• Proceedings of the Korea Information Processing Society Conference
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• 2013.11a
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• pp.30-32
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• 2013

현재 차세대 메모리로 불리는 스토리지 클래스 메모리는 빠른 속도, 비휘발성, 바이트 단위 데이터 접근 등의 장점으로 많은 관심을 갖고 있다. 스토리지 클래스 메모리중 하나인 PCM(PhaseChange Memory)은 높은 집적도로 현재 상용화 단계이나 낮은 내구도를 지니고 있어 이를 해결하기 위한 마모도 균등화 기법이 필수적으로 요구된다. 본 논문에서는 마모도 균등화 기법들의 비교 및 분석을 통해 현존하는 마모도 균등화 기법들의 한계를 알아보고 이를 극복하기 위한 새로운 블록 교환 마모도 균등화 기법을 소개한다.

• Journal of the Korean Society for Heat Treatment
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• v.5 no.3
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• pp.149-156
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• 1992

Transformation behavior and reversible shape memory effct of Ti-Ni-Cu alloys with various Cu content has been investigated by means of electrical resistivity measurement, differential scanning calorimetry. X-ray diffraction and strain gage sensor. The transformation sequence in Ti-Ni-Cu alloys substituted by Cu for Ni up to 5at.% occurs to $B2{\leftrightarrow}B19^{\prime}$ and it proceeds in two stages by addition of 10 at.%Cu. i.e. $B2{\leftrightarrow}B19{\leftrightarrow}B19^{\prime}$. But the content of Cu increases up to 20at.%, it has been transformed in one stage ; $B2{\leftrightarrow}B19$. The shape change of Ti-40Ni-10Cu alloy which was constrain aged in circular form bended in $B2{\leftrightarrow}B19$ transformation but it spreaded out in $B19{\leftrightarrow}B19^{\prime}$ transformation. The amount of reversible shape change (${\Delta}{\varepsilon}$) of Ti-47Ni-3Cu alloy constrain aged at $400^{\circ}C$ after solution treatment has a maximum value of about $5.6{\times}10^{-3}$, but that of cold rolled and constrain aged specimens exhibits a little value independent of Cu concentrations.

• Journal of the Korean Society for Heat Treatment
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• v.4 no.3
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• pp.31-38
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• 1991

Effect of thermal cycling on shape memory effect and stabilization of austenite was investigated in Fe-21%Mn alloy. The thermal cyclic treatment was carried out with two types, room temperature${\leftrightarrow}215^{\circ}C$ and room temperature${\leftrightarrow}260^{\circ}C$. In case of the room temperature${\leftrightarrow}215^{\circ}C$, the SME was rapidly increased up to 3 cycles and maintained nearly constant value regardless of further cycles. In case of the room temperature${\leftrightarrow}260^{\circ}C$, however, the SME was increased with increasing the thermal cycle up to 5 cycles and decreased gradually with further cycle. The variation of the ${\varepsilon}$ martensite volume pet with the thermal cycle was in good agreement with the variation of the SME. Therefore, the change of the SME due to the cyclic treatment was explained with the change of the ${\varepsilon}$ martensite content. As the thermal cycle was increased, the $M_s$ temperature was decreased, and the $A_s$ and $A_f$ temperatures were increased, respectively.

• Journal of the Korean Society for Heat Treatment
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• v.21 no.6
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• pp.307-313
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• 2008

The tensile deformation and shape recovery behaviors were studied in Ni-Ti shape memory wires showing different transformation characteristics by annealing at $200{\sim}600^{\circ}C$. Both R phase ${\rightarrow}$ B19' martensitic transformation at lower temperature and B2 ${\rightarrow}$ R phase transformation at higher temperature occurred in the shape memory wires annealed at $200{\sim}500^{\circ}C$. Transformation temperature and heat flow of B19' martensite increase but those of R phase main almost constant even with increasing annealing temperature. In the case of wires annealed and then cooled to $20^{\circ}C$, plateau on stress-strain curves in tensile testing can be observed due to the collapse of R phase variants and the formation of deformation-induced B19' martensite. In the case of wires annealed and then cooled to $-196^{\circ}C$, however, plateau on stress-strain curves does not appear and stress increases steadily with increasing tensile deformation. Comparing shape recovery rate with cooling temperature after annealing, shape recovery rate of the wire cooled to $20^{\circ}C$ is higher than that of the wire cooled to $-196^{\circ}C$ after annealing, and maximum shape recovery rate of 95% appears in the wire annealed at $400^{\circ}C$ and then cooled to $20^{\circ}C$. $R_s$ and $R_f$ temperatures measured during shape recovery tests are higher than $A_s$ and $A_f$ temperatures measured by DSC tests even at the same annealing temperature.

