• Journal of the Korean Chemical Society
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• v.30 no.3
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• pp.320-326
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• 1986

The antitumor properities of metal are not limited to Pt(II) complexes. Recently, it was reported that some Pt(II) and Pd(II) complexes with sulfur and nitrogen ligands had potential antitumor reactivity. Pt(II) complexes is toxic drug for anticancer. Therefore, the complexes of Pd(II) with adenine, uracil, cytosine and malonate ligands are interesting for anticancer drug. We synthesized new palladium complexes containing nucleosides. The reactions of Pd(II) with adenine, uracil, cytosine and malonate ligands have been studied in aqueous solutions. The complexes isolated from these reactions have the following formulas; $[Pd(en)(C_5H_5N_5)_2](NO_3)_2,\;[Pd(en)(C_4H_3N_2O_2)Cl],\;[Pd(en)(C_3H_2O_4)]\;and\;[Pd(en)(C_4H_5N_3O)_2](NO_3)_2{\cdot}(C_4H_5N_3O)$. The compounds have been identified by elemental analysis, mass spectra, infrared spectra and electronic spectra.

• Korean Journal of Metals and Materials
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• v.50 no.10
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• pp.711-720
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• 2012

In this study, the effect of aging treatment on the microstructure and tensile properties of AZ61-xPd (x = 0, 1 and 2 wt%) alloys were investigated. The microstructure of as-cast AZ61-xPd alloys mainly consisted of ${\alpha}-Mg$, $Mg_{17}Al_{12}$ and $Al_4Pd$ phases. After solution treatment, most of the $Mg_{17}Al_{12}$ phases were dissolved into the Mg matrix. Thereafter, $Mg_{17}Al_{12}$ phases were finely formed and distributed near thermally stable $Al_4Pd$ phases and inside the grains through aging treatment at $220^{\circ}C$ during 88 hours. With the aging at $220^{\circ}C$, the peak aged AZ61-xPd alloys showed higher hardness than as-cast and solution treated AZ61-xPd alloys. In particular, the AZ61-1Pd alloy was optimized due to refined $Mg_{17}Al_{12}$ and $Al_4Pd$ phases. Further, the peak aging time was reduced with increasing Pd addition (>1 wt%). Tensile strength was increased by Pd addition at $25^{\circ}C$, $150^{\circ}C$, both as-cast and peak aged AZ61-xPd alloys. After aging treatment, room and high temperature tensile strength were increased more than the as-cast specimens. The AZ61-1Pd alloy especially showed the largest strength increase range. Elongation was decreased with addition Pd at $25^{\circ}C$ and $150^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.23 no.12
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• pp.1754-1758
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• 2002

Tetrathiafulvalene(TTF) reacts with $PdCl_2,Pd(NO_3)_2$ and $Pd(hfacac)_2$(hexafluoroacetylacetonate) in ethanol to give $(TTF)_{1.5}PdCl_2$ (1a), $(TTF)_3Pd(NO_3)_2$ (1b) and $(TTF)_4Pd(hfacas)_2$ nd (1c), respectively. $PdCl(TCNQ)_{2.5}{\cdot}CH_3OH(2a)$was obtained from the reaction of $PdCl_2$ with LiTCNQ in methanol via the partial replacement of $Cl^-$ in $PdCl_2$ by $TCNQ^-$anion, whereas the total substitution of the labile $NO_3^-$ in $Pd(NO_3)_2$ yielded pd(TCNQ)·$CH_3OH$ (2b). $Pd(hfacac)_2(TCNQ)_2\cdot3CH_3OH$ (2c) was obtained from $Pd(hfacac)_2$ and LiTCNQ in methanol. The prepared compounds were characterized by spectroscopic (IR, UV, XPS) methods and magnetic (EPR, magnetic susceptibility) studies. The powdered electrical conductivities (${\sigma}_{rt}$) of the prepared compounds at room temperature were about~$10^{-7}S{\cdot}cm^{-1}$. The effective magnetic moments were lass than the spin-only value of one unpaired electron and no EPR signals from Pd metal ions were observed in any of the compounds, indicating that the Pd ions were diamagnetic and the magnetic moments arose from$(TTF)_n$ or $(TCNQ)_n$ moieties. The experimental evidences revealed that the charge transfer had occurred form $(TTF)_n$ moiety to the central Pd metal ion in 1a, 1b and 1c. Thus the TTF donors were ions in 2a and 2b were diamagnetic Pd(II) oxidation state. In contrast, the Pd metal ion was oxidized to Pd(IV) state in 2c as a result of an addition of $TCNQ^-$anion to $Pd(hfacac)_2$ in methanol. The oxidation states of the Pd metal ions were confirmed using the x-ray photoelectron spectroscopy.

• Journal of Electrochemical Science and Technology
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• v.11 no.1
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• pp.84-91
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• 2020

The PtBi/C and PtBiPd/C electrocatalysts were synthesized via the irreversible adsorption of Pd and Bi ions precursors on commercial Pt/C catalysts. XRD and XPS revealed the formation of an alloy structure among Pt, Bi, and Pd atoms. The current of direct formic acid oxidation (I_d) increased ~ 8 and 16 times for the PtBi/C and PtBiPd/C catalysts, respectively, than that of commercial Pt/C because of the electronic, geometric, and third body effects. In addition, the increased ratio between the current of direct formic acid oxidation (I_d) and the current of indirect formic acid oxidation (I_ind) for the PtBi/C and PtBiPd/C catalysts suggest that the dehydrogenation pathway is dominant with less CO formation on these catalysts.

