• The Journal of Korean Academy of Prosthodontics
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• v.43 no.5
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• pp.684-693
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• 2005

Statement of problem: Ti-6Al-7Nb alloy is used instead of Ti-6Al-4V alloy that was known to have toxicity. Purpose: This study was performed to investigate the effect of electrolyte concentration on the surface characteristics of anodized and hydrothermally-treated Ti-6Al-7Nb alloy Materials and methods: Discs of Ti-6Al-7Nb alloy of 20 mm in diameter and 2 mm in thickness were polished sequentially from #300 to 1,000 SiC paper ultrasonically washed with acetone and distilled water for 5 min, and dried in an oven at $50^{\circ}C$ for 24 hours. Anodizing was performed at current density $30mA/cm^2$ up to 300 V in electrolyte solutions containing $\beta-glycerophosphate$ disodium salt hydrate $(\beta-GP)$ and calcium acetate (CA). Hydrothermal treatment was conducted by high pressure steam at $300^{\circ}C$ for 2 hours using a autoclave. All samples were soaked in the Hanks' solution with pH 7.4 at $36.5^{\circ}C$ for 30 days. Results and conclusion: The results obtained were summarized as follows: 1. After hydrothermal treatment, the precipitated HA crystals showed the dense fine needle shape. However, with increasing the concentration of electrolyte they showed the shape of thick and short rod. 2. When the dense fine needle shape crystals was appeared after hydrothermal treatment, the precipitation of HA crystals in Hanks' solution was highly accelerated. 3. The crystal structures of $TiO_2$ in anodic oxide film were composed of strong anatase peak and weak rutile peak as analyzed with thin-film X-ray diffractometery. 4. The Ca/P ratio of the precipitated HA layer was equivalent to that of HA crystal in Hanks' solution.

• Transactions on Electrical and Electronic Materials
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• v.10 no.1
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• pp.28-30
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• 2009

We have studied organic layer-thickness dependent electrical and optical properties of bottom- and top-emission devices. Bottom-emission device was made in a structure of ITO(170 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(100 nm), and a top-emission device in a structure of glass/Al(100 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(25 nm). A hole-transport layer of TPD (N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine) was thermally deposited in a range of 35 nm and 65 nm, and an emissive layer of $Alq_3$ (tris-(8-hydroxyquinoline) aluminum) was successively deposited in a range of 50 nm and 100 nm. Thickness ratio between the hole-transport layer and the emissive layer was maintained to be 2:3, and a whole layer thickness was made to be in a range of 85 and 165 nm. From the current density-luminance-voltage characteristics of the bottom-emission devices, a proper thickness of the organic layer (55 nm thick TPD and 85 nm thick $Alq_3$ layer) was able to be determined. From the view-angle dependent emission spectrum of the bottom-emission device, the peak wavelength of the spectrum does not shift as the view angle increases. However, for the top-emission device, there is a blue shift in peak wavelength as the view angle increases when the total layer thickness is thicker than 140 nm. This blue shift is thought to be due to a microcavity effect in organic light-emitting diodes.

• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.203-207
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• 2009

We have investigated the effect of ambient gases on the structural, electrical, and optical characteristics of ITO thin films intended for use as anode contacts in OLED (organic light emitting diodes) devices. These ITO thin films are deposited by radio frequency (RF) magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at $300{^{\circ}C}$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.5 sccm to 5 sccm and from 0.01 sccm to 0.25 sccm, respectively. The intensity of the (400) peak in the ITO thin films increased with increasing $O_2$, flow rate whilst the (400) peak was nearly invisible in an atmosphere of Ar+$H_2$. The electrical resistivity of the ITO thin films increased with increasing $O_2$ flow rate, whereas the electrical resistivity decreased sharply under an Ar+$H_2$ atmosphere and was nearly similar regardless of the $H_2$ flow rate. The change of electrical resistivity with changes in the ambient gas composition was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed an average transmittance of over 80% in the visible range. The OLED device was fabricated with different ITO substrates made with the configuration of ITO/$\alpha$-NPD/DPVB/$Alq_3$/LiF/Al in order to elucidate the performance of the ITO substrate. Current density and luminance of OLED devices with ITO thin films deposited in Ar+$H_2$ ambient gas is the highest among all the ITO thin films.

• Progress in Superconductivity and Cryogenics
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• v.9 no.2
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• pp.23-26
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• 2007

The influence of water partial pressure in Metal-organic Deposition (MOD) method was investigated on the texture and the morphology of $YBa_2Cu_3O_{7-x}$ (YBCO) films grown on the buffered metal tapes. The water partial pressure was varied from 4.2% up to 10.0% with the other process variables, such as annealing temperature and oxygen partial pressure, kept constant. In this work, the fluorine-free Y & Cu precursor solution added with Sm was synthesized and coated by the continuous slot-die coating & calcination step. The next annealing step of the YBCO films was done by the reel-to-reel method with the gas flowed vertically down. From the x-ray diffraction analysis, the un-reacted phase like $BaF_2$ peak was found at the water partial pressure of 4.2%, but $BaF_2$ peak intensity is much reduced as the water partial pressure is increased. However, the higher water partial pressure of about 10% in this experiment leads to the poor crystallinity of YBCO films. The morphologies of the YBCO films were not different from each other when the water partial pressure was varied in this work. The maximum critical current density of 3.8MA/$cm^2$ was obtained at the water partial pressure of 6.2% with the annealing temperature of 780$^{\circ}C$ and oxygen partial pressure of 500ppm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.185-190
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• 2016

A 70-${\AA}$ nanowire field-effect transistor (FET) for sub-10-nm CMOS technology is designed and simulated in order to investigate the impact of an oxide trap on random telegraph noise (RTN) in the device. It is observed that the drain current fluctuation (${\Delta}I_D/I_D$) increases up to a maximum of 78 % due to the single electron trapping. In addition, the effect of various trap positions on the RTN in the nanowire FET is thoroughly analyzed at various drain and gate voltages. As the drain voltage increases, the peak point for the ${\Delta}I_D/I_D$ shifts toward the source side. The distortion in the electron carrier density and the conduction band energy when the trap is filled with an electron at various positions in the device supports these results.

