• Title/Summary/Keyword: Pb-Bi

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Chip Forming Characteristics of Bi-S Free Machining Steel (Bi-S 쾌삭강의 칩생성특성)

  • 조삼규
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.9 no.3
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    • pp.48-54
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    • 2000
  • In this study the characteristics of chip formation of the cold drawn Bi-S free machining steels were assessed. And for comparison those of the cold drawn Pb-S free machining steel the hot rolled low carbon steel which has MnS as free machining inclusions and the conventional steels were also investigated. During chip formation the cold drawn free machining steels show relatively little change in thickness and width of chip compare to those of the conventional carbon steels. And a single parameter which indicates the degree of deformation during chip formation chip cross-section area ratio is introduced. The chip cross-section area ratio is defined as chip cross-section area is divided by undeformed chip cross-section area. The variational patters of the chip cross-section area ratio of the materials cut are similar to those of the shear strain values. The shear stress however seems to be dependent on the carbon content of the materials. The cold drawn Bi-S and Pb-S steels show nearly the same chip forming behaviors and the energy consumed during chip formation is almost same. A low carbon steel without free machining aids shows poor chip breakability due to its high ductility. By introducing a small amount of free machining inclusions such as MnS Bi, Pb or merely increasing carbon content the chip breakability improves significantly.

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Chip Forming Characteristics of Bi-S Free Machining Steel (Bi-S 쾌삭강의 칩생성특성)

  • 이영문
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 1999.10a
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    • pp.351-356
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    • 1999
  • In this study, the characteristics of chip formation of the cold drawn Bi-S free machining steels were assessed. And for comparison, those of the cold drawn Pb-S free machining steel, the hot rolled low carbon steel which has MnS as free machining inclusions and the conventional steels were also investigated. During chip formation, the cold drawn free machining steels show relatively little change in thickness and width of chip compare to those of the conventional carbon steels. And a single parameter which indicates the degree of deformation during chip formation, 'chip cross-section area ratio' is introduced. The chip cross-section area. The variational patterns of cross-section area is divided by undeformed chip cross-section area. The variational patterns of the chip cross-section area ratio of the materials cut are similar to those of the shear strain values. The shear stress, however, seems to be dependent on the carbon content of the materials. The cold drawn BiS and Pb-S steels show nearly the same chip forming behaviors and the energy consumed during chip formation is almost same. A low carbon steel without free machining aids shows poor chip breakability due to its high ductility. By introducing a small amount of non-metallic inclusions such as MnS, Bi, Pb or merely increasing carbon content the chip breakability improves significantly.

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Dielectric properties of ($Sr_{0.50}Pb_{0.25}Ba_{0.25}$)$TiO_3$-$Bi_2$$Ti_3$$O_{9}$ ceramics for the high-voltage capacitor (고전압 캐패시터용 ($Sr_{0.50}/$Pb_{0.25}$/$Ba_{0.25}$)$TiO_3$-$Bi_2$$Ti_3O_{9}$ 세라믹의 유전특성)

  • 김세일;정장호;이영희;배선기
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.11a
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    • pp.17-20
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    • 1993
  • In this paper, the (1-x)($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$-x $Bi_2$$Ti_3$$O_{9}$(x=0,4,6,8[mol.%]) ceramics with paraelectric properties were, fabricated by mixed oxide method. The dielectric and structural properties of ceramics were studied with sintering temperature and addition of $Bi_2Ti_3O_{9}$, and the application for the high - voltage capacitor was investigated. In the specimens with sintering at 1350[$^{\circ}C$], sintered density was showed the highest value of 5.745[g/cm$^3$]. Increasing of sintering temperature, average grain size was increased. The specimen. ($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$sintered at 1350[$^{\circ}C$] showed good dielectric properties and breakdown voltage was showed the highest value of 200[kV]. Temperature coefficient of capacitance was stabilized in specimens added $Bi_2Ti_3O_{9}$ Sintered density. dielectric properties and breakdown voltage ware decreased with increasing the contents of $Bi_2Ti_3O_{9}$.

Phase transition of (Bi, Pb)-2223 superconductor induced by Fe3O4 addition

  • Ko, Y.J.;Oh, J.Y.;Song, C.Y.;Yang, D.S.;Tran, D.H.;Kang, B.
    • Progress in Superconductivity and Cryogenics
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    • v.21 no.4
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    • pp.1-5
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    • 2019
  • We investigated the effect of Fe3O4 addition on the critical temperature of (Bi, Pb)-2223 polycrystalline samples. Bi1.6Pb0.4Sr2Ca2Cu3O10+δ + x wt. % Fe3O4 (x = 0.0, 0.2, 0.4, 0.6, and 0.8) samples were prepared by using a solid-state reaction method. The analysis of X-ray diffraction data indicates that as Fe3O4 is added, dominant phase of the sample changes from Bi-2223 to Bi-2212 with an increasing Bi-2201 phase. The transition temperature of the samples drastically decreased with the Fe3O4 addition. The resistance data of samples with x = 0.2 and 0.4 showed a double transition indicating a coexistence of Bi-2223 and Bi-2212 phase while the samples with x = 0.6 and 0.8 showed a single transition with a semiconducting behavior. This phase transition may originate from changes in local structure of the Bi-2223 system by Fe3O4 addition. Analysis of the pair distribution function of the Cu-O pair in the CuO2 plane calculated from extended X-ray absorption fine structure data revealed that the oxygen coordination of copper ion changes from CuO4 planar type (x = 0.0 - 0.4) to CuO5 pyramidal type (x = 0.6, 0.8). The correlated Debye-Waller factor, providing information on the atomic disorder within the CuO2 plane, shows an inverse relation to the coordination number. These results indicate that addition of Fe3O4 changes the oxygen distribution around Cu in the CuO2 plane, causing a phase transition from Bi-2223 to more stable Bi-2212/Bi-2201 phases.