• Journal of IKEEE
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• v.22 no.2
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• pp.356-361
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• 2018

We investigated a hydrogen gas sensor which is available in a high temperature atmosphere. The hydrogen sensors were fabricated into a metal-oxide-semiconductor (MOS) structure made of $Pd/Ta_2O_5/SiC$, and the thin tantalum oxide ($Ta_2O_5$) layer was fabricated by rapid thermal oxidation (RTO). In the experiment, we made three types of sensors with different palladium (Pd) patterns to evaluate the effect of Pd electrode on response characteristics. As the result, the response characteristics in capacitance were improved further when the filled area of the Pd electrode became larger.

• Journal of the Korean Magnetics Society
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• v.20 no.3
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• pp.83-88
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• 2010

We investigated the electronic structure and magnetism of the (3d, 4d)-Pd alloyed c($2{\times}2$) monolayer systems, by use of the FLAPW band method. For comparison, pure 3d- and 4d-transition metal monolayers are also considered. We found that the antiferromagnetic configuration of pure V monolayers is sustained in the V-Pd alloy system, while the Ti-Pd alloy system is changed to antiferromagnetic configuration from the ferromagnetic state in pure Ti monolayer. The 4d TM (Mo, Ru, Rh)-Pd monolayers are found to be stable in ferromagnetic configurations. The magnetic moments of Ru and Rh atoms in Ru-Pd and Rh-Pd systems are almost same with those of pure Ru and Rh monolayers, while the magnetic moment of Mo atom is increased to $2.98\;{\mu}_B$ in Mo-Pd alloyed system from the value of Mo monolayer, $0.02\;{\mu}_B$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.4
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• pp.458-463
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• 2019

Palladium (Pd) is widely used as a catalyst and noxious gas sensing materials. Especially, various researches of Pd based hydrogen gas sensor have been studied due to the noble property, Pd can be adsorbed hydrogen up to 900 times its own volume. In this study, palladium oxide (PdO) nanostructures were grown on Si substrate ($SiO_2(300nm)/Si$) for 3 to 5 hours at $230^{\circ}C{\sim}440^{\circ}C$ using thermal chemical vapor deposition system. Pd powder (source material) was vaporized at $950^{\circ}C$ and high purity Ar gas (carrier gas) was flown with the 200 sccm. The surface morphology of as-grown PdO nanostructures were characterized by field-emission scanning electron microscopy(FE-SEM). The crystallographic properties were confirmed by Raman spectroscopy. As the results, the as-grown nanostructures exhibit PdO phase. The nano-cube structures of PdO were synthesized at specific substrate temperatures and specific growth duration. Especially, PdO nano-cube structrures were uniformly grown at $370^{\circ}C$ for growth duration of 5 hours. The PdO nano-cube structures are attributed to vapor-liquid-solid process. The nano-cube structures of PdO on graphene nanosheet can be applied to fabricate of high sensitivity hydrogen gas sensor.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.218-227
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• 2003

Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InCaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Si/Ti/Pt ohmic contact, as-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$/10 sec. However, the specific contact resistivity decreased remarkably to $2\times10^{-6}\Omega\textrm{cm}^2$ by annealing at $425^{\circ}C$/10sec. In the Pd/Si/Pd/Ti/Au ohmic contact, minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved by annealing at $400^{\circ}C$/20sec. In both ohmic contacts, low contact resistivity and non-spiking planar interface between ohmic materials and InGaAs were maintained. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.9 ㎓ and 74.4 ㎓, respectively, and maximum oscillation frequencies were 50.1 ㎓ and 52.5 ㎓, respectively. It shows very successful high frequency operations.

• Journal of Sensor Science and Technology
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• v.21 no.4
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• pp.283-286
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• 2012

This paper presents the optical hydrogen sensor based on transparent 3C-SiC membrane and photovoltaic effect. Gasochromic materials of Pd and Pd/$WO_3$ were deposited by sputter on 3C-SiC membrane for gas sensing area. Gasochromic materials change to transparency by exposure to hydrogen. The variations of light intensity by hydrogen generate the photovoltaic of P-N junction between N-type 3C-SiC and P-type Si. Single layer of Pd shows higher photovoltaic compared with Pd/$WO_3$. However, phase transition from ${\alpha}$ to ${\beta}$ is shown at 6 %. Pd/$WO_3$ structure show the more linear response to hydrogen range of 2 % ~10 %. Also, almost 2 times fast response and recovery characteristics are shown at Pd/$WO_3$. These fast performances are come from the fact that Pd promoted the chemical reaction between hydrogen and $WO_3$.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.201-206
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• 2002

Pd/Si/Pd/Ti/Au ohmic contact to n-type InGaAs was investigated with rapid thermal annealing conditions. Minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved at $400^{\circ}C$/20sec. This was related to the formation of Pd-Si compounds by rapid thermal annealing and the in-diffusion of Si atoms to InGaAs surface. However, the specific contact resistivity increased slightly to low-$10^{-6}\Omega \textrm{cm}^2$ at $400^{\circ}C$ for longer than 30 seconds, and to high-$10^{-7}$ at 425~$450^{\circ}C$ for 10 seconds. This resulted from the formation of Pd-Ga compounds. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained after annealing at high temperature. Therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.