• Journal of KIISE
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• v.42 no.11
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• pp.1314-1321
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• 2015

Mobile devices employ buffer cache mechanisms, just as in computer systems such as desktops or servers, to mitigate the performance gap between main memory and secondary storage. However, DRAM has a problem in that it accelerates battery consumption by performing refresh operations periodically to maintain the stored data. In this paper, we propose a novel buffer cache scheme to increase the battery lifecycle in mobile devices based on a hybrid main memory architecture consisting of DRAM and non-volatile PCM. We also suggest a new buffer cache policy that allocates buffers based on process states to optimize the performance and endurance of PCM. In particular, our algorithm allocates each page to the appropriate position corresponding to the state of the application that owns the page, and tries to ensure a rapid response of foreground applications even with a small amount of DRAM memory. The experimental results indicate that the proposed scheme reduces the elapsed time of foreground applications by 58% on average and power consumption by 23% on average without negatively impacting the performance of background applications.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.17 no.2
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• pp.1-6
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• 2017

Due to the recent advances in IoT technologies, reducing power consumption in battery-based IoT devices becomes an important issue. An IoT device is a kind of real-time systems, and processor voltage scaling is known to be effective in reducing power consumption. However, recent research has shown that power consumption in memory increases dramatically in such systems. This paper aims at combining processor voltage scaling and low-power NVRAM technologies to reduce power consumption further. Our main idea is that if a task is schedulable in a lower voltage mode of a processor, we can expect that the task will still be schedulable even on slow NVRAM memory. We incorporate the NVRAM memory allocation problem into processor voltage scaling, and evaluate the effectiveness of the combined approach.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.21-22
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• 2008

In the paper, we report several experimental data capable of evaluating the phase transformation characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x =0, 0.05, 0.1) thin films. The $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ phase change thin films have been prepared by thermal evaporation. The crystallization characteristics of amorphous$Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power; 1~17 mW, pulse duration; 10~460 ns) and XRD measurement. It was found that the more Ag is doped, the more crystallization speed was 50 improved. In comparision with $Ge_2Sb_2Te_5$ thin film, the sheet resistance$(R_{amor})$ of the amorphous $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were found to be lager than that of $Ge_2Sb_2Te_5$ film($R_{amor}$ $\sim10^7\Omega/\square$ and $R_{cryst}$ 10 $\Omega/\square$). That is, the ratio of $R_{amor}/R_{cryst}$ was evaluates to be $\sim10^6$ This is very helpful to writing current reduction of phase-change random acess memory.

• Korean Chemical Engineering Research
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• v.47 no.6
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• pp.715-719
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• 2009

The phase change electrode board for the bio-information detection through electrical property response of phase change material was developed in this study. We manufactured the electrode board using Aluminum first that is widely used in conventional semiconductor device process. Without further treatment, these aluminum electrodes tend to contain voids in PETEOS(plasma enhanced tetraethyoxysilane) material that are easily detected by cross-sectional SEM(Scanning Electron Microscope). The voids can be easily attacked and transformed into holes in between PETEOS and electrodes after etch back and washing process. In order to resolve this issue of Al electrode board, we developed a electrode board manufacturing method using low resistivity TiN, which has advantages in terms of the step-coverage of phase change($Ge_2Sb_2Te_5$, GST) thin film as well as thermodynamic stability, without etch back and washing process. This TiN material serves as the top and bottom electrode in PRAM(Phase-change Random Access Memory). The good connection between the TiN electrode and GST thin film was confirmed by observing the cross-section of TiN electrode board using SEM. The resistances of amorphous and crystalline GST thin film on TiN electrodes were also measured, and 1000 times difference between the amorphous and crystalline resistance of GST thin film was obtained, which is well enough for the signal detection.

• Applied Microscopy
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• v.29 no.4
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• pp.493-498
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• 1999

With increasing demand for fast and reliable, yet economical data storage devices, the role of optical disk technology is becoming more important. In recent years, advanced laser technology combined with new materials has given the competitive edge over the traditional magnetic memory devices both in memory capacity and reliability of data retrieval. Continuing effort is being put into developing smaller and more complex structures for optical disks to increase their memory density. Characterization of such multilayered structure requires not only high spatial resolution for observation but also laborious specimen preparation. In this paper, the method of preparing optical disk specimens for TEM characterization is described in detail. The microstructural features in optical disks observed by TEM are also discussed.

• Smart Structures and Systems
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• v.30 no.3
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• pp.245-253
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• 2022

A two-layer beam consisting of an elastoplastic layer and a functional layer made of shape memory alloy (SMA) TiNi is considered. Constitutive relations for SMA are set by a microstructural model capable to calculate strain increment produced by arbitrary increments of stress and temperature. This model exploits the approximation of small strains. The equations to calculate the variations of the strain and the internal variables are based on the experimentally registered temperature kinetics of the martensitic transformations with an account of the crystallographic features of the transformation and the laws of equilibrium thermodynamics. Stress and phase distributions over the beam height are calculated by steps, by solving on each step the boundary-value problem for given increments of the bending moment (or curvature) and the tensile force (or relative elongation). Simplifying Bernoulli's hypotheses are applied. The temperature is considered homogeneous. The first stage of the numerical experiment is modeling of preliminary deformation of the beam by bending or stretching at a temperature corresponding to the martensitic state of the SMA layer. The second stage simulates heating and subsequent cooling across the temperature interval of the martensitic transformation. The curvature variation depends both on the total thickness of the beam and on the ratio of the layer's thicknesses.