• Journal of the Korean institute of surface engineering
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• v.39 no.6
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• pp.255-262
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• 2006

Pd-Cu alloy membrane for hydrogen separation was fabricated by sputtering and Cu reflow process. At first, the Pd and Cu was continuously deposited by sputtering method on oxidized Si support, the Cu reflow process was followed. Microstructure of the surface and permeability of the membrane was investigated depending on various reflow temperature, time, Pd/cu composition and supports. With respect to our result, Pd-Cu thin film (90 wt.% Pd/10 wt.% Cu) deposited by sputtering process with thickness of $2{\mu}m$ was heat-treated for Cu reflow The voids of the membrane surface were completely filled and the dense crystal surface was formed by Cu reflow behavior at $700^{\circ}C$ for 1 hour. Cu reflow process, which is adopted for our work, could be applied to fabrication of dense Pd-alloy membrane for hydrogen separation regardless of supports. Ceramic or metal support could be easily used for the membrane fabricated by reflow process. The Cu reflow process must result in void-free surface and dense crystalline of Pd-alloy membrane, which is responsible for improved selectivity oi the membrane.

• Journal of Magnetics
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• v.8 no.4
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• pp.146-148
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• 2003

Multilayered films of Co/Pd have been studied as a candidate material for a high density perpendicular recording medium due to higher anisotropy energy. However, high exchange coupling among grains results in large transition noise. To reduce the exchange coupling and grain size, addition of 3rd elements and physical separation of grains have been attempted. In the present paper, effects of sputtering pressure, Co sublayer thickness and Pd underlayer thickness on magnetic properties and microstructures were studied. It was found that by increasing sputtering pressure from 5 mTorr to 25 mTorr, Ms decreased to one half and coercivity increased more than 5000 Oe. The increase of the coercivity is associated with physical separation of grains by high pressure sputtering. Ms per volume of Co for Co/Pd multilayered film deposited at 25 mTorr shows continuous decrease with increasing Co sublayer thickness. This was related to void formation and intermixing of Co/Pd interface. Also, effect of Pd underlayer thickness on magnetic properties will be discussed.

• Journal of the Korean Magnetics Society
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• v.6 no.4
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• pp.235-241
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• 1996

Co/Pd and Co/Pt multilayered thin films for perpendicular magnetic recording media were fabricated by sput¬tering method and the effects of the sputtering pressure during the formation of Pd or Pt underlayers on the magnetization behavior and coercivity of the multilayers were investigated. It was found that the coercivity of Co/Pd multilayers was strongly dependent on the sputtering pressure of underlayer and could be enhanced to a large extent merely by increasing the sputtering pressure of underlayer, while in case of Co/Pt films, the degree of coercivity enhancement by controlling the sputtering pressure of underlayer was almost negligible. Coercivity variation of Co/Pd and Co/Pt multilayers with the underlayer material and deposition pressure of underlayer could be well explained in terms of the interface roughness of multilayer films induced by underlayer topology, which could also be correlated to the change of perpendicular anisotropy energy and magnetic reversal feature with the sputtering pressure of underlayer. Kerr rotation angle was hardly affected by the preparation conditions of underlayers.

• Journal of the Korean institute of surface engineering
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• v.46 no.6
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• pp.248-257
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• 2013

It is generally recognized that thin Pd-Cu alloy films fabricated by sputtering show a wide range of microstructures and properties, both of which are highly dependent on the sputtering conditions. In view of this, the present study aims to investigate the relationship between the performance of hydrogen separation membranes and the microstructure of Pd alloy films depending on sputtering deposition conditions such as substrate temperature, working pressure, and DC power. We fabricated thin and dense Pd-Cu alloy membranes by the micro-polishing of porous Ni support, an advanced Pd-Cu sputtered multi-deposition under the conditions of high substrate temperature / low working pressure / high DC power, and a followed by Cu-reflow heat-treatment. The result of a hydrogen permeation test indicated that the selectivity for $H_2/N_2$ was infinite because of the void-free and dense surface of the Pd alloy membranes, and the hydrogen permeability was 10.5 $ml{\cdot}cm^{-2}{\cdot}min^{-1}{\cdot}atm^{-1}$ for a 6 ${\mu}m$ membrane thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.488-493
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• 2022

Generally, diamond-like carbon films (a-C:H, DLC) have been shown to have a low coefficient of friction, a high hardness and a low wear rate. Pd-doped C thin film was fabricated using a dual magnetron sputtering with two targets of graphite and palladium. Graphite target RF power was fixed and palladium target RF power was varied. The structural, physical, and surface properties of the deposited thin film were investigated, and the correlation among these properties was examined. The doping ratio of Pd increased as the RF power increased, and the surface roughness of the thin film decreased somewhat as the RF power increased. In addition, the hardness value of the thin film increased, and the adhesive strength was improved. It was confirmed that the value of the contact angle indicating the surface energy increases as the RF power increases. It was concluded that the increase in RF power contributed to the improvement of the physical properties of Pd-doped C thin film.

• Journal of the Korean Magnetics Society
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• v.2 no.2
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• pp.119-124
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• 1992

We have investigated the effects of sputtering Ar gas pressure on magnetic and magneto-optical properties in compositionally modulated Co/Pd superlattice thin films. The samples were prepared by dc magnetron sputtering from 2-in.-diam Co and Pd targets by alternately exposing the substrates to targets. Sputtering Ar gas pressure was varied from 2 to 30 mTorr. All samples had same bilayer thicknesses composed of 2-$\AA$-thick Co and 9-$\AA$-thick Pd sublayers. It was observed that the colum-nar structure was more distinctively developed with increasing Ar gas pressure. We observed that the intrinsic uniaxial anisotropy energy, magnetization and polar Kerr rotation were decreased with increasing Ar gas pressures. Large coercivity and perfect squareness were attained by the deposition at the high Ar gas pressure. We believe that the results are mainly ascribed the variation of micro-structure with sputtering Ar gas pressure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.812-817
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• 2002

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.259-259
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• 2008

The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.256-262
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• 1994

$200{\AA}$ thick Co/Pd multilayered thin films were fabricated by sputtering. Two thicknesses of cobalt sublayer, $2{\AA}$ and $4{\AA}$ were chosen and the effects of sputtering pressure on the perpendicular magnetic anisotropy were investigated. It has been found that the optimum pressure for maximum perpendicular magnetic anisotropy(PMA) existed and the pressure for maximum PMA was lower for the multilayer with $2{\AA}$ cobalt layer than that with $4{\AA}$ cobalt thickness. As the sputtering gas presssure increased, domain wall motion with magnetization became difficult and the predominant mode of magnetization reversal changed from domain wall motion to magnetic moment rotation. It turned out that the perpendicular magnetic anisotropy was higher in case of $2{\AA}$ cobalt thickness than $4{\AA}$ cobait thickness.

• Journal of the Korean Ceramic Society
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• v.30 no.9
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• pp.701-708
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• 1993

Pd-doped SnO2 thin films for hydrogen gas sensing were fabricated by reactive fo magnetron sputtering and were studied on effects of film thickness and Pd doping content. Pd doping caused the optimum sensor operation temperature to reduce down to ~25$0^{\circ}C$ and also enhanced gas sensitivity, compared with undoped SnO2 film. Gas sensitivity depended on the film thickness. The sensitivity increased with decreasing the film thickness, showing maximum sensitivities at the thickness of 730$\AA$ and 300~400$\AA$ for the undoped SnO2 and the Pd-doped SnO2 film, respectively. Further decrease of the film thickness beyond these thickness ranges, however, resulted in the reduction of sensitivity again.