• Journal of Advanced Marine Engineering and Technology
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• v.18 no.3
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• pp.78-84
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• 1994

The location of periodic noises in phase of AC power wave reveals to be specific according to the noise kinds which can be generally classified into modulation and baseband types in DLC. The former noise type has constant noise phase which is originated from switching mode power supplies and the latter normally caused from thyristor circuit of low switching frequency is compared to be more dispersive than the other.

• Analytical Science and Technology
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• v.5 no.1
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• pp.115-120
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• 1992

The upper limit of solid solution of $Al_2O_3$ in $LiTaO_3$ was investigated using X-ray diffraction and Raman spectroscopy. By substituting cations in $LiTaO_3$ with $Al^{3+}$, the melting temperature was lowed and the ferroelectric properties can be improved. It is easier at lower temperature to fabricate the single crystal used for SAW filters and IR sensors. From the measured lattice constants and Raman band broadening, the solubility limit was X=0.25mol in $Li_{1-X}Al_{2X}Ta{1-X}O_3$, above which $Al_2O_3$ was obsered as a second phase. The Raman band of sintered $LiTaO_3$ was compared with that of the single crystal to see the effect of grain size on the band broadening.

• Journal of IKEEE
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• v.20 no.3
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• pp.279-284
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• 2016

This paper presents a two stage L-band power amplifier realized with a $0.32{\mu}m$ Silicon-On-Insulator (SOI) CMOS technology. To overcome a low breakdown voltage limit of MOSFET, stacked-FET structures are employed, where three transistors in the first stage amplifier and four transistors in the second stage amplifier are connected in series so that their output voltage swings are added in phase. The stacked-FET structures enable the proposed amplifier to achieve a 21.5 dB small-signal gain and 15.7 dBm output 1-dB compression power at 1.9 GHz with a 122 mA DC current from a 4 V supply. The amplifier delivers a 19.7 dBm. This paper presents a two stage L-band power amplifier realized with a $0.32{\mu}m$ Silicon-On-Insulator (SOI) CMOS technology. To overcome a low breakdown voltage limit of MOSFET, stacked-FET structures are employed, where three transistors in the first stage amplifier and four transistors in the second stage amplifier are connected in series so that their output voltage swings are added in phase. The stacked-FET structures enable the proposed amplifier to achieve a 21.5 dB small-signal gain and 15.7 dBm output 1-dB compression power at 1.9 GHz with a 122 mA DC current from a 4 V supply. The amplifier delivers a 19.7 dBm saturated output power with a 16 % maximum Power Added Efficiency (PAE). A bond wire fine tuning technology enables the amplifier a 23.67 dBm saturated output power with a 20.4 % maximum PAE. The die area is $1.9mm{\times}0.6mm$.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2529-2533
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• 1999

This paper proposes a modified hysteresis current control method based on space vector modulation. The proposed method differs from former works in that it uses effective voltage vectors instead of zero vectors while not significantly increasing the circuit complexity. The circuit uses outer band that is slightly wider than the usual current limit band (inner band) to detect the phase of current command and thereby the region information. The comparator output signals associated with the inner and outer band are used to determine the proper voltage vector that minimizes the current error and number of switching, with simple logic circuitry. The utilization of effective voltage vector is of particular importance when the ac-side emf is relatively large. Both the simulation and experiment show that the proposed method is more effective than the conventional one that uses zero vectors, in reducing the number of switching over a range of ac-side emf variation.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.405-410
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• 1996

The partial substitution of LiTaO3 with Al2O3 caused the variation of dielectric properties and a lower melting temperature yielding an easier growth of single crystal. The lattice constants and Raman band broadening were measured for the LiTaO3 solid solution in which the cations of Li+ and Ta5+ were partially substituted by Al3+ cation. The LiTaO3 type limit phases were obtained. ; Li1.15Al0.45Ta0.7O3 for cationic excess Li1.15Al0.45Ta0.7O3 for stoichiometry Li0.85Al0.05TaO3 for cationic deficit. The second phase was formed beyond the solubility limit. The limit phase (Li0.85Al0.05TaO3) in the region of cationic deficit showed the lowest Cuire temperature of 61$0^{\circ}C$ and melting point of 152$0^{\circ}C$ compared to the solid solutions in other regions (TMp=1$650^{\circ}C$, Tc=69$0^{\circ}C$ for LiTaO3)