Interfacial Reaction Characteristics of a Bi-20Sb-10Cu-0.3Ni Pb-free Solder Alloy on Cu Pad (Bi-10Cu-20Sb-0.3Ni 고온용 무연 솔더와 Cu와의 계면 반응 특성)

  • Kim, Ju-Hyung;Hyun, Chang-Yong;Lee, Jong-Hyun
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.1
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    • pp.1-7
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    • 2010
  • Interfacial reaction characteristics of a Bi-10Cu-20Sb-0.3Ni Pb-free alloy on Cu pad was investigated by reflow soldering at $430^{\circ}C$. The thickness of interfacial reaction layers with respect to the soldering time was also measured. After the reflow soldering, it was observed that a $(Cu,Ni)_2Sb$, a $Cu_4Sb$ intermetallic layer, and a haze layer, which is consisted of Bi and $Cu_4Sb$ phases, were successively formed at the Bi-10Cu-20Sb-0.3Ni/Cu interface. The total thickness of the reaction layers was found to be linearly increased with increasing of the reflow soldering time up to 120 s. As the added Ni element did not participate in the formation of the thickest $Cu_4Sb$ interfacial layer, suppression of the interfacial growth was not observed.

Preparation and properties of PbO Free for PDP Rib Paste (PDP용 무연프리트 유리의 제조 및 특성)

  • Son, Myung-Mo;Lee, Heon-Soo;Lee, Chang-Hee;Lee, Sang-Geun;Park, Hee-Chan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.524-525
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    • 2005
  • The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system $ZnO-B_2O_3-Bi_2O_3-SiO_2$, DTA, and XRD were used to characterize $ZnO-B_2O_3-Bi_2O_3-SiO$ glasses. In this present study, PbO free paste had thermal expansion of $74\times10^{-7}/^{\circ}C$, DTA transformation point of $470^{\circ}C$, and firing condition of $540^{\circ}C$, 20min.

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Electromagnetic Properties of BiPbSrCaCuO Superconductor (BiPbSrCaCuO 초전도체의 전자기특성)

  • Lee, Sang-Heon;Nam, Sugn-Pill;Lee, Sung-Gap;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1549-1551
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    • 2004
  • The Electromagnetic properties in BiPbSrCaCuO superconductor was studied. In the measurement of current-voltage characteristics, a voltage across the superconducting sample was observed on applying an external magnetic field. The voltage continues to appear the removal of the magnetic field. The appearance of the voltage is ascribed to the trapping of magnetic flux. Depanding on the direction of applied magnetic flux less than 2.5${\times}$10-5 T, the voltage in the magnetized sample increases or decreases. It is considered that mechanism of voltage occurrence can be explained by applying filament model.

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Magnetic Suspension Effect of BiPbSrCaCuO Superconductor (Bi계 초전도제의 자기부양효과)

  • 이상헌
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.6
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    • pp.535-538
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    • 2002
  • Suspension effect has been studied by using superconductor of BiPbSrCaCuO ceramics containing $Ag_2()$. It has been clear that $Ag_2()$ acts as pinning center which plays an important role to the suspension effect. Magnetic repulsive force which affects a superconductor located in magnetic flux from toroidal magnet, has been investigated. It has been concluded that the suspension effect arises from the interaction between the pinning effect and the diamagnetic effect.

Effects of Powder Sintering and 2nd, Pressing in (Bi,Pb)SrCaCuO System ((Bi,Pb)SrCaCuO System에서 분말 소결 및 2차 성형의 영향)

  • Cho, Han-Dae;Jang, Kyung-Uk;Park, Yong-Pil;Lee, Kyung-Sub;Lee, Joon-Ung
    • Proceedings of the KIEE Conference
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    • 1992.07b
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    • pp.740-743
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    • 1992
  • Effects of powder sintering and 2nd, pressing on the superconducting characteristics in the (Bi,Pb)SrCaCuO system have been studied. The sample prepared by the powder sintering process had a porous microstructure with a $T_c$ below 77 K, while the sample prepared by 2nd. pressing process had highly oriented microstructure with a $T_c$ above 100 K. The critical current density($J_c$) was relatively improved in the sample prepared by the 2nd. pressing process. But the value of $J_c$ is cosiderably low in practical use.

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Properties of Pb-doped Bi-Sr-Ca-Cu-O Superconductors (Pb가 첨가된 Bi-Sr-Ca-Cu-O 초전도체의 특성)

  • Park, Y.P.;Shin, C.G.;Hwang, G.Y.;Hong, J.W.;Lee, J.U.
    • Proceedings of the KIEE Conference
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    • 1989.11a
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    • pp.119-121
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    • 1989
  • The properties of Pb-doped Bi-Sr-Ca-Cu-O Super-conductors prepared by solidstate reaction have been studied. Zero resistance was attained at l03K for the sample sintered 845[$^{\circ}C$]for 264hours and it was depended upon sintering conditions. From XRD data low Tc phase and high Tc phase were observed and the volume fraction of high Tc phase increased with increase in sintering period. The grain size increased with increase in sintering temperature and time.

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