• 제목/요약/키워드: Pd germanide Schottky diodes

검색결과 1건 처리시간 0.017초

N형 Ge-on-Si 기판에 형성된 Pd Germanide의 열안정성 및 Schottky 장벽 분석 (Analysis of Thermal Stability and Schottky Barrier Height of Pd Germanide on N-type Ge-on-Si Substrate)

  • 오세경;신홍식;강민호;복정득;정의정;권혁민;이가원;이희덕
    • 한국전기전자재료학회논문지
    • /
    • 제24권4호
    • /
    • pp.271-275
    • /
    • 2011
  • In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricated on n-type Ge-on-Si substrates and the formed Pd germanide shows thermal immunity up to $450^{\circ}C$. The barrier height of Pd germanide is also characterized using two methods. It is shown that Pd germanide contact has electron Schottky barrier height of 0.569~0.631 eV and work function of 4.699~4.761 eV, respectively. Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.