• 제어로봇시스템학회:학술대회논문집
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• 1986.10a
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• pp.137-141
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• 1986

This paper presents optimal recursive digital filter design to meet simultaneous specifications of magnitude and linear phase characteristics. As is well known, the overshoot in the vicinity of discontinuity is hight. The technique using linear programming (the dual programming) is choosing more specification points in the vicinity of band limit frequency. The resulting filter can shown improved response and numerical accuracy with reduced nonuniform specification points in frequency domain.

• Journal of electromagnetic engineering and science
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• v.1 no.1
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• pp.18-23
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• 2001

A fast-sweep broadband FM reflectometer system has been successfully developed and operacted at the DIII-D tokamak, producing reliable density Profiles with excellent spatial (1 $\leq$ cm) and temporal resolution (~100 $\mu$ s). The system uses a solid-state microwave oscillator and an active quadrupler, covering full Q-band frequencies (33~50 GHz) and providing relatively high output power (20~60 mW). The system hardware allows fu11band frequency sweep in 10 $\mu$ s, but due to digitization rate limit on DIII-D, sweep time was limited to 75~100 $\mu$ s. Fast frequency sweep has helped to reduce density fluctuation effects on the reflectometer phase measurements, thus improving reliability for individual sweeps. The fast-sweep system with high spatial and temporal resolution has allowed to measure fast-changing edge density profiles during plasma ELMS and L-H transitions, thus enabling fast-time sca1e physics studies.

• Transactions of the Korean Society of Automotive Engineers
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• v.18 no.1
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• pp.127-130
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• 2010

This paper deals with the formability of DP590 steel considering the strain rate. The strain hardening coefficient, elongation and r-value were obtained from the static and dynamic tensile test. As strain rate increases from static to 100/s, the strain hardening coefficient and the uniform elongation decrease and the elongation at fracture and r-value decrease to 0.1/s and increase again to 100/s. The high speed forming limit tests with hemi-spherical punch were carried out using the high speed crash testing machine and high speed forming jig. The high speed forming limit of DP590(order of $10^2$/s) decreases compared to the static forming limit(order of $10^{-3}$/s) and the forming limit band in high speed forming test is narrower than that in the static forming test. This tendency may be due to the development of brittleness with increase of stain rate.

• Analytical Science and Technology
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• v.8 no.4
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• pp.539-543
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• 1995

The on-line SPE-HPLC coupling system was developed for the efficient separation and determination of trace pesticides, such as phenoxyacetic acids and esters, and triazines in aqueous solutions. By using the developed SPE-HPLC on-line system, the band broadening usually observed in single precolumn switching mode was greatly reduced, consequently, the quantitative determination of trace pesticides could be achieved, Besides, since most of the analytes preconcentrated by SPE column could be injected directly into HPLC system, the limit of detection can be improved down to ppt level.

• Proceedings of the Korea Crystallographic Association Conference
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• 2003.05a
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• pp.6-6
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• 2003

Highly crystalline 5H-polytypic form of sp3-bonded boron nitride (BN) was grown by pulsed-laser-vaporization of BN, where synchronous reactive-plasma packets assisted the crystal growth in the vapor phase. The structure of the product crystallites (˙5 micrometers) was confirmed by using transmission electron diffraction and electron energy loss spectroscopy. This material proved to have a sharp and dominant band at 225 nm by cathode luminescence at room temperatures and corresponding monochromatic images revealed that they uniformly emitted the ultraviolet light. Considering that cubic BN has already been doped as p- and n- type semiconductors, this material may be applied to the light-emitting devices working at almost the deepest limit of the UV region that is functional without vacuum.