• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.122-122
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• 1993

Perovskite형 PMN 은 약 -12$^{\circ}C$에서 Curie 최대치를 (Tm)를 가지며 1KHz에서 매우 5598;은 유전상수(~18000)를 갖기 때문에 유전체로의 응용이 큰데, PMN의제조시 쉽게 생성되는 Pyrochlore상은 일반적으로 매우 낮은 유전률(⊆210)을 가져 계의 전체 유전률을 크게 저하시키는 것으로 알려져 있으며 이런 이유로 이제까지의 연구의 초점의 주로 제조공정중 Pyrochlore 상의 첨가량 및 입자크기에 따른 PMN-Pyrechlore 2상혼합체에서 Prochlore 상의부피분률을 변화시킬 때 유전물의 변화률 GEM(General Effective Media)식을 이용하여 논의하고자한다. Pyrochlore상의 입자크기가 클 경우 2상혼합체 PMN 의 유전률은 Pyrocholre 상의 양이 증가함에 따라 서서히 감소하였으나 입자크기가 작은 겨우 급겨한 갑소를 보였다. 결국 2상의 입자크기 차이는 2상혼합체인 PMN의유전류과 밀접하 ㄴ관계가 있으며. 또한 유전률이 급격히 떨어지는 임계부피분률이 달라짐을 확인할 수 있었다. 또한 Pyrochlore상의첨가량이 증가함에 따라 2상혼합체인 PMN의 유전률의 변화는 GEM식 적용에 있어서는 임계부피률과 t값을 정확히 정하는 것이 중요한데 임계부피분률의 설정은 Perovskite PMN 과 Pyrochlore상의 입자 크기비를 이용하여 Kusy 이론을 기초로 결정하였으며, t 값은 퍼콜레이션 Power-law식에 적용시켜 정하였다였다

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.582-586
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• 1995

The crystal structures of (Na0.3Sr0.7)(Ti0.7M0.3)O3 (M=Ta, Nb) compounds were determined using the Rietveld method. Due to the tilting of a oxygen octahedron, (Na0.3Sr0.7)(Ti0.7Nb0.3)O3 had a superlattice of doubled a, b and c of simple perovskite. The crystal structure of (Na0.3Sr0.7)(Ti0.7M0.3)O3 was tetragonal with a space group 14/mmm. The crystal structure of (Na0.3Sr0.7)(Ti0.7M0.3)O3 was a cubic with space group Pm3m, in which no tilting of oxygen octahedron was observed. The difference in the oxygen tilting of these two materials was due to the larger covalency of Nb-O bond than that of Ta-O bond, which induced a strong $\pi$Nb0 bonding in (Na0.3Sr0.7)(Ti0.7M0.3)O3. Therefore, the higher transition temperature of (Na0.3Sr0.7)(Ti0.7M0.3)O3 could be related to the larger tilting of oxygen octahedron.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.308-314
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• 2015

The electrochemical performance and Cr poisoning behavior of $La_{1-x}Ba_xCo_{0.9}Fe_{0.1}O_{3-{\delta}}$ (LBCF, x = 0.3, 0.4, 0.5) and $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-{\delta}}$ (LSCF) cathodes were investigated for solid oxide fuel cells (SOFCs). The polarization resistance of the LBCF/GDC/LBCF symmetrical cell was found to decrease with increasing Ba content (x value). This phenomenon might be associated with the high oxygen vacancy concentration in the LBCF sample, with x = 0.5. In addition, there was no chromium poisoning in the LBCF cathode. On the other hand, the polarization resistance of the LSCF cathode was found to significantly increase after exposure to gaseous chromium species; it appears that this result stemmed from the formation of $SrCrO_4$ phase. Therefore, it can be expected that LBCF can be a durable potential cathode material for intermediate-temperature solid oxide fuel cells (IT-SOFC).

