the changes in atomic structure between the ordered hexagonal close packed (HCP) structure and disordered amorphous phase of a reset-stop GST NW with cross-sectional STEM analysis. Amorphous areas are detected at the center of NW and side areas adjacent to heating electrodes. Direct imaging of phase change area verified the atomic structure transition from the migration and disordering of Ge and Sb atoms. Even with the repeated phase transitions, periodic arrangement of Te atoms is not significantly changed, thus acting as a template for recrystallization. This result provides a novel understanding on the phase-change mechanism in single crystalline phase-change materials.