• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.191-194
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• 2004

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) 박막을 $Pt(111)/Ti/SiO_2/Si$ 기판위에 증착되었고, 수소 후열처리 후의 특성변화를 연구하였다. 동시에 10 nm의 $(Pb_{0.72}La_{0.28})Ti_{0.94}O_3$ (PLT) buffer를 사용한 PZT 박막의 수소 후열처리 효과를 관찰하였다. PZT 박막의 경우, 수소 후열처리 전과 후에 강유전 특성이 현저하게 감소한 반면, PLT buffer가 사용된 PZT 박막의 경우, 강유전 특성에 거의 변화가 없었다. 이는 PLT buffer를 사용함으로써 PZT 박막의 배향성이 향상되고, 이에 따라 forming gas에 의한 수소원자가 박막 내로의 침투가 어렵게 된다. 따라서 수소원자에 대한 PZT 박막의 열화되는 현상이 buffer를 사용하는 경우, 거의 나타나지 않게 된다.

• 한국결정성장학회지
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• 제2권2호
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• pp.71-76
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• 1992

$0.05Pb(Al_{2/3}W_{1/3})O_3-0.95Pb(Zr_{0.52}Ti0.48)O_3$를 기본 조성으로 $MnO_2,Fe_2O_3$를 첨가제로 하여 사진식각법(Photolithography)을 이용 세라믹 필터를 제작하였다. $MnO_2$의 첨가량이 증가함에 따라 전기 기계 결합 계수(Kp)가 낮아지며, $Fe_2O_3$의 경우 Kp값은 57% 정도로 우수하나 기계적 품질 계수(Qm)는 $MnO_2$첨가의 경우에 비해 상대적으로 낮은 값을 보여주고 있다. $MnO_2$0.3wt% 첨가의 경우 3dB 대역폭은 155kHz, $ Fe_2O_3$0.1wt%인 경우 260kHz로써 Qmr값이 크기에 반비례하였으며, 군지연시간 특성은 $MnO_2$의 경우 Gaussian 특성을,$Fe_2O_3$의 경우 Butterworth 특성을 나타내었다.

• E2M - 전기 전자와 첨단 소재
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• 제5권2호
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• pp.207-215
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• 1992

본 연구에서 xPb(A $l_{0.5}$N $b_{0.5}$) $O_{3}$-(1-x)Pb(Z $r_{0.52}$ $Ti_{o.48}$) $O_{3}$계의 조성변화에 따른 유전 및 압전특성에 관해 실험한 결과 다음과 같은 결론을 얻었다. PAN의 첨가량이 증가함에 따라 c축은 수축되고 a축은 팽창하여 tetragonality는 감소하였고 grain의 크기와 Curie온도 또한 PAN의 첨가량에 따라 감소하였으나 밀도와 유전상수는 PAN의 양이 5mol%까지 증가하다가 그 이상에서는 감소하는 경향을 보였다. PAN의 첨가량이 증가함에 따라 시편의 비저항은 증가하였고 Kp는 PAN의 양이 5mol%첨가시 60%로 최대치를 보였으나 Qm은 최소치를 나타내었다.다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
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• pp.69-69
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• 2001

• 한국세라믹학회지
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• 제36권10호
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• pp.1108-1114
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• 1999

Microstructure and electrical properties of ZnO-doped (0-5 mol%) 0.05 Pb(Mn1/3Sb2/3)O3-0.95 PZT ceramics were investigated. Sintering temperature was decreased to 100$0^{\circ}C$ due to eutetic reaction between PbO and ZnO. Grain-size increased up to adding 1mol% ZnO and then decreased. Compositions of grain and grain-boundary were investigated by WDS. Lattice parameter was decreased with ZnO addition. Density increased with ZnO addition and reached to the maximum of 7.84(g/cm2) at 2 mol% ZnO. The effect of ZnO on electrical properties of PMS-PZT was investigated. At 3mol% ZnO addition electromechanical coupling factor(kp) was about 50% and relative dielectric constant($\varepsilon$33/$\varepsilon$0) was 997 Mechanical quality factor(Qm) decreased with ZnO addition. Lattice parameters and tetragonality(c/a) were measured to investigate relationship between the electric properties and substitution of Zn2+. At 3 mol% ZnO tetragonality was maximiged at c/a=1.0035 Curie temperature (Tc) decreased slightly with ZnO addition.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.106-106
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• 2002

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.335-337
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• 1995

In this study, $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ stock solution was made and spin-coated on the $Pt/SiO_2/Si$ substrate at 4000[rpm] for 30[sec]. Coated specimens were dried at 400[$^{\circ}C$] for 10 [min]. The coating process was repeated 4 times and then heat-treated at 500$\sim$800[$^{\circ}C$], 1 hour. The final thickness of the thin films were about 3000[A]. The crystallinity and microstructure of the thin films were investigated for varing the sintering condition. The ferroelectric perovskite' phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hours. In the $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films sintered at 700[$^{\circ}C$] for 1 hour, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitors having good dielectric and electrical properties are expected for the application to the dielectric material of DRAM.

• 한국세라믹학회지
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• 제28권12호
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• pp.953-960
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• 1991

Effect of MgO doping was studied by measuring complex impedance of PZT[Pb(Zr0.52Ti0.48)O3] samples doped with 0.25~6 mol% MgO. Electrical conductivity of PZT samples increased within 1.5 mol% of MgO doping. However above 1.5 mol%, no noticeable changes were found. Activation energy and pre-exponential factor of electrical conductivity were found to decrease within 1.5 mol% of MgO doping, but increase above 1.5 mol%. Therefore it was concluded that the decrease of electrical conductivity with MgO doping was due to the decrease of activation energy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.11-12
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• 2005

[ $Pb(Zr_{0.48}Ti_{0.52})O_3$ ] (PZT) thin films were deposited on Pt(111)/Ti/$SiO_2$/Si substrates by pulsed laser deposition. In order to study the effect of different laser pulse repetition rate on the dielectric and ferroelectric properties of PZT thin films,2 Hz and 5 Hz of laser pulse repetition rate were selected. We compared the results of XRD pattern, dielectric constant and hysteresis characteristics. From the experimental data, we found that the electrical properties of PZT thin films which grown ar 2 Hz of laser pulse repetition rate were better than those which grown at 5 Hz of laser pulse repetition rate.

• 한국세라믹학회지
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• 제24권4호
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• pp.397-403
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• 1987

Pb(Zr0.52Ti0.48)O3 powders were prepared by hydrothermal synthesis. Using soluble salts such as Pb(NO3)2, TiCl4 and ZrOCl2$.$8H2O and oxide such as PbO and TiO2 as starting materials, PZT powder was hydrothermally synthesized at the temperature range between 150$^{\circ}C$ and 200$^{\circ}C$. The result showed that reactivity by alkali was decreased in the sequence of Pb(NO3)2, TiCl4, ZrOCl2, PbO, TiO2 and ZrO2. Using the first three soluble salts, PZT powder was synthesiged at 150$^{\circ}C$ for 1hr. In PbO-TiCl4-ZrOCl2 system, PZT powder was synthesized at 150$^{\circ}C$ for 8rs. In Pb(NO3)2-TiO2-ZrOCl2 system, PZT powder was synthesized at 150$^{\circ}C$ for 16hrs, in PbO-TiO2-ZrOCl2 system, the powder was synthesized at 200$^{\circ}C$ for 8hrs.