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.11
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• pp.2093-2096
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• 2011

In this study, lead-free $(Na_{0.5}K_{0.5})NbO_3-BiTiO_3$ ceramics were fabricated by a conventional mixed oxide method. Structural and electrical properties of lead-free $(Na_{0.5}K_{0.5})NbO_3$ ceramics with the variation of $BiTiO_3$ were investigated. The results of X-ray diffraction analysis showed a typical polycrystalline perovskite structure without presence of the second phase in all specimens. Sintered density increased with an increasing of BTO and the specimen added with 0.07 mol% of $BiTiO_3$ showed the maximum value of 97.8%. Average grain size decreased and densification increased with an increasing of $BiTiO_3$ contents. The electromechanical coupling factor of the 0.01 mol% $BiTiO_3$ doped NKN specimens was 0.32. Dielectric constant, dielectric loss and Curie temperature of the 0.07 mol% $BiTiO_3$ doped NKN specimens were 1185, 0.145% and $400^{\circ}C$, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.12
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• pp.553-558
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• 2003

The A S $r_{0.7}$B $i_{2.6}$T $a_2$ $O_{9}$ (SBT)thin films are deposited on Pt-coated electrode(Pt/$TiO_2$/$SiO_2$/Si) using a RF magnetron sputtering method. The electrical properties of SBT capacitors with top electrodes were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at 75$0^{\circ}C$ and grains largely grew in oxygen annealing atmosphere. The electrical properties of SBT capacitor with top electrodes represent a favorable properties in Pt electrode. The maximum remanent polarization and the coercive electric field with Pt electrode are 12.40C/$\textrm{cm}^2$ and 30kV/cm, respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 6.8110$^{-10}$ A/$\textrm{cm}^2$, respectively.y.y.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.592-597
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• 2000

In this study (B $a_{0.5}$/S $r_{0.5}$)Ti $O_3$[BST(50/50)] ceramic thin films were prepared by the Sol-Gel method BST(50/50) stock solution was made and spin-coated on the Indium Tin Oxide(ITO)/glass substrate at 4000 rpm for 30 seconds. The coated films were dried at 35$0^{\circ}C$ for 10 minutes and annealed at 650~75$0^{\circ}C$ for 1 hour. The microstructural properties of the BST(50/50) thin film were studied by the XRD and AFM. The ferroelectric perovskite phase was formed at the annealing condition of 75$0^{\circ}C$ for 1 hour. Dielectric constant and loss of this thin were 370, 3.7% at room temperature respectively. The polarization switching voltage showed the good value of 3V. The leakage current density of the BST(50/50) thin film was 10$^{-7A}$c $m^2$with applied voltage of 1.5V. BST(50/50) thin film capacitors having good dielectric and electrical properties are expecting for the application to the dielectric material of DRAM.RAM.M.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.49-52
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• 2003

The role of gas ratio with the crystallization behavior and electrical properties in $Bi_{3.25}La_{0.75}Ti_3O_{12}$(BLT) thin films by rf magnetron sputtering method has not been precisely defined. In this work, the ferroelectric properties of these films with gas variation was investigated. BLT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all BLT films indicated perovskite polycrystalline structure with preferred orientation (020) and (0012). And no pyrochlore phase was observed. The fabricated film annealed with $O_2$ of 15 sccm showed that value of leakage current was $9.67{\times}10^{-7}A/cm^2$ at 50kV /em, and the value of remanent polarization (2Pr=Pr+-Pr-) was $11.8{\mu}C/cm^2$. Therefore we induce access to memory device application by rf-magnetron sputtering method in this report.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1881-1883
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• 2005

In this study, PZT thin films were fabricated using sol-gel Processing onto $Si/SiO_2/Ti/Pt$ substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}\;A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.10
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• pp.615-619
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• 2015

In this study, in order to develop the composition ceramics with the excellent electrocaloric properties, 8/65/35 PLZT ceramics were fabricated by the conventional solid-state method with the addition of $Bi_2O_3$, CuO, $Li_2CO_3$ and the variation of sintering temperature from $930^{\circ}C$ to $990^{\circ}C$. The XRD pattern of all specimens indicated general perovskite structure and the rhombohedral phase were observed. Curie temperature ($T_c$) of all specimens was observed in the vicinity of about $190^{\circ}C$. Density, coercive field and remnant polarization of the specimen sintered at $950^{\circ}C$ was $7.55g/cm^3$, 8.895 kV/cm, $11.22{\mu}C/cm^2$, respectively. EC effect of PLZT ceramics was measured by indirect method and the temperature change ${\Delta}T$ due to the electrocaloric effect was calculated by Maxwell's relations. ${\Delta}T$ of ceramic sintered at $950^{\circ}C$ was $0.21^{\circ}C$ under application of 40 kV/cm at $190^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1562-1564
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• 2003

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C,\;650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.