• Progress in Superconductivity
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• v.11 no.1
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• pp.8-12
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• 2009

We investigated the effects of the irradiation of light-ions on the superconducting $MgB_2$ thin films fabricated by using HPCVD. Deuterium and helium ions were irradiated on $MgB_2$ thin films by various doses, from $1{\times}10^{10}cm^{-2}\;to\;8{\times}10^{15}cm^{-2}$. During these experiments some reasonable results and unpredictable results have been obtained. The reasonable results are that the peak of the reduced maximum pinning force shifts by increasing the pinning sites in $MgB_2$ films and the slightly change of critical current density of films. We obtained some unusual results, which are the increasing of the transition temperature and the change of residual resistance ratio. Among the data of deuterium and helium ion irradiation experiments, the results of helium ion irradiation have most notable points so we will discuss mainly about helium irradiation experiments.

• Journal of Electrochemical Science and Technology
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• v.11 no.3
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• pp.238-247
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• 2020

Some nano structured bimetallic NiPd electrocatalysts were electrodeposited on glassy carbon electrodes using a double potential step chronoamperometry. The morphology of the electrodeposited samples was investigated by field emission-scanning electron microscopy, while their compositions were evaluated using energy dispersive X-ray spectroscopy. It was observed that the electrodeposited samples contained a low Ni content, in the range of 0.80 - 7.10%. The electrodeposited samples were employed as the anode electro-catalysts for the oxidation of sodium borohydride in NaOH solution (1.0 M) using cyclic voltammetry, chronoamperometry, rotating disk electrode, and impedance spectroscopy. The number of exchanged electrons, charge transfer resistances, apparent rate constants, and double layer capacitances were calculated for the oxidation of borohydride on the prepared catalysts. According to the results obtained, the NiPd-2 sample with the lowest Ni content (0.80%), presented the highest catalytic activity for borohydride oxidation compared with the other NiPd samples as well as the pure Pd sample. The anodic peak current density was obtained to be about 1.3 times higher on the NiPd-2 sample compared with that for the Pd sample.

• Journal of the Korean Ceramic Society
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• v.33 no.6
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• pp.665-671
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• 1996

Ferroelectric Pb(Fe1/2Nb1/2)O3 thin films were successfully fabricated on ITO/Glass substrate by sol-gel proces-sing and characterized to determine the dielectric and electric properties. Viscosity of PEN sol measured to investigate rheological properties was 3.25 cP which was proper for coating. The sol also showed Newtonian behavior. RTA(Rapid Thermal Annealing) was used for the annealing of the thin film and 1200~1700$\AA$ thick PEN thin films were fabricated by repeating the intermediate and the final annealing. After the deposition of Pt as top electrode by vacuum evaporation dielectric and electric properties were measured. Dielectric properties of FFN thin film were enhanced by increasing the perovskite phase fraction with increasing the annealing temperature. Measured dielectric constant of 1700$\AA$ PFN thin film annealed at $650^{\circ}C$ was 890 at 1kHz Capacitatnce density and dielectric loss were 47 fF/${\mu}{\textrm}{m}$2 and 0.47 respectively. As a result of measuring Curie temperature PFN thin films had Curie point with a rang of 110~12$0^{\circ}C$ and showed broad dielectric peak at that point. Leakage current of the PFN thin films were increased with increasing the annealing tempera-ture.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1518-1520
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• 2001

Bi-layer Mo films were deposited on sodalime glass substrates using DC magnetron sputtering. As the gas pressure and power density, the resistivity varied from $1.5{\times}10^{-5}$ to $4.97{\times}10^{-4}{\Omega}{\cdot}cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The microstructure of the compressive stress films which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. Also, The highest efficiency was 15.2% on 0.2 $cm^2$. The fill factor, open circuit voltage and short circuit current were 63 %, 570 mV and 42.6 mA/$cm^2$ respectively.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.145-148
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• 2010

White organic light emitting devices were fabricated to improve the stability through a structural change using the two peak emission method. The fabricated devices were composed of indium tin oxide (100 nm)/ $\alpha$-NPD (30 nm)/4,40-bis(2,20-diphenylvinyl)-1,10-biphenyl (DPVBi, d: variable)/DPVBi: Rubrene (40 nm)/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline(5 nm)/ $Alq_3$(5 nm)/ Al (100 nm). A DPVBi for blue emissions was used as the host material in the emitters. The doping concentration of the Rubrene was fixed at 2.0% (by weight). The white emission with Commission Internationale De L'Eclairage coordinates of (0.3342, 0.3439) occurred at 14 V with a thickness d of 1 nm. It was insensitive to the drive voltage, and the devices had a maximum luminance of $211\;cd/cm^2$. At 19 V, the current density and maximum external quantum efficiency were $173\;mAcm^2$ and 0.478%, respectively.