• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.60-63
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• 1997

Dieletric ailed piezoelectric properties of Pb[$Zr_{0.45}$/ $Ti_{0.5-x}$/L $u_{x}$ (M $n_{1}$3//S $b_{2}$3)$_{0.05}$] $O_3$(0$\leq$x $\leq$0.03) were investigated. The partial substitution of $Ti^{4+}$ by a L $u^{3+}$ permitted improvement of the piezoelectric constant( $d_{33}$ ), electromechanical coupling factor ( $k_{p}$ ) and dielectric constant($\varepsilon$$_{33}$ /Sup T/). The dielectric loss(tan $\delta$ ) increased and mechanical quality factor(Qm) decreased with an increase of x were observed. A new piezoelectric material for actuator application was developed at x=0.02 with $d_{33}$ =370$\times$10$^{-2}$ /C/N, $k_{p}$ =58.5%, $\varepsilon$$_{33}$ $^{T}$ =1321, $Q_{m}$ =714 and tan $\delta$ =0.98%.%..%.%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.217-221
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• 1997

We have investigated the ferroelectric properties of multi-layered SrBi$_2$Ta$_2$$O_{9}$Pb(Zr,Ti)O$_3$, SBT/PZT, thin film capacitors. Specimens were prepared onto Pt-coated Si wafer by sol-gel method. Ferroelectric properties of these finns could be obtained only for thin SBT layers below 50nm in thickness. The values of dielectric constant and remnant polarization depend mainly on the thickness of SBT layer, which arises from the paraelectric interface layer between SBT and PZT due to the thermal diffusion of Pb. The value of remnant poarization of PZT/SBT is greater than that of SBT, and the plarization fatigue behaviors of PZT/SBT/Pt capacitors are somewhat improved as compared with those of PZT/Pt.t.

• 한국전기전자재료학회논문지
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• 제11권5호
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• pp.394-399
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• 1998

High power characteristics with vibration velocity were studied in $Pb(Y_{2/3}W_{1/3})O_3-Pb(Zr,Ti)O_3$(PYW-PZT) ceramics by using the constant current method. Young s modulus $Y_0^E$ and mechanical quality factor $Q_m$ are a function of the square of effective vibration velocity \upsilon_0$. The nonlinear proportional constants of the above functions indicate the degree of stability under the vibration level change. The stability of PYW-PZT ceramics estimated by these constants coincides with the results obtained through the heat generation. It was found that $Q_m$ was markedly decreased with increasing the vibration velocity, accompanying a lot of heat generation. The vibration hysteresis and dielectric loss according to the vibration velocity was reduced by doping $Fe_2O_3$to the ceramics. On the contrary, these losses was increased by doping $Nb_2O_5$.

• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.606-610
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• 1995

In this study, Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ stock solution was made and spin-coated on the Pt/ $SiO_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were chied at 400[.deg. C] for 10[min]. The coating process was repeated 6 times and then heat-treated at 500-800[.deg. C] and 1 hour. The final thickness of the thin films were about 4800[.angs.]. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hour. Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films sintered at 700[.deg. C] for 1 hour showed good dielectric and ferroelectric properties.

• 한국결정성장학회지
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• 제1권1호
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• pp.107-116
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• 1991

초음파 진동자를 사용 분무 열분해시켜 $Pb(NO_3)_2$와 $TiO(NO_3)_2$ 용액으로부터 $PbTiO_3$ 미분말을 합성하고 미립자의 특성을 조사하였다. 또한 미립자 형성과정을 같은 방법으로 합성되어 문헌에 보고된 $BaTiO_3$, $ZrO_2$, ZnO 등의 미립자 형성과정과 비교 검토하였다.

• 한국세라믹학회지
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• 제28권5호
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• pp.347-352
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• 1991

The effects of Ta2O3 doping on the microstructure, electrical properties and thermal expansion in Pb(Zr0.525Ti0.475)O3 ceramics were studied. Density, average grain size, electromechanical coupling factor kp and thermal expansion coefficient of unpoled and poled samples were measured as a function of Ta2O5 content. Average grain size was decreased and density increased above 0.6 mol% Ta2O5 addition. In case of 0.2 mol% addition, density showed minimum according to grain growth. Dielectric constant and electromechanical coupling factor kp were the lowest in 0.2 mol% addition increased with Ta2O5 addition.

• 한국광물학회지
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• 제30권3호
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• pp.127-136
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• 2017

자외선 차단기능과 제균 기능을 갖는 합성 $TiO_2$-복합체에 대해 압력의 영향을 체크하기 위해 고압실험을 시행하였다. 복합체 분말시료는 아나타제와 루틸 및 염화은으로 구성되어 있으며, 입자크기는 34 nm 정도로 결정되었다. 아나타제와 루틸 모두 약 14~16 GPa 구간에서 $ZrO_2$ (배델레이트)-형태의 결정구조로 상변이하며, 본 실험의 최고압력인 22.7 GPa까지 상변이는 계속된다. 압력을 모두 제거하여 상압 상태가 되면, 루틸은 ${\alpha}-PbO_2$ 구조로 상변이하며 아나타제는 고압의 $ZrO_2$-결정구조가 유지되는 것으로 판단된다. 염화은의 회절피크는 낮은 압력에서 사라지는 것이 관찰되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.67-69
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• 2004

The $Pb(Zr,Ti)O_3$ thin films were fabricated with $Pb(La,Ti)O_3$ buffers in-situ onto $Pt/Ti/SiO_2/Si$ substrates by pulsed laser deposition technique using a Nd:YAG laser with energy density of $2.5J/cm^2$, and deposited for 10 minutes at $550^{\circ}C$ of substrate temperature. And then, the films have been annealed at $550^{\circ}C$ in oxygen ambient pressure. The remanent polarization value is increased by using buffer layers but coercive field of films is slightly increased.

• 한국세라믹학회지
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• 제28권12호
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• pp.953-960
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• 1991

Effect of MgO doping was studied by measuring complex impedance of PZT[Pb(Zr0.52Ti0.48)O3] samples doped with 0.25~6 mol% MgO. Electrical conductivity of PZT samples increased within 1.5 mol% of MgO doping. However above 1.5 mol%, no noticeable changes were found. Activation energy and pre-exponential factor of electrical conductivity were found to decrease within 1.5 mol% of MgO doping, but increase above 1.5 mol%. Therefore it was concluded that the decrease of electrical conductivity with MgO doping was due to the decrease of activation energy.

• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.836-850
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• 1996

In this study, we have analyzed structural analysis and measured ferroelectric characteristics of PZT thin films prepared by sol gel process with different sintering conditions and different Zr/Ti mot%. When the Zr mot% of PZT thin film was increased, it was found that the remanent. polarization and coercive field were decreased and increased, respectively. Also, the maxium dielectric constant of PZT(50/50) thin film was 786.8. We got double hysteresis(anti-fcrroelectric) curve from PbZrO$_{3}$ thin film. As heating rate goes up, pyrochlore phase of PZT thin film was decreased and dielectric and ferroelectric characteristics were improved. As a result of variation of sintering temperature and time 500.deg. C-800.deg. C and 5 sec.-8 hours, respectively, we got optimal sintering temperature and time. The optimium sintering temperature and time of conventional furnace method and rapid thermal processing method were 650.deg. C-700.deg. C for 30-60 minutes and 700.deg. C/20 seconds-2 minutes, respectively.