• Journal of Navigation and Port Research
• /
• v.34 no.2
• /
• pp.111-115
• /
• 2010

In this paper, the electromagnetic (EM) wave absorbers using TiO2 as a dielectric material with chlorinated polyethylene (CPE) were investigated in W-band radio frequencies. We compared the relative permittivity with reflectionless curve and the absorption properties of samples containing 40 wt.%, 50 wt.%, 60 wt.%, 70 wt.%, and 80 wt.% TiO2. It is possible to realize a complex relative permittivity satisfying the reflectionless condition by choosing composition ratio of TiO2. The optimized composition ratio of TiO2 for the maximum absorption property is about 70 wt.%. As a result, we have confirmed the realization of an EM wave absorber with a high absorption property in W-band radio frequencies.

• Journal of electromagnetic engineering and science
• /
• v.8 no.3
• /
• pp.110-113
• /
• 2008

In this paper, we designed and fabricated an electromagnetic(EM) wave absorber for automotive radar in cars using $TiO_2$ as a dielectric material and chlorinated polyethylene(CPE) as a binder. First of all, we confirmed that the optimum composition ratio of $TiO_2$ was about 70 wt.%. The complex relative permittivity of a sample containing $TiO_2$: CPE=70:30 wt.% was calculated from S-parameter. The EM wave absorption abilities were simulated for the EM wave absorbers of different thickness using the calculated relative permittivity, and the EM wave absorber was manufactured based on the simulated design. A comparison of simulated and measured results is in good agreement. Measurement shows that a 1.85 mm thick absorber has absorption ability higher than 20 dB in the frequency range of $76{\sim}77$ GHz for automotive radars.

• Electrical & Electronic Materials
• /
• v.10 no.6
• /
• pp.570-575
• /
• 1997

In this days, the thinner film of dielectric materials is required while its capacitance is required to be still large at the VLSI process. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method. SiO of the SiO/TiN film is used as the insulating layer and TiN is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of its relatively low specific resistance. In this study their electrical and optical characteristics are investigated to find refractive index, absorption coefficient and Permittivity.

• Electrical & Electronic Materials
• /
• v.11 no.10
• /
• pp.94-99
• /
• 1998

Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higherpermittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and hot carrier effect measurements were done on 190 layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide (TTIP). Measurements of the high and low frequency capacitance indicate that virtually no interface state are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
• /
• 2002.11a
• /
• pp.329-334
• /
• 2002

This study evaporates TiO$_2$ layer thickness differently with RF sputtering method on Si Wafer(n-100). Thin film is made with the structure of Si+TiO$_2$ and Si+TiO$_2$+Al by evaporating TiN which is used as Antireflection of superintegrated semiconductor integrated circuit with Photo Catalyst. The research is performed to increase the characteristics of photon energy according to TiO$_2$ thickness and the reliability and reproducibility of TiO$_2$ thin film. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant ($\varepsilon$$_1$, $\varepsilon$$_2$) has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• Journal of the Korean Vacuum Society
• /
• v.4 no.S1
• /
• pp.138-144
• /
• 1995

It is commonly believed that high permittivity materials will be necessary for future high density Gbit DRAMs. In a first part, we explain the choice of SrTiO3 by ECR MOCVD for Gbit-scale DRAMs. In a second part, after describing the ECR MOCVD system and presenting the requirements SrTiO3 thin films should meet for use in Gbit-scale DRAMs, the physical and electrical properties of srTiO3 thi film prepared by ECR MOCVD are then studied. A stacked capacitor technology, suitable for use in 1 Gbit DRAM, and comprising high permittivity SrTiO3 thin films prepared by ECR MOCVD at $450^{\circ}C$ on electron beam and RIE patterned RuO2/TiN storage nodes is finally described.

• Journal of the Korean Vacuum Society
• /
• v.10 no.2
• /
• pp.207-212
• /
• 2001

In this study, synthesis condition of $TiO_2$ thin films which have optimal dielectric characteristics using sol-gel method was determined. Thin films were fabricated using sol which have optimal characteristics and their permittivity was measured. In case of the amount of water for hydrolysis smaller than that for stoichiometry, sol formed clear sol which have normal chain structure. On the contrary, in case of the amount of water for hydrolysis larger than that for stoichiometry, sol formed suspended sol which have cluster structure. The permittivity of thin films increased exponentially around $^{\circ}C$.

• Proceedings of the KIEE Conference
• /
• 2004.11a
• /
• pp.79-81
• /
• 2004

$TiO_2-SnO_2$ thin films are fabricated using sol-gel method. The thickness of thin films increase about $0.03{\sim}0.04{\mu}m$ every a dipping. The permittivity and dissipation factor of $TiO_2-SnO_2$ thin films decrease with increasing frequency. Thin films show semiconductive characteristics above $400^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.1148-1151
• /
• 2002

Dielectric ceramics with nominal composition of $(Ba_{0.93}Sr_{0.07}O)-0.5Sm_2O_3-4.5TiO_2$ was prepared using the conventional mixed oxide process-derived powder. Effect of $SiO_2$, $MnO_2$ and $Al_2O_3$ impurity addition on the microwave properties was examined in some detail. Measured relative permittivity $(\varepsilon_r)$ values were in the range of 53 to 59 and showed little dependence on impurity addition. In contrast, quality factor $(Q{\cdot}f)$ and temperature coefficient of resonant frequency $(\tau_f)$ values were greatly influenced by the type and the amount of impurities. It was found that 0.1~0.2wt% addition of $Al_2O_3$ was most effective for improving the properties, where ${\varepsilon}_r$, $Q{\cdot}f$ and $\tau_f$ values were 57.7, 10000, and +7ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2008.05a
• /
• pp.117-120
• /
• 2008

In this paper, we developed the EM wave absorber for eliminating false images in collision-avoidance radar. First of all, we fabricated some samples in different composition ratio of $TiO_2$ and CPE. And the relative permittivities of samples are calculated from S-parameter of samples by using 1-port method. We designed and fabricated the EM wave absorber by using the calculated relative permittivity. As a result, the EM wave absorber with composition of $TiO_2$:CPE=70:30 wt% has thickness of 1.85 mm and absorption ability higher than 20 dB in the frequency range 76-77 